Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition

The epitaxial growth of AlxGa1-xN film with high Al content by metalorganic chemical vapor deposition (MOCVD) has been accomplished. The resulting Al content was determined to be 54% by high resolution X-ray diffraction (HRXRD) and Vegard's law. The full width at half maximum (FWHM) of the AlGaN (0002) HRXRD rocking curve was about 597 arcsec. Atomic force microscopy (AFM) image showed a relatively rough surface with grain-like islands, mainly coming from the low surface mobility of adsorbed Alspecies. From transmittance measurement, the cut-off wavelength was around 280 nm and Fabry-Perot fringes were clearly visible in the transmission region. Cathodoluminescence (CL) measurement indicated that there existed a uniformity in the growth direction and a non-uniformity in the lateral direction. (C) 2007 Elsevier Ltd. All rights reserved.

Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth

The crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth (ELO) on sapphire (0001) substrates was investigated by using double crystal X-ray diffraction (DC-XRD). It was found that ELO GaN stripes bent towards the SiNx mask in the direction perpendicular to seeding lines. Each side of GaN (0002) peak in DC-XRD rocking curves was a broad peak related with the crystallographic tilt. This broad peak split into two peaks (denoted as A and B), and peak B disappeared gradually when the mask began to be removed by selective etching. Only narrow peak A remained when the SiNx mask was removed completely. A model based on these results has been developed to show that there are two factors responsible for the crystallographic tilt: One is the non-uniformity elastic deformation caused by the interphase force between the ELO GaN layer and the SiNx mask. The other is the plastic deformation, which is attributed to the change of the threading dislocations (TDs)-from vertical in the window regions to the lateral in the regions over the mask.

The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method

Multi-sheet InGaN/GaN quantum dots (QDs) were grown successfully by surface passivation processing and low-temperature growth in metalorganic chemical vapor deposition. This method based on the principle of increasing the energy barrier of adatom hopping by surface passivation and low-temperature growth, is quite different from present methods. The InGaN quantum dots in the first layer of about 40-nm-wide and 15-nm-high grown by this method were revealed by atomic force microscopy. The InGaN QDs in upper layer grew bigger. To our knowledge, the current-voltage characteristics of multi-sheet InGaN/GaN QDs were measured for the fist time. Two kinds of resonance-tunneling-current features were observed which were attributed to the low-dimensional localization effect. Some current peaks only appeared in positive voltage for sample due to the non-uniformity of the QDs in the structure. (C) 2002 Elsevier Science B.V. All rights reserved.

Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching

The crystallographic tilt of the lateral epitaxial overgrown (LEO) GaN on sapphire Substrate with SiNx mask is investiaated by double crystal X-ray diffraction. Two wing peaks beside the GaN 0002 peak can be observed for the as-grown LEO GaN. During the selective etching of SiNx mask, each wing peak splits into two peaks, one of which disappears as the mask is removed, while the other remains unchanged. This indicates that the crystallographic tilt of the overgrown region is caused not only by the plastic deformation resulted from the bending of threading dislocations, but by the non-uniformity elastic deformation related with the GaN, SiNx interfacial forces. The widths of these two peaks are also studied in this paper. (C) 2002 Elsevier Science B.V. All rights reserved.

Chaotic behavior of pulsating heat pipes

Chaotic behavior of closed loop pulsating heat pipes (PHPs) was studied. The PHPs were fabricated by capillary tubes with outer and inner diameters of 2.0 and 1.20 mm. FC-72 and deionized water were used as the working fluids. Experiments cover the following data ranges: number of turns of 4, 6, and 9, inclination angles from 5 degrees (near horizontal) to 90, (vertical), charge ratios from 50% to 80%, heating powers from 7.5 to 60.0 W. The nonlinear analysis is based on the recorded time series of temperatures on the evaporation, adiabatic, and condensation sections. The present study confirms that PHPs are deterministic chaotic systems. Autocorrelation functions (ACF) are decreased versus time, indicating prediction ability of the system is finite. Three typical attractor patterns are identified. Hurst exponents are very high, i.e., from 0.85 to 0.95, indicating very strong persistent properties of PHPs. Curves of correlation integral versus radius of hypersphere indicate two linear sections for water PHPs, corresponding to both high frequency, low amplitude, and low frequency, large amplitude oscillations. At small inclination angles near horizontal, correlation dimensions are not uniform at different turns of PHPs. The non-uniformity of correlation dimensions is significantly improved with increases in inclination angles. Effect of inclination angles on the chaotic parameters is complex for FC-72 PHPs, but it is certain that correlation dimensions and Kolmogorov entropies are increased with increases in inclination angles. The optimal charge ratios are about 60-70%, at which correlation dimensions and Kolmogorov entropies are high. The higher the heating power, the larger the correlation dimensions and Kolmogorov entropies are. For most runs, large correlation dimensions and Kolmogorov entropies correspond to small thermal resistances, i.e., better thermal performance, except for FC-72 PHPs at small inclination angles of theta < 15 degrees.

黄土高原降雨空间分布的不均匀性研究

根据黄土高原13条流域的降雨资料，分三种雨型即局地强对流条件引起的小范围、短历时、高强度的局地性暴雨（A型暴雨），峰面型降雨夹有局地雷暴性质的较大范围、中历时、中强度暴雨（B型暴雨），峰面型降雨引起的大面积、长历时、低强度暴雨（C型暴雨）；选用流域面雨量离差系数Cv、流域降雨不均匀系数η和流域最大点与最小点降雨量比值系数α三种指标，分析了次降雨空间分布的不均匀性。

基于LBL声信标的AUV快速精确定位

长基线声学定位系统是水下机器人广泛应用的外部导航设备。以对"CR-02"6000m自治水下机器人(简称AUV)技术的深入开发为背景,提出在原有长基线(LBL)定位系统的基础上增加导航功能的方案。由于海水介质非均匀性与复杂的时空变化特性,给基于测距的位置计算带来很大困难。采用平均声速法计算耗时小而误差大,波阵面定位法误差小而耗时大。为解决这个矛盾,根据AUV深度传感器给出的深度信息,采用本征声线快速计算方法解算AUV的水平面位置。与波阵面法、平均声速法进行了综合比较。仿真实验表明该方法具有优良的性能,满足AUV导航需要。

电离层胶片频高图数字化转换与分析研究

The ionogram acquired with the ionospheric vertical sounding method is the oldest data in the history of ionospheric research. Using of modern microelectronics and computer technology to digitalize, analyse and preserve the huge amount of historical film ionogram has become more and more important and urgent. This paper introduced the progress of the film ionogram digitalization by using digital image processing technologies to correct and repair film ionogram and convert them in an exchangeable format. An analysis and conversion software, basing on this method, has been developed for the film ionogram analysis, and then it introduces the application of this software by combining the SAO Explorer program for Wuhan film ionogram and pseudo-color ionogram in Yamagawa in Japan. It shows that our method is reliable，and the developed software is used friendly and provides a positive solution in digitalization and analysis of huge amount of historical film ionogram. Firstly, we briefly introduce the film ionogram and the process of its digitalization. By observing a amount of film ionogram, we obtain some common characteristics of the digitalized film ionogram following as: (1) the image rotation are caused by scanning; (2) the vertical axis of a large number of film ionogram exist more or less tilt and bending ; (3) coordinates of the film ionogram appear the non-uniformity phenomena result from the instability of driving motor rotation and the error of altitudinal cursor orientation. Moreover, based on the characteristics of the film ionogram and the SAO Explorer software which is widely used for the digital ionogram analysis in the world, a new method has been developed for film ionogram procession. The method contains the image geometric correction and film ionogram format conversion. The image geometric correction includes such as image rotation correction, vertical correction and coordinates scale correction. After geometric correction, the BMP file format images will be converted to the SBF file format images. Then, we also discuss the data format converting methods, which include two methods of the image data mapping basing on the normalization and logarithm, and the method of the preprocessing of the noise filtering and the threshold setting. Combining with SAO Explorer software, we successfully obtain ionospheric parameters and electron profile from the converted SBF file format digital ionograms. Based on the above method, we developed the software for the film ionogram to realize its correction analysis and conversion of the image format, and then give a introduction for its function and operation. Subsequently, the software are applied into the Wuhan film ionogram which separately observed in the high solar activity year and the low in 1980s last century. The results reveal the converted SBF digital ionogram almost preserve the all echo information of the film ionogram. Furthermore, we expressly discuss the application to the Wuhan film ionogram in 1958 in order to validate the applicability and credibility of the software. And it is showed that the important information of the film ionogram are maintained into the SBF digital ionogram. It is represented that there is credibility for conversion of the software when it applied in the older film ionogram. In sum, this software could apply to the digitalization and analysis of huge amount of historical film ionogram. Last, we extended the function of the software by bring some new conversion method and used it to apply to the pseudo-color ionogram of yamagawa in Japan. The results show that the converted ionogram information basically maintain the importantly ionogram information and the error of scaling of converted SBF file format image is almost acceptable, though there is no preprocessing for the original ionogram. Hence, we could extend the applicable range of the software and apply it to all kinds of simulative ionogram imaging by improving the method and software.

油气流线模拟方法研究与系统研制

The modeling of petroleum flow path (petroleum charging) and the detail of corresponding software development are presented in this paper, containing principle of petroleum charging, quantitative method, and practical modeling in two oil fields. The Modeling of Petroleum Flow Path is based on the result of basin modeling, according to the principle of petroleum migrating along the shortest path from the source to trap, Petroleum System Dynamics (Prof. Wu Chonglong, 1998), the concept of Petroleum Migration and Dynamic Accumulation (Zhou Donyan, Li Honhui, 2002), etc. The simulation is done combing with all parameters of basin, and considering the flow potential, non-uniformity of source and porous layer. It's the extending of basin modeling, but not belong to it. It is a powerful simulating tool of petroleum system, and can express quantitatively every kind of geology elements of a petroleum basin, and can recuperate dynamically the geology processes with 3D graphics. At result, we can give a result that the petroleum flow shows itself the phenomena of main path, and without using the special theory such as deflection flow in fractures(Tian Kaiming, 1989, 1994, Zhang Fawang, Hou Xingwei, 1998), and flow potential(England, 1987). The contour map of petroleum flow quantitative show clearly where the coteau - dividing slot is, and which convergence region are the main flow path of petroleum, and where is the favorable play of petroleum. The farsighted trap can be determined if there are enough information about structural diagram and can be evaluated, such as the entrapment extent, spill point, area, oil column thickness, etc. Making full use of the result of basin modeling with this new tool, the critical moment and scheme of the petroleum generation and expulsion can be showed clearly. It's powerful analysis tool for geologist.

Pre-irradiation with low-dose C-12(6+) beam significantly enhances the efficacy of AdCMV-p53 gene therapy in human non-small lung cancer

The combination of ionizing radiation and gene therapy has been investigated. However, there are very few reports about the combination of heavy-ion irradiation and gene therapy. To determine if the pre-exposure to low-dose heavy ion beam enhances the suppression of AdCMV-p53 on non-small lung cancer (NSLC), the cells pre-irradiated or non-irradiated were infected with 20, 40 MOI of AdCMV-p53. Survival fraction and the relative biology effect (RBE) were determined by clonogenic assay. The results showed that the proportions of p53 positive cells in C-12(6+) beam induced AdCMV-p53 infected cells were more than 90%, which were significantly more than those in gamma-ray induced AdCMV-p53 infected cells. The pre-exposure to low-dose 12C6+ beam significantly prevented the G(0)/G(1) arrest and activated G(2)/M checkpoints. The pre-exposure to C-12(6+) beam significantly improved cell to apoptosis. RBEs for the C-12(6+)+ AdCMV-p53 infection groups were 30%-60%,20% -130% and 30%-70% more than those for the C-12(6+)_irradiated only, AdCMV-p53 infected only, and gamma-irradiation induced AdCMVp53 infected groups, respectively. The data suggested that the pre-exposure to low-dose C-12(6+) beam significantly promotes exogenous p53 expression in NSLC, and the suppression of AdCMV-p53 gene therapy on NSLC.

Two-dimensional performance of uniform irradiation with the use of an edge-softened lens array and spectral dispersion

A lens array composed of edge-softened elements is used to improve on-target irradiation uniformity in the Shenguang II Laser Facility, with which a Fresnel pattern of suppressed diffraction peaks is obtained. Additional uniformity can be reached by reducing short-wavelength interference speckles inside the pattern when the technique of smoothing by spectral dispersion is also used. Two-dimensional performance of irradiation is simulated and the results indicate that a pattern of steeper edges and a flat top can be achieved with this joint technique. (c) 2007 Optical Society of America.

Valence state change and refractive index change induced by femtosecond laser irradiation in Sm3+ doped fluoroaluminate glass

We report femtosecond laser induced valence state and refractive index change in transparent Sin(3+)-doped fluoroaluminate glass. The effect of annealing on the induced changes was studied and the thermal stability of these changes was discussed. The results show that the femtosecond laser induced valence state change is more stable than the induced refractive index change. The observed phenomenon could be applied to design the thermally erasable or stable storage medium. (c) 2007 Elsevier B.V. All rights reserved.

Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence

Undoped GaSb was irradiated by 2.6 MeV protons. The irradiation-induced defects were studied by positron lifetime spectroscopy (PLS) and photoluminescence (PL). Positron lifetime measurements showed that vacancy-type defects were introduced after irradiation, and divacancies were formed at higher irradiation dose. Annealing experiments revealed there were different annealing steps between the as grown and proton-irradiated samples, the reason for which was tentatively attributed to the formation of divacancies in the proton-irradiated samples during annealing. All the vacancy defects could be annealed out at around 500 degrees C. The PL intensity quickly fell down after proton irradiation and decreased with increasing irradiation dose, indicating that irradiation induced non-irradiative recombination centers, whose candidates were assigned to the vacancy defects induced by proton irradiation.

Effect of beta-irradiation on photoluminescence of MOCVD grown GaN

The effect of beta particles interaction on the optical properties of MOCVD grown GaN is reported. A significant change in luminescence properties of GaN is observed after exposing the material with 0.6 MeV beta particles with low dose of 10(12) cm(-2). The results obtained from photoluminescence measurements of irradiated GaN samples in low dose are found contradictory to those reported in literature for samples irradiated with heavy dose (> 10(15) cm(-2)) of electron. An increase in intensity of yellow luminescence has been observed with increasing dose of beta particles which is in disagreement to the already reported results in literature for heavily irradiated samples. A model has been proposed to sort out this inconsistency. The increase in YL intensity at low dose is attributed to the increase in concentration of VGaON complex whereas production of non-radiative VGaON clusters is assumed to justify the decrease in YL intensity at high dose.