Gap states and microstructure of microcrystalline silicon thin films

The density of states (DOS) above Fermi level of hydrogenated microcrystalline silicon (mu c-Si H) films is correlated to the material microstructure. We use Raman scattering and infrared absorption spectra to characterize the structure of the films made with different hydrogen dilution ratios. The DOS of the films is examined by modulated photocurrent measurement. The results have been accounted for in the framework of a three-phase model comprised of amorphous and crystalline components, with the grain boundary as the third phase. We observed that the DOS increases monotonically as the grain boundary volume fractions f(gb) is increased, which indicates a positive correlation between the DOS and the grain boundary volume fraction.

Deposition of p-type nc-SiC : H thin films with subtle carbon incorporation for applications in p-i-n solar cells

This paper presents a detailed study on the effects of carbon incorporation and substrate temperature on structural, optical, and electrical properties of p-type nanocrystalline amorphous silicon films. A p-nc-SiC: H thin film with optical gap of 1.92 eV and activation energy of 0.06 eV is obtained through optimizing the plasma parameters. By using this p-type window layer, single junction diphasic nc-SiC : H/a-Si : H solar cells have been successfully prepared with a V-oc of 0.94 eV.

Photoluminescence enhancement of porous silicon by organic cyano compounds

A pronounced photoluminescence enhancement on chemically oxidized porous silicon was induced by a series of organic cyano compounds including 1,2-dicyanoethylene (CE), 1,3-dicyanobenzene (1,3-CB), 1,4-dicyanobenzene (1,4-CB), 1-cyanonaphthalene (1-CN), and 9-cyanoanthracene (9-CA). Photoluminescence enhancement effects were reversible for all compounds studies in this work. A dependence of photoluminescence enhancement on the steric effect and the electronic characteristics of these compounds and the structure of the porous silicon substrates were analyzed in terms of the photoluminescence enhancing factors. Surface chemical composition examined by Fourier transform infrared (FTIR) spectra demonstrated that the surface Si-H bonds were not changed and no new luminescent compounds were formed on porous silicon surface during adsorption of cyano compounds. A mechanism based on induced surface states acting as radiative recombination centers by cyano compounds adsorption was suggested.

LIQUID-PHASE EPITAXY GROWTH AND PROPERTIES OF GAINASSB/ALGAASSB/GASB HETEROSTRUCTURES

The GaInAsSb/AlGaAsSb/GaSb heterostructures were grown by the liquid phase epitaxy (LPE) technique. The materials were characterized by means of optical microscopy, electroprobe microanalysis (EPMA), double-crystal X-ray diffraction, capacitance-voltage (C-V) and Van der Pauw measurments, infrared absorption spectra, photoluminescence and laser Raman scattering. The results show that the materials have fine surface morphology, low lattice mismatch and good homogeneity. Room-temperature light-emitting diodes with an emission wavelength of 2.2-mu-m were obtained by using the GaInAsSb/AlGaAsSb DH structures.

Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP

The free electron concentration of as-grown liquid encapsulated Czochralski (LEC) InP measured by Hall effect is much higher than the concentration of net donor impurity determined by glow discharge mass spectroscopy. Evidence of the existence of a native donor hydrogen-indium vacancy complex in LEC undoped and Fe-doped InP materials can be observed with infrared absorption spectra. The concentration increase of the donor complex correlates with the increase of ionized deep acceptor iron impurity Fe~(2+) concentration in Fe-doped semi-insulating (SI) InP. These results indicate that the hydrogen-indium vacancy complex is an important donor defect in as-grown LEC InP, and that it has significant influence on the compensation in Fe-doped SI InP.

Photoluminescence character of Xe ion irradiated sapphire

In the present work the photoluminescence (PL) character of sapphire implanted with 180 keV Xe and irradiated with 308 MeV Xe ions was studied. The virgin, implanted and irradiated samples were investigated by PL and Fourier transform infrared (FTIR) spectra measurements. The obtained PL spectra showed the maximum emission bands at 2.75, 3.0 and 3.26 eV for the implanted fluence of 1.0 x 10(15) ions/cm(2) and at 2.4 and 3.47 eV for the irradiated fluence of 1.0 x 10(13) ions/cm(2). The FTIR spectra showed a broaden absorption band between 460 and 630 cm(-1), indicating that strong damaged region formed in Al2O3.

Effects of helium and oxygen common implantation in silicon wafer

Defect engineering for SiO2] precipitation is investigated using He-ion implantation as the first stage of separation by implanted oxygen (STMOX). Cavities are created in Si by implantation with helium ions. After thermal annealing at different temperatures, the sample is implanted with 120keV 8.0 x 10(16) cm(-2) O ions. The O ion energy is chosen such that the peak of the concentration distribution is centred at the cavity band. For comparison, another sample is implanted with O ions alone. Cross-sectional transmission electron microscopy (XTEM), Fourier transform infrared absorbance spectrometry (FTIR) and atomic force microscopy (AFM) measurements are used to investigate the samples. The results show that a narrow nano-cavity layer is found to be excellent nucleation sites that effectively assisted SiO2 formation and released crystal lattice strain associated with silicon oxidation.

Direct Electrochemistry and Electrocatalysis of Hemoglobin in Lipid Film Incorporated with Room-Temperature Ionic Liquid

A facile phospholipid/room-temperature ionic liquid (RTIL) composite material based on dimyristoylphosphatidylcholine (DMPC) and 1-butyl-3-methylimidazolium hexafluorophosphate ([bmim]PF6) was exploited as a new matrix for immobilizing protein. Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) were adopted to characterize this composite film. Hemoglobin (Hb) was chosen as a model protein to investigate the composite system. UV-vis absorbance spectra showed that Hb still maintained its heme crevice integrity in this composite film.

Preparation and luminescence properties of terbium-Sal complex in-situ synthesized in silica matrix by a two-step sol-gel process

In-situ synthesis of terbium complex with salicylic acid (Sal) in silica matrix was made by a two-step sol-gel process. The terbium complex with salicylic acid was formed in sol-gel derived silica gel, and confirmed by the luminescence excitation spectra and infrared(IR) spectra. As compared to the pure terbium complex powder, the silica gel containing terbium complex exhibits its characteristic emission and presents a longer fluorescence lifetime than that for the pure complex. The luminescence properties of the complex containing;silica gel were investigated and compared with that of both terbium doped the silica gel and thp pure complex powder. The reasons leading to the above results were also discussed.

Studies on blends of LLDPE and polar polymers compatibilized by a random copolymer

Compatibilization of blends of Linear low-density polyethylene (LLDPE)-poly(methyl methacrylate) (PMMA) and LLDPE-copolymer of methyl methacrylate (MMA) and 4-vinylpyridine (poly(MMA-co-4VP) with poly(ethylene-co-methacrylic acid) (EMAA) have been studied. Mechanical properties of the LLDPE-PMMA blends increase upon addition of EMAA. In order to further improve interfacial adhesion of LLDPE and PMMA, 4-vinyl pyridine units are introduced into PMMA chains, or poly(MMA-co-4VP) is used as the polar polymer. In LLDPE-poly(MMA-co-4VP)-EMAA blends, interaction of MAA in EMAA with 4VP of poly(MMA-co-4VP) causes a band shift in the infrared (IR) spectra. Chemical shifts of N-1s binding energy in X-ray photoelectronic spectroscopy (XPS) experiments indicate a transfer of proton from MAA to 4VP. Scanning electron microscopy (SEM) pictures show that the morphology of the blends were improved upon addition of EMAA. Nonradiative energy transfer (NRET) fluorescence results attest that there exists interdiffusion of chromophore-labeled LLDPE chains and chromophore-labeled poly(MMA-co-4VP) chains in the interface. Based on experimental results, the mechanism of compatibilization is studied in detail. Compatibilization is realized through the interaction between MAA in EMAA with 4VP in poly(MMA-co-4VP). (C) 1999 John Wiley & Sons, Inc.

Structure, luminescence and magnetic properties of AgLnW(2)O(8) (Ln = Eu, Gd, Tb and Dy) compounds

Four new compounds AgLnW(2)O(8) (Ln = Eu, Gd, Tb and Dy) are prepared by solid-state reactions. They crystallize with a scheelite-related monoclinic symmetry. Infrared (IR) spectra show complicated absorption transitions in the region of 1000-400 cm(-1) that are similar to those of AgLnMo(2)O(8). Broad excitation and emission bands of the tungstate group are observed in AgGdW2O8 and AgTbW2O8 with a large Stokes shift, 12 573 and 12 387 cm(-1), respectively. Excitation and emission spectra of AgLnW(2)O(8) (Ln = Eu, Gd and Tb) show that energy transfer from the tungstate to EU3+, Gd3+ and Tb3+ occurs and that Eu3+ ions occupy a single crystallographic site with the C-2 Site symmetry. (C) 1997 Elsevier Science Ltd. All rights reserved.

Fine interference fringes formed in high-order harmonic spectra generated by infrared driving laser pulses

We experimentally investigate the high-order harmonic generation in argon gas using a driving laser pulse at a center wavelength of 1240 nm. High-contrast fine interference fringes could be observed in the harmonic spectra near the propagation axis, which is attributed to the interference between long and short quantum paths. We also systematically examine the variation of the interference fringe pattern with increasing energy of the driving pulse and with different phase-matching conditions.

Fast Discrimination of Commerical Corn Varieties Based on Near Infrared Spectra

The existing methods for the discrimination of varieties of commodity corn seed are unable to process batch data and speed up identification, and very time consuming and costly. The present paper developed a new approach to the fast discrimination of varieties of commodity corn by means of near infrared spectral data. Firstly, the experiment obtained spectral data of 37 varieties of commodity corn seed with the Fourier transform near infrared spectrometer in the wavenurnber range from 4 000 to 12 000 cm (1). Secondly, the original data were pretreated using statistics method of normalization in order to eliminate noise and improve the efficiency of models. Thirdly, a new way based on sample standard deviation was used to select the characteristic spectral regions, and it can search very different wavenumbers among all wavenumbers and reduce the amount of data in part. Fourthly, principal component analysis (PCA) was used to compress spectral data into several variables, and the cumulate reliabilities of the first ten components were more than 99.98%. Finally, according to the first ten components, recognition models were established based on BPR. For every 25 samples in each variety, 15 samples were randomly selected as the training set. The remaining 10 samples of the same variety were used as the first testing set, and all the 900 samples of the other varieties were used as the second testing set. Calculation results showed that the average correctness recognition rate of the 37 varieties of corn seed was 94.3%. Testing results indicate that the discrimination method had higher precision than the discrimination of various kinds of commodity corn seed. In short, it is feasible to discriminate various varieties of commodity corn seed based on near infrared spectroscopy and BPR.

Infrared spectra and VUV excitation properties of BaLnB(9)O(16): Re (Ln = La, Gd; Re = Eu, Tb)

The infrared spectra of BaLnB(9)O(16):Re, along with the VUV excitation spectra, have been measured. The spectra were tentatively interpreted in terms of the data on absorptions of the borate groups and band structure. It was observed that there are absorption due to BO3 and BO4 groups, indicating that there are BO3 and BO4 groups in BaLnB(9)O(16). It is found that absorption of the borate groups is located in the range from 120 to 170 mn. This result reveals that there is an energy transfer from host to the rare earth ions. It also observed that the energy of charge transfer band, the host absorption, the total crystal field splitting of d-levels of Tb3+ increase with the decrease in the Ln(3+) radius. (C) 2001 Elsevier Science B.V. All rights reserved.