Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection measurements

We investigate the dependence of the differential reflection on the structure parameters of quantum dot (QD) heterostructures in pump-probe reflection measurements by both numerical simulations based on the finite-difference time-domain technique and theoretical calculations based on the theory of dielectric films. It is revealed that the value and sign of the differential reflection strongly depend on the thickness of the cap layer and the QD layer. In addition, a comparison between the carrier dynamics in undoped and p-doped InAs/GaAs QDs is carried out by pump-probe reflection measurements. The carrier capture time from the GaAs barrier into the InAs wetting layer and that from the InAs wetting layer into the InAs QDs are extracted by appropriately fitting differential reflection spectra. Moreover, the dependence of the carrier dynamics on the injected carrier density is identified. A detailed analysis of the carrier dynamics in the undoped and p-doped QDs based on the differential reflection spectra is presented, and its difference with that derived from the time-resolved photoluminescence is discussed. (C) 2008 American Institute of Physics.

Modes in square resonators

Modes in square resonators are analyzed and classified according to the irreducible representations of the point group C-4v. If the mode numbers p and q that denote the number of wave nodes in the directions of two orthogonal square sides are unequal and have the same even-odd characteristics, the corresponding double modes are accidentally degenerate and can be combined into two new distributions with definite parities relative to the square diagonal mirror planes. The distributions with odd parities belong to the whispering-gallery-like modes in square resonators. The mode frequencies and quality factors are also calculated by the finite-difference time-domain technique and Pade approximation method. The numerically calculated mode frequencies agree with the theoretical ones very well and the whispering-gallery-like modes have quality factors much higher than other modes, including their accidentally degenerate counterparts in square resonators.

Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants

Using first-principles methods, we have systematically calculated the defect formation energies and transition energy levels of group-III and group-V impurities doped in H passivated Si quantum dots (QDs) as functions of the QD size. The general chemical trends found in the QDs are similar to that found in bulk Si. We show that defect formation energy and transition energy level increase when the size of the QD decreases; thus, doping in small Si QDs becomes more difficult. B-Si has the lowest acceptor transition energy level, and it is more stable near the surface than at the center of the H passivated Si QD. On the other hand, P-Si has the smallest donor ionization energy, and it prefers to stay at the interior of the H passivated Si QD. We explained the general chemical trends and the dependence on the QD size in terms of the atomic chemical potentials and quantum confinement effects.

Design considerations for a silicon-based p-i-n phase modulator in a double ridge waveguide with side isolating grooves

We present detail design considerations and simulation results of a forward biased carrier injection p-i-n modulator integrated on SOI rib waveguides. To minimize the free carrier absorption loss while keeping the comparatively small lateral dimensions of the modulator as required for high speed operation, we proposed two structural improvements, namely the double ridge (terrace ridge) structure and the isolating grooves at both sides of the double ridge. With improved carrier injection and optical confinement structure, the simulated modulator response time is in sub-ns range and absorption loss is minimized.

on string languages generated by spiking neural p systems

We continue the study of spiking neural P systems by considering these computing devices as binary string generators: the set of spike trains of halting computations of a given system constitutes the language generated by that system. Although the "direct" generative capacity of spiking neural P systems is rather restricted (some very simple languages cannot be generated in this framework), regular languages are inverse-morphic images of languages of finite spiking neural P systems, and recursively enumerable languages are projections of inverse-morphic images of languages generated by spiking neural P systems.

PASSIVATION OF COPPER BY LITHIUM IN P-TYPE GAAS

We report the passivation of two deep copper-related acceptor levels in Cu-diffused p-type GaAs by the group-I element lithium. The deep-level-transient-spectroscopy (DLTS) signals of the well-known Cu-related levels with apparent activation energies 0.15 eV and 0.40 eV disappear in Cu-diffused samples when they are diffused with Li, but can be reactivated by annealing. Photoluminescence measurements show a corresponding disappearance and reappearance of the copper-related luminescence at 1.36 eV. Also we observe with DLT'S an energy level at E(V) + 0.32 eV in the Cu-Li-diff-used samples. The level is neither present in the Cu-diffused samples before Li diffusion nor in Cu-Li-diffused samples after annealing. As the level is not observed in starting materials or solely Li-diffused samples we suggest that it is related to a Cu-Li complex.

RADIATIVE RECOMBINATION IN N-TYPE AND P-TYPE GAAS COMPENSATED WITH LI

We report fundamental changes of the radiative recombination in a wide range of n-type and p-type GaAs after diffusion with the group-I element Li. These optical properties are found to be a bulk property and closely related to the electrical conductivity of the samples. In the Li-doped samples the radiative recombination is characterized by emissions with excitation-dependent peak positions which shift to lower energies with increasing degree of compensation and concentration of Li. These properties are shown to be in qualitative agreement with fluctuations of the electrostatic potential in strongly compensated systems. For Li-diffusion temperatures above 700-800-degrees-C semi-insulating conditions with electrical resistivity exceeding 10(7) OMEGA cm are obtained for all conducting starting materials. In this heavy Li-doping regime, the simple model of fluctuating potentials is shown to be inadequate for explaining the. experimental observations unless the number of charged impurities is reduced through complexing with Li. For samples doped with low concentrations of Li, on the other hand, the photoluminescence properties are found to be characteristic of impurity-related emissions.

LITHIUM PASSIVATION OF ZN AND CD ACCEPTORS IN P-TYPE GAAS

We report lithium passivation of the shallow acceptors Zn and Cd in p-type GaAs which we attribute to the formation of neutral Li-Zn and Li-Cd complexes. Similar to hydrogen, another group-I element, lithium strongly reduces the concentration of free holes when introduced into p-type GaAs. The passivation is inferred from an increase of both the hole mobility and the resisitivity throughout the bulk of the sample. It is observed most clearly for Li concentrations comparable to the shallow-acceptor concentration. In addition, compensation of shallow acceptors by randomly distributed donors is present in varying degree in the Li-diffused samples. Unlike hydrogenation of n-type GaAs, Li doping shows no evidence of neutralizing shallow donors in GaAs.

U-transformation-finite element method in 3-dimensional analysis of orthotropic laminates

For an orthotropic laminate, an equivalent system with doubly cyclic periodicity is introduced. Then a 3-dimensional finite element model for the equivalent system is transformed into the unitary space, where the large finite element matrix equation is decoupled into some small matrix equations. Such a decoupling very efficiently reduces the computational effort. For an orthotropic laminate with four clamped edges, no exact elasticity solution is available, and the deflection values predicted by different methods have a considerable difference each other for a small length-to-thickness ratio. The present predictions are the largest because the present method is a full 3-dimensional finite element analysis without superfluous constraints. Illustrative numerical examples are presented to observe the distributions of stresses through the thickness of the laminates. (C) 2010 Elsevier Ltd. All rights reserved.

Vortices in (Abelian) Chern-Simons gauge theory

The vortex solutions of various classical planar field theories with (Abelian) Chern-Simons term are reviewed. Relativistic vortices, put forward by Paul and Khare, arise when the Abelian Higgs model is augmented with the Chern-Simons term. Adding a suitable sixth-order potential and turning off the Maxwell term provides us with pure Chern-Simons theory, with both topological and non-topological self-dual vortices, as found by Hong-Kim-Pac, and by Jackiw-Lee-Weinberg. The non-relativistic limit of the latter leads to non-topological Jackiw-Pi vortices with a pure fourth-order potential. Explicit solutions are found by solving the Liouville equation. The scalar matter field can be replaced by spinors, leading to fermionic vortices. Alternatively, topological vortices in external field are constructed in the phenomenological model proposed by Zhang-Hansson-Kivelson. Non-relativistic Maxwell-Chern-Simons vortices are also studied. The Schrodinger symmetry of Jackiw-Pi vortices, as well as the construction of some time-dependent vortices, can be explained by the conformal properties of non-relativistic space-time, derived in a Kaluza-Klein-type framework. (c) 2009 Elsevier B.V. All rights reserved.

Combined study of gamma p ->eta p and pi(-)p ->eta n in a chiral constituent quark approach

Within a chiral constituent quark model approach, η-meson production on the proton via electromagnetic and hadron probes is studied. With few parameters, the differential cross section and polarized beam asymmetry for γp → ηp and differential cross section for π − p → ηn processes are calculated and successfully compared with the data in the center-of-mass energy range from threshold up to 2 GeV. The five known resonances S11(1535), S11(1650), P13(1720),D13(1520), and F15(1680) are found to be dominant in the reaction mechanisms in both channels. Possible roles played by new resonances are also investigated; and in the photoproduction channel, significant contribution from S11 and D15 resonances, with masses around 1715 and 2090 MeV, respectively, are deduced. For the so-called missing resonances, no evidence is found within the investigated reactions. The helicity amplitudes and decay widths of N ∗ → πN, ηN are also presented and found to be consistent with the Particle Data Group values.

Symmetry energy and isovector giant dipole resonance in finite nuclei

We study the relationship between the properties of the isovector giant dipole resonance of finite nuclei and the symmetry energy in the framework of the relativistic mean field theory with six different parameter sets of nonlinear effective Lagrangian. A strong linear correlation of excited energies of the dipole resonance in finite nuclei and symmetry energy at and below the saturation density is found. This linear correlation leads to the symmetry energy at the saturation density at the interval 33.0MeV <= S(po) <= 37.0 MeV. The comparison to the present experimental data in the soft dipole mode of (132) Sn constrains approximately the symmetry energy at p = 0.1 fm(-3) at the interval 21.2MeV similar to 22.5 MeV. It is proposed that a precise measurement of the soft dipole mode in neutron rich nuclei could set up an important constraint on the equation of state for asymmetric nuclear matter.

Critical behavior of multifragmentation in finite nuclei and extraction of critical exponents

Using a phenomenological asymmetric nuclear equation of state, we obtained pressure-density isotherms of the finite nucleus Sn-112 simulated in r-space and in p-space and constructed the nuclear fragments by using the coalescence model. After correlatively analysing the fragments, the signal of critical behavior has been found and critical exponents were also extracted.

Synthesis and characterisation of novel imidazolium-based ionic liquid crystals with a p-nitroazobenzene moiety

A novel series of compounds with different counter anions, i.e. 1-{[4-(4-nitrophenylazo)phenyloxy]}alkyl-3-methyl-1H-imidazol-3-ium bromide salts (C-n , n=3, 6, 10) and tetrafluoroborate salts (D-n , n=3, 6, 10), were synthesised by the incorporation of an imidazolium group into paraffin side chain-terminated 4-nitroazobenzene derivatives. Their chemical structures were determined by H-1 NMR, C-13 NMR, UV spectroscopy and elemental analysis.

Two Mn(2)(II)Ln(4)(III) (Ln = Gd, Eu) hexanuclear compounds of p-tert-butylsulfinylcalix[4]arene

Two 3d-4f heterometallic compounds of p-tert-butylsulfinylcalix[4] arene were synthesized by the solvothermal method and characterized by some hinged double-dumbbell-like subunits in which two perpendicular dumbbell entities were constructed by an in-between isosceles triangle Mn(II)Ln(2)(III), and two tail-to-tail calixarene molecules, and hinged by the lanthanide-sulfinyl group bonding. The magnetic properties of the title compounds were examined.