431 resultados para emission properties
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The spontaneous emission properties of a single layer organic film in plane optical microcavities were studied. Optical microcavity was formed by a Tris(8-quinolinolato) aluminium (Alq) film sandwiched between a distributed Bragg reflector (DBR) and a Ag metallic reflector. Two kinds of microcavities were devised by using a different DBR structure. Compared with a Alq film, significantly spectral narrowing and intensity enhancement was observed in the two microcavities, which is attributed to the microcavity effect. The spectra characteristics of the two microcavities showed that the structure of DBR has much influence on the emission properties of a microcavity. (C) 2000 Elsevier Science S.A. All rights reserved.
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Highly ordered AlN nanowire arrays were synthesized via a simple physical vapor deposition method on sapphire substrate. The nanowires have an extremely sharp tip < 10 nm, with the average length around 3 mu m. Raman spectroscopy analysis on the AlN nanowire arrays revealed that the lifetime of the phonons is shorter than that in bulk AlN. The transmission spectra of the AlN nanowires showed a blueshift similar to 0.27 eV at the absorption edge with that of the bulk AlN, which is closely related to the small size of the nanowires. (c) 2005 American Institute of Physics.
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Highly ordered TiO2/Ti nanotube arrays were fabricated by anodic oxidation method in 0.5 wt% HF. Using prepared TiO2/Ti nanotube arrays deposited Ni nanoparticles as substrate, high quality diamond-like carbon nanorods (DLCNRs) were synthesized by a conventional method of chemical vapor deposition at 750 degrees C in nitrogen atmosphere. DLCNRs were analyzed by filed emission scanning electron microscopy and Raman spectrometer. It is very interesting that DLCNRs possess pagoda shape with the length of 3-10 mu m. Raman spectra show two strong peaks about 1332 cm (1) and 1598 cm (1), indicating the formation of diamond-like carbon. The field emission measurements suggest that DLCNRs/TiO2/Ti has excellent field emission properties, a low turn-on field about 3.0 V/mu m, no evident decay at 3.4 mA/cm(2) in 480 min. (C) 2009 Elsevier B. V. All rights reserved.
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Well-aligned TiO2/Ti nanotube arrays were electrochemically formed in a HF solution for different anodization times. Field emission scanning electron microscopy (FE-SEM) images reveal that anodization time had a great influence on the morphology of TiO2/Ti nanotube arrays. The composition of resulting nanotubes was analyzed by X-ray photoelectron spectroscopy (XPS). Field emission properties of the prepared samples with different morphologies were investigated by the Fowler-Nordheim (F-N) theory. The results indicate that the morphology can affect field emission behaviors. TiO2/Ti nanotube arrays with clear, uniform, and short nanotubes display moderate field emission properties, and have the better turn-on field of 4.6 V/mu m and good field emission stability. (C) 2010 Elsevier B.V. All rights reserved.
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ZnO:Al thin films with c-axis preferred orientation were deposited on glass and Si substrates using RF magnetron sputtering technique. The effect of substrate on the structural and optical properties of ZnO:Al films were investigated. The results showed a strong blue peak from glass-substrate ZnO:Al film whose intensity became weak when deposited on Si substrate. However, the full width at half maxima (FWHM) of the Si-substrate ZnO:Al (0 0 2) peaks decreased evidently and the grain size increased. Finally, we discussed the influence of annealing temperature on the structural and optical properties of Si-substrate ZnO:Al films. After annealing, the crystal quality of Si-substrate ZnO:Al thin films was markedly improved and the intensity of blue peak (similar to 445 nm) increased noticeably. This observation may indicate that the visible emission properties of the ZnO:Al films are dependent more on the film crystallinity than on the film stoichiometry. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.
Resumo:
The amplified spontaneous emission properties of a 2, 1, 3-benzothiadiazole attached polyfluorene semiconductor polymer were studied. The conjugated polymer shows a high photoluminescence quantum efficiency of 67% and emits a narrowed blue emissive spectrum with a full width at half-maximum of 3.6 nm when optically pumped, indicating better lasing action. A threshold energy as low as 0.22 mJ pulse(-1) cm(-2), a net gain of 40.54 cm(-1) and a loss of 7.8 cm(-1) were obtained, demonstrating that this conjugated polymer could be a promising candidate as the gain medium for the fabrication of blue polymer lasers.
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Density functional theory (DFT) electronic structure calculations were carried out to predict the structures and the absorption and emission spectra for porphyrin and a series of carbaporphyrins-carbaporphyrin, adj-dicarbaporphyrin, opp-dicarbaporphyrin, tricarbaporphyrin and tetracarbaporphyrin. The ground- and excited-state geometries were optimized at the B3LYP/6-31g(d) and CIS/6-31g(d) level, respectively. The optimized ground-state geometry and absorption spectra of porphyrin, calculated by DFT and time-dependent DFT (TDDFT), are comparable with the available experimental values. Based on the optimized excited-state geometries obtained by CIS/6-31g(d) method, the emission properties are calculated using TDDFT method at the B3LYP/6-31g(d) level. The effects of the substitution of nitrogen atoms with carbon atoms at the center positions of porphyrin are discussed. The results indicate that the two-pyrrole nitrogens are important to the chemical and physical properties for porphyrin.
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稀土离子掺杂的氧氟玻璃是一种新型上转换发光材料。制备了Tm^3/Yb^3+单掺、共掺的摩尔分数为n(SiO2)-0.30,n(PbF2)-0.50,n=(Al2O3)=0.15,n(AlF3)=(0.049-x),n(TmF3)=y,n(YbF3)=x(x=0,0.001,0.010,0.015,0.020,y=0,0.001)系统氧氟玻璃,研究了其上转换发光特性、分析了其上转换发光机理。研究发现,在970nm抽运光源激发下,Tm^3+单掺时没有可见光上转换发射;而加入Yb^3+后产生了强的蓝光(452n
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Ce3+ ions were introduced into the Er3+/Yb3+ -codoped TeO2-WO3-ZnO glasses, and the effect of Ce3+ on the emission properties at 1.5 mu m band and the upconversion luminescence of Er3+ in the glasses was investigated. With the increasing of Ce3+ concentration, the emission intensity of Er3+ at 1.5 mu m band increases firstly, and then decreases. The optimal doping concentration of Ce3+ is about 2.07 x 10(20)/cm(3). As for the Er3+ emission at 1.5-mu m band, the fluorescence lifetime decreases a little from 3.4ms to 3.0ms, while the full width at half maximum (FWHM) hardly changes with the increase of Cc 3+ concentration. Due to the effective cross relaxation between Ce3+ and Er3+ : Er3+ (I-4(11/2)) + Ce3+ (F-2(5/2)) -> Er3+ (I-4(13/2)) + Ce3+ (F-2(7/2)), the upconversion emission intensity of Er3+ is reduced greatly. But when Ce3+ -doping concentration is too high, the other cross relaxation between Ce3+ and Er3+ : Er3+ (4I(13/2)) + Ce3+ (F-2(5/2)) -> Er3+ (I-4(15/2)) + Ce3+ (F-2(7/2)) happens, which depopulates the I-4(13/2) level of Er3+ and results in the decrease of the emission intensity and fluorescence lifetime of Er3+ at 1.5 mu m band.
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研究了掺铒氟(卤)磷碲酸盐玻璃的吸收光谱和上转换荧光光谱,探讨了Er^2+在氟(卤)磷碲酸盐玻璃中的上转换发光机理.在975nm激光二极管抽运下产生强烈的上转换红光及绿光。且红光的发光强度要远远大于绿光.以PbCl2取代PbF2后,红光的发光强度下降,而绿光却没有明显变化;以ZnCl2取代ZnF2达5mol%时,红光和绿光的发光强度均明显增大.
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制备了用于离子交换法制备光波导器件的掺铒碲-钨-钠玻璃基质。应用扎得-奥菲而特(Judd—Ofelt)理论计算了玻璃样品的三个强度参量,由强度参量计算了Er^3+离子的自发跃迁几率、荧光分支比等光谱参量;应用麦克库玻(McCumber)理论,计算了Er^3+离子在1.5μm的受激发射截面,荧光测试发现Er^3+离子的荧光半峰全宽可达65nm。比较了Er^3+离子在不同玻璃基质中的光谱特性。结果表明,Er^3+离子在碲-钨-钠玻璃中具有较高的受激发射截面和较宽的荧光半峰全宽,可以用于宽带光波导器件的制备。
Resumo:
We report a novel phenomenon in GeS2-In2S3-CsI chalcohalide glass doped with Tm3+ ions. Under irradiation with an 808 nm laser diode, a bright red emission centered at 700 nm is observed for the first time in this glass. The log-log correlation between integrated emission intensity and pump power reveals that a two-photon absorption process is involved in the phenomenon, suggesting that the F-3(3,2) -> H-3(6) transition of Tm3+ ions is responsible for the appearance of the red emission. The results indicate that the indium (In) based chalcohalide glass containing Tm3+ ions is expected to find applications in visible lasers, high density optical storage and three-dimensional color displays. (C) 2009 Elsevier B.V. All rights reserved.
Resumo:
随着有机/聚合物电致发光材料在有机发光二极管上的应用以及有机晶体管和有机太阳能电池的研制成功,有机/聚合物电致发光材料的优异的光电性能、低廉的生产成本、简单的加工工艺、宽广的选材范围和良好的机械性能等优点极大地吸引科学家们的研究兴趣,并开始了有机/聚合物发光薄膜的放大的自发发射和受激发射行为的研究。有机分子和聚合物的诸多如易得、廉价、结构多样、功能易调节、大的横截面积、高的荧光量子效率和低的自吸收等优点使其制成的激光器在未来光纤通讯领域中呈现了诱人的应用前景。新的有机激光材料不断涌现、器件结构不断推陈出新、新的激发原理不断提出并得到修正已经成为有机/聚合物固体激光研究领域的三大特点。本论文以研究有机材料的激光特性为目的,通过对有机染料DCJTB和三芳胺取代1,8-蔡酰亚胺齐聚物掺杂聚合物薄膜的放大的自发发射和受激发射特性的研究,探讨实现低闭值、高增益光泵浦有机聚合物激光的方法及影响器件性能的因素,阐明放大自发发射的工作机制,为进一步探讨电泵浦有机聚合物激光器提供材料体系和理论依据。1、研究了DCJTB掺杂聚合物薄膜的放大自发发射特性,分析了光泵浦条件下光谱窄化的放大自发发射机制,对ASE增益和损耗进行了讨论和数值拟合,并对增益方程进行了饱和修正。DCJTB:PS薄膜具有较低的闺值(0.16mJ·Pulse~(_1)·cm-2)、高的增益系数(40.72cm-1)、低的损耗值2.49cm一l和高的荧光量子效率(70.4%),其波导增益的波长分布呈明显的洛仑兹分布,增益饱和是均匀展宽的。与DCM比较发现,自由体积是决定材料性能的重要因素,大的自由体积有利于实现低闭值、高增益。我们的研究结果表明,DCJTB是非常好的激光介质材料。2、从ASE的发射波长、ASE闭值、增益和损耗四个技术指标出发,详细研究了激发光波长、聚合物基体、旋涂速度及基片等对DCJTB:PS薄膜放大自发发射(ASE)的影响,短的激发波长和合适的基体材料可以显著地降低闭值和提高增益,薄膜厚度和基片也对ASE性能有很大影响。利用琢lord镜面体系,研究了DCJTB染料掺杂相列向液晶体系的分布反馈激光特性,在电场作用下,可以有效地对TE、TM两种模式的输出强度进行调解。3、把电子传输/发光有机小分子材料Alq3掺杂到DCJTB和C545T掺杂聚合物薄膜,研究了它们的放大自发发射特性。通过在不同激发光波长激发下不同Alq3掺杂浓度对ASE性能影响的研究,发现掺杂Alq3显著地降低了闭值,增加了增益和减小了损耗。由于Alq3是一种良好的半导体有机发光材料,Alq3的引入对电泵浦有机聚合物激光器的研究具有重要的意义。4、研究了三种在4位氨基位置引入不同三芳胺功能基团的红光1,8-蔡酞亚胺齐聚物的放大自发发射特性,研究结果表明,三芳胺取代1,8蔡酞亚胺齐聚物具有低阂值、高增益和低损耗的特点,显示了较小的浓度淬灭效应,即使掺杂浓度高到60%仍可以观察到放大的自发发射现象,表明三芳胺取代1,8茶酞亚胺是一类非常有应用前景的有机半导体激光材料体系。
Resumo:
ZnO films doped with different contents of indium were prepared by radio frequency sputtering technique. The structural, optical and emission properties of the films were characterized at room temperature using XRD, XPS, UV-vis-NIR and PL techniques. Results showed that the indium was successfully incorporated into the c-axis preferred orientated ZnO films, and the In-doped ZnO films are of over 80% optical transparency in the visible range. Furthermore, a double peak of blue-violet emission with a constant energy interval (similar to 0.17 eV) was observed in the PL spectra of the samples with area ratio of indium chips to the Zn target larger than 2.0%. The blue peak comes from the electron transition from the Zn-i level to the top of the valence band and the violet peak from the In-Zn donor level to the V-Zn level, respectively.