Temperature dependence of effective g factor in diluted magnetic semiconductor (Ga,Mn)As

Time resolved magneto-optic Kerr rotation measurements of optically induced spin quantum beats are performed on heavily doped bulk (Ga,Mn)As diluted magnetic semiconductors (DMS). An effective g-factor of about 0.2-0.3 over a wide range of temperature for both as-grown and annealed (Ga,Mn)As samples is obtained. A larger effective g-factor at lower temperature and an increase of the spin relaxation with increasing in-plane magnetic field are observed and attributed to the stronger p-d exchange interaction between holes and the localized magnetic ion spins, leading to a larger Zeeman splitting and heavy-hole-light-hole mixing. An abnormal dip structure of the g-factor in the vicinity of the Curie temperature suggests that the mean-field model is insufficient to describe the interactions and dynamics of spins in DMS because it neglects the short-range spin correlation effect. (c) 2008 American Institute of Physics.

The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates

Si-doped nonpolar a-plane GaN films were grown on nanopatterned sapphire substrates by a low-pressure metal organic chemical vapor deposition (MOCVD) system. The structure, morphology and field emission properties of the sample were studied by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and field emission measurement. The XRD analysis shows that the sample is a nonpolar a-plane (11 (2) over bar0) GaN film. The field emission measurement shows that the nonpolar GaN films exhibit excellent field emission properties with a threshold emission field of as low as 10 V/mu m at a current density of 0.63 mu A/cm(2), and a high field emission current density of 74 mA/cm(2) at an applied field of 24 V/mu m. Moreover, the Fowler-Nordheirn plot of the sample fits a near linear relation. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment

The ZnO films deposited by magnetron sputtering were treated by H/O plasma. It is found that the field emission (FE) characteristics of the ZnO film are considerably improved after H-plasma treatment and slightly deteriorated after O-plasma treatment. The improvement of FE characteristics is attributed to the reduced work function and the increased conductivity of the ZnO H films. Conductive atomic force microscopy was employed to investigate the effect of the plasma treatment on the nanoscale conductivity of ZnO, these findings correlate well with the FE data and facilitate a clearer description of electron emission from the ZnO H films.

Field emission mechanism from a single-layer ultra-thin semiconductor film cathode

Field emission (FE) from a single-layer ultra-thin semiconductor film cathode (SUSC) on a metal substrate has been investigated theoretically. The self-consistent quantum FE model is developed by synthetically considering the energy band bending and electron scattering. As a typical example, we calculate the FE properties of ultra-thin A1N film with an adjustable film thickness from 1 to 10 nm. The calculated results show that the FE characteristic is evidently modulated by varying the film thickness, and there is an optimum thickness of about 3 nm. Furthermore, a four-step FE mechanism is suggested such that the distinct FE current of a SUSC is rooted in the thickness sensitivity of its quantum structure, and the optimum FE properties of the SUSC should be attributed to the change in the effective potential combined with the attenuation of electron scattering.

Structural, photoluminescence, and field emission properties of vertically well-aligned ZnO nanorod arrays

The self-assembled growth of vertically well-aligned ZnO nanorod arrays with uniform length and diameter on Si substrate has been demonstrated via thermal evaporation and vapor-phase transport. The structural, photoluminescence (PL), and field emission properties of the as-prepared nanorod arrays were investigated. The PL spectrum at 10 K shows a strong and sharp near-band gap emission (NBE) peak ( full width at half-maximum (FWHM) = 4.7 meV) and a weak neglectable deep-level emission (DL) peak (I-NBE/I-DL= 220), which implies its good crystallinity and high optical quality. The room-temperature NBE peak was deduced to the composition of free exciton and its first-order replicas emissions by temperature-dependent PL spectra. The field emission measurements indicate that, with a vacuum gap of 400 Am, the turn-on field and threshold field is as low as 2.3 and 4.2 V/mu m. The field enhancement factor beta and vacuum gap d follows a universal equation.

Efficiently producing single-walled carbon nanotube rings and investigation of their field emission properties

Single-walled carbon nanotube (SWNT) rings with a diameter of about 100 nm have been prepared by thermally decomposing hydrocarbon in a floating catalyst system. These rings appeared to consist mostly of SWNT toroids. High resolution transmission electron microscopy showed that these rings were composed of tens of SWNTs with a tightly packed arrangement. The production of SWNT rings was improved through optimizing various growth parameters, such as growth temperature, sublimation temperature of the catalyst, different gas flows and different catalyst components. The growth mechanism of the SWNT rings is discussed. In the field emission measurements we found that field emission from a halved ring is better than that from a whole SWNT ring, which contributed to the better emission from two opened ends of the nanotubes of the halved SWNT ring.

Electron ground state energy level determination of ZnSe self-organized quantum dots embedded in ZnS

Optical and electrical characterization of the ZnS self-organized quantum dots (QDs) embedded in ZnS by molecular beam epitaxy have been investigated using photoluminescence (PL), capacitance-voltage (C-V), and deep level transient Fourier spectroscopy (DLTFS) techniques. The temperature dependence of the free exciton emission was employed to clarify the mechanism of the PL thermal quenching processes in the ZnSe QDs. The PL experimental data are well explained by a two-step quenching process. The C-V and DLTFS techniques were used to obtain the quantitative information on the electron thermal emission from the ZnSe QDs. The correlation between the measured electron emission from the ZnSe QDs in the DLTFS and the observed electron accumulation in the C-V measurements was clearly demonstrated. The emission energy for the ground state of the ZnSe QDs was determined to be at about 120 meV below the conduction band edge of the ZnS barrier, which is in good agreement with the thermal activation energy, 130 meV, obtained by fitting the thermal quenching process of the free exciton PL peak. (C) 2003 American Institute of Physics.

Field emission from the structure of well-aligned TiO2/Ti nanotube arrays

Well-aligned TiO2/Ti nanotube arrays were synthesized by anodic oxidation of titanium foil in 0.5 wt.% HF in various anoclization voltages. The images of filed emission scanning electron microscopy indicate that the nanotubes structure parameters, such as diameter, wall thickness and density, can be controlled by adjusting the anoclization voltage. The peaks at 25.3 degrees and 48.0 degrees of X-ray diffraction pattern illuminate that the TiO2 nanotube arrays annealed at 500 degrees C are mainly in anatase phase. The filed emission (FE) properties of the samples were investigated. A turn-on electric field 7.8 V/mu m, a field enhancement factors approximately 870 and a highest FE current density 3.4 mA/cm(2) were obtained. The emission current (2.3 mA/cm(2) at 18.8 V/mu m) was quite stable within 480 min. The results show that the FE properties of TiO2/Ti have much relation to the structure parameters.

Synthesis and field emission of diamond-like carbon nanorods on TiO2/Ti nanotube arrays

Highly ordered TiO2/Ti nanotube arrays were fabricated by anodic oxidation method in 0.5 wt% HF. Using prepared TiO2/Ti nanotube arrays deposited Ni nanoparticles as substrate, high quality diamond-like carbon nanorods (DLCNRs) were synthesized by a conventional method of chemical vapor deposition at 750 degrees C in nitrogen atmosphere. DLCNRs were analyzed by filed emission scanning electron microscopy and Raman spectrometer. It is very interesting that DLCNRs possess pagoda shape with the length of 3-10 mu m. Raman spectra show two strong peaks about 1332 cm (1) and 1598 cm (1), indicating the formation of diamond-like carbon. The field emission measurements suggest that DLCNRs/TiO2/Ti has excellent field emission properties, a low turn-on field about 3.0 V/mu m, no evident decay at 3.4 mA/cm(2) in 480 min. (C) 2009 Elsevier B. V. All rights reserved.

Field emission from TiO2/Ti nanotube arrays with different morphologies

Well-aligned TiO2/Ti nanotube arrays were electrochemically formed in a HF solution for different anodization times. Field emission scanning electron microscopy (FE-SEM) images reveal that anodization time had a great influence on the morphology of TiO2/Ti nanotube arrays. The composition of resulting nanotubes was analyzed by X-ray photoelectron spectroscopy (XPS). Field emission properties of the prepared samples with different morphologies were investigated by the Fowler-Nordheim (F-N) theory. The results indicate that the morphology can affect field emission behaviors. TiO2/Ti nanotube arrays with clear, uniform, and short nanotubes display moderate field emission properties, and have the better turn-on field of 4.6 V/mu m and good field emission stability. (C) 2010 Elsevier B.V. All rights reserved.

Host-sensitized luminescence of Dy3+, Pr3+, Tb3+ in polycrystalline SrIn2O4 for field emission displays

SrIn2O4:Dy3+/Pr3+/Tb3+ white/red/green phosphors were prepared by the Pechini sol-gel process. X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), diffuse reflectance, photoluminescence, cathodoluminescence spectra, and lifetimes were utilized to characterize the samples. XRD reveal that the samples begin to crystallize at 800 degrees C and pure SrIn2O4 phase can be obtained at 900 degrees C. FE-SEM images indicate that the SrIn2O4:Dy3+, SrIn2O4:Pr3+, and SrIn2O4:Tb3+ samples consist of fine and spherical grains with size around 200-400 nm. Under the excitation of ultraviolet light and low-voltage electron beams (1 - 5 kV), the SrIn2O4:Dy3+, SrIn2O4: Pr3+, and SrIn2O4: Tb3+ phosphors show the characteristic emissions of Dy3+ (F-4(9/2) - H-6(15/2) at 492 nm and 4F(9/2) - 6H(13/2) at 581 nm, near white), Pr3+ (P-3(0) - H-3(4) at 493 nm, D-1(2) - H-3(4) at 606 nm, and P-3(0) - H-3(6) at 617 nm, red) and Tb3+ (D-5(4) - F-7(6,5,4,3) transitions dominated by D-5(4) - F-7(5) at 544 nm, green), respectively. All of the luminescence resulted from an efficient energy transfer from the SrIn2O4 host lattice to the doped Dy3+, Pr3+, and Tb3+ ions, and the luminescence mechanisms have been proposed.

Synthesis and characterization of monodisperse spherical core-shell structured SiO2@Y3Al5O12 : Ce3+/Tb3+ phosphors for field emission displays

Nanocrystalline Y3Al5O12: Ce3+/Tb3+ ( average crystalline size 30 nm) phosphor layers were coated on non-aggregated, monodisperse and spherical SiO2 particles by the sol-gel method, resulting in the formation of core-shell structured SiO2@Y3Al5O12:Ce3+/Tb3+ particles. X-ray diffraction, Fourier transform infrared spectroscopy, transmission electron microscopy, photoluminescence, cathodoluminescence spectra, as well as lifetimes were utilized to characterize the core-shell structured SiO2@Y3Al5O12: Ce3+/Tb3+ phosphor particles. The obtained core-shell structured phosphors consist of well-dispersed submicron spherical particles with a narrow size distribution. The thickness of the Y3Al5O12:Ce3+/Tb3+ shells on the SiO2 cores ( average size about 500 nm, crystalline size about 30 nm) could be easily tailored by varying the number of deposition cycles (100 nm for four deposition cycles). Under the excitation of ultraviolet and low-voltage electron beams (1-3 kV), the core-shell SiO2@Y3Al5O12:Ce3+/ Tb3+ particles show strong yellow-green and green emission corresponding to the 5d-4f emission of Ce3+ and D-5(4)-F-7(J) ( J = 6, 5, 4, 3) emission of Tb3+, respectively.

Enhanced luminescence of gadolinium niobates by Bi3+ doping for field emission displays

Blue emitting GdNbO4: Bi3+ powder phosphors for field emission displays were prepared by a solid state reaction. Both photoluminescence and cathodoluminescence properties of the materials were investigated. GdNbO4 itself shows only a very weak luminescence in the blue spectral region. By doping Bi3+ in GdNbO4, the luminescence intensity was improved greatly. The emission spectrum of the GdNbO4: Bi3+ consists of a broad band with maximum at 445 nm (lifetime = 0.74 mu s; CIE chromaticity coordinates: x = 0.1519 and y = 0. 1196) for both UV and low voltage (1-7 kV) cathode ray excitation. In GdNbO4:Bi3+ phosphors, the energy transfer from NbO43- to activator Bi3+ occurred.

Dy3+- and Eu3+-doped LaGaO3 nanocrystalline phosphors for field emission displays

Nanocyrstalline LaGaO3 and Dy3+- and Eu3+-doped LaGaO3 were prepared through a Pechini-type sol-gel process. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), photoluminescence, cathodoluminescence spectra, and lifetimes were utilized to characterize the samples. XRD reveals that the samples begin to crystallize at 900 degrees C and pure LaGaO3 phase can be obtained at 1000 degrees C. FE-SEM images indicate that the Dy3+- and Eu3+-doped LaGaO3 samples are both composed of aggregated spherical particles with sizes ranging from 40 to 80 nm. Under the excitation of ultraviolet light and low voltage electron beams (1-5 kV), the undoped LaGaO3 sample shows a strong blue emission peaking at 433 nm, and the Dy3+- and Eu3+-doped LaGaO3 samples show their characteristic emissions of Dy3+ (F-4(9/2)-H-6(15/2) and F-4(9/2)-H-6(13/2) transitions) and Eu3+ (D-5(0,1,2)-F-7(1,2,3,4) transitions), respectively. The relevant luminescence mechanisms are discussed.

Monodisperse spherical core-shell structured SiO2-CaTiO3 : Pr3+ phosphors for field emission displays

Nanocrystalline CaTiO3:Pr3+ phosphor layers were coated on nonaggregated, monodisperse, and spherical SiO2 particles by the sol-gel method, resulting in the formation of core-shell structured SiO2-CaTiO3:Pr3+ particles. X-ray diffraction, Fourier transform infrared spectroscopy, field emission scanning electron microscopy, transmission electron microscopy, photoluminescence, cathodoluminescence spectra, as well as lifetimes were utilized to characterize the core-shell structured SiO2-CaTiO3:Pr3+ phosphor particles. The obtained core-shell structured phosphors consist of well dispersed submicron spherical particles with a narrow size distribution. The thickness of the CaTiO3:Pr3+ shell could be easily controlled by changing the number of deposition cycles (about 70 nm for four deposition cycles). The core-shell SiO2-CaTiO3:Pr3+ particles show a strong red emission corresponding to D-1(2)-H-3(4) (612 nm) of Pr3+ under the excitation of ultraviolet (326 nm) and low voltage electron beams (1-5 kV). These particles may be used in field emission displays.