233 resultados para electro-optic modulation
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zhangdi于2010-03-29批量导入
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Silicon-based high-speed electro-optical modulator is the key component of silicon photonics for future communiction and interconnection systems. In this paper, introduced are the optical mudulation mechanisms in silicon, reviewed are some recent progresses in high-speed silicon modulators, and analyzed are advantages and shortages of the silicon modulators of different types.
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A novel crosslinkable polyurethane is used as the core layer of the electro-optic(E-O) modulator. The refractive index and dispersion of this material have been detected by analyzing the F-P oscillation in transmission spectra. Calculated results from the effective index method are given to design the Mach-Zehnder and straight 5-layer ridge wave-guide device (including the metal electrodes). With light at 1.31 mum being fiber coupled into waveguide, the mode properties of these devices have been demonstrated in a micron control system. The guided mode is accordant with the theoretical analysis.
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The investigations on GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays for optoelectronic smart pixels are reported. The hybrid integration of GaAs/AlGaAs multiple quantum well devices flip-chip bonding directly over 1 mu m silicon CMOS circuits are demonstrated. The GaAs/AlGaAs multiple quantum well devices are designed for 850nm operation. The measurement results under applied biases show the good optoelectronic characteristics of elements in SEED arrays. The 4x4 optoelectronic crossbar structure consisting of hybrid CMOS-SEED smart pixels have been designed, which could be potentially used in optical interconnects for multiple processors.
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Covalent radii of the bonding elements have strong effects on the linear electro-optic coefficients of zinc blende crystals; these effects can be quantitatively determined by investigating the relation between the difference in the atomic sizes rho and the magnitude of the linear electro-optic tensor coefficient r(41). It is interesting to note that for the same cation Zn2+, Ga3+, or In3+ the magnitude of r(41) increases with increased covalent radius of the bonded anion r(beta). Especially with the increasing tendency of the parameter rho, the magnitude of r(41) of crystals that have a same cation will increase suddenly when the value of r(beta) becomes larger. (C) 1997 Academic Press.
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A theoretical method has been set up to calculate the electrooptic tensor coefficients r(ijk), based on the Phillips-Van Vechten (PV) dielectric theory and the Levine bond charge model, Starting from the crystal structure data and only introducing the experimentally determined optical permittivity and dielectric constant, the electro-optic tensor coefficients r(ijk) can be quantitatively predicted, The theoretical calculations are in good agreement with experiment in the case of zinc blende and wurtzite crystals, For zinc blende crystals, the effects of covalent radii on the linear electro-optic coefficients are discussed. (C) 1997 Academic Press.
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分析了在垂直LiNbO3晶体光轴方向加电压,光沿近光轴方向传播时,入射光偏振方向对电光调制器的影响。通过计算加电场后双折射光程差的变化和偏光振动方向的转动,画出在正交偏振镜下不同起偏方向的锥光干涉图,得到干涉图随起偏方向变化的规律:由偏光振动方向转动引起的消光区域随起偏方向的转动而转动,在起偏和检偏方向上始终消光,在与起偏方向成±45°角方向始终全透光,并且消光线的交点即感应双光轴头不随起偏方向的转动而变化,始终在折射率变大的感应主轴上。
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提出了一种新型的基于电光调制的激光光谱整形方案,该整形技术可以减轻啁啾脉冲放大系统中的增益窄化效应。傅立叶变换限的宽带种子激光脉冲通过光学展宽器线性展宽后,耦合到加载有整形电脉冲的集成波导调制器中进行整形,整形电脉冲由孔径耦合带状线电脉冲发生器产生。由于线性啁啾脉冲时间-频率的直接对应关系,在时域内对宽带种子激光脉冲整形,其光谱也得到了同样形状的整形。模拟了整形光谱形状,相应的整形电脉冲波形,分析了该整形技术的光谱整形分辨率,以及整形过程中引入的相位畸变。
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The general formulation of double refraction or internal double reflection for any directions of incidence and arbitrary orientation of the optic axis in a uniaxial crystal is analysed in terms of Huygens' principle. Then double refraction and double reflection along the sequential interfaces in a crystal are discussed. On this basis, if the parameters of the interface are chosen appropriately, the range of angular separation between the ordinary ray and extraordinary ray can be much greater, It is useful for crystal element design. Finally, as an example, an optimum design of the Output end interface for a 2 x 2 electro-optic switch is given.
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In this paper is described a novel technique for producing an electro-optical intensity synthesizer which can generate different periodic time domain waveforms through only sine or cosine wave applied-voltages. The synthesizer presented here consists of a series of stages between two polarizers, with each stage consisting of an electro-optic element and a compensator. Every electro-optical element has the same applied-voltage function but different azimuth angles and ratios between the longitudinal and transverse lengths. The main principle is the synthesis of an electro-optic effect and a polarization interference effect in the time domain. This technique is based on an expanded Fourier positive-direction searching algorithm, which can not only simplify the calculation process but also produces many choices of structural parameters for different waveforms generation. A three-stage synthesis of an electro-optical birefringent system for continuous square waveform is undertaken to prove the principle.
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基于掺镧锆钛酸铅(PLZT)电光陶瓷材料的光学特性,提出了一种具有上下电极结构的光学相控阵高速光束扫描器。在理论上,分析了具有这种结构的光学相控阵的光束电光偏转特性和机制;在实验上,分析了掺镧锆钛酸铅材料的相位调制特性和损耗特性,制作了相关的光学相控阵器件,并构建了相应的测试系统,获得了光束在空间的角度偏转,与理论分析结果相符。
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用数值方法研究了激光驱动器系统中使用光谱色散平滑单元后光束的衍射特性、模拟结果表明,光谱色散会使光束衍射光斑变大,近场空间强度均匀性改善,而远场光斑内部存在光强接近于均匀分布的区域.进一步分析了光谱色散平滑单元中相位调制器的调制深度、调制频率及光栅色散系数等主要元件参数对光束传输特性的影响,发现在一定情况下光斑内部会出现较强的强度调制。
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The high glass transition temperature polymer polyetherketone doped with disperse red 13 (DR13/PEK-c) has been prepared by the spin-coating method. Through in situ second-harmonic generation, the corona poling temperature was optimized by measuring the temperature dependence of the in situ second-harmonic generation signal intensity under the poling electric field. The linear electro-optic coefficients of the poled polymer films have been determined at 632.8 nm by using a simple interferometric technique. The polymer system was measured after 13 000 h, and found that it remained at 80% of its initial value.