294 resultados para dye doped waveguide


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A kind of optical pH sensor was demonstrated that is based on a pH-sensitive fluorescence dye-doped (eosin) cellulose acetate (CA) thin-film modified microstructured polymer optical fiber (MPOF). It was obtained by directly inhaling an eosin-CA-acetic acid mixed solution into array holes in a MPOF and then removing the solvent (acetic acid). The sensing film showed different fluorescence intensities to different pH solutions in a pH range of 2.5-4.5. Furthermore, the pH response range could be tailored through doping a surfactant, hexadecyl trimethyl ammonium bromide (CTAB), in the sensing film. (c) 2007 Optical Society of America.

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自20世纪60年代发展到现在,激光技术发展的速度十分惊人,应用的范围不断拓展,近年来随着有机/聚合物电致发光材料在有机发光二极管上的应用以及有机晶体管和有机太阳能电池的研制成功,科学家们开始了有机/聚合物材料放大自发发射和激光发射行为的研究。到目前为止,已经开发出了这种廉价、可以大面积成膜的、具有更广泛应用范围的有机/聚合物固体激光材料及光泵浦激光器。有机/聚合物激光器的出现不仅向传统激光理论提出了新的挑战,而且具有诸多潜在的应用价值。可以断言,在21世纪知识经济的大潮中,有机/聚合物激光器的研究必将推动传统学科的发展和新兴学科形成,也必将为人类带来巨大的经济效益。新的有机激光材料不断涌现、器件结构不断推陈出新、新的激发原理不断提出并得到修正已经成为有机/聚合物固体激光研究领域的三大特点。本论文进行了利用Förster能量传递对荧光染料DCJTB放大自发发射行为的优化、基于放大自发发射的红光染料DCJTB掺杂聚合物薄膜的白光发射、多孔结构对荧光染料放大自发发射行为的优化以及基于纳米结构的荧光染料DCJTB掺杂聚合物薄膜的激光行为等方面的研究工作,具体研究内容如下: 1、利用Förster能量传递理论,系统地研究了两种或三种染料共掺杂聚合物薄膜的放大自发发射(ASE)行为。研究表明,两种染料共掺杂显著改善了掺杂聚合物薄膜的ASE阈值、增益和损耗特性,而三种染料共掺杂,由于更多的Förster能量传递,使掺杂聚合物薄膜的ASE阈值、增益和损耗性能得到了进一步的改善。将Alq3和C545T两种绿光染料同时掺杂到DCJTB:PS中,通过利用Alq3和C545T同时的能量传递效应,已经使Alq3:C545T:DCJTB:PS薄膜的阈值、增益和损耗分别达到了0.007 mJ/pulse、52 cm-1和7 cm-1。 2、将红色荧光染料DCJTB掺杂到蓝色聚合物PFO中,通过控制DCJTB在PFO中的浓度,我们获得了具有放大自发发射的白光发射,当DCJTB在PFO的掺杂浓度为0.3%时显示了最好的白光ASE特性, 白光中DCJTB和PFO发射的阈值、增益和损耗分别达到了0.072 mJ pulse-1,0.035 mJ pulse-1;36.3 cm-1,22.35 cm-1和7.39 cm-1,15.88 cm-1。我们的结果表明,DCJTB掺杂聚合物PFO体系是实现ASE白光发射的有效方法,拓展了ASE的应用范围。 3、开发出了二维多孔SBA-15和三维TiO2反蛋白石光子晶体两种实现有机ASE有效发射的两种结构,通过利用有序结构的SBA-15的量子限域效应优化了蓝光染料C151的ASE阈值、增益和损耗特性,而通过利用三维TiO2反蛋白石光子晶体的量子限域效应,也使包埋其中的绿光染料C545T的ASE特性得到了明显改善。研究表明,无论是二维SBA-15多孔结构还是三维TiO2反蛋白石光子晶体结构,通过其量子限域效应都能很好地优化包埋其中的荧光染料的ASE特性,为进一步优化有机半导体的ASE特性提供了新的思路。 4、将聚苯乙烯纳米球分散到DCJTB:PS薄膜中和把DCJTB:PS薄膜旋涂在ZnO纳米柱阵列上两种方法,我们已经成功地研制出了多模随机有机激光发射器件。详细研究表明,多模随机有机激光发射特性显著地与聚苯乙烯纳米球的尺寸和浓度以及ZnO纳米柱的疏密程度密切相关,优化后的聚苯乙烯纳米球掺杂DCJTB:PS薄膜的阈值已经达到了0.06 mJ pulse-1cm-2,而ZnO纳米柱包埋DCJTB:PS薄膜的阈值达到了0.375 mJ pulse-1cm-2。我们的结果表明,聚苯乙烯纳米球和ZnO纳米柱都是实现随机有机激光的非常好的散射介质材料。

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We studied the memory effect in the devices consisting of dye-doped N, N'-di(naphthalene-1-yl)-N, N'-diphenyl-benzidine sandwiched between indium-tin oxide and Ag electrodes. It was found that the on/off current ratio was greatly improved by the doped fluorescent dyes compared with nondoping devices. A mechanism of charge trapping was demonstrated to explain the improvement of the memory effect. For the off state, the conduction process is dominated by the trapping current, which is a characteristic of the space-charge limited current, whereas the on state is dominated by the detrapping current, and interpreted by Poole-Frenkel emission.

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The zirconia-titania-ORMOSIL waveguide thin films with considerable optical quality were prepared by the sol-gel process. The refractive index (n) and the extinction coefficient (k) were determined by a scanning ellipsometer. Wavelength tunable output of distributed feedback waveguide lasing was demonstrated in Rhodamine 6G doped ZrO2 TiO2-ORMOSIL thin films by varying the temperature, and about 5.5 nm wavelength tuning range was achieved around the emission wavelength of 599 nm. The thermal-optic coefficient (dn/dT) of the active ZrO2-TiO2-ORMOSIL films was deduced. (c) 2005 Elsevier B.V. All rights reserved.

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This paper reports on the fabrication and characterization of a ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass. The He+ ion implantation (at energy of 2.8 MeV) is first applied onto the sample to produce a planar waveguide substrate, and then Ar+ ion beam etching (at energy of 500 eV) is carried out to construct rib stripes on the sample surface that has been deposited by a specially designed photoresist mask. According to a reconstructed refractive index profile of the waveguide cross section, the modal distribution of the waveguide is simulated by applying a computer code based on the beam propagation method, which shows reasonable agreement with the experimentally observed waveguide mode by using the end-face coupling method. Simulation of the incident He ions at 2.8 MeV penetrating into the Er3+/Yb3+ co-doped phosphate glass substrate is also performed to provide helpful information on waveguide formation.

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Low loss index enhanced planar waveguides in Nd3+-doped silicate glass were fabricated by 3.0 MeV C+ ion implantation. The enhancement of the refractive index confined the light propagating in the waveguide. The prism-coupling method was used to measure dark modes in the waveguide. The effective refractive indices of the waveguide were obtained based on the dark modes. The moving fiber method was applied to measure the waveguide propagation loss. Loss measured in non-annealed samples is about 0.6 dB/cm. And the waveguide mode optical near-field output at 633 nm was presented. (c) 2005 Elsevier B.V. All rights reserved.

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Er^(3+)-doped Na2O-WO3-TeO2 glass consistent with standard ion-exchange technology has been fabricated and characterized. The measured absorption and emission spectra of the glass were analyzed by the Judd-Ofelt and McCumber theories. The intensity parameters are Ω2 = 7.01

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A waveguide amplifier is fabricated by Ag+-Na+ two-step ion exchange on Er/Yb-doped phosphate glass. The spectroscopic performance of glass and the properties of channel waveguide are characterized. A double-pass configuration is adopted to measure the gain and noise figure (NF) of the waveguide amplifier, and the comparison of gain and NF for the single and double-pass configuration of the waveguide amplifier is presented. The results show that the double-pass configuration can make the gain increase from 8.8dB (net gain 2.2dB/cm) of the single-pass one to 14.6 dB (net gain 3.65 dB/cm) for small input power at 1534 nm, and the NF are all lower than 5.5dB for both the configurations.

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Random multimode lasers are achieved in 4-(dicyanomethylene)-2-tert-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) doped polystyrene thin films by introducing silicon dioxide (SiO2) nanoparticles as scatterers. The devices emit a resonance multimode peak at a center wavelength of 640 nm with a mode linewidth less than 0.87 nm. The threshold excitation intensity is as low as 0.25 mJ pulse(-1) cm(-2). It can be seen that the microscopic random resonance cavities can be formed by multiple scattering of SiO2 nanoparticles.

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The effects of the concentration of 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H, 5H, 11H-(1)-benzopyropyrano(6, 78-i,j)quinolizin-11-one (C545T) as dopant in polyfluorene (PFO) on the charge-carrier transport and electroluminescence (EL) performance were investigated by steady-state and transient EL measurements. A fully green emission from C545T was observed and the EL performance depends strongly on the C545T concentration. The mobility in the C545T-doped PFO film was determined by transient EL. The dopant concentration dependence of the current-voltage relationship indicated clearly the carrier trapping by the C545T molecules. The mobility in C545T:PFO changed significantly with the C545T concentration, and showed a nontrivial dependence on the doping level. The behavior may be understood in terms of the formation of an additional energy disorder due to potential fluctuation caused by the Coulomb interaction of the randomly distributed doping molecules.

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The effects of doped fluorescent dye 4-(dicyanomethylene)-2-i-propyl-6-(1, 1, 7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTI) on the charge carrier injection, transport and electroluminescence (EL) performance in polyfluorene (PFO)-based polymer light-emitting diodes (PLEDs) were investigated by steady-state current-voltage (I-V) characteristics and transient EL measurements. A red EL from DCJTI was observed and the EL performance depended strongly on the DCJTI concentration. The analysis of the steady-state I-V characteristics at different DCJTI concentrations found that three regions was shown in the I-V characteristics, and each region was controlled by different processes depending on the applied electric field. The effect of the dopant concentration on the potential-barrier height of the interface is estimated using the Fowler-Nordheim model. The dopant concentration dependence of the current-voltage relationship indicated clearly the carrier trapping by the DCJTI molecules. The mobility in DCJTI: PFO changed significantly with the DCJTI concentration, and showed a nontrivial dependence on the doping level. The behavior may be understood in terms of the formation of an additional energy disorder due to potential fluctuation caused by the Coulomb interaction of the randomly distributed doping molecules.

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The effect of the concentration of 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as dopant in tris(8-quinolinolato) aluminum (Alq(3)) on the charge carrier transport in Alq(3):DCJTB was investigated by measuring the steady current-voltage characteristics and the transient electroluminescence. The dopant concentration dependence of the current-voltage relationship clearly indicates the carrier trapping by the DCJTB molecule. The DCJTB concentration significantly affects the electron mobility in Alq(3):DCJTB. The mobility has a nontrivial dependence on the doping level. For relatively low doping levels, less than 1%, the electron mobility of Alq(3):DCJTB decreases with the doping level. An increasing mobility is then observed if the dopant concentration is further increased, followed by a decrease for doping levels larger than similar to2%. The change of the electron mobility with the DCJTB concentration in Alq(3) is attributed to the additional energetic disorder due to potential fluctuations caused by the dipole-dipole interaction of random distribution dopant at the relatively low doping concentration, and to the phase separation at the high doping concentration.

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Bright blue electroluminescent devices have been fabricated using poly (N-vinylcarbazole) (PVK) doped with perylene as the emissive layer, poly(p-phenylenevinylene) (PPV) as the hole-transporting layer, 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), tris(8-hydroxyquinoline)aluminum (Alq(3)) as the electron-transporting layer, and Al as the cathode. A luminance of 700 cd/m(2) and a luminescent efficiency of 0.8% are achieved at a drive voltage of 36 V. In the experiment, it is found that the introduction of electron-transporting layer PBD has a great effect on the emissive color of the electroluminescent devices prepared by PVK doped with perylene. Yellow-green emission is observed from the device structure of glass substrate/indium-tin-oxide/PVK:perylene/Al. The possible emissive mechanisms are given. The effect of the transporting layer on the electroluminescence is also discussed. (C) 1997 Elsevier Science S.A.

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We report on the fabrication and characterization of low-loss planar and stripe waveguides in a Nd3+-doped glass by 6 MeV oxygen-ion implantation at a dose of 1x10(15) ions/cm(2). The dark mode spectroscopy of the planar waveguide was measured using a prism coupling arrangement. The refractive index profile of the planar waveguide was reconstructed from a code based on the reflectivity calculation method. The results indicate that a refractive index enhanced region as well as an optical barrier have been created after the ion beam processing. The near-field mode profiles of the stripe waveguide were obtained by an end-fire coupling arrangement, by which three quasitransverse electric modes were observed. After annealing, the propagation losses of the planar and stripe waveguides were reduced to be similar to 0.5 and similar to 1.8 dB/cm, respectively. (c) 2007 American Institute of Physics.

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TiO2/ormosil films doped with laser dyes have been prepared by the sol-gel method. Spectroscopic properties of the entrapped dyes are studied by the absorption and emission techniques. The results indicate that the absorption and fluorescence spectra of kiton red depend strongly on the properties of the ormosil matrices. The heat-treatment of the kiton red-doped film obviously leads to the increasing fluorescence intensity and the largest fluorescence intensity is obtained after heat-treatment of 150 degrees C for 2 h. However, the fluorescence intensity of the rhodamine 6G-doped film decreases with the increase of the heat-treatment temperature. (c) 2005 Elsevier B.V. All rights reserved.