Novel Bi-doped glasses for broadband optical amplification

Broadband infrared luminescence is observed in various Bi-doped oxide glasses prepared by conventional melting-quenching technique. The absorption spectrum of the Bi-doped germanium oxide glass consists of five broad peaks at below 370, 500, 700, 800 and 1000 nm. The fluorescence spectrum exhibits a broad peak at about 1300 nm with full width at half maximum (FWHM) of more than 300 nm when excited by an 808 nm laser diode. The fluorescence lifetime at room temperature decreases with increasing Bi2O3 concentration. Influence of the glass composition and melting atmosphere on the fluorescence lifetime and luminescent intensity is investigated. The mechanism of the broadband infrared luminescence is suggested. The product of stimulated emission cross-section and lifetime of the Bi-doped aluminophosphate glass is about 5.0 X 10(-24) cm(2) s. The glasses might be promising for applications in broadband optical fiber amplifiers and tunable lasers. (c) 2007 Elsevier B.V. All rights reserved.

Effect of air annealing on the spectral properties of Ce : Y3Al5O12 single crystals grown by the temperature gradient technique

Five absorption hands, at 227, 300 340, 370 and 457nm, were observed in the optical absorption spectrum of Ce:Y3Al5O12 (Ce:YAG) crystals grown by the temperature gradient technique (TGT). The absorption bands at 227, 340, and 457 nm were identified Lis belonging to the Ce3+ -ion in the YAG crystal. A near UV optical emission band at 398nm was observed. with an excitation spectrum containing two bands, at 235 and 370nm. No fluorescence was detected under 300 nm excitation. The pair of absorption bands at 235 and 370 nm and the absorption band at 300 nm were attributed to the F- and F+-type color centers, respectively. The color centers model was also applied to explain the spectral changes in the Ce:YAG (TGT) crystal, including the reduction in the Ce 31 -ion absorption intensity, after annealing in an oxidizing atmosphere (air). (C) 2004 Elsevier B.V. All rights reserved.

Characteristics and optical spectra of V : YAG crystal grown in reducing atmosphere

A V:YAG single crystal was grown by the temperature gradient technique (TGT) with graphite-heating elements. The as-grown crystal has different colorations of light green and yellow brown in different parts. Distribution of vanadium in three samples with different colorations was determined by inductively coupled plasma-mass spectrometry. From the absorption spectrum of the yellow-brown part with peaks at 370, 820 and 1320nm, we can deduce that the reducing atmosphere of carbon diffused from the heating elements can increase the concentration of tetrahedral V3+ ions and induce F color centers. All three samples exhibited light-green color after annealing in vacuum or H-2 atmospheres. In the vacuum annealing process, the V3+ ions in tetrahedral positions were enhanced through two methods: one method is the exchanging of octahedral V3+ and tetrahedral Al3+ ions in neighboring sites under thermal excitation, the other is that F color centers were thoroughly eliminated and the escaped free electrons could be captured by V ions with higher valance states to further improve the concentration of tetrahedral V3+ ions. Besides the two mechanisms, the H-2 annealing process greatly improved the V-tetra(3+) ions through the reduction effect of H-2. (c) 2006 Elsevier B.V. All rights reserved.

Color centers and charge state change in Ce : YAG crystals grown by temperature gradient techniques

Color centers and impurity defects of Ce:YAG crystals grown in reduction atmosphere by temperature gradient techniques have been investigated by means of gamma irradiation and thermal treatments. Four absorption bands associated with color centers or impurity defects at 235, 255, 294 and 370 nm were observed in as-grown crystals. Changes in optical intensity of the 235 and 370 nm bands after gamma irradiation indicate that they are associated with F+-type color center. Charge state change processes of Fe3+ impurity and Ce3+ ions take place in the irradiation process. The variations of Ce3+ ions concentration clearly indicate that Ce4+ ions exist in Ce:YAG crystals and gamma irradiations could increase the concentration of Ce3+ ions. Annealing treatments and the changes in optical density suggest that a heterovalent impurity ion associated with the 294 nm band seems to be present in the crystals. (c) 2005 Elsevier B.V. All rights reserved.

Yb∶Y3Al5O12晶体晶格振动光谱的研究

采用提拉法生长Y3Al5O12(YAG)晶体和Yb3+掺杂原子数分数分别为5%, 10%, 15%, 20%, 25%, 50%和100%的Yb∶Y3Al5O12(Yb∶YAG)晶体。系统表征和分析了Yb3+掺杂浓度对拉曼光谱的影响。随着Yb3+掺杂浓度的增加,晶体的振动模式没有明显的变化,晶体结构没有改变;在370 cm-1和785 cm-1附近,振动吸收峰的半峰全宽逐渐增大。分析得出,Yb3+掺杂浓度对晶体的晶格、对称性、荧光寿命均有影响,从而可能影响到晶体的光谱和激光性能。

β-Ga2O3：Cr单晶体的浮区法生长及光学特性

利用浮区法生长得到β-Ga2O3：Cr单晶体．在室温下测试了β-Ga2O3：Cr单晶体的吸收光谱和发射光谱．通过吸收光谱计算了晶体场分裂系数Dq和Racah系数，得到10Dq/B=23．14，表明Cr^3＋在β-Ga2O3晶体中处于较弱的晶体场β-Ga2O3：Cr单晶体经高温退火后Cr^3＋的发射明显加强，而绿光的发射减弱．采用420nm波长激发，在691nm可得到强而宽的特征发射，此发射对应于Cr^3＋的^4T2→^4A2跃迁．

中国晚泥盆世两种木本石松植物的研究

木本石松植物在晚古生代植物群中一直引人注目，它们是最早在中、晚泥盆世发展乔木和异孢习性的陆生维管植物谱系之一。在这篇报告中，中国两种晚泥盆世（距今约354-370百万年）的木本石松植物被详细地研究了。这两项研究增进了我们对泥盆纪木本石松植物的进化发育生物学的认识。 作者从中国西北部新疆准噶尔盆地上泥盆统的地层中描述了一个新种新疆鳞孢穗Lepidostrobus xinjiangensis sp.nov.，它为我们研究晚泥盆世石松植物的生殖分化和系统发育关系提供了新的认识。这个孢子叶球不同于任何草本石松植物的生殖器官，而与木本石松植物的生殖器官更为相似，它符合鳞孢穗属Lepidostrobus的鉴别性状。它的每个孢子叶由一个楔形的叶柄和一个三角形的叶片构成。孢子叶水平地着生在穗轴上，呈低角度的螺旋排列。叶柄具有侧翼和一个远轴面的脊，其远端延伸为一个上翻的叶片和一个下翻的踵，形成了一种盾状的外貌。孢子囊呈辐向加长、背腹扁的卵球形，具有顶端的纵向开裂。每个孢子囊基部纵向着生在叶柄的近轴面上。在孢子囊中发现了一个柱状的亚孢原组织垫。一个可能的叶舌出现在叶柄近轴面靠孢子囊远端。这个生殖器官是一个小孢子叶球，含石松孢Lycospora型孢子，具有粒状纹饰和赤道凸缘。基于这个鳞孢穗新种，木本石松植物从泥盆纪到石炭纪以来的生殖分化和演化式样在一个系统发育的框架中被讨论了。作者提出，木本石松植物由两性孢子叶球和单孢子叶球所代表的生殖策略到了晚泥盆世已经发展得相当完备，这暗示着系统发育上生有鳞孢穗孢子叶球的木本石松植物比过去所认为得起源要早。 作者重新调查了一个过去描述于中国湖北晚泥盆世（弗拉斯期）黄家磴组地层中的斜方薄皮木Leptophloeum thombicum的树干，并提出关于这个木本石松植物生长结构的新观点。这个树干保存为压扁的硅化化石，具有不均匀渗矿化的初生维管组织和螺旋排列的斜方形叶座。叶座特征符合晚泥盆世广泛分布的植物斜方薄皮木Leptophloeum rhombicum Dawson的鉴别性状。分类上，斜方薄皮木被归入薄皮木科Leptophloeaceae和广义水韭目Isoetales s.l.。这个树干在不同水平的解剖特征证明，斜方薄皮木的个体发育可能符合一种有限的生长方式。结合过去的资料和当前的生长结构分析，作者提出斜方薄皮木具有假单轴分枝的习性，而不是过去所认为的那样长着等二叉分枝的树冠。作者重新复原了这个植物的总体生长形态，它由一个根座式根状茎、一个主干和侧枝三类主要的生长结构单元构成。当这些结果组合了近期的系统发育工作后，它表明斜方薄皮木已经发育了与一些晚泥盆世法门期和石炭纪木本石松植物相似的生长结构，可能代表了早期水韭目植物祖先的生长结构类型之一。