316 resultados para avalanche ionization


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Interactions of oblique incident probe wave with oncoming ionization fronts have been investigated using moving boundary conditions. Field conversion coefficients of reflection, transmission and magnetic modes produced in the interactions are derived. Phase matching conditions at the front and frequency up-shifting formulas for the three modes are also presented.

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High-order harmonics and single attosecond pulse generation by using an infrared laser pulse combined with attosecond pulse trains (APT) interacting with He+ have been investigated. We show that the ionization for different instant time intervals can be controlled by altering the time delay between the APT and the infrared pulse. Consequently, APT can be used as a tool to control the efficiency of high-order harmonics emitted at different times. By choosing appropriate APT and time delay, the driving pulse width for single attosecond pulse generation can be extended up to six optical cycles. (c) 2007 Optical Society of America.

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The single ionization of an He atom by intense linearly polarized laser field in the tunneling regime is studied by S- matrix theory. When only the first term of the expansion of the S matrix is considered and time, spatial distribution, and fluctuation of the laser pulse are taken into account, the obtained momentum distribution in the polarization direction of laser field is consistent with the semiclassical calculation, which only considers tunneling and the interaction between the free electron and external field. When the second term, which includes the interaction between the core and the free electron, is considered, the momentum distribution shows a complex multipeak structure with the central minimum and the positions of some peaks are independent of the intensity in some intensity regime, which is consistent with the recent experimental result. Based on our analysis, we found that the structures observed in the momentum distribution of an He atom are attributed to the " soft" collision of the tunneled electron with the core.

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Visible-blind p-i-n avalanche photodiodes (APDs) were fabricated with high-quality GaN epilayers deposited on c-plane sapphire substrates by metal-organic chemical vapour deposition. Due to low dislocation density and a sophisticated device fabrication process, the dark current was as small as similar to 0.05 nA under reverse bias up to 20V for devices with a large diameter of 200 mu m, which was among the largest device area for GaN-based p-i-n APDs yet reported. When the reverse bias exceeded 38V the dark current increased sharply, exhibiting a bulk avalanche field-dominated stable breakdown without microplasma formation or sidewall breakdown. With ultraviolet illumination (360 nm) an avalanche multiplication gain of 57 was achieved.