29 resultados para aluminum casthouse metal flow


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We report on an optical interference method to fabricate arrayed holes on metal nickel foil and aluminum film deposited on glass substrate by means of five-beam interference of femtosecond laser pulses. Optical microscope and scanning electron microscope observations revealed that arrayed holes of micrometre-order were fabricated on both metal foil and metal film. The present technique allows one-step, large-area, micrometric processing of metal materials for potential industrial applications.

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InGaN/GaN multiple quantum wells (MQWs) are grown by metal-organic chemical vapour deposition on (0001) sapphire substrates. Triple-axis X-ray diffraction (TXRD) and photoluminescence (PL) spectra are used to assess the influence of trimethylgallium (TMGa) flow on structural defects, such as dislocations and interface roughness, and the optical properties of the MQWs. In this paper, a method, involving an ! scan of every satellite peak of TXRD, is presented to measure the mean dislocation density of InGaN/GaN MQWs. The experimental results show that under certain conditions which keep the trimethlyindium flow constant, dislocation density and interface roughness decrease with the increase of TMGa flow, which will improve the PL properties. It can be concluded that dislocations, especially edge dislocations, act as nonradiative recombination centres in InGaN/GaN MQWs. Also noticed is that changing the TMGa flow has more influence on edge dislocations than screw dislocations.

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The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or diborane (B2H6) as the dopants. The incorporations of Al and B atoms and their memory effects and the electrical properties of p-type 4H-SiC epilayers were characterized by secondary ion mass spectroscopy (SIMS) and Hall effect measurements, respectively. Both Al- and B-doped 4H-SiC epilayers were p-type conduction. It was shown that the profiles of the incorporated boron and aluminum concentration were in agreement with the designed TMA and B2H6 flow rate diagrams. The maximum hole concentration for the Al doped 4H-SiC was 3.52x10(20) cm(-3) with Hall mobility of about 1 cm(2)/Vs and resistivity of 1.6 similar to 2.2x10(-2) Omega cm. The heavily boron-doped 4H-SiC samples were also obtained with B2H6 gas flow rate of 5 sccm, yielding values of 0.328 Omega cm for resistivity, 5.3x10(18) cm(-3) for hole carrier concentration, and 7 cm(2)/VS for hole mobility. The doping efficiency of Al in SiC is larger than that of B. The memory effects of Al and B were investigated in undoped 4H-SiC by using SIMS measurement after a few run of doped 4H-SiC growth. It was clearly shown that the memory effect of Al is stronger than that of B. It is suggested that p-type 4H-SiC growth should be carried out in a separate reactor, especially for Al doping, in order to avoid the join contamination on the subsequent n-type growth. 4H-SiC PiN diodes were fabricated by using heavily B doped epilayers. Preliminary results of PiN diodes with blocking voltage of 300 V and forward voltage drop of 3.0 V were obtained.

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Single-crystal GaN films have been deposited on (01 (1) over bar 2) sapphire substrates using trimethylgallium (TMGa) and NH3 as sources. The morphological, crystalline, electrical and optical characterizations of GaN film are investigated. The carrier concentration ofundoped GaN increases with decreasing input NH3-to-TMGa molar flow ratio.

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In order to improve crystal quality for growth of quaternary InAlGaN, a series of InAlGaN films were grown on GaN buffer layer under different growth temperatures and carrier gases by low-pressure metal-organic vapor phase epitaxy. Energy dispersive spectroscopy (EDS) was employed to measure the chemical composition of the quaternary, high resolution X-ray diffraction (HRXRD) and photoluminescence (PL) technique were used to characterize structural and optical properties of the epilayers, respectively. The PL spectra of InAlGaN show with and without the broad-deep level emission when only N2 and a N2+H2 mixture were used as carrier gas, respectively. At pressure of 1.01×104 Pa and with mixed gases of nitrogen and hydrogen as carrier gas, different alloy compositions of the films were obtained by changing the growth temperature while keeping the fluxes of precursors of indium (In), aluminum (Al), gallium (Ga) and nitrogen (N2) constant. A combination of HRXRD and PL measurements enable us to explore the relative optimum growth parameters-growth temperature between 850℃ and 870℃,using mixed gas of N2+H2 as carrier gas.

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The chelates formed between the heavy metal ion Pb(II) and the reagents 8-hydroxy-5-quinolinesulphonic acid, 8-hydroxy-7-quinolinesulphonic acid and 8-hydroxy-7-iodo-5-quinolinesulphonic acid exhibit strong room temperature phosphorescence (RTP) if retained on the surface of anion exchange resin beads. Based on the on-line formation, in a flow-injection system, of such RTP lead chelates and their transient immobilization on an anion exchange resin, three flow-through optosensing systems are investigated for lead in sea water. Optimum experimental conditions and the analytical performance characteristics of the three optosensors are discussed. Relative standard deviations (RSDs) of the order of 3% are typical at 100 ng ml−1 Pb(II) and the active sensing phases can easily be regenerated by passing 500 μl of 6 M hydrochloric acid. A lead(II) detection limit of 0.1 ng ml−1 (3×background SD, for 2 ml sample injection volumes) was achieved for the optosensor based on 8-hydroxy-7-quinolinesulphonic acid. Possible interferences present in sea water, including cations and anions which could affect the sensor response, are discussed in detail. Finally, the selected RTP flow-through optical sensor has been successfully tested for the determination of lead in sea water at a few ng ml−1.

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A series of enolic Schiff base aluminum(III) complexes LAIR (where L = NNOO-tetradentate enolic Schiff base ligand) containing ligands that differ in their steric and electronic properties were synthesized. Their single crystals showed that these complexes are five -coordinated around the aluminum center. Their coordination geometries are between square pyramidal and trigonal bipyramidal. Their catalytic properties in the solution polymerization of racemic lactide (rac-LA) were examined. The modifications in the auxiliary ligand exhibited a dramatic influence on the catalytic performance.

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BACKGROUND: Thermodynamics and kinetics data are both important to explain the extraction property. In order to develop a novel separation technology superior to current extraction systems, many promising extractants have been developed including calixarene carboxylic acids. The extraction thermodynamics behavior of calix[4]arene carboxylic acids has been reported extensively. In this study, the mass transfer kinetics of neodymium(III) and the interfacial behavior of calix[4]arene carboxylic acid were investigated.

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A series of aluminum ethyls and isopropoxides based on a bis(pyrrolidene) Schiff base ligand framework has been prepared and characterized. NMR studies of the dissolved complexes indicate that they adopt a symmetric structure with a monomeric, five-coordinated aluminum center core. The aluminum ethyls used as catalysts in the presence of 2-propanol as initiator and the aluminum isopropoxides were applied for lactide polymerization in toluene to test their activities and stereoselectivities. All polymerizations are living, as evidenced by the narrow polydispersities and the good fit between calculated and found number-average molecular weights of the isolated polymers. All of these aluminum complexes polymerized (S,S)-lactide to highly isotactic PLA without epimerization of the monomer, furnished isotactic-biased polymer from rac-lactide, and gave atactic polymer from meso-lactide.

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We demonstrate extremely stable and highly efficient organic light-emitting diodes (OLEDs) based on molybdenum oxide (MoO3) as a buffer layer on indium tin oxide (ITO). The significant features of MoO3 as a buffer layer are that the OLEDs show low operational voltage, high electroluminescence (EL) efficiency and good stability in a wide range of MoO3 thickness. A green OLED with structure of ITO/MoO3/N,N-'-di(naphthalene-1-yl)-N,N-'-diphenyl-benzidene (NPB)/NPB: tris(8-hydroxyquinoline) aluminum (Alq(3)):10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H, 5H, 11H-(1)-benzopyropyrano(6,7-8-i,j)quinolizin-11-one (C545T)/Alq(3)/LiF/Al shows a long lifetime of over 50 000 h at 100 cd/m(2) initial luminance, and the power efficiency reaches 15 lm/W. The turn-on voltage is 2.4 V, and the operational voltage at 1000 cd/m(2) luminance is only 6.9 V. The significant enhancement of the EL performance is attributed to the improvement of hole injection and interface stability at anode.

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A series of aluminum ethyls and isopropoxides based upon N,N,O,O-tetradentate Schiff base ligand framework have been prepared. X-ray diffraction analysis and H-1 NMR confirmed that these Schiff base aluminum ethyls and isopropoxides were all monomeric species with a five-coordinated central aluminum in their solid structures. Compared to the aluminum ethyls which all retain their monomeric structure in the solution, the dinucleating phenomenons of aluminum isopropoxides with less steric hindered substituents in the solution have also been observed. The activities and stereoselectivities of these complexes toward the ring-opening polymerization of rac-lactide have been investigated. Polymerization experiments indicated that (SB-2d)(AlOPr)-Pr-i [(SB-2d) = 2,2-dimethyl-1,3-propylenebis(3,5-di-tert-butylsalicylideneiminato)] exhibited the highest stereoselectivity and (SB-3b)(AlOPr)-Pr-i [(SB-3b) = 2,2-dimethyl-1,3-propylenebis(3,5-dichlorinesalicylideneiminato)] possessed the highest activity among these aluminum isopropoxides. The substituents and the mode of the bridging part between the two nitrogen atoms both exerted significant influences upon the progress of the polymerizations, influencing either the tacticity of isolated polymers or the rate of polymerization.

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The interfacial tension is measured for Cyanex 302 in heptane and adsorption parameters are calculated according to Gibbs equation and Szyskowski isotherm. The results indicate that Cyanex 302 has a high interfacial activity, allowing easy extraction reaction to take place at the liquid-liquid interface. The extraction kinetics of yttrium(III) with Cyanex 302 in heptane are investigated by a constant interfacial cell with laminar flow. The effects of stirring rate, temperature and specific interfacial area on the extraction rate are discussed. The results suggest that the extraction kinetics is a mixed regime with film diffusion and an aqueous one-step chemical reaction proposed to be the rate-controlling step. Assuming the mass transfer process can be formally treated as a pseudo-first-order reversible reaction with respect to the metal cation, the rate equation for the extraction reaction of yttrium(III) with Cyanex 302 at pH <5 is obtained as follows:R-f = 10(-7.85)[Y(OH)(2)(+)]((a))[H(2)A(2)]((o))(1.00)[H+]((a))(-1.00)Diffusion parameters and rate constants are calculated through approximate solutions of the flux equation.

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Measurement of iron and manganese is very important in evaluating the quality of natural waters. We have constructed an automated Fe(II), total dissolved iron(TDI), Mn(II), and total dissolved manganese(TDM) analysis system for the quality control of underground drinking water by reverse flow injection analysis and chemiluminescence detection(rFIA-CL), The method is based on the measurement of the metal-catalyzed light emission from luminol oxidation by potassium periodate. The typical signal is a narrow peak, in which the height is proportional to light emitted and hence to the concentration of metal ions. The detection limits were 3 x 10(-6) mu g ml(-1) for Fe(II) and the linear range extents up to 1.0 x 10(-4) and 5 x 10(-6) mu g ml(-1) for Mn(II) cover a linear range to 1.0 x 10(-4) mu g ml(-1). This method was used for automated in-situ monitoring of total dissolved iron and total dissolved in underground water during water treatment. (C) 1997 Elsevier Science B.V.

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The catalytic activity, thermal stability and carbon deposition of various modified NiO/gamma-Al2O3 and unmodified NiO/gamma-Al2O3 catalysts were investigated with a flow reactor, XRD, TG and UVRRS analysis. The activity and selectivity of the NiO/gamma-Al2O3 catalyst showed little difference from those of the modified nickel-based catalysts. However, modification with alkali metal oxide (Li, Na, K) and rare earth metal oxide (La, Ce, Y, Sm) can improve the thermal stability of the NiO/gamma-Al2O3 and enhance its ability to suppress carbon deposition during the partial oxidation of ethane (POE). The carbon deposition contains graphite-like species that were detected by UVRRS. The nickel-based catalysts modified by alkali metal oxide and rare earth metal oxide have excellent catalytic activities (C2H6 conversion of similar to 100%, CO selectivity of similar to 94%, 7x 10(4) l/(kg h), 1123 K), good thermal stability and carbon-deposition resistance.