圆斑蝰蛇毒磷脂酶A_2蛋白活性表现和分子进化探讨及菜花烙铁头、烙铁头蛇毒中Jerdonase、TmF的研究

磷脂酶AZ（PLA2）是蛇毒中含量较为丰富的一类作用于梭酷键的酶。迄今为止，己有多种形式的PLA2从不同地域、不同种属的蛇毒中得以纯化并进行了较为系统的研究。其中，以VipoXin为代表的异二聚体形式PLA2较为引人注目，原因在于这种形式不同于此类蛋白家族中的诸多其它个体。目前，己经有许多关于此异二聚体PL凡生物学特性的报道，包括对此类形式存在原因、活性变化、结构表现、系统进化等方面的讨论。然而至今，这种以异二聚体形式存在的PLA2仅发现于几种蛙亚科（ViperinaeSubfamily）蛇种的蛇毒中，其中就包括我国台湾岛的圆斑蜂蛇台湾亚种（Doboiarusselliiformosensis），而蝮亚科（CrotaiinaeSubfamil）蛇种的蛇毒至今却没有此类报道。我国大陆西南端接壤东南亚，存在于云南、福建一带的圆斑蛙蛇隶属圆斑蛙蛇泰国亚种（Daboiarusselliisiamensis），那么这种蛇毒中是否也含有异二聚体形式的PLA2呢？本工作就此疑问对云南产圆斑蛙蛇泰国亚种（D.r.siamensis）蛇毒中的PLA2进行了研究，结果得到三个新的PLAZ，分别命名为DRS-PLA2-I、DRS-PLA2-II和DRS-PLA2-III。其中，DRS-PLA2-I的分子量为13864.06Da，理论pI为4.56，PLA2活性为12.35μmol/mg/min；DRS-PLA2-II的分子量为13635.99Da，理论pI为8.74，PLA2活性为8.76μmol／mg/min；DRS-PLA2-III的分子量为13619.80Da，理论厂为4.61，无PLA2活性。这三个蛋白酶N端的30个氨基酸残基恰好和三个阳性克隆的cDNA序列推导的蛋白序列吻合，结合已经报道的PLA2蛋白家族蛋白序列的保守性表现，我们可以断定它们之间存在对应关系。分子系统学分析表明DRS-PLA2-II和DRS-PLA2-III在进化关系上和蛙亚科的异二聚体PLA2关系较近，并且二者酶活性分别与异二聚体PLA2的Normalchain和Inhibitorchain相一致，只是没有发现类似Vipoxin形式的异二聚体结合蛋白。这些分析表明DRS-PLA2-nORS-PLA2-III类似圆斑蛙蛇台湾亚种（D.r.forlnos翻s沽）中的PV-4/RV-7，是PLA2异二聚体的一种特殊形式，在进化上滞后于VinOXin。另夕卜本工作还相继从云南产菜花烙铁头（Trimeresrusjerdonii）蛇毒和湖南产烙铁头（Trimeresurusmucrosquamatus）蛇毒中分离得到Jerdonase和TmF。前者为一个丝氨酸蛋白酶性质的、具有纤维蛋白原水解作用和激肤释放酶原水解作用双重活性表现的、高分子量的份五brinogenase，其活性表现可以被PMSF彻底抑制，而EDTA对此却没有影响。其它的几种抑制剂如大豆胰蛋白酶抑制剂、l-cysteine、DTT对Jerdonase的活性表现也有不同程度的影响。在Jerdonase的这些生化特性上中，分子量的大小和对纤维蛋白酶水解的特性这两方面有别于蛇毒中诸多其它来源的同类蛋白；后者T淤为一个舒缓激肚增强肤（BradykninPQtentiatingPePtide，BPP），电离质谱分析表明其分子量为1110.7Da。此小肚氨基酸序列为促进舒缓激肚（Bradki垃n，BK）诱导的豚鼠回肠纵行肌收缩的活力单位为（1.13±0.3）（m留L），T妊抑制血管紧张素转化酶（ACE）对BK水解的半数抑制剂量IC50为2μg。比较已报道的从Agkistrodon属和Bothrops属中纯化得到的BPP氨基酸序列发现：BPP的N端都是特征性的pGlu，C端为IIe-Pro-Pro，有高度的保守性。另外，TmF是Trimeresurus属中此类小肤的首次纯化。总之，本研究对国产的几种常见蛇毒中的几种常见蛋白多肤进行了一定程度的探讨和分析，和相同类别的其它蛋白、多肤比较可以看到，有许多相同的地方，也有许多不同的表现，研究结果为相应领域的深入研究提供资料和思路。

Abnormal photoabsorption in high resistance GaN epilayer

Unintentionally doped GaN epilayers are grown by the metalorganic chemical vapor deposition (MOCVD). Photovoltaic (PV) spectroscopy shows that there appears an abnormal photoabsorption in some undoped GaN films with high resistance. The peak energy of the absorption spectrum is smaller than the intrinsic energy band gap of GaN. This phenomenon may be related to exciton absorption. Then metal-semiconductor-metal (MSM) Schottky photodetectors are fabricated on these high resistance epilayers. The photo spectrum responses are different when the light individually irradiates each of the two electrodes with the photodetector which are differently biased. When the excitation light irradiates around the reverse biased Schottky junction, the responsivity is almost one order of magnitude larger than that around the forward biased junction. Furthermore, when the excitation light irradiates the reverse biased Schottky junction, the peak energy of the spectrum has a prominent red-shift compared with the peak energy of the spectrum measured with the excitation light irradiating the forward biased Schottky junction. The shift value is about 28 meV, and it is found to be insensitive to temperature. According to the analyses of the distribution of the electric field within the MSM device and the different dependences of the response on the electric field intensity between the free carriers and excitons, a reliable explanation for the different response among various areas is proposed.

The cost estimate for a novel cheap solar cell

The estimate for the lowest cost of SODL (silicon on defect layer) solar cell is made according to the price standard of present market. The estimate shows that the PV (photovoltaics) energy costs can be reduced from today's 25-30 cents/(kW h) to 7-8 cents/(kW h) which is comparable with the present cost of electricity generated by traditional energy sources such as fossil and petroleum fuels. The PV energy costs could be reduced to a value lower than 7-8 cents(kW h) by developing SODL technology. The SODL solar cell manufacture featuring simple processes is suitable to large scale automated assembly lines with high yield of large area cells. Some new ideas are suggested, favoring the further reduction in the cost of commercial solar cells.

A voltage-controlled tunable two-color infrared photodetector using GaAs/AlAs/GaAlAs and GaAs/GaAlAs stacked multiquantum wells

A voltage-controlled tunable two-color infrared detector with photovoltaic (PV) and photoconductive (PC) dual-mode operation at 3-5 mu m and 8-14 mu m using GaAs/AlAs/AlGaAs double barrier quantum wells (DBQWs) and bound-to-continuum GaAs/AlGaAs quantum wells is demonstrated. The photoresponse peak of the photovoltaic GaAs/AlAs/GaAlAs DBQWs is at 5.3 mu m, and that of the photoconductive GaAs/GaAlAs quantum wells is at 9.0 mu m. When the two-color detector is under a zero bias, the spectral response at 5.3 mu m is close to saturate and the peak detectivity at 80 K can reach 1.0X10(11) cmHz(1/2)/W, while the spectral photoresponsivity at 9.0 mu m is absolutely zero completely. When the external voltage of the two-color detector is changed to 2.0 V, the spectral photoresponsivity at 5.3 mu m becomes zero while the spectral photoresponsivity at 9.0 mu m increases comparable to that at 5.3 mu m under zero bias, and the peak detectivity (9.0 mu m) at 80 K can reach 1.5X10(10) cmHz(1/2)/W. Strictly speaking, this is a real bias-controlled tunable two-color infrared photodetector. We have proposed a model based on the PV and PC dual-mode operation of stacked two-color QWIPs and the effects of tunneling resonance with narrow energy width of photoexcited electrons in DBQWs, which can explain qualitatively the voltage-controlled tunable behavior of the photoresponse of the two-color infrared photodetector. (C) 1996 American Institute of Physics.

风光互补发电系统的优化设计（I）CAD设计方法

给出了一整套利用CAD进行风光互补发电系统优化设计的方法。为了精确确定系统每小时的运行状态，采用了更精确地表征组件特性及评估实际获得的风光资源的数学模型。为了寻找出以最小设备投资成本满足用户用电要求的系统配置，首先在风力发电机容量固定不变的前提下，计算了与该容量风力发电机匹配的不同容量的PV���阵和蓄电池所组成的风／光／蓄组合的全年功率供给亏欠率LPSP，根据总的设备投资成本最小化的原则筛选出一组与该容量风力发电机对应的满足用户给定系统供电可靠性即LPSP值的风／光／蓄组合；然后通过改变风力发电机的容量，优选出多个与不同容量风力发电机对应的既能满足用户用电要求同时总的设备购置成本又是最低的风／光／蓄组合，比较它们的成本最终唯一确定出以最小投资成本满足用户用电要求的优化的系统配置。

Optical transitions in GaNAs/GaAs single quantum well

We have investigated GaNAs/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL), time-resolved PL (TRPL) and photovoltaic (PV) techniques. The low temperature PL is dominated by spatially direct transitions involving electrons confined in GaNAs well and holes localized in the same GaNAs layer. This assignment was supported by PL decay time measurements and absorption line-shape analysis derived from the PV measurements. By fitting the experimental data with a simple calculation, the band offset of the GaN0.015As0.985/GaAS heterostructure was estimated, and a type II band lineup in GaN0.015As0.985/GaAs QWs was suggested. Moreover, DeltaE(C), the discontinuity of conductor band, is found to be a nonlinear function of the nitrogen (N) composition (x), and the average variation of DeltaE(C) is about 0.110eV per %N, The measured band bowing coefficient shows a strong function of x, giving an experimental support to the theoretic calculation of Wei et al [Ref.2].

Photovoltage and luminescence study of stacked InAs/GaAs self-organized quantum dots

The ground and excited state excitonic transitions of stacked InAs self-organized quantum dots (QDs) in a laser diode structure are studied. The interband absorption transitions of QDs are investigated by non-destructive PV spectra, indicating that the strongest absorption is related to the excited states with a high density and coincides with the photon energy of lasing emission. The temperature and excitation (electric injection) intensity dependences of photoluminescence and electroluminescence indicate the influence of state filling effect on the luminescence of threefold stacked QDs. The results indicate that different coupling channels exist between electronic states in both vertical and lateral directions.

Structural and photoelectric studies on double barrier quantum well infrared detectors

GaAs/AlAs/GaAlAs double barrier quantum well (DBQW) structures are employed for making the 3 similar to 5 mu m photovoltaic infrared (IR) detectors with a peak detectivity of 5x10(11) cmHz(1/2)/W at 80K. The double crystal x-ray diffraction is combined with synchrotron radiation x-ray analysis to determine the exact thickness of GaAs, AlAs and GaAlAs sublayers. The interband photovoltaic (PV) spect ra of the DBQW sample and the spectral response of the IR photocurrent of the devices are measured directly by edge excitation method, providing the information about spatial separation processes of photogenerated carriers in the multiquantum wells and the distribution of built-in field in the active region.

A multi-moment finite volume formulation for shallow water equations on unstructured mesh

A novel and accurate finite volume method has been presented to solve the shallow water equations on unstructured grid in plane geometry. In addition to the volume integrated average (VIA moment) for each mesh cell, the point values (PV moment) defined on cell boundary are also treated as the model variables. The volume integrated average is updated via a finite volume formulation, and thus is numerically conserved, while the point value is computed by a point-wise Riemann solver. The cell-wise local interpolation reconstruction is built based on both the VIA and the PV moments, which results in a scheme of almost third order accuracy. Efforts have also been made to formulate the source term of the bottom topography in a way to balance the numerical flux function to satisfy the so-called C-property. The proposed numerical model is validated by numerical tests in comparison with other methods reported in the literature. (C) 2010 Elsevier Inc. All rights reserved.

长白山主要树种耐旱性的研究

研究表明，全球增温可导致干旱趋势的发展，为了解东北主要森林分布区长白山广大低海拔地区阔叶红松林主要组成树种对干旱趋势的反应，通过PV���线技术测定不同树种的水分参数值，比较评价其耐旱能力，得到长白山阔叶红松林主要树种耐旱性从高到低依次为：山杨、蒙古柞、樟子松、红松、长白松、黑桦、春榆、色木、糠椴、紫椴、红皮云杉、白桦、臭松、水曲柳、核桃楸、黄菠萝

绿洲前沿地区多枝柽柳水分关系的特征及灌溉的影响

对塔克拉玛干沙漠南缘策勒绿洲前沿地区多枝柽柳 (Tamarixramosissima)进行了研究 ,生长季节和灌溉前后水分关系的特征表明 :多枝柽柳在生长季节保持了较高较稳定的清晨水势 ,植物能够平衡白天水分损失造成的水分亏缺 ,水分恢复状况良好。环境气候变化对渗透势等水分参数的影响不及植物水分恢复状况对它们的影响。除了个别数据 ,多枝柽柳水势和渗透势的降低幅度很小 ,更像是生长过程的结果 ,植物水分胁迫的特征并不明显。对比水分生理上对干旱胁迫的适应———渗透势的迅速降低和质外体水含量的增加 ,膨压消失点相对含水量(RWCp)和渗透势差值 (ΔΠ)等参数显示的生理特征表明 ,植物更加依靠稳定充足的水分供应来适应生长环境中极端的高水压差和与此相应的高大气蒸发要求。与此适应 ,植物和地下水发生了联系 ,并且一次性灌溉对植物水分状况的恢复基本没有帮助 ,保持地下水位稳定在根系的可吸收范围内成为保护绿洲前沿多枝柽柳长期存在的关键。多枝柽柳的水分特征属于中生植物的范畴 ,对极端环境的适应属于躲避的类型。

塔干南缘骆驼刺植被水分关系的研究(英文)

对塔克拉玛干沙漠———绿洲过渡带骆驼刺 (AlhagisparsifoliaShap .)水分关系的研究表明 :骆驼刺在夏季保持了正的膨压 ,一直较高较稳定的清晨水势说明植物水分恢复状况良好 ,植物得到了较好的水分供应 ;在 7月 ,干旱胁迫造成的水分亏缺并未影响植株正常的蒸腾作用 ,因而干旱引起的水分胁迫并未威胁到植被的存在。骆驼刺对干旱胁迫的水分生理适应主要体现在叶水平上 ,表现为饱和枝条的渗透势 (Πo)和膨压消失点的渗透势 (Πp)的差值 (ΔΠ)和相对含水量 (RWC)在膨压消失点间更大的变化、渗透调节的产生、较高较稳定的饱和枝条水分与干物质之比 (WCsat)和膨压消失点的相对含水量 (RWCp) ,以及较低的共质体水在总水分中的相对含量 (RWCsym)。但形态学上的特征 ,主要表现为深而发达的根系和蒸腾面积的减少 ,才是骆驼刺适应极端干旱环境的主要途径。非定期的夏季一次性灌溉对地下水位很低地区的骆驼刺植被水分状况的恢复没有帮助。

Epitaxy-Assisted Creation of PCBM Nanocrystals and Its Application in Constructing Optimized Morphology for Bulk-Heterojunction Polymer Solar Cells

PCBM (a C-60 derivative) is so far the most successful electron acceptor for bulk-heterojunction polymer photovoltaic (PV) cells. Here we present a novel method epitaxy-assisted creation of PCBM nanocrystals and their homogeneous distribution in the matrix using freshly cleaved mica sheet as the substrate. The highly matched epitaxy relationship between the unit cell of PCBM crystal and crystallographic (001) surface of mica induces abundant PCBM nuclei, which subsequently develop into nanoscale crystals with homogeneous dispersion in the composite film.

Enhanced charge collection in polymer photovoltaic cells by using an ethanol-soluble conjugated polyfluorene as cathode buffer layer

We report enhanced polymer photovoltaic (PV) cells by utilizing ethanol-soluble conjugated poly (9, 9-bis (6'-diethoxylphosphorylhexyl) fluorene) (PF-EP) as a buffer layer between the active layer consisting of poly(3-hexylthiophene)/[6, 6]-phenyl C61-butyric acid methyl ester blend and the Al cathode. Compared to the control PV cell with Al cathode, the introduction of PF-EP effectively increases the shunt resistance and improves the photo-generated charge collection since the slightly thicker semi-conducting PF-EP layer may restrain the penetration of Al atoms into the active layer that may result in increased leakage current and quench photo-generated excitons. The power conversion efficiency is increased ca. 8% compared to the post-annealed cell with Al cathode.