Synthesis and characterizations of Al-doped Zn0.95Ni0.05O nanocrystals

Nanocrystalline Zn0.95-xNi0.05AlxO (x = 0.01, 0.02, 0.05 and 0.10) diluted magnetic semiconductors have been synthesized by an autocombustion method. X-ray absorption spectroscopy, high-resolution transmission electron microscopy, energy-dispersive spectrometry and Ni 2p core-level photoemission spectroscopy analyses revealed that some of the nickel ions were substituted for Zn2+ into the ZnO matrix while others gave birth to NiO nanoclusters embedded in the ZnO particles. The Zn0.95Ni0.05O sample showed no enhancement of room-temperature ferromagnetism after Al doping. (C) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Absence of room-temperature ferromagnetism in Al-codoped Zn0.95Co0.05O nanoparticles

Nanocrystalline Zn0.95-xCo0.05AlxO (x=0, 0.01, 0.05) diluted magnetic semiconductors have been synthesized by an auto-combustion method. X-ray diffraction measurements indicated that Al-doped Zn0.95Co0.05O samples had the pure wurtzite structure. X-ray absorption spectroscopy, high-resolution transmission electron microscope, energy dispersive spectrometer and Co 2p core-level photoemission spectroscope analyses indicated that Co2+ substituted for Zn2+ without forming any secondary phases or impurities. Resistance measurements showed that the resistance values of Co and Al codoped samples were still so large in the giga magnitude. Magnetic investigations showed that nanocrystalline Al-doped Zn0.95Co0.05O samples had no indication of room temperature ferromagnetism. (C) 2007 Elsevier B.V. All rights reserved.

细胞色素b6f蛋白复合体中叶绿素 a的性质和功能研究

细胞色素b6f蛋白复合体（Cytochrome b6f complex, Cyt b6f）是光合膜上参与光合作用原初反应过程的主要膜蛋白超分子复合体之一。莱茵衣藻和嗜热蓝细菌的Cyt b6f三维晶体结构均显示，每Cyt b6f单体分子含有1分子Chlorophyll a (Chl a )，充分肯定了Chl a 是Cyt b6f天然成分的观点(Kurisu et al，2003;Stroebel et al，2003)。研究表明不同来源的Cyt b6f中Chla单线激发态寿命(或荧光寿命)并不一样，多数的研究结果认为Cyt b6f中Chla单线激发态寿命只有200ps左右，但是也有Cyt b6f中Chla单线激发态寿命为～600ps的报道;而甲醇中游离Chl a 的单线激发态寿命为4ns左右。针对Cyt b6f中Chla单线激发态寿命快速淬灭的现象，Dashdorj 等(2005)根据晶体结构推测Cyt b6f中Chla单线激发态和邻近的Cyt b6亚基上Tyr105残基发生电子交换传递，从而快速淬灭Chla单线激发态，减少了三线态Chl a和单线态氧的产生，并且认为这是Cyt b6f保护自身不受单线态氧破坏的一种机制，但是这一推测缺乏有力的证据。另外，Cyt b6f中Chla的功能仍然未知。本文以菠菜Cyt b6f为对象，结合多种实验手段，测定了菠菜Cyt b6f中Chl a单线激发态寿命，并对复合体中Chl a 单线激发态淬灭的机理进行了深入研究。此外，我们还对复合体中Chl a 可能的功能进行了初步地探讨。获得了如下的结果： 1．针对不同来源的Cyt b6f中Chla单线激发态寿命（或荧光寿命）测定结果不同的报道，仔细分析了其中的原因，发现除了样品来源的差异外，使用不同的去垢剂可能是一个不可忽视的因素。在实验中，不同的研究者分别采用了十二烷基麦芽糖苷（n-Dodecyl β-D-maltoside，DDM，）和八烷基葡萄糖苷（n-Octyl β-D-glucopyranoside，β－OG)作为溶解样品的去垢剂。因此，本文借助稳态吸收和稳态荧光光谱、瞬态光散射技术，CD光谱和亚皮秒时间分辨吸收光谱等技术，分别研究了这两种去垢剂对Cyt b6f结构和功能的不同影响。结果表明，DDM去垢剂能使Cyt b6f处于较好的分散体系中，其中血红素和Chl a分子处于特定的蛋白环境中，不会导致Cyt b6f变性;而β－OG去垢剂会使Cyt b6f产生聚合现象，其中的血红素和Chl a与蛋白环境的相互作用减弱，和DDM相比其电子传递活性显著降低，Chl a单线激发态寿命延长，Chl a更容易被光破坏。通过这一工作，我们优化和确定了Cyt b6f的溶解条件，为下面的研究工作打下了良好的基础。 2．利用Tyr的特异性修饰剂p-Nitrobenzenesulfonyl Fluoride（NBSF）对Cyt b6f样品进行特性修饰，经原子吸收谱、荧光谱、CD谱、质谱等方法对修饰后的样品进行鉴定，并结合时间分辨飞秒吸收光谱技术，测得修饰后的样品在660nm激发下Chl a 单线激发态寿命延长，从而在实验上提供了Tyr与淬灭Chla单线激发态有关的证据。但是对Cyt b6f 中Chl a瞬态吸收图谱仔细研究表明，菠菜Cyt b6f 中Chl a单线激发态快速淬灭过程中并没有发现Tyr与Chl a 之间发生电子传递时所形成的Chla•¯。以上结果表明，Cyt b6f 中Chl a单线激发态快速的淬灭确实和邻近的Tyr105有关，但是与Dashdorj 等提出的Chla单线激发态和Tyr105残基发生了电子交换传递从而淬灭Chla单线激发态这一想法不符，关于这一问题值得进一步深入研究。 3．红光和绿光对Cyt b6f 照射，Cyt f可以被还原，并且红光比绿光更容易使Cyt f 还原，暗示Cyt f 的还原与Chl a 的关系密切，有可能是Chl a 被激发后，其被激发的电子传给Cyt f。对这一现象的进一步研究表明，Cyt b6f在光照条件下，Cyt f 的还原与体系内C10－PQ库的氧化还原状况相关，氧化型的C10－PQ可能介导电子从Chla传向Cyt f。由于在体内质体醌库的氧化还原状态往往决定Cyt b6f 的氧化还原状态，而通过对Cyt b6f不同氧化和还原状态的吸收谱和荧光谱的研究表明，氧化态和还原态的Cyt b6f 中，Chl a 与蛋白的结合状态是有差异的。这些差异可能暗示着Chl a 分子在行使其功能时与复合体的氧化还原状态是有关系的。通过以上的结果，对Cyt b6f中Chl a 可能的功能进行了假设。 4．此外，我们还发现Cyt b6f具有明显的过氧化物酶活性。在0.1 mmol/L乙酸钠缓冲液，pH3.6，25℃，[H2O2] <40mmol/L的条件下，其催化反应的速度常数为kobs＝26±1.2M•s-1;对H2O2的Km 值为50mmol/L，对guaiacol的Km 值为2mmol/L;反应的最适pH为3.6，最适离子强度为0.1，最适温度为35℃。推测Cyt b6f的这种过氧化物酶活性可能是在胁迫环境下使Cyt b6f中的血红素和Chl a 分子免受H2O2的破坏。

Annealing ambient controlled deep defect formation in InP

Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.

Influence of Mg content on molecular-beam-epitaxy-grown ZnMgS ultraviolet photodetectors

Zn1-xMgxS-based Schottky barrier ultraviolet (UV) photodetectors were fabricated using the molecular-beam-epitaxy (MBE) technique. The influence of Mg content on MBE-grown Zn1-xMgxS-based UV photodetectors has been investigated in details with a variety of experimental techniques, including photoresponse (PR), capacitance-voltage, deep level transient Fourier spectroscopy (DLTFS) and photoluminescence (PL). The room-temperature PR results show that the abrupt long-wavelength cutoffs covering 325, 305 295. and 270 nm with Mg contents of 16%, 44%, 57%, and 75% in the Zn1-xMgxS active layers, respectively, were achieved. But the responsivity and the external quantum efficiency exhibited a slight decrease with the Mg content increasing. In good agreement with the PR results, both of the integrated intensity of the PL spectra obtained from Zn1-xMgxS thin films with different Mg compositions (x = 31% and 52%, respectively) and the DLTFS spectra obtained from Zn1-xMgxS-based (x = 5% and 45%, respectively) UV photodetector samples clearly revealed a significant concentration increase of the non-radiative deep traps with increasing Mg containing in the ZnMgS active layers. Our experimental results also indicate that the MBE-grown ZnMgS-based photodetectors can offer the promising characteristics for the detection of short-wavelength UV radiation. (C) 2004 Elsevier B.V. All rights reserved.

Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers

Metal-semiconductor-metal (MSM) structures were fabricated by RF-plasma-assisted MBE using different buffer layer structures. One type of buffer structure consists of an AlN high-temperature buffer layer (HTBL) and a GaN intermediate temperature buffer layer (ITBL), another buffer structure consists of just a single A IN HTBL. Systematic measurements in the flicker noise and deep level transient Fourier spectroscopy (DLTFS) measurements were used to characterize the defect properties in the films. Both the noise and DLTFS measurements indicate improved properties for devices fabricated with the use of ITBL and is attributed to the relaxation of residue strain in the epitaxial layer during growth process. (C) 2003 Elsevier Ltd. All rights reserved.

Design and characteristics of quantum cascade laser-based CO detection system

National High Technology Research and Development Program of China 2007AA03Z112；Program of Ministry of Education of China 20060183030；Program of Jilin Provincial Science and Technology Department of China 20070709；Program of Bureau of Science and Technology of Changchun City 2007107

Microstructure characterization of transition films from amorphous to nanocrocrystalline silicon

Hydrogenated silicon (Si:H) films near the threshold of crystallinity were prepared by very high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) using a wide range of hydrogen dilution R-H = [H-2]/[SiH4] values of 2-100. The effects of H dilution R-H on the structural properties of the films were investigated using micro-Raman scattering and Fourier transform infrared (FTIR) absorption spectroscopy. The obtained Raman spectra show that the H dilution leads to improvements in the short-range order and the medium-range order of the amorphous network and then to the morphological transition from amorphous to crystalline states. The onset of this transition locates between R-H = 30 and 40 in our case, and with further increasing R-H from 40 to 100, the nanocrystalline volume fraction increases from similar to23% to 43%, and correspondingly the crystallite size enlarges from similar to2.8 to 4.4 nm. The FTIR spectra exhibit that with R-H increasing, the relative intensities of both the SiH stretching mode component at 2100 cm(-1) and wagging mode component at 620 cm(-1) increase in the same manner. We assert that these variations in IR spectra should be associated with the formation of paracrystalline structures in the low H dilution films and nanocrystalline structures in the high H dilution films. (C) 2003 Elsevier Science B.V. All rights reserved.

Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient

Isochronal thermal-annealing behavior of NTD floating-zone silicon grown in hydrogen ambient (called NTD FZ(H) Si) is presented. The dependencies of resistivity and carrier mobility on annealing temperature are determined by room-temperature Hall electrical measurements. Using infrared absorption spectroscopy, hydrogen-related infrared absorption bands evolution for NTD FZ(H) Si were measured in detail. It is demonstrated that compared with NTD FZ(Ar) Si, NTD FZ(H) Si exhibits the striking features upon isochronal annealing in temperature range of 150 similar to 650 degreesC: there appears the formation of an excessive shallow donor at annealing temperature of 500 degreesC. It is shown that the annealing behavior is directly related to the reaction of hydrogen and irradiation-induced defects. The evolution of infrared absorption bands upon temperature reflects a series of complex reaction process: irradiation-induced defects decomposition, breaking of Si-H bonds, migration and aggregation of atomic hydrogen, and formation of the secondary defects. (C) 2002 Elsevier Science B.V. All rights reserved.

Electron ground state energy level determination of ZnSe self-organized quantum dots embedded in ZnS

Optical and electrical characterization of the ZnS self-organized quantum dots (QDs) embedded in ZnS by molecular beam epitaxy have been investigated using photoluminescence (PL), capacitance-voltage (C-V), and deep level transient Fourier spectroscopy (DLTFS) techniques. The temperature dependence of the free exciton emission was employed to clarify the mechanism of the PL thermal quenching processes in the ZnSe QDs. The PL experimental data are well explained by a two-step quenching process. The C-V and DLTFS techniques were used to obtain the quantitative information on the electron thermal emission from the ZnSe QDs. The correlation between the measured electron emission from the ZnSe QDs in the DLTFS and the observed electron accumulation in the C-V measurements was clearly demonstrated. The emission energy for the ground state of the ZnSe QDs was determined to be at about 120 meV below the conduction band edge of the ZnS barrier, which is in good agreement with the thermal activation energy, 130 meV, obtained by fitting the thermal quenching process of the free exciton PL peak. (C) 2003 American Institute of Physics.

Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance

Deep levels in semi-insulating (SI) InP obtained by annealing in iron phosphide (IP) ambiance have been characterized by optical transient current spectroscopy (OTCS). Compared with the OTCS result of the SI InP prepared by annealing in pure phosphorus (PP) ambiance, the IP SI InP presents only two traps with activation energies of 0.20 and 0.63 eV, respectively. The results suggest that the diffusion of Fe-atoms suppresses the formation of a few defects in the IP SI InP. The nature of deep levels in the IP and PP SI InP has been discussed on the basis of these results. The relation between material property and defects in those SI InP has also been revealed. (C) 2002 American Institute of Physics.

Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour

We have investigated the photoluminescence mapping characteristics of semi-insulating (SI) InP wafers obtained by annealing in iron phosphide ambience (FeP2-annealed). Compared with as-grown Fe-doped and undoped SI InP wafers prepared by annealing in pure phosphorus vapour (P-annealed), the FeP2-annealed ST InP wafer has been found to exhibit a better photoluminescence uniformity. Radial Hall measurements also show that there is a better resistivity uniformity on the FeP2-annealed Sl InP wafer. When comparing the distribution of deep levels between the annealed wafers measured by optical transient Current spectroscopy, we find that the incorporation of iron atoms into the Sl InP Suppresses the formation of a few defects. The correlation observed in this study implies that annealing in iron phosphorus ambience makes Fe atoms diffuse uniformly and occupy the indium site in the Sl InP lattice. As it stands, we believe that annealing undoped conductive InP in iron phosphide vapour is an effective means to obtain semi-insulating InP wafers with superior uniformity.

Photoluminescence and capacitance transients in highly Mg-doped GaN

Behaviors of the photoluminescence blue-band and near-bandgap peak and the relevant thermal ionization energies of the shallow and deep Mg-related acceptors have been studied, respectively. The 2.989 eV blue-band is attributed to the deep donor-acceptor-pair transitions involving a deep Mg-related acceptor at E-v+0.427 eV. The blueshift with increasing excitation power is explained by variation in the contribution of close and distant donor-acceptor-pairs to the luminescence. The redshift with increasing temperature results from thermal release of carriers from close donor-acceptor-pairs. The 3.26 eV near-bandgap peak is attributed to the shallow donor-acceptor-pair transitions involving a shallow Mg-related acceptor at E-v+0.223 eV. The relevant thermal ionization energies of the shallow and deep Mg-related acceptors, being about E-v+0.16 and E-v+0.50eV, are determined from deep-level transient Fourier spectroscopy measurements.

Optical and electrical characterizations of ZnSe self-organized quantum dots grown by molecular beam epitaxy

Optical and electrical properties of ZnSe self-organized quantum dots were investigated using photoluminescence, capacitance-voltage, and deep level transient Fourier spectroscopy techniques. The temperature dependence of photoluminescence was employed to clarify the mechanism of photoluminescence thermal quenching processes in ZnSe quantum dots. A theoretic fit on considering a two-step quenching processes well explained the experimental data. The apparent carrier concentration profile obtained from capacitance-voltage measurements exhibits an accumulation peak at the depth of about 100nm below the sample surface, which is in good agreement with the location of the quantum dot layer. The electronic ground state of ZnSe quantum dots is determined to be about 0.11 eV below the conduction band of ZnS, which is similar to that obtained by simulating the thermal quenching of ZnSe photoluminescence.

Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers

Gallium nitride (GaN)-based Schottky junctions were fabricated by RF-plasma-assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were deposited on novel double buffer layers that consist of a conventional low-temperature buffer layer (LTBL) grown at 500 degreesC and an intermediate-temperature buffer layer (ITBL) deposited at 690 degreesC. Low-frequency excess noise and deep level transient Fourier spectroscopy (DLTFS) were measured from the devices. The results demonstrate a significant reduction in the density of deep levels in the devices fabricated with the GaN films grown with an ITBL. Compared to the control sample, which was grown with just a conventional LTBL, a three-order-of-magnitude reduction in the deep levels 0.4 eV below the conduction band minimum (Ec) is observed in the bulk of the thin films using DLTFS measurements.