Non-resonant third-order non-linear optical properties of amorphous GeSe2 film

The real and imaginary parts of third-order susceptibility of amorphous GeSe2 film were measured by the method of the femtosecond optical heterodyne detection of optical Kerr effect at 805 nm with the 80 fs ultra fast pulses. The results indicated that the values of real and imaginary parts were 8.8 x 10(-12) esu and -3.0 x 10(-12) esu, respectively. An amorphous GeSe2 film also showed a very fast response within 200 fs. The ultra fast response and large third-order non-linearity are attributed to the ultra fast distortion of the electron orbits surrounding the average positions of the nucleus of Ge and Se atoms. (c) 2005 Elsevier B.V. All rights reserved.

Super-resolution scanning laser microscopy with a third-order optical nonlinear thin film

In a configuration of optical far-field scanning microscopy, super-resolution achieved by inserting a third-order optical nonlinear thin film is demonstrated and analyzed in terms of the frequency response function. Without the thin film the microscopy is diffraction limited; thus, subwavelength features cannot be resolved. With the nonlinear thin film inserted, the resolution is dramatically improved and thus the microscopy resolves features significantly smaller than the smallest spacing allowed by the diffraction limit. A theoretical model is established and the device is analyzed for the frequency response function. The results show that the frequency response function exceeds the cutoff spatial frequency of the microscopy defined by the laser wavelength and the numerical aperture of the convergent lens. The main contribution to the improvement of the cutoff spatial frequency is from the phase change induced by the complex transmission of the nonlinear thin film. Experimental results are presented and are shown to be consistent with the results of theoretical simulations.

The optimization of high performance liquid chromatographic method for analysis of trace microcystins in natural water bodies

The ratio of methanol., water and trifluoroacetic acid ( TFA) was regulated to change the polarity and the pH of the rinse solution and the eluent, so as to improve the high performance liquid chromatography HPLC) detection method for trace microcystines (MCs) in natural water bodies. The results showed that 40 % similar to 45 % methanol-water solution containing 0. 1 % TFA could get good effects on the rinse of impurity, and 70% methanol-water solution containing 0. 1% TFA could elute all the MCs in solid phase extraction ( SPE) cartridge ( C-18), In this way. it is suggested that, in analysis of environmental samples with high concentration of impurity, impurity should be washed with 40% similar to 45% methanol-water solution containing 0. 1% TFA, and MCs should be eluted with 70% similar to 100% methanol-water solution containing 0. 1% TFA.

Interaction between the intrinsic second- and third-order optical fields in an Al0.53Ga0.47N/GaN heterostructure

We present an experimental demonstration of the interaction between the intrinsic second- and third-order optical fields in an Al0.53Ga0.47N/GaN heterostructure. The sample was deposited by metal-organic chemical vapor deposition on (0001) sapphire. The nonlinear optical coefficients of the sample, which were measured with a Mach-Zehnder interferometer system, quadratically increase with the applied modulating voltage, indicating the existence of the third-order optical field. The third-order signal was then detected by the Z-scan method and we calculated the built-in dc field on the AlGaN/GaN interface to confirm the strong interaction between the intrinsic second- and third-order optical fields. (c) 2008 American Institute of Physics.

Third-order optical nonlinearities of lead-free (Na1-xKx)(0.5)Bi0.5TiO3 thin films

(Na1-xKx)(0.5)Bi0.5TiO3 (NKBT) (x = 0.1, 0.2, and 0.3) thin films with good surface morphology and rhombohedral perovskite structure were fabricated on quartz substrates by a sol-gel process. The fundamental optical constants (the band gaps, linear refractive indices and absorption coefficients) of the films were obtained through optical transmittance measurements. The nonlinear optical properties were investigated by Z-scan technique performed at 532 nm with a picosecond laser. A two-photon absorption effect closely related with potassium-doping content was found in thin films, and the nonlinear refractive index n(2) increases evidently with potassium-doping. The real part of the third-order nonlinear susceptibility chi((3)) is much larger than its imaginary part, indicating that the third-order optical nonlinear response of the NKBT films is dominated by the optical nonlinear refractive behavior. These results show that NKBT thin films have potential applications in nonlinear optics. (C) 2007 Elsevier B.V. All rights reserved.

Observation of the third subband population in modulation-doped InGaAs/InAlAs heterostructure

The population of the third (n = 3) two-dimensional electron subband of InGaAs/InAlAs modulation-doped structures has been observed by means of Fourier transform photoluminescence (PL). Three well resolved PL peaks centred at 0.737, 0.908, and 0.980eV are observed, which are attributed to the transitions from the lowest three electron subbands to the n = 1 heavy-hole subband. The subband separations clearly exhibiting the features of the stepped quantum well with triangle and square potentials are consistent with numerical calculation. Thanks to the presence of Fermi cutoff, the population ratio of these three subbands can be estimated. Temperature- and excitation-dependent luminescences are also analyzed.

The third subband population in modulation-doped InGaAs/InAlAs heterostructures

We have observed the population of the third (n=3) two-dimensional electron subband of InGaAs/ InAlAs modulation-doped structures with very dense sheet carrier density by means of Fourier transform photoluminescence (PL). Three well-resolved PL peaks centered at 0.737, 0.908, and 0.980 eV are observed, which are attributed to the recombination transitions from the lowest three electron subbands to the n=1 heavy-hole subband. The subband separations clearly exhibit the features of the stepped quantum well with triangle and square potential, consistent with numerical calculation. Thanks to the presence of the Fermi cutoff, the population ratio of these three subbands can be estimated. Temperature and excitation intensity dependence of the quantum well luminescence intensity is also analyzed. (C) 1997 American Institute of Physics.

Tellurium enhanced non-resonant third-order optical nonlinearity in a germano-silicate optical fiber

碲掺杂的高非线性石英光纤

Phase mismatching analysis of third harmonic generation in BBO crystal

对BBO晶体三次谐波转换过程中相位失配情况进行了研究。当BBO 晶体按Ⅰ类相位匹配(oo→e)进行三次谐波转换时，如果保持基频光正入射，当倍频光从两个相互独立的平面方向(晶体主截面及主截面的垂面)偏离预期方向时，相位失配将出现变化，并且在两个面内的偏离量对转换效率的影响程度不同。我们分别数值模拟了两个方向上的相位失配情况，并给出了谐波转换效率同入射角度偏差的关系。数值模拟结果表明，在主截面内的相位匹配容限角为0.2°，在主截面垂面内的相位匹配容限角为4.5°。同时，开展了实验研究，实验结果与数值模拟结果高度吻合，表明在主截面内的角度偏差对转换效率的影响更大。