Interaction between the intrinsic second- and third-order optical fields in an Al0.53Ga0.47N/GaN heterostructure
Data(s) |
2008
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Resumo |
We present an experimental demonstration of the interaction between the intrinsic second- and third-order optical fields in an Al0.53Ga0.47N/GaN heterostructure. The sample was deposited by metal-organic chemical vapor deposition on (0001) sapphire. The nonlinear optical coefficients of the sample, which were measured with a Mach-Zehnder interferometer system, quadratically increase with the applied modulating voltage, indicating the existence of the third-order optical field. The third-order signal was then detected by the Z-scan method and we calculated the built-in dc field on the AlGaN/GaN interface to confirm the strong interaction between the intrinsic second- and third-order optical fields. (c) 2008 American Institute of Physics. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Chen, P ; Zuo, YH ; Tu, XG ; Cai, DJ ; Li, SP ; Kang, JY ; Yu, YD ; Yu, JZ ; Wang, QM .Interaction between the intrinsic second- and third-order optical fields in an Al0.53Ga0.47N/GaN heterostructure ,APPLIED PHYSICS LETTERS,2008 ,92(16): Art. No. 161112 |
Palavras-Chave | #光电子学 #MACH-ZEHNDER INTERFEROMETER |
Tipo |
期刊论文 |