Synthesis of nickel(II) complexes of alpha-isoxazolylazo-beta-diketones and their absorption of spin-coating films and thermal properties for HD-DVD-R

Three kinds of new nickel(II) complexes of alpha-isoxazolylazo-beta-diketones with blue-violet light absorption were synthesized. Their structures were postulated based on elemental analysis, MS and FT-IR spectra. Smooth films on K9 glass substrates were prepared using the spin-coating method. The absorption properties and thermal stability of these complexes were discussed. The static optical recording test for high density digital versatile disc-recordable (HD-DVD-R) system was also studied. (c) 2005 Elsevier B.V. All rights reserved.

Spectroscopic and thermal properties of short wavelength metal (II) complexes containing alpha-isoxazolylazo-beta-diketones as co-ligands

Two new azo dyes of alpha-isoxazolylazo-beta-dilcetones and their Ni(II) and Cu(II) complexes with blue-violet light wavelength were synthesized using a coupling component, different diazo components and metal (II) ions (Ni2+ and Cu2+). Based on the elemental analysis, MS spectra and FT-IR spectral analyses, azo dyes were unequivocally shown to exist as hydrazoketo and azoenol forms which were respectively obtained from the solution forms and from the solid forms. The action of sodium methoxide (NaOMe) on azo dyes in solutions converts hydrazoketo form into azoenol form, so azo dyes are coordinated with metal (II) ions as co-ligands in the azoenol forms. The solubility of all the compounds in common organic solvents such as 2,2,3,3-tetrafluoro-1-propanol (TFP) or chloroform (CHCl3) and absorption properties of spin-coating thin films were measured. The difference of absorption maxima from the complexes to their ligands was discussed. In addition, the TG analysis of the complexes was also determined, and their thermal stability was evaluated. It is found that these new metal (II) complexes had potential application for high-density digital versatile disc-recordable (HD-DVD-R) system due to their good solubility in organic solvents, reasonable and controllable absorption spectra in blue-violet light region and high thermal stability. (c) 2004 Elsevier B.V. All rights reserved.

Synthesis, spectroscopic properties and thermal stability of metal(II) tetraazaporphyrin complexes with two strong wavelength absorption

Three kinds of metal(II) tetraazaporphyrin complexes with blue-violet and red light wavelength absorption were synthesized by refluxing tetraazaporphyrin ligand and different metal(II) ions, respectively. Their structures were confirmed by elemental analysis, LDI-TOF-MS, FT-IR and UV-Vis. The solubility of metal(II) tetraazaporphyrin complexes in organic solvents and absorption properties of their chloroform solution and films on K9 glass in the region 250-800 nm were measured. The influence on the difference of absorption maximum from metal(II) tetraazaporphyrin complexes to tetraazaporphyrin ligand by different metal(II) ions was studied. In addition, the thermal stability of the complexes was also evaluated. (c) 2006 Elsevier Ltd. All rights reserved.

Synthesis, spectral, and thermal characterizations of Ni(II) and Cu(II) beta-diketone complexes with thenoyltrifluoroacetone ligand

Two kinds of nickel(II) and copper(II) P-diketone complexes derived from thenoyltrifluoroacetone ligand with blue-violet light absorption were synthesized by reacting free ligand and different metal(II) ions in sodium methoxide solution. Their structures were postulated based on elemental analysis, ESI-MS, FT-IR spectra and UV-vis electronic absorption spectra. Smooth films on K9 glass substrates were prepared using the spin-coating method. Their solubility in organic solvents, absorption properties of thin film and thermal stability of these complexes were evaluated. (c) 2006 Elsevier B.V. All rights reserved.

Thermal stress-induced birefringence in borate glass irradiated by femtosecond laser pulses

Thermal stress-induced birefringence in borate glass which has been irradiated by 800-nm femtosecond laser pulses is observed under cross-polarized light. Due to the high temperature and pressure formed in the focal volume, the material at the edge of the micro-modified region is compressed between the expanding region and the unheated one, then stress emerges. Raman spectroscopy is used to investigate the stress distribution in the micro-modified region and indicates the redistributions of density and refractive index by Raman peak shift. We suggest that this technique can develop waveguide polarizers and Fresnel zone plates in integrated optics.

Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method

Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED

Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 mu m

Metamorphic InGaAs quantum well structures grown on GaAs reveal strong light emission at 1.3-1.6 mu m, smooth surface with an average roughness below 2 nm. and good rectifying I-V characteristics. Dark line defects are found in the QW Post growth thermal annealing further improves the luminescence efficiency but does not remove those dark line defects. Some challenges of epitaxial growth using this method for laser applications are discussed. (c) 2006 Elsevier B.V. All rights reserved.

Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes

Time-resolved light-current curves, spectra, and far-field distributions of ridge structure InGaN multiple quantum well laser diodes grown on sapphire substrate are measured with a temporal resolution of 0.1 ns under a pulsed current condition. Results show that the thermal lensing effect clearly improves the confinement of the higher order modes. The thermal lens leads to a lower threshold current for the higher order modes, a higher slope efficiency, and a change in the lasing mode of the device. The threshold current for the higher modes decreases by about 5 mA in every 10 ns in a pulse, and the slope efficiency increases by 7.5 times on the average when higher modes lase. (c) 2006 American Institute of Physics.

Influence of rapid thermal annealing on the optical properties of gallium nitride grown by gas-source molecular-beam epitaxy

Raman scattering, photoluminescence (PL), and nuclear reaction analysis (MA) have been employed to investigate the effects of rapid thermal annealing (RTA) on GaN films grown on sapphire (0001) substrates by gas-source molecular-beam epitaxy, The Raman spectra showed the presence of the E-2 (high) mode of GaN and shift of this mode from 572 to 568 cm(-1) caused by annealing. The results showed that RTA has a significant effect on the strain relaxation caused by the lattice and thermal expansion misfit between the GaN epilayer and the substrate. The PL peak exhibited a blueshift in its energy position and a decrease in the full width at half maximum after annealing, indicating an improvement in the optical quality of the film. Furthermore, a green luminescence appeared after annealing and increased in intensity with increasing annealing time. This effect was attributed to H concentration variation in the GaN film, which was measured by NRA. A high H concentration exists in as-grown GaN, which can neutralize the deep level, and the H-bonded complex dissociates during RTA, This leads to the appearance of a luminescent peak in the PL spectrum. (C) 1998 American Institute of Physics.

Rapid thermal annealing processing of GaN epilayer on sapphire(0 0 0 1)

The effect of rapid thermal annealing (RTA) in a Nz ambient up to 900 degrees C has been investigated for GaN films grown on sapphire(0 0 0 1) substrates. Raman spectra, X-ray diffractometry and Hall-effect studies were performed for this purpose. The Raman spectra show the presence of the E-2 (high) mode and a shift in the wave number of this mode with respect to the annealing processing. This result suggests the presence and relaxation of residual stress due to thermal expansion misfit in the films which are confirmed by X-ray measurements and the structure quality of GaN epilayer was improved. Furthermore, the electron mobility increased at room temperature with respect to decrease of background electron concentration after RTA. (C) 1998 Elsevier Science B.V. All rights reserved.

Pool boiling heat transfer of ultra-light copper foam with open cells

High speed visualizations and thermal performance studies of pool boiling heat transfer on copper foam covers were performed at atmospheric pressure, with the heating surface area of 12.0 mm by 12.0 mm, using acetone as the working fluid. The foam covers have ppi (pores per inch) from 30 to 90, cover thickness from 2.0 to 5.0 mm, and porosity of 0.88 and 0.95. The surface superheats are from -20 to 190 K, and the heat fluxes reach 140 W/cm(2). The 30 and 60 ppi foam covers show the periodic single bubble generation and departure pattern at low surface superheats. With continuous increases in surface superheats, they show the periodic bubble coalescence and/or re-coalescence pattern. Cage bubbles were observed to be those with liquid filled inside and vented to the pool liquid. For the 90 ppi foam covers, the bubble coalescence takes place at low surface superheats. At moderate or large surface superheats, vapor fragments continuously escape to the pool liquid. Boiling curves of copper foams show three distinct regions. Region I and II are those of natural convection heat transfer, and nucleate boiling heat transfer for all the foam covers. Region III is that of either a resistance to vapor release for the 30 and 60 ppi foam covers, or a capillary-assist liquid flow towards foam cells for the 90 ppi foam covers. The value of ppi has an important effect on the thermal performance. Boiling curves are crossed between the high and low ppi foam covers. Low ppi foams have better thermal performance at low surface superheats, but high ppi foams have better one at moderate or large surface superheats and extend the operation range of surface superheats. The effects of other factors such as pool liquid temperature, foam cover thickness on the thermal performance are also discussed.

Solution-processable highly efficient yellow- and red-emitting phosphorescent organic light emitting devices from a small molecule bipolar host and iridium complexes

A bipolar transport compound, 2,5-bis(4-(9-(2-ethylhexyl)-9H-carbazol-3-yl) phenyl)-1,3,4-oxadiazole (CzOXD), incorporating both electron-and hole-transport functionalities, was synthesized and fully characterized by H-1 NMR, C-13 NMR, elemental analysis and mass spectrometry. Its thermal, electrochemical, electronic absorption and photoluminescent properties were studied

Simple and Efficient Near-Infrared Organic Chromophores for Light-Emitting Diodes with Single Electroluminescent Emission above 1000 nm

A series of NIR organic chromophores with donor-pi-acceptor-pi-donor structure are synthesized. Good thermal stability and strong photoluminescence in solid state render them suitable for application in light-emitting diodes. Exclusive near-infrared emission at 1080 nm with external quantum efficiency of 0.28% is obtained from the nondoped OLEDs. The longest electroluminescence wave-length is 1220 nm.

Synthesis and Application of Thiadiazoloquinoxaline-Containing Chromophores as Dopants for Efficient Near-Infrared Organic Light-Emitting Diodes

series of a donor-acceptor-donor type of near-infrared (NIR) fluorescent chromophores based on [1,2,5]thiadiazolo[3,4-g]quinoxaline (TQ) as an electron acceptor and triphenylamine as an electron donor are synthesized and characterized. By introducing pendent phenyl groups or changing the pi-conjugation length in the TQ core, we tuned tile energy levels of these chromophores, resulting in the NIR emission in a range from 784 to 868 nm. High thermal stability and glass transition temperatures allow these chromophores to be used as dopant emitters, which can be processed by vapor deposition for the fabrication of organic light-emitting diodes (OLEDs) having the multilayered structure of ITO/MoO3/NPB/Alq(3):dopant emitter/BCP/Alq(3)/LiF/Al. The electroluminescence spectra of the devices based on these new chromophores cover a range from 748 to 870 nm. With 2 wt % of dopant 1, the LED device shows an exclusive NIR emission at 752 nm with the external quantum efficiency (EQE) as high as 1.12% over a wide range of current density (e.g., around 200 mA cm(-2)).

Enhancement of stability of polymer light-emitting diodes by post annealing

We investigate the effect of thermal annealing before and after cathode deposition on the stability of polymer light-emitting diodes (PLEDs) based on green fluorescent polyfluorene derivative. The annealed PLEDs exhibit improved charge transport and red-shift emission compared to the as-fabricated device. The stability of the PLEDs is largely enhanced by post-annealing before and after Ca deposition, which is attributed to the enhanced charge transport and the intimate contact between the cathode and the emissive layer.