ON THE FORMATION OF THE SBGA HETEROANTISITE IN METALORGANIC VAPOR-PHASE EPITAXIAL GAAS-SB

Metalorganic vapor-phase epitaxial growth of GaAs doped with isovalent Sb is reported. By increasing the trimethylantimony concentration during growth the total Sb concentration was varied between 1 X 10(17)-1 X 10(19) cm-3. A new deep level defect with an activation energy of the thermal emission rates of E(c) - 0.54 eV is observed. The defect concentration increases with increasing As partial pressure and with increasing Sb doping. It is also found that the EL2 concentration decreases with increasing Sb doping. The new energy level is suggested to be the 0/ + transition of the Sb(Ga) heteroantisite defect. No photocapacitance quenching effect, reflecting a metastable state as seen for EL2 (As(Ga)), is observed for Sb(Ga).

PHOTOEMISSION-STUDY OF THE INTERFACIAL FORMATION PROCESS AND REACTIONS BETWEEN AL AND HYDROGENATED AMORPHOUS SI

Using photoemission spectroscopy and Auger electron spectroscopy, the interfacial formation process and the reactions between Al and hydrogenated amorphous Si are probed, and annealing behaviors of the Al/a-Si:H system are investigated as well. It is found that a three-dimensional growth of Al metal clusters which includes reacted Al and non-reacted metal Al occurs at the initial Al deposition time, reacted Al and Si alloyed layers exist in the Al/a-Si:H interface, and non-reacted Al makes layer-by-layer growth forming a metal Al layer on the sample surface. The interfacial reactions and element interdiffusion of Al/a-Si:H are promoted under the vacuum annealing.

An investigation of the formation mechanisms of electric field domains in GaAs/AlAs superlattices

We have studied the vertical transport and formation mechanisms of electric field domains in doped weakly-coupled GaAs/AlAs superlattices. Under hydrostatic pressure two kinds of sequential resonant tunneling are observed within the pressure range from 0 to 4.5 kbar. A transition from Gamma-Gamma to Gamma-X sequential resonant tunneling occurs at P-t approximate to 1.6 kbar. For P < P-t, the high electric field domain is formed by the Gamma-Gamma process, while for P > P-t it is preferentially formed by the Gamma-X process.

Distribution and mode of occurrence of As；Hg and Se and sulfur in coal Seam 3 of the Shanxi Formation,Yanzhou Coalfield；China

IEECAS SKLLQG

Formation of the Yazi Spring Stream and its significance on tectonics-climate on the northern slope of Kunlun Mountains

IEECAS SKLLQG

Formation of a novel type of reverse microemulsion system and its application in synthesis of the nanostructured La0.95Ba0.05MnAl11O19 catalyst

In the study, a novel microemulsion system, consisting of water, iso-propanol and n-butanol, was developed to synthesize the nanostructured La0.95Ba0.05MnAl11O19 catalyst with high surface area and catalytic activity for methane combustion.