A study of the formation of nanometer-scale cavities in helium-implanted 4H-SiC

Autoria(s): ZhangCH; DonnellySE; VishnyakovVM; EvansJH; ShibayamaT; SunYM
Data(s)

2004
Identificador

http://ir.impcas.ac.cn/handle/113462/1195

http://www.irgrid.ac.cn/handle/1471x/127675
Fonte

ZhangCH；DonnellySE；VishnyakovVM；EvansJH；ShibayamaT；SunYM.A study of the formation of nanometer-scale cavities in helium-implanted 4H-SiC,NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2004,218():53-60
Palavras-Chave #bubbles #helium #4H-SiC #TEM #RBS-channeling #modeling
Tipo

期刊论文
Acesso ao item digital