74 resultados para Temperature increase
Resumo:
The effect of thermally activated energy on the dislocation emission from a crack tip in BCC metal Mo is simulated in this paper. Based on the correlative reference model on which the flexible displacement boundary scheme is introduced naturally, the simulation shows that as temperature increases the critical stress intensity factor for the first dislocation emission will decrease and the total number of emitted dislocations increase for the same external load. The dislocation velocity and extensive distance among partial dislocations are not sensitive to temperature. After a dislocation emission, two different deformation slates are observed, the stable and unstable deformation states. In the stable deformation slate, the nucleated dislocation will emit from the crack tip and piles up at a distance far away from the crack tip, after that the new dislocation can not be nucleated unless the external loading increases. In the unstable deformation state, a number of dislocations can be emitted from the crack lip continuously under the same external load.
Resumo:
The surface tension of molten tin has been determined by the sessile drop method at The surface tension of molten tin has been determined by the sessile drop method at temperatures ranging from 523 to 1033 K and in the oxygen partial pressure (P-O2) range from 2.85 x 10(-19) to 8.56 x 10(-6) MPa, and its dependence on temperature and oxygen partial pressure has been analyzed. At P-O2 = 2.85 x 10(-19) and 1.06 x 10(-15) MPa, the surface tension decreases linearly with the increase of temperature and its temperature coefficients are -0.151 and -0.094 mNm(-1) K-1, respectively. However, at high P-O2 (3.17 x 10(-10), 8.56 x 10(-6) MPa), the surface tension increases with the temperature near the melting point (505 K) and decreases above 723 K. The surface tension decrease with increasing P-O2 is much larger near the melting point than at temperatures above 823 K. The contact angle between the molten tin and the alumina substrate is 158-173degrees, and the wettability is poor.
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In this paper, the mechanical properties of PI/Si_O, nanocomposite hybrid films with different silica doping levels are experimentally studied at low temperature. Experimental results show that the coefficient of thermal expansion (CTE) of the PI/Si_O, nanocomposite hybrid films gradually reduces when the ambiance temperature is decreased. At the liquid nitrogen temperature (77 K), the CTE value is about five times less than that at room temperature (287 K). The measured CTEs of hybrid films greatly decrease when doped with inorganic silica, especially when the silica doping level is more than 1 wt.%. However, too high silica contents (more than 10 wt.%) can cause problem to disperse effectively and the specimens become quite opaque. Experimental results also show that the effects of the pre-applied stress levels can be neglected on the CTE testing. When the ambient temperature changes from 287 to 77 K, the measured average values of the films' ultimate tensile strength (UTS) and Young's modulus increase about 60 and 90%, respectively, while the breaking elongation decreases about 42%.
Resumo:
Molecular dynamics (MD) simulations are carried out to analyze the diffusion bonding at Cu/Al interfaces. The results indicate that the thickness of the interfacial layer is temperature-dependent, with higher temperatures yielding larger thicknesses. At temperatures below 750 K, the interface thickness is found to increase in a stepwise manner as a function of time. At temperatures above 750 K, the thickness increases rapidly and smoothly. When surface roughness is present, the bonding process consists of three stages. In the first stage, surfaces deform under stress, resulting in increased contact areas. The second stage involves significant plastic deformation at the interface as temperature increases, resulting in the disappearance of interstices and full contact of the surface pair. The last stage entails the diffusion of atoms under constant temperature. The bonded specimens show tensile strengths reaching 88% of the ideal Cu/Al contact strength. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Resumo:
Algal blooms, worsening marine ecosystems and causing great economic loss, have been paid much attention to for a long time. Such environmental factors as light penetration, water temperature, and nutrient concentration are crucial in blooms processes. Among them, only nutrients can be controlled. Therefore, the threshold of nutrients for algal blooms is of great concern. To begin with, a dynamic eutrophication model has been constructed to simulate the algal growth and phosphorus cycling. The model encapsulates the essential biological processes of algal growth and decay, and phosphorus regeneration due to algal decay. The nutrient limitation is based upon commonly used Monod's kinetics. The effects of temperature and phosphorus limitation are particularly addressed. Then, we have endeavored to elucidate the threshold of phosphorus at different temperature for algal blooms. Based on the numerical simulation, the isoquant contours of change rate of alga as shown in the figure are obtained, which obviously demonstrate the threshold of nutrient at an arbitrary reasonable temperature. The larger the change rate is, the more rapidly the alga grows. If the phosphorus concentration at a given temperature remains larger than the threshold the algal biomass may increase monotonically, leading to the algal blooming. With the rising of temperature, the threshold is apparently reduced, which may explain why likely red tide disasters occur in a fine summer day. So, high temperature and sufficient phosphorus supply are the major factors which result in algal growth and blowout of red tide.
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The thermal expansion coefficient (TEC) of an ideal crystal is derived by using a method of Boltzmann statistics. The Morse potential energy function is adopted to show the dependence of the TEC on the temperature. By taking the effects of the surface relaxation and the surface energy into consideration, the dimensionless TEC of a nanofilm is derived. It is shown that with decreasing thickness, the TEC can increase or decrease, depending on the surface relaxation of the nanofilm.
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GaInP/GaAs dual-junction solar cell with a conversion efficiency of 25.2% has been fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Quantum efficiencies of the solar cell were measured within a temperature range from 25 to 160A degrees C. The results indicate that the quantum efficiencies of the subcells increase slightly with the increasing temperature. And red-shift phenomena of absorption limit for all subcells are observed by increasing the cell's work temperature, which are consistent with the viewpoint of energy gap narrowing effect. The short-circuit current density temperature coefficients dJ (sc)/dT of GaInP subcell and GaAs subcell are determined to be 8.9 and 7.4 mu A/cm(2)/A degrees C from the quantum efficiency data, respectively. And the open-circuit cell voltage temperature coefficients dV (oc)/dT calculated based on a theoretical equation are -2.4 mV/A degrees C and -2.1 mV/A degrees C for GaInP subcell and GaAs subcell.
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The furnace temperature and heat flux distributions of 1 MW tangentially fired furnace were studied during coal-over-coal reburn, and the influences of the position of reburn nozzle and reburn fuel fraction on furnace temperature and heat flux distributions were investigated. Compared with the baseline, the flue gas temperature is 70–90 C lower in primary combustion and 130–150 C higher at furnace exit, and the variations of the flue gas temperature distributions along furnace height are slower. The temperature distribution along the width of furnace wall decreases with the increase of the relative furnace height. In the primary combustion zone and the reburn zone, the temperature and heat flux distributions of furnace wall are much non-uniform and asymmetric along the width of furnace wall, those of furnace wall in the burnout zone are relatively uniform, and the temperature non-uniformity coefficients of the primary combustion zone, the reburn zone and the burnout zone are 0.290, 0.100 and 0.031, respectively.
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Under coronal conditions, the steady state rate-equations are used to calculate the inter-stage line ratios between Li-like Is(2)2p(P-2(3/2))-> 1s(2)2s -> ((2) S-1/2) and He-like 1s2p (P-1(1))-> 1s(2) (S-1(0)) transitions for Ti in the electronic temperature ranges from 0.1 keV to 20 keV. The results show that the. temperature sensitivities are higher at the electronic temperature less than 5000 eV and the temperature sensitivities will decrease with the increase of electronic temperature.
Resumo:
Large ruby with the size of circle divide75 x 45 mm was grown by temperature gradient technique for the first time. Absorption spectrum was carried out in the range of 190-800 nm by spectrophotometer, and the concentration spatial distribution of Cr3+ in ruby was calculated from the absorption coefficient that based on the Beer-Lambert's Law. Cr3+ ions gradually increase alone both the growth axis and the radial direction. The shape and ingredient of the inclusions were measured by means of Leitz ride field microscopy and scanning electron microscopy. Lane photos and X-ray omega scan show the good quality of as grown ruby. The optimized growth conditions were pointed out based on the observation. (C) 2004 Elsevier B.V. All rights reserved.
Resumo:
Color centers and impurity defects of Ce:YAG crystals grown in reduction atmosphere by temperature gradient techniques have been investigated by means of gamma irradiation and thermal treatments. Four absorption bands associated with color centers or impurity defects at 235, 255, 294 and 370 nm were observed in as-grown crystals. Changes in optical intensity of the 235 and 370 nm bands after gamma irradiation indicate that they are associated with F+-type color center. Charge state change processes of Fe3+ impurity and Ce3+ ions take place in the irradiation process. The variations of Ce3+ ions concentration clearly indicate that Ce4+ ions exist in Ce:YAG crystals and gamma irradiations could increase the concentration of Ce3+ ions. Annealing treatments and the changes in optical density suggest that a heterovalent impurity ion associated with the 294 nm band seems to be present in the crystals. (c) 2005 Elsevier B.V. All rights reserved.
Resumo:
TiO2 coatings were prepared on fused silica with conventional electron beam evaporation deposition. After TiO2 thin films were annealed at different temperatures for 4 h, several properties were investigated by X-ray diffraction (XRD), spectrometer.. photoelectron spectroscopy (XPS) and AFM. It was found that with the annealing temperature increasing, the transmittance of TiO2 coatings decreased, and the cutoff wavelength shifted to long wavelength in near ultraviolet band. Especially, when coatings were annealed at high temperature, the optical loss is very serious, which can be attributed to the scattering and the absorption of TiO2 coatings. XRD patterns revealed that only anatase phase was observed in TiO2 coatings regardless of the different annealing temperatures. XPS results indicated that the fine chemical shift of TiO2 2p(1/2) should be attributed to existence of oxygen vacancies around Ti+4 ion. The investigation on surface morphology by AFM showed that the RMS of titania thin films gradually increases from less than 0.40 nm to 5.03 nm and it should be ascribed to the growth of titanium dioxide grain size with the increase of annealing temperature. (C) 2005 Elsevier B.V. All rights reserved.
Resumo:
Temperature fields of 355 nm high-reflectance (HR) coatings were investigated based on the interface absorption model. It was found that the highest temperature in the HR coatings increased with an increase in the extinction coefficient of the interface A, B, C, Al2O3 and MgF2. The highest temperature of HR coatings that can be reached increased quickly with the increase in the extinction coefficient of interface A in particular. The temperature rises of 355 nm HR coatings at different layers and different deposition temperatures were investigated based on experiments also. The damage mechanism of 355 nm HR coatings was confirmed with temperature fields and the interface absorption model.
Resumo:
The thermal stability of electron beam deposited TiO2 monolayers and TiO2/SiO2 high reflectors (HR) during 300 to 1100 degrees C annealing is studied. It is found that the optical loss of film increases with the increase in annealing temperature, due to the phase change, crystallisation and deoxidising of film. Scattering loss dominates the optical property degradation of film below 900 degrees C, while the absorption is another factor at 1100 degrees C. The increase in refractive index and decrease in physical thickness of TiO2 layer shift the spectra of HR above 900 degrees C. The possible crack mechanism on the surface of HR during annealing is discussed. Guidance for application on high temperature stable optical coatings is given.
Resumo:
Photosynthetic activity during rehydration at four temperatures (5, 15, 25, 35 degrees C) was studied in a terrestrial, highly drought-tolerant cyanobacterium, Nostoc flagelliforme. At all the temperatures, the optimum quantum yield F-v/F-m increased rapidly within I It and then increased slowly during the process of rehydration. The increase in F-v/F-m at 25 and 35 degrees C was larger than that at 5 and 15 degrees C. In addition, the changes of initial intensity of fluorescence (F-0) and variable fluorescence (F-v) were more significant at 25 and 35 degrees C than those at 5 and 15 degrees C. Chlorophyll a content increased with the increase of temperature during the course of rehydration, with this being more pronounced at 25 and 35 degrees C. The photosynthetic rates at 25 and 35 degrees C were higher than those at 5 and 15 degrees C. Induction of chlorophyll fluorescence with sustained rewetting at 5 and 15 degrees C had two phases of transformation, whereas at 25 and 35 degrees C it had a third peak kinetic phase and showed typical chlorophyll fluorescence steps on rewetting for 24 h, representing a normal physiological state. A comparison of the chlorophyll fluorescence parameters, chlorophyll a content, and the chlorophyll fluorescence induction led to the conclusion that N. flagelliforme had a more rapid and complete recovery at 25 and 35 degrees C than that at 5 and 15 degrees C, although it could recover its photosynthetic activity at any of the four temperatures. (c) 2007 Published by Elsevier Ltd.