147 resultados para TEMPERATURE RANGE 0400-1000 K


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An asymmetrical double Schiff-base Cu(II) mononuclear complex, HCuLp (H(3)Lp is N-3-carboxylsalicylidene-N'-5-chlorosalicylaldehyde-1,3-diaminopropane) and a heterometal trinuclear complex with double molecular structure (CuLp)(2)Co center dot 5H(2)O have been synthesized and characterized by means of elemental analyses, IR and electronic spectra. The crystal structure of the heterotrinucler complex was determined by X-ray analysis. Each asymmetric unit within the unit cell of the complex contains two heterotrinuclear neutral molecules (a) [CuLpCoCuLp], (b) [(CuLpH(2)O) CoCuLp] and four uncoordinated water molecules. In the two neutral molecules, the central Co2+ ions are located at the site of O-6 with a distorted octahedral geometry, one terminal Cu2+ ion (Cu(3)) at the square-pyramidal environment of N2O3, and the other three at the square planar coordination geometry with N2O2 donor atoms. Magnetic properties of the heterotrinucler complex have been determined in the temperature range 5-300 K, indicating that the interaction between the central Co2+ ion and the outer Co2+ ions is antiferromagnetic.

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Five Ln(2)SrMCuO(6.5) oxides (M = Co, Ln = Y and Ho; M = Fe, Ln = Y, Ho, and Dy) were synthesized, and their crystal structures, IR spectra, and physical properties were studied. They have almost the same structure and crystallize in orthorhombic systems. Below room temperature, Y2SrFeCuO6.5, a known layered oxide, shows antiferromagnetic behavior, but the four new oxides are paramagnetic. Y2SrFeCuO6.5 fits the Curie-Weiss law in the temperature range 300-100 K, but Y2SrCoCuO6.5 shows complex magnetic behavior because of the disproportion of some Co+3 to Co+2 and Co+4 The five oxides are all p-type semiconductors in the measured temperature range and have large electrical resistivities at room temperature.

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A new solid solution series, NdSr(1-x)M(x)NiO(4) (M = Ca: 0.0 less than or equal to x less than or equal to 1.0; M = Ba: 0.0 less than or equal to x less than or equal to 0.6), was synthesized by solid state reaction, and the structures, magnetic and electrical properties and optical spectra of this series have been studied. All the samples crystalized in tetragonal systems, with the exception of NdCaNiO4, which crystallized in the orthohombic system. IR spectra of NdSr1-xCaxNiO4 indicated that the lengths of two Ni-O bonds decrease with increasing Ca content. The electrical conduction changed from metallic-type to semiconductive-type when x greater than or equal to 0.4 (M = Ca, Ba), and the room temperature resistivities of NdSr1-xCaxNiO4 increased with the increase of Ca content. Magnetic susceptibility measurements revealed that Ni+3 ions in all the samplies were in low-spin state over the temperature range 77-300 K.

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Three new oxides Ln(2)MCo(2)O(7) (Ln = Sm, Gd; M = Sr, Ba) have been synthesized in solid state reaction method. The powder X-ray diffraction spectra show that they are all isostructural with Sr3Ti2O7. The electrical resistivities in the temperature range 300-1100 K show that they are all semiconductors, and a transition to metals is observed at 1053, 1053, and 573 K for Sm2SrCo2O7, Gd2SrCo2O7, and Sm2BaCo2O7, respectively. The magnetic suspectivities of Gd2SrCo2O7 in the temperature range 300-673 K fit the Curie-Weiss law well. A plateau is observed in the curves of Sm(2)MCo(2)O(7) (M = Sr, Ba) which is attributed to the configuration state change of Co(III) from low spin to high spin. (C) 1995 Academic Press, Inc.

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On the basis of the spin and valence state equilibria and superexchange interaction of the various cobalt ions in LaCoO3, an approximate semiempirical formula has been proposed and used to calculate magnetic susceptibilities of LaCoO3 over a wide temperature range (100-1200 K). The results indicate that there are thermodynamic equilibria between the low spin state Co(III) (t2g6e(g)0) ion, the high spin state Co3+ (t2g4e(g)2) ion, the Co(II) (t2g6e(g)1) ion and the Co(IV) (t2g5e(g)0) ion in LaCoO3. The energy difference between the low spin state Co(III) and the high spin state Co3+ is about 0.006 eV. The content of the low spin state Co(III) ion is predominant in LaCoO3 and the content of the high spin state Co3+ ion varies with temperature, reaching a maximum at about 350 K, then decreasing gradually with increasing temperature. At low temperature the contents of the Co(II) ion and the Co(IV) ion in LaCoO3 are negligible, while above 200 K the contents of both the Co(II) ion and the Co(IV) ion increase with increasing temperature; however, the content of the Co(II) ion always is larger than that of the Co(IV) ion at any temperature. These calculated results are in good agreement with experimental results of the Mossbauer effect, magnetic susceptibility and electrical conductivity of LaCoO3.

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The paramagnetic susceptibility of lanthanum manganite has been measured over a wide temperature range (100-1073 K). On the basis of the thermodynamic equilibria between the various manganese ions with different valence and spin states and the magnetic interactions between the various manganese ions, a semiempirical formula has been proposed to calculate the paramagnetic susceptibilities of lanthanum manganite at different temperatures. The results indicate that most of the discrepancies between the calculated and experimental reciprocal susceptibilities of lanthanum manganite are less than 10% and that the relative contents of the various manganese ions in lanthanum manganite vary with temperature. The relative content of the trivalent manganese ion with a high spin state is dominant over the whole temperature range, while be relative content of the tetravalent manganese ion with a high spin state decreases monotonously with increasing temperature. At 300 K the calculated relative content of the tetravalent manganese ion in lanthanum manganite is about 34%, which is in good agreement with the experimental result (30%). There are some divalent manganese ions present in lanthanum manganite from low temperature to high temperature. The ratio of the relative contents of the tetravalent and divalent manganese ions in the compound varies with temperature. Above 750 K the relative content of the tetravalent manganese ion is less than that of the divalent manganese ion. The variation in the electrical resistivity of lanthanum manganite with temperature has also been interpreted reasonably.

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The heat capacity of nanostructured amorphous SiO2 (na-SiO2) has been measured by adiabatic calorimetric method over the temperature range 9-354 K. TG and differential scanning calorimeter (DSC) were also employed to determine the thermal stability. Glass transition temperature (T-g) for the two same grain sizes with different specific surface of naSiO(2) samples and one coarse-grained amorphous SiO2 (ca-SiO2) sample were determined to be 1377, 1397 and 1320 K, respectively. The low temperature experimental results show that there are significant heat capacity (C-P) enhancements among na-SiO2 samples and ca-SiO2. Entropy, enthalpy, Gibbs free energy and Debye temperature (theta (D)) were obtained based on the low temperature heat capacity measurement of na-SiO2. The Cp enhancements of na-SiO2 were discussed in terms of configurational and vibrational entropy. (C) 2001 Elsevier Science B.V. All rights reserved.

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The heat transfer characteristics of China no. 3 kerosene were investigated experimentally and analytically under conditions relevant to a regenerative cooling system for scramjet applications. A test facility developed for the present study can handle kerosene in a temperature range of 300-1000 K, a pressure range of 2.6-5 MPa, and a mass How rate range of 10-100 g/s. In addition, the test section was uniquely designed such that both the wall temperature and the bulk fuel temperature were measured at the same location along the flowpath. The measured temperature distributions were then used to analytically deduce the local heat transfer characteristics. A 10-component kerosene surrogate was proposed and employed to calculate the fuel thermodynamic and transport properties that were required in the heat transfer analysis. Results revealed drastic changes in the fuel flow properties and heat transfer characteristics when kerosene approached its critical state. Convective heat transfer enhancement was also found as kerosene became supercritical. The heat transfer correlation in the relatively low-fuel-temperature region yielded a similar result to other commonly used jet fuels, such as JP-7 and JP-8, at compressed liquid states. In the high-fuel-temperature region, near and beyond the critical temperature, heat transfer enhancement was observed; hence, the associated correlation showed a more significant Reynolds number dependency.

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Ternary CoNiP nanowire (NW) arrays have been synthesized by electrochemical deposition inside the nanochannels of anodic aluminum oxide (AAO) template. The CoNiP NWs deposited at room temperature present soft magnetic properties, with both parallel and perpendicular coercivities less than 500 Oe. In contrast, as the electrolyte temperature (T-elc) increases from 323 to 343 K, the NWs exhibit hard magnetic properties with coercivities in the range of 1000-2500 Oe. This dramatic increase in coercivities can be attributed to the domain wall pinning that is related to the formation of Ni and Co nanocrystallites and the increase of P content. The parallel coercivity (i.e. the applied field perpendicular to the membrane surface) maximum as high as 2500 Oe with squareness ratio up to 0.8 is achieved at the electrolyte temperature of 328 K. It has been demonstrated that the parallel coercivity of CoNiP NWs can be tuned in a wide range of 200-2500 Oe by controlling the electrolyte temperature, providing an easy way to control magnetic properties and thereby for their integration with magnetic-micro-electromechanical systems (MEMS). (C) 2008 Elsevier B.V. All rights reserved.

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The first report of a short wavelength infrared detector based on type II InAs/GaSb superlattices is presented. Very short period superlattices containing InAs (2ML)/GaSb (8ML) superlattices (SLs) were grown by molecular-beam epitaxy on GaSb substrates. The photoluminescence showed a cut-off wavelength at 2.1 mu m at 10 K and 2.6 mu m at 300 K. Room-temperature optical transmittance spectra shows obvious absorption in InAs (2ML)/GaSb (8ML) SL in the range of 450-680 meV, i.e. 1.8-2.7 mu m. The cut-off wavelength moved from 2.3 mu m to 2.6 mu m with temperature rising from 77 K to 300 K in photoresponse spectra. The blackbody response R-v exponentially decreased as a function of 1/T in two temperature sections (130-200 K and 230-300 K). The blackbody detectivity D-bb(center dot) was beyond 1 x 10(8) cmHz(1/2)/W at room temperature. (C) 2009 Elsevier B.V. All rights reserved.

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We report on the material growth and device performance characterization of a strain-compensated In0.54Ga0.46As/In0.51Al0.49As quantum cascade laser at lambda similar to 8 mu m. For 2 mu s pulse at a 5 kHz repetition rate, laser action is achieved up to room temperature (30 degrees C). The tuning coefficient d lambda/dT is 1.37 nm K-1 between 83 K and 163 K and 0.60 nm K-1 in the range from 183 K to 303 K. The peak output power is reported to be similar to 11.3 mW per facet at 293 K and the corresponding threshold current density is 5.69 kA cm(-2).

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GaInNAs/GaAs single-quantum-well (SQW) lasers have been grown by solid-source molecular beam epitaxy. N is introduced by a home-made de-active plasma source. Incorporation of N into InGaAs decreases the bandgap significantly. The highest N concentration of 2.6% in a GaInNAs/GaAs QW is obtained, corresponding to the photoluminescence (PL) peak wavelength of 1.57 mum at 10 K. The PL peak intensity decreases rapidly and the PL full width at half maximum increases with the increasing N concentrations. Rapid thermal annealing at 850 degrees C could significantly improve the crystal quality of the QWs. An optimum annealing time of 5s at 850 degrees C was obtained. The GalnNAs/GaAs SQW laser emitting at 1.2 mum exhibits a high characteristic temperature of 115 K in the temperature range of 20 degrees C- 75 degrees C.

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Photoluminescence of ZnSe, Zn0.84Mn0.16Se alloy, and ZnSe/Zn0.84Mn0.16Se superlattice (SL) have been measured in the temperature range from 10 to 300 K. It is found that the band gap of the ZnSe was smaller than that of the Zn0.84Mn0.16Se alloy at 10 K, but larger than that of the alloy at 300 K. Then the well and barrier layers of the ZnSe/Zn0.84Mn0.16Se SL would be expected to turn over at about 180 K. This type of turn over was observed in the SL sample. The turn over took place at 80 K, somewhat lower than the expected temperature. A calculation including the strain in the ZnSe/Zn0.84Mn0.16Se SL indicates that the heavy-hole bands begin crossing at 75 K, which agrees well with experimental results. [S0163-1829(99)13127-8].

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Room-temperature microwave (MW) oscillations are observed in GaAs/AlAs (10 nm/2 nm) doped weakly coupled superlattices (SLs) in the first plateau of the I-V curve. Oscillations induced by sequential resonant tunneling are detected in a temperature range from 15 to 300 K by applying DC bias on the Si, diodes. The temperature dependence of current at small fixed bias voltage is also measured. Through analysis, it is found that the dominant transport mechanisms are sequential resonant tunneling and phonon-assisted tunneling when the temperature is below 300 K. The low bias voltage at which oscillations are realized is helpful to restrain thermionic emission through the X valley of AlAs barriers in the room-temperature transport. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

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We demonstrate room temperature operation of photonic-crystal distributed-feedback quantum cascade lasers emitting at 4.7 mu m. A rectangular photonic crystal lattice perpendicular to the cleaved facet was defined using holographic lithography. The anticrossing of the index- and Bragg-guided dispersions of rectangular lattice forms the band-edge mode with extended mode volume and reduced group velocity. Utilizing this coupling mechanism, single mode operation with a near-diffractive-limited divergence angle of 12 degrees is obtained for 33 mu m wide devices in a temperature range of 85-300 K. The reduced threshold current densities and improved heat dissipation management contribute to the realization of devices' room temperature operation.