Temperature-induced turnover of the well and barrier layers in ZnSe/Zn0.84Mn0.16Se superlattices


Autoria(s): Zhu ZM; Li GH; Zhang W; Han HX; Wang ZP; Wang J; Wang X
Data(s)

1999

Resumo

Photoluminescence of ZnSe, Zn0.84Mn0.16Se alloy, and ZnSe/Zn0.84Mn0.16Se superlattice (SL) have been measured in the temperature range from 10 to 300 K. It is found that the band gap of the ZnSe was smaller than that of the Zn0.84Mn0.16Se alloy at 10 K, but larger than that of the alloy at 300 K. Then the well and barrier layers of the ZnSe/Zn0.84Mn0.16Se SL would be expected to turn over at about 180 K. This type of turn over was observed in the SL sample. The turn over took place at 80 K, somewhat lower than the expected temperature. A calculation including the strain in the ZnSe/Zn0.84Mn0.16Se SL indicates that the heavy-hole bands begin crossing at 75 K, which agrees well with experimental results. [S0163-1829(99)13127-8].

Identificador

http://ir.semi.ac.cn/handle/172111/12844

http://www.irgrid.ac.cn/handle/1471x/65392

Idioma(s)

英语

Fonte

Zhu ZM; Li GH; Zhang W; Han HX; Wang ZP; Wang J; Wang X .Temperature-induced turnover of the well and barrier layers in ZnSe/Zn0.84Mn0.16Se superlattices ,PHYSICAL REVIEW B,1999,60(4):2691-2696

Palavras-Chave #半导体物理 #PRESSURE #DEPENDENCE #ZN1-XMNXSE #GAP
Tipo

期刊论文