53 resultados para Töpffer, Rodolphe, 1799-1846.


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<正> 粒鲇科Akyisidae鱼类是分布在东南亚地区的小型鱼类,包括三个属。其中大粒鲇属Achrochodomchthys Bleeker只产于苏门答腊岛、爪哇岛和加里曼丹岛。狭尾粒鲇属Breitensteinia Steindachner只产于苏门答腊岛和加里曼丹岛。粒鲇属Akysis Bleeker鱼类已记录的有下列8种:Akysis variegatus(Bleeker),1846;Akysis macronemus Bleeker,1860;Akysis pictus Gnther,1883;A

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<正> 鳊鱼是很名贵的经济鱼类,亦称(鱼边)角,东北地区称鳊花。在我国的江河中分布很广,长江及松花江流域中最为丰盛。这种鱼最初的记载是在1844年,学名为Leuciscus bramula,是Cuvier和Valencienes两氏订立的。后来在1846及1855年中,Richardson和Basilewsky两氏又先后记述了这种鱼类;并分别订为Abramis bramula和Abramis pekinensis。到1865年,Bleeker氏才确定这种鱼的属名为Parabramis,借以和只有一行咽喉齿

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<正> 鳊鱼类是我国鲤科鱼类中分布得很广的一类经济鱼。从1846年理查逊(Rich-ardson)首先记述起,许多中外鱼类学者就陆续地发表了这方面的材料。到目前为止,鱼类分类学者多数认为中国的鳊鱼类应分别属于两个属,即鳊属——Pa-rabramis,和鲂属——Megalobrama。鳊属中仅有一个种,即是鳊鱼——Parabramis

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In European bitterling Rhodeus amarus, fish that lay their eggs in the gill chambers of living freshwater mussels, females perform conspicuous behaviours associated with spawning that increases the probability of males performing ejaculatory behaviour and participating in a spawning. A significant positive association was detected between behaviour in which a female performs a spawning action but without releasing eggs, here termed 'deceptive female oviposition', and ejaculatory behaviour by courting males.

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Genetic linkage maps were constructed for large yellow croaker Pseudosciaena crocea (Richardson, 1846) using AFLP and microsatellite markers in an F-1 family. Five hundred and twenty-three AFLP markers and 36 microsatellites were genotyped in the parents and 94 F-1 progeny. Among these, 362 AFLP markers and 13 SSR markers followed the 1:1 Mendelian segregation ratio (P > 0.05). The female genetic map contained 181 AFLP and 7 microsatellite markers forming 24 linkage groups spanning 2959.1 cM, while the male map consisted of 153 AFLP and 8 microsatellite markers in 23 linkage groups covering 2205.7 cM. One sex linked marker was mapped to the male map and co-segregated with the AFLP marker agacta355, suggesting an XY-male determination mechanism and this may be useful in the breeding of monosex populations. (c) 2007 Elsevier B.V. All rights reserved.

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The open circuit voltage (V-oc) of n-i-p type hydrogenated amorphous silicon (a-Si:H) solar cells has been examined by means of experimental and numerical modeling. The i- and p-layer limitations on V-oc are separated and the emphasis is to identify the impact of different kinds of p-layers. Hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), optical transmittance and activation energy of dark-conductivity. The n-i-p a-Si:H solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of V-oc from 1.042 V to 0.369 V, under identical i- and n-layer conditions. It is found that the nanocrystalline silicon (nc-Si:H) p-layer with a certain nanocrystalline volume fraction leads to a higher V-oc. The optimum p-layer material for n-i-p type a-Si:H solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase. (c) 2006 Elsevier B.V. All rights reserved.

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The magnetic properties of spin-valve pinned by FeMn layer were investigated after it was annealed at different temperatures. Its property was dependent on the vacuum annealing temperature. The pinning field could be increased through annealing at a temporature lower than 200degreesC;the pinning field would reduce and other properties be deteriorated as the annealing temperature was higher than 200degreesC; the pinning effect lost and giantmagnetic resistance disappeared at 300degreesC. Based on the results of AES analysis it was concluded that the diffusion in spin-valve multilayer was along grain boundary.

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The open circuit voltage (V-oc) of n-i-p type hydrogenated amorphous silicon (a-Si:H) solar cells has been examined by means of experimental and numerical modeling. The i- and p-layer limitations on V-oc are separated and the emphasis is to identify the impact of different kinds of p-layers. Hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), optical transmittance and activation energy of dark-conductivity. The n-i-p a-Si:H solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of V-oc from 1.042 V to 0.369 V, under identical i- and n-layer conditions. It is found that the nanocrystalline silicon (nc-Si:H) p-layer with a certain nanocrystalline volume fraction leads to a higher V-oc. The optimum p-layer material for n-i-p type a-Si:H solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase. (c) 2006 Elsevier B.V. All rights reserved.

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网络分布计算环境下应用系统的需求多样化和复杂性的增长,要求位于中间件层次的Web应用服务器(web application server,简称WAS)从原来的尽力而为服务模型转变为服务质量(quality of service,简称QoS)保障模型,为具有不同需求的应用分别提供适宜的服务质量保障.目前的WAS系统在此方面仍然比较薄弱.OnceAS/Q是一个面向QoS的WAS系统,它以QoS规约为基础,为不同应用提供不同的QoS保障能力.OnceAS/Q实现了一个应用QoS保障框架,提供了一组QoS服务组件支持具有QoS需求的应用开发和运行.介绍了OnceAS/Q的体系结构和主要组件,详细阐述了两个关键问题,一是QoS规约的定义及其映射,另一个是面向QoS的服务组件和资源的动态重配.OnceAS/Q原型在Ecperf测试基准下,对其QoS保障能力进行了实验.实验数据表明,在较大规模的应用环境下,OnceAS/Q能够提供更好的服务质量,并且开销是可接受的.

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对白云凹陷地震资料的解释分析表明,该凹陷断裂构造以正断层和走滑断裂为

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提出基因重要度的概念,通过实验证明基因重要度对于单变量边缘分布算法(Unvaried Marginal Distribution Algo-rithm,UMOA)收敛的重要性.由此提出一种基于基因重要度的进化算法.该算法首先对组成染色体的各基因进行重要度排序,随后对重要度大的基因先进行收敛操作,每次收敛当前重要度最大的基因,直到所有基因全部收敛.实验数据表明,本算法的收敛速度更快,而且更容易求出满意解.

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通过改进时域有限差分(FDTD)法,计算和分析了二维光子晶体的缺陷模式。运用一维时域有限差分算法和线性插值法在总场散射场(TF-SF)连接边界引入入射平面波,采用完全匹配层(PML)技术对外行波进行了有效吸收。计算和分析结果表明,在光子晶体非对称方向入射的平面波能激发所有的缺陷模式,选取合适的探测点位置收集电场值,经快速傅里叶变换(FFT)能得到所有的共振峰值。另外,采用该方法研究了二维正方介质柱光子晶体缺陷模的共振频率与缺陷介质柱半径和介电常量之间的关系。结果表明通过改变缺陷的半径和介电常量大小可以在光子晶体禁带中一定的范围内调节缺陷模式的共振频率大小。

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通过对退火后FeMn钉扎自旋阀磁性的研究表明,真空退火对自旋阀的性质有影响。低于200 ℃的退火能有效的提高钉扎场;退火温度高于200 ℃时,自旋阀的钉扎场要下降,其他性能也恶化;在300 ℃时,钉扎场降为零,giant magnetoresistance (GMR)现象消失。俄歇电子能谱仪(AES)的结果表明,在自旋阀多层膜中存在着晶界扩散。

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A broadly tunable and high-power grating-coupled external cavity laser with a tuning range of more than 200 nm and a similar to 200-mW maximum output power was realized, by utilizing a gain device with the chirped multiple quantum-dot (QD) active layers and bent waveguide structure. The chirped QD active medium, which consists of QD layers with InGaAs strain-reducing layers different in thickness, is beneficial to the broadening of the material gain spectrum. The bent waveguide structure and facet antireflection coating are both effective for the suppression of inner-cavity lasing under large injection current.