Energy level analyses of even-parity J=1 and 2 Rydberg states of Sn I by multichannel quantum defect theory

This paper analyzes the energy levels along the even-parity J=1 and 2 Rydberg series of Sn I by multichannel quantum defect theory. A good agreement between theoretical and experimental energy levels was achieved. Below 59198 cm~(-1), a total of 85 and 23 new energy levels, respectively, in the J=1 and J=2 series, which cannot be measured previously by experiments, are predicted in this work. Based on the calculated admixture coefficients of each channel, interchannel interactions were discussed in detail. The results are helpful to understand the characteristics of configuration interaction among even-parity levels in Sn I.

掺Sn的In_20_3透明导电膜生长优先取向对其光电性能的影响

采用反应热蒸发法制备掺sn的In_20_3（ITO）透明导电膜，系统研究了ITO薄膜生长的优先取向对其光电性能的影响，结果表明，ITO薄膜（400）取向的优先生长对其透过率影响很小，但可明显增加载流子迁移率，从而有效降低了薄膜的方块电阻。在两个相同的薄膜硅／单晶硅太阳能电池上分别沉积（222）和（400）ITO优先取向膜，光电转换效率分别为10．3％和12．9％，表明（400）取向更有利于提高电池效率。经优化，最佳衬底温度（T_s）为225℃，最佳氧流量（fo_2）为4sccm。在优化的沉积条件下制备ITO薄膜，其电阻率可达到4.8x10~(-4)Ω·cm，可见波段的透过率大于90％，性能指数为3.8×10~(-2)□/Ω。

Observation of the resonant Raman behavior of individual single-walled carbon nanotubes

The different resonant Raman scattering process of single-walled carbon nanotubes (SWNTs) has been found between the Stokes and anti-Stokes sides of the radial breathing modes (RBMs), and this provides strong evidence that Raman spectra of some special diametric SWNTs are in resonance with their electronic transitions between the singularities in the one-dimensional electronic density of states in the valence and conduction bands, and other SWNTs axe beyond the resonant condition. Because of the coexistence of resonant and non-resonant Raman scattering processes for different diametric SWNTs, the relative intensity of each RBM does not reflect the proportion of a particular SWNT.

Determination of the interdiffusion coefficients of liquid Zn and Sn using Ta/Zn-Sn/Si trilayers

In this paper we present a new method for measuring diffusion coefficients in liquid metals under convection-less conditions with solid/liquid-liquid/solid trilayer. The advantage of this kind of trilayer is that effects from gravity-induced convection and Marangoni-convection can be omitted, so that the diffusion coefficient is determined more accurately. The Ta/Zn-Sn/Si trilayer were prepared with a multi-target ion-beam sputtering deposition technique and annealed in an electric furnace under an argon atmosphere. The interdiffusion of liquid zinc and tin at 500 degrees degree C was investigated. The diffusion concentration profiles were determined by energy dispersive spectroscopy. The interdiffusion coefficients range from 1.0x10(-6)cm(2)/s to 2.8x10(-6)cm(2)/s, which is less than previous values measured by capillary reservoir technique under 1g-environment where various convection exist. The precise interdiffusion coefficients of liquid zinc and tin result from the removing of disturbances of various kinds of convection.

35MeV／u~(36)Ar+~(112,124)Sn反应中中等质量碎片关联函数的入射道依赖

测量了35MeV／u36Ar+112,124Sn反应中小角关联出射的中等质量碎片(IMF)约化速度关联函数．结果表明36Ar+124Sn反应系统中的约化速度关联函数在小约化速度处的反关联程度比36Ar+112Sn反应系统中的强,表现出明显的入射道依赖性．考察出射粒子对的单核子总动量时,发现这种差异主要来自于高动量粒子对的贡献．用三体弹道理论模型MENEKA分别计算了两个系统的IMF发射时标,在36Ar+112Sn反应系统中约为150fm／c,而在36Ar+124Sn反应系统中,约为120fm／c．同位旋相关的量子分子动力学计算表明,36Ar+124Sn系统中IMF的发射时间谱比36Ar+112Sn系统略有前移,相应地,其中心密度从最高点随时间的下降亦比36Ar+112Sn系统略快．