Ultrafast optical Kerr effect in amorphous Ge10As40S30Se20 film induced by ultrashort laser pulses

The results of the femtosecond optical heterodyne detection of optical Kerr effect at 805 am with the 80 fs ultrafast pulses in amorphous Ge10As40S30Se20 film is reported in this Letter. The film shows an optical nonlinear response of 200 fs under ultrafast 80 fs-pulse excitation, and the values of real and imaginary parts of nonlinear susceptibility chi((3)) were 9.0 x 10(-12) esu and -4.0 x 10(-12) esu respectively. The large third-order nonlinearity and ultrafast response are attributed to the ultrafast distortion of the electron orbits surrounding the average positions of the nucleus of Ge, As, S and Se atoms. This Ge10As40S30Se20 chalcogenide glass would be expected as a promising material for optical switching technique.

Effect of bismuth oxide on the thermal stability and Judd-Ofelt parameters of Er 3(+)/Yb3(+) co-doped aluminophosphate glasses

The Er3+/Yb3+ co-doped glasses with compositions of xBi(2)O(3)-(65-x)P2O5-4Yb(2)O(3)-11Al(2)O(3)-5BaO-15Na(2)O (where x = 0, 2.5, 5, 7.5 and 10 mol%) were prepared using the normal melt quench technique. The optical absorption spectra of the glasses were recorded in the wavelength range 300-1700 nm. The effect of Bi2O3 content on the thermal stability and absorption spectra of glasses was investigated. In addition, the Judd-Ofelt parameters and oscillator strengths were calculated by employing Judd-Ofelt theory. It was observed that the positions of the fundamental absorption edge and cut-off wavelength shifted towards red as the content of Bi2O3 increased. However, there were no red shifts found both in the peak wavelength and in the center of mass wavelength of all absorption bands with Bi2O3 content increasing. The results of Judd-Ofelt theory analysis showed that Judd-Ofelt parameters Omega(t), (t = 2, 4, 6) changed sharply when Bi2O3 concentration exceeded 5 mol%. The variation trends of experimental oscillator strength were similar with those of Judd-Ofelt parameters as function of Bi2O3 concentrations. Moreover, differential scanning calorimetry experiments showed that the increases of Bi2O3 content weakened the network structure and then lowered the thermal stability of the glasses. The spontaneous emission probability A(rad), branching ratio beta and the radiative lifetime tau(rad) were also calculated and analyzed. The stimulated emission cross-section of Er3+ was calculated according to the McCumber theory. It was found that the stimulated emission cross-section of Er3+ was monotonically increases with Bi2O3 content increasing. (C) 2006 Elsevier B.V. All rights reserved.

Efficient laser oscillation of Yb : Y3Al5O12 single crystal grown by temperature gradient technique

Low-threshold and highly efficient continuous-wave laser performance of Yb:Y3Al5O12 (Yb:YAG) single crystal grown by a temperature gradient technique (TGT) was achieved at room temperature. The laser can be operated at 1030 and 1049 nm by varying the transmission of the output coupler. Slope efficiencies of 57% and 68% at 1049 and 1030 nm, respectively, were achieved for 10 at. % Yb:YAG sample in continuous-wave laser-diode pumping. The effect of pump power on the laser emission spectrum of both wavelengths is addressed. The near-diffraction-limited beam quality for different laser cavities was achieved. The excellent laser performance indicates that TGT-grown Yb:YAG crystals have very good optical quality and can be potentially used in high-power solid-state lasers.

Effect of annealing and gamma irradiation on undoped and Eu3+-doped Y2SiO5 single crystals

The absorption spectra of the undoped Y2SiO5 and Eu3+-doped Y2SiO5 crystals grown by the Czochralski technique were compared before and after annealing and, similarly, the unannealed and annealed crystals after gamma-ray irradiation. The absorption bands of Eu2+ ions with peaks at 300 and 390 nm were observed in the as-grown Y2SiO5:Eu3+ crystal. These peaks were more intense in H-2-annealed and irradiated Y2SiO5:Eu3+ crystals. The additional absorption peaks at 260 and 320-330 nm which were attributed to F color centers and O- hole centers were observed in irradiated undoped Y2SiO5 and Y2SiO5:Eu3+ crystals, respectively. (c) 2005 Elsevier B.V. All rights reserved.

Coupling between elytra of some beetles: Mechanism, forces and effect of surface texture

Lightweight materials, structures and coupling mechanisms are very important for realizing advanced flight vehicles. Here, we obtained the geometric structures and morphologies of the elytra of beetles and ascertained its coupling zone by using the histological section technique and SEM. We set up a three-dimensional motion observing system to monitor the opening and closing behaviour of elytra in beetles and to determine the motion mechanism. We constructed a force measuring system to measure the coupling forces between elytra. The results show that elytra open and close by rotating about a single axle, where the coupling forces may be as high as 160 times its own bodyweight, the elytra coupling with the tenon and mortise mechanism, surface texture and opening angle between elytra heavily influence the coupling forces. These results may provide insights into the design mechanism and structure for future vehicles of flight.

Effect of antibiotics on development in vitro of hamster pronucleate ova

Antibiotics are commonly added to embryo culture media, but effects on embryo development have not been examined thoroughly. Hamster ova were used to investigate whether penicillin, streptomycin or gentamicin affect embryo development in vitro. Ova were collected 10 h post activation by spermatozoa in vivo and cultured in five treatments: 1) Control: chemically-defined medium HECM-9 with no antibiotics; 2) HECM-9 with 100 IU/mL, penicillin; 3) HECM-9 with 50 mug/mL streptomycin; 4) HECM-9 with 10 mug/mL,gentamicin and 5) HECM-9 with both 100 IU/mL penicillin and 50 mug/mL streptomycin. Individually, penicillin, streptomycin and gentamicin did not affect embryo development to the 8-cell stage at 58 h post oocyte activation, or morula/blastocyst stages, or blastocysts alone at 82 h post activation. However, when penicillin and streptomycin were both present in the culture medium the percentages of 8-cell embryos at 58 h and blastocysts at 82 h were significantly lower than the control. No antibiotic treatment improved hamster embryo development in vitro. We caution against the use of penicillin and streptomycin together for hamster embryo culture, and show that it is not necessary to include any antibiotics in embryo culture media for up to 72 h if proper sterile technique is used with an oil overlay. (C) 2000 by Elsevier Science Inc.

The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots

The refractive nonlinearities of InAs/GaAs quantum dots under a dc electric field at photon energies above its band gap energy have been studied using the reflection Z-scan technique. The effect of the dc electric field on the nonlinear response of InAs/GaAs quantum dots showed similar linear and quadratic electro-optic effects as in the linear response regime at low fields. This implies that the electro-optic effect in the nonlinear regime is analogous to the response in the linear regime for semiconductor quantum dots. Our experimental results show the potential for voltage tunability in InAs quantum dot-based nonlinear electro-optic devices.

Investigation of Electronic Energy Levels in InAs Quantum Dot with Shape of Lens by Using B-Spline Technique

The dependence of the electronic energy levels on the size of quantum dots (QDs) with the shape of spherical lens is studied by using the B-spline technique for the first time. Within the framework of the effective-mass theory, the values of electronic energy levels are obtained as a function of the height, radius and volume of QDs, respectively. When the height or radius of QDs increases, all the electronic energy levels lower, and the separations between the energy levels decrease. For lens-shape QDs, height is the key factor in dominating the energy levels comparing with the effect of radius, especially in dominating the ground-state level. These computational results are compared with that of other theoretical calculation ways. The B-spline technique is proved to be an effective way in calculating the electronic structure in QDs with the shape of spherical lens.

The effect of a combined InAlAs and GaAs strained buffer layer on the structure and optical property of InAs quantum dots

The character of InAs quantum dots (QD) directly deposited on a combined InAlAs-GaAs (XML) strained buffer layer (SBL) has been investigated. This growth technique realizes high-density QD (5.88 x 10(10) cm(-2)) by changing the thickness of GaAs in InAlAs-GaAs SBL. The dependence of the density and the aspect ratio of QD on the GaAs thickness has been discussed in detail. The photoluminescence (PL) measurements demonstrate an obvious redshift with the increase of GaAs thickness. In addition, the deposition of InAs QDs grown on the combined InAlAs-GaAs SBL has an important effect of the QD properties. The ordered QD array can be observed from the sample deposited by atomic layer epitaxy, of which the PL peak shows an obvious redshift in comparison to the molecular beam epitaxy (MBE) QDs when the GaAs thicknesses are equal. (c) 2004 Elsevier B.V. All rights reserved.

Effect of the variation of temperature on the structural and optical properties of ZnO thin films prepared on Si (111) substrates using PLD

ZnO thin films were prepared on Si (1 11) substrates at various temperatures from 250 to 700 degrees C using pulsed laser deposition (PLD) technique in order to investigate the structural and optical properties of the films. The structural and morphological properties of the films were investigated by XRD and SEM measurements, respectively. The quality of the films was improved with the increase of the temperature. By XRD patterns the FWHMs of the (0 0 2) peaks of the ZnO films became narrower when the temperatures were above 500 degrees C. The FWHMs of the peaks of (0 0 2) of the films were as narrow as about 0. 19 degrees when films were grown at 650 and 700 degrees C. This indicates the superior crystallinity of the films. The optical properties of the films were studied by photoluminescence spectra using a 325 nm He-Cd laser. The two strongest UV peaks were found at 377.9 nm from ZnO films grown at 650 and 700 degrees C. This result is consistent with that of the XRD investigation. Broad bands in visible region from 450 to 550 nm were also observed. Our works suggest that UV emissions have close relations with not only the crystallinity but also the stoichiometry of the ZnO films. (c) 2005 Elsevier Ltd. All rights reserved.

Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density

In order to obtain greater radiation hardness for SIMOX (separation by implanted oxygen) materials, nitrogen was implanted into SIMOX BOX (buried oxide). However, it has been found by the C-V technique employed in this work that there is an obvious increase of the fixed positive charge density in the nitrogen-implanted BOX with a 150 out thickness and 4 x 10(15) cm(-2) nitrogen implantation dose, compared with that unimplanted with nitrogen. On the other hand, for the BOX layers with a 375 nm thickness and implanted with 2 x 10(15) and 3 x 10(15) cm(-2) nitrogen doses respectively, the increase of the fixed positive charge density induced by implanted nitrogen has not been observed. The post-implantation annealing conditions are identical for all the nitrogen-implanted samples. The increase in fixed positive charge density in the nitrogen-implanted 150 nm BOX is ascribed to the accumulation of implanted nitrogen near the BOX/Si interface due to the post-implantation annealing process according to SIMS results. In addition, it has also been found that the fixed positive charge density in initial BOX is very small. This means SIMOX BOX has a much lower oxide charge density than thermal SiO2 which contains a lot of oxide charges in most cases.

Effect of disorder on self-collimated beam in photonic crystal

We report a numerical analysis of various types of disorder effects on self-collimated beam in two-dimensional photonic crystal. Finite-difference time-domain (FDTD) method is used to simulate the process by using a pulse propagation technique. The position disorders along the directions parallel and perpendicular to the incidence are considered. We show that random disorder along the perpendicular direction will have a lesser effect on the performance of the dispersion waveguides than those along the parallel direction. Furthermore, the self-collimation waveguide (SCW) has new characteristics when compared with the photonic crystal line defect waveguide. (c) 2006 Elsevier B.V. All rights reserved.

Strain accommodation of 3C-SiC grown on hydrogen-implanted Si (001) substrate

The hydrogen-implanted Si substrate has been used for the fabrication of the "compliant substrate", which can accommodate the mismatch strain during the heteroepitaxy. The compliance of the substrate can be modulated by the energy and dose of implanted hydrogen. In addition, the defects caused by implantation act as the gettering center for the internal gettering of the harmful metallic impurities. Compared with SiC films growth on substrate without implantation. all the measurements indicated that the mismatch strains in the SiC films grown on this substrate have been released and the crystalline qualities have been improved. It is a practical technique used for the compliant substrate fabrication and compatible with the semiconductor industry. (C) 2003 Elsevier B.V. All rights reserved.

Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique

In this paper we propose a new method for measuring the thickness of the GaN epilayer, by using the ratio of the integrated intensity of the GaN epilayer X-ray diffraction peaks to that of the sapphire substrate ones. This ratio shows a linear dependence on the GaN epilayer thickness up to 2 mum. The new method is more accurate and convenient than those of using the relationship between the integrated intensity of GaN epilayer diffraction peaks and the GaN thickness. Besides, it can eliminate the absorption effect of the GaN epilayer.

Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates

Semi-insulating gallium arsenide single crystal grown in space has been used in fabricating low noise field effect transistors and analog switch integrated circuits by the direct ion-implantation technique. All key electrical properties of these transistors and integrated circuits have surpassed those made from conventional earth-grown gallium arsenide. This result shows that device-grade space-grown semiconducting single crystal has surpassed the best terrestrial counterparts. (C) 2001 American Institute of Physics.