SCANNING-TUNNELING-MICROSCOPY (STM) AND LATERAL FORCE MICROSCOPY (LFM) INVESTIGATION OF THE STRUCTURE AND CHARACTER OF CONDUCTIVE POLYPYRROLE FILM

Polypyrrole doped with p-toluenesulfonate was electropolymerized onto highly oriented pyrolytic graphite (HOPG), glassy carbon (GC) and Pt electrode surfaces under the same experimental conditions. The resulting films were studied by scanning tunneling m

ELECTROCHEMICAL SCANNING-TUNNELING-MICROSCOPY

An ECSTM apparatus with an ideal tip using a homemade SSX-1A STM instrument has been constructed. STM and ECSTM tips were made by electrochemical etching and insulating with paraffin, silicon rubber or epoxy resin under an optical microscope. In situ imag

STM和ECSTM探针的制备及探针对图象的影响

本文综述了扫描隧道显微镜(STM)以及现场电化学扫描隧道显微镜(ECSTM)探针的制备方法,并对相应探针制备方法的优缺点以及探针性能对图象影响方面的进展进行了评述。

Electrochemical, spectroscopic and SPM evidence for the controlled formation of self-assembled monolayers and organised multilayers of ferrocenyl alkyl thiols on Au(111)

Organised multilayers were formed from the controlled self-assembly of ferrocene alkyl thiols on Au(111) surfaces. The control was accomplished by increasing the concentration of the thiol solutions used for the assembly. Cyclic voltammetry, ellipsometry, scanning probe microscopy (STM and AFM) and in situ FTIR spectroscopy were used to probe the differences between mono- and multilayers of the same compounds. Electrochemical desorption studies confirmed that the multilayer structure is attached to the surface via one monolayer. The electrochemical behaviour of the multilayers indicated the presence of more than one controlling factor during the oxidation step, whereas the reduction was kinetically controlled which contrasts with the behaviour of monolayers, which exhibit kinetic control for the oxidation and reduction steps. Conventional and imaging ellipsometry confirmed that multilayers with well-defined increments in thickness could be produced. However, STM indicated that at the monolayer stage, the thiols used promote the mobility of Au atoms on the surface. It is very likely that the multilayer structure is held together through hydrogen bonding. To the best of out knowledge, this is the first example of a controlled one-step growth of multilayers of ferrocenyl alkyl thiols using self-assembly techniques.

The Stability of a Vertical Single-Walled Carbon Nanotube Under Its Own Weight

It has been reported recently that single carbon nanotubes were attached to AFM tips to act as nanotweezers. In order to investigate its stability, a vertical single-walled carbon nanotube (SWCNT) under its own weight is studied in this paper. The lower end of the carbon nanotube is clamped. Firstly the governing dimensionless numbers are derived by dimensional analysis. Then the theoretical analysis based on an elastic column model is carried out. Two ratios, I.e., the ratio of half wall thickness to radius (t=R) and the ratio of gravity to elastic resilience ($\rho$gR=E), and their influences on the ratio of critical length to radius are discussed. It is found that the relationship between the critical ratio of altitude to radius and ratio of half thickness to radius is approximately linear. As the dimensionless number $\rho$gR=E increases, the compressive force per unit length (weight) becomes larger, thus critical ratio of altitude to radius must become smaller to maintain stability. At last the critical length of SWCNT is calculated. The results of this paper will be helpful for the stability design of nanotweezers-like nanostructures.

Plane strain asymptotic fields for cracks terminating at the interface between elastic and pressure-sensitive dilatant materials

The plane strain asymptotic fields for cracks terminating at the interface between elastic and pressure-sensitive dilatant material are investigated in this paper. Applying the stress-strain relation for the pressure-sensitive dilatant material, we have obtained an exact asymptotic solution for the plane strain tip fields for two types of cracks, one of which lies in the pressure-sensitive dilatant material and the other in the elastic material and their tips touch both the bimaterial interface. In cases, numerical results show that the singularity and the angular variations of the fields obtained depend on the material hardening exponent n, the pressure sensitivity parameter mu and geometrical parameter lambda.

Singularity of dynamic stress fields around an interface crack between viscoelastic bodies

The singular nature of the dynamic stress fields around an interface crack located between two dissimilar isotropic linearly viscoelastic bodies is studied. A harmonic load is imposed on the surfaces of the interface crack. The dynamic stress fields around the crack are obtained by solving a set of simultaneous singular integral equations in terms of the normal and tangent crack dislocation densities. The singularity of the dynamic stress fields near the crack tips is embodied in the fundamental solutions of the singular integral equations. The investigation of the fundamental solutions indicates that the singularity and oscillation indices of the stress fields are both dependent upon the material constants and the frequency of the harmonic load. This observation is different from the well-known -1/2 oscillating singularity for elastic bi-materials. The explanation for the differences between viscoelastic and elastic bi-materials can be given by the additional viscosity mismatch in the case of viscoelastic bi-materials. As an example, the standard linear solid model of a viscoelastic material is used. The effects of the frequency and the material constants (short-term modulus, long-term modulus and relaxation time) on the singularity and the oscillation indices are studied numerically.

Computation of stress intensity factors by the sub-region mixed finite element method of lines

Based on the sub-region generalized variational principle, a sub-region mixed version of the newly-developed semi-analytical 'finite element method of lines' (FEMOL) is proposed in this paper for accurate and efficient computation of stress intensity factors (SIFs) of two-dimensional notches/cracks. The circular regions surrounding notch/crack tips are taken as the complementary energy region in which a number of leading terms of singular solutions for stresses are used, with the sought SIFs being among the unknown coefficients. The rest of the arbitrary domain is taken as the potential energy region in which FEMOL is applied to obtain approximate displacements. A mixed system of ordinary differential equations (ODEs) and algebraic equations is derived via the sub-region generalized variational principle. A singularity removal technique that eliminates the stress parameters from the mixed equation system eventually yields a standard FEMOL ODE system, the solution of which is no longer singular and is simply and efficiently obtained using a standard general-purpose ODE solver. A number of numerical examples, including bi-material notches/cracks in anti-plane and plane elasticity, are given to show the generally excellent performance of the proposed method.

Elastic-plastic finite element analyses of short cracks

Stress and strain distributions and crack opening displacement characteristics of short cracks have been studied in single edge notch bend and centre cracked panel specimens using elastic–plastic finite element analyses incorporating both a non strain hardening and a power law hardening behaviour. J contour integral solutions to describe stress strain conditions at crack tips for short cracks differ from those for long cracks. The analyses show that (i) short cracks can propagate at stress levels lower than those required for long cracks and (ii) a two-parameter description of crack tip fields is necessary for crack propagation.

关于科技论文写作的一点粗浅体会

科技论文写作对总结科学研究的创新发现是至关重要的。本文作者对如何撰写或写好科技论文,从论文写作的基本元素及常见问题等方面言简意赅地提出了很有意义的见解。

低密度台阶形闪耀光栅的制作

介绍了制作低密度闪耀光栅的过程,在制作时,对传统的制作过程进行了改进,有效提高了制作质量。以40μm闪耀光栅为例介绍了制作的过程,得到了良好的光栅表面形貌,并且闪耀级次的衍射效率达到了70%以上。相比传统的制作方法,效率提高了5%～10%。对比了理论上的衍射效率,分析了实验误差,发现把存在对准误差的光栅进行处理将会有效地提高其衍射效率,为进一步提高闪耀光栅的衍射效率提供了依据。

DNA三链结构模型和能力学研究

该文按照用 STM 得到的一种变性 DNA 三链辫状结构图象, 用分子建筑术分别构建了三链辫状结构和三链螺旋结构的分子模型. 经过运用共轭梯度法优化后, 作了能量分析, 进而讨论了它们的稳定性和结构特征。

Theoretical studies on conformation comparison of braid-like and triplex DNA

Based on the experimental data of scanning tunneling microscopy (STM), models of three-stranded braid-like DNAs composed by three kinds of base triplets AAA, TAT and GCA were constructed. We investigated the braid-like DNAs and their comparative tripler DNAs using a molecular mechanics method. The three strands of braid-like DNAs are proven equivalent, while those of tripler DNAs are not. The conformational energies for braid-like DNAs were found to be higher than that for tripler DNAs. Each period in one strand of braid-like DNA has 18 nucleotides, half of which are right-handed, while the other half are left-handed. Additional discussions concerning sugar puckering modes and the H-bonds are also included. (C) 1999 Elsevier Science B.V. All rights reserved.

Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy

Thick nonpolar (10 (1) over bar0) GaN layers were grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) using magnetron sputtered ZnO buffers, while semipolar (10 (1) over bar(3) over bar) GaN layers were obtained by the conventional two-step growth method using the same substrate. The in-plane anisotropic structural characteristics and stress distribution of the epilayers were revealed by high. resolution X-ray diffraction and polarized Raman scattering measurements. Atomic force microscopy (AFM) images revealed that the striated surface morphologies correlated with the basal plane stacking faults for both (10 (1) over bar0) and (10 (1) over bar(3) over bar) GaN films. The m-plane GaN surface showed many triangular-shaped pits aligning uniformly with the tips pointing to the c-axis after etching in boiled KOH, whereas the oblique hillocks appeared on the semipolar epilayers. In addition, the dominant emission at 3.42eV in m-plane GaN films displayed a red shift with respect to that in semipolar epilayers, maybe owing to the different strain states present in the two epitaxial layers. [DOI: 10.1143/JJAP.47.3346]

Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy

Epitaxial growth of InN on GaN(0001) by plasma-assisted molecular-beam epitaxy is investigated over a range of growth parameters including source flux and substrate temperature. Combining reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM), we establish a relationship between film growth mode and the deposition condition. Both two-dimensional (2D) and three-dimensional (3D) growth modes of the film are observed. For 2D growth, sustained RHEED intensity oscillations are recorded while STM reveals 2D nucleation islands. For 3D growth, less than three oscillation periods are observed indicating the Stranski-Krastanov (SK) growth mode of the film. Simultaneous measurements of (reciprocal) lattice constant by RHEED suggest a gradual relaxation of the strain in film, which commences during the first bilayer (BL) deposition and almost completes after 2-4 BLs. For SK growth, 3D islanding initiates after the strain has mostly been relieved, presumably by dislocations, so the islands are likely strain free. (C) 2002 American Institute of Physics.