1.55-mu m InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

High-performance InGaAs/InGaAlAs multiple-quantum-well vertical-cavity surface-emitting lasers (VCSELs) with lnGaAlAs/InP distributed Bragg reflectors are proposed for operation at the wavelength of 1.55 mum. The lasers have good heat diffusion characteristic, large index contrast in DBRs, and weak temperature sensitivity. They could be fabricated either by metal-organic chemical vapor deposition (MOCVD) or by molecular beam epitaxy (MBE) growth. The laser light-current characteristics indicate that a suitable reflectivity of the DBR on the light output side in a laser makes its output power increase greatly and its lasing threshold current reduce significantly, and that a small VCSEL could output the power around its maximum for the output mirror at the reflectivity varying in a broader range than a large VCSEL does. (C) 2004 Elsevier Ltd. All rights reserved.

Absorption characteristic and nonvolatile holographic recording in LiNbO3 : Cr : Cu crystals

The absorption characteristic of lithium niobate crystals doped with chromium and copper (Cr and Cu) is investigated. We find that there are two apparent absorption bands for LiNbO3:Cr:Cu crystal doped with 0.14 wt.% Cr2O3 and 0.011 wt.% CuO; one is around 480 nm, and the other is around 660 nm. With a decrease in the doping composition of Cr and an increase in the doping composition of Cu, no apparent absorption band in the shorter wavelength range exists. The higher the doping level of Cr, the larger the absorbance around 660 nm. Although a 633 nm red light is located in the absorption band around 660 nm, the absorption at 633 nm does not help the photorefractive process; i.e., unlike other doubly doped crystals, for example, LiNbO3:Fe:Mn crystal, a nonvolatile holographic recording can be realized by a 633 nm red light as the recording light and a 390 nm UV light as the sensitizing light. For LiNbO3:Cr:Cu crystals, by changing the recording light from a 633 nm red light to a 514 nm green light, sensitizing with a 390 nm UV light and a 488 nm blue light, respectively, a nonvolatile holographic recording can be realized. Doping the appropriate Cr (for example, N-Cr = 2.795 X 10(25)m(-3) and N-Cr/N-Cu = 1) benefits the improvement of holographic recording properties. (c) 2005 Optical Society of America.

Laser beam automatic alignment in multipass amplifier

A laser beam automatic alignment system is applied in a multipass amplifier of the SG-III prototype laser. Considering the requirements of the SG-III prototype facility, by combining the general techniques of the laser beam automatic alignment system, according to the image relayed of the pinholes in the spatial filter, and utilizing the optical position and the spatial distribution of the four pinholes of the main spatial filter in the multipass amplifier of the SG-III prototype, a reasonable and optimized scheme for automatic aligning multipass beam paths is presented. It is demonstrated on the multipass amplifier experimental system. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

图像处理在光路自动准直系统中的应用

光路自动准直系统应用于惯性约束聚变的高功率激光装置中的光束自动调整。图像处理是光路自动准直的关键技术之一。针对神光Ⅲ原型装置，结合阈值化、重心法、中值滤波和圆拟合等多种不同的图像处理方法设计了一套合理的准直方案，并且在模拟实验平台上进行了实验验证。实验结果表明，光路自动准直系统能够在15min之内顺利完成光路的自动调整，光束近场调整精度优于近场光斑的±0．5％，光束远场调整精度≤±0．3″，满足了原型装置的总体要求。

ICF靶场中光束口径与列阵间隔的研究

从靶场反射镜架模块的机械结构设计布局所需几何空间的角度出发，根据大口径、列阵器件的特殊要求，给出符合“神光Ⅲ”装置总体技术要求的ICF靶场光束口径与列阵间隔之间的关系，得出靶场△纵、△横应满足的公式．

ICF中可调法布里-珀罗滤波器间距稳定度研究

在神光Ⅱ第9路ICF高功率激光装置中，采用可调法布里-珀罗（F-P）滤波器对幅度调制效应进行补偿，根据补偿装置的技术要求，提出-种应用nm量级精度的电容式位移传感器对可调F-P滤波器间距稳定度进行监控的系统，详细论述了监控系统的结构与工作原理。给出了电容式位移传感器的驱动电路及数据处理与控制软件的设计方案，并对电容式位移传感器的精度进行了标定。实验结果表明，该位移监控系统能够使可调F—P滤波器的间距稳定度保持在15nm／h以内，使幅度调制效应的调制深度优于4％。

神光Ⅱ升级装置终端光学组件的排布设计

设计高功率激光装置靶场终端光学组件(FOA)时考虑的重要因素是鬼像对光学元件的破坏。由于神光Ⅱ升级装置(SG-Ⅱ-U)的输出能量高、靶场空间小、鬼像分布情况复杂,导致了终端光学组件的设计难度很高。用自主研发的鬼像控制设计软件对神光Ⅱ升级装置靶场终端光学组件排布进行设计,给出了进行鬼像控制设计时需考虑的设计因素,并对比研究了两种靶场终端光学组件设计方案的优缺点,最后结合神光Ⅱ升级装置的特点,优化设计出神光Ⅱ升级装置靶场终端光学组件的最终排布方案。

HfO2 膜料中的杂质对薄膜损伤及性能的影响

By analysis of impurity elements in HfO2 coating material, the influence of main impurity elements on the characteristic of coatings were studied. The results indicate that the metal elements and absorptive dielectric elements damage the HfO2 coatings. The more the Zr element content is, the more the absorption is for the coatings in ultraviolet wave. The negative ion element will become the gas source center and form an ejection in the process of evaporation of coating material, so decrease the damage threshold of the coatings.