Quantum interference in laser-induced nonsequential double ionization in diatomic molecules: Role of alignment and orbital symmetry

We address the influence of the orbital symmetry and the molecular alignment with respect to the laser-field polarization on laser-induced nonsequential double ionization of diatomic molecules, in the length and velocity gauges. We work within the strong-field approximation and assume that the second electron is dislodged by electron-impact ionization, and also consider the classical limit of this model. We show that the electron-momentum distributions exhibit interference maxima and minima due to electron emission at spatially separated centers. The interference patterns survive integration over the transverse momenta for a small range of alignment angles, and are sharpest for parallel-aligned molecules. Due to the contributions of the transverse-momentum components, these patterns become less defined as the alignment angle increases, until they disappear for perpendicular alignment. This behavior influences the shapes and the peaks of the electron-momentum distributions.

Nano-modification inside transparent materials by femtosecond laser single beam

Periodic nanostructures along the polarization direction of light are observed inside silica glasses and tellurium dioxide single crystal after irradiation by a focused single femtosecond laser beam. Backscattering electron images of the irradiated spot inside silica glass reveal a periodic structure of stripe-like regions of similar to 20 nm width with a low oxygen concentration. In the case of the tellurium dioxide single crystal, secondary electron images within the focal spot show the formation of a periodic structure of voids with 30 nm width. Oxygen defects in a silica glass and voids in a tellurium dioxide single crystal are aligned perpendicular to the laser polarization direction. These are the smallest nanostructures below the diffraction limit of light, which are formed inside transparent materials. The phenomenon is interpreted in terms of interference between the incident light field and the electric field of electron plasma wave generated in the bulk of material.

Cathodoluminescence study of GaN-based film structures

GaN films grown on sapphire substrate with an emphasis on epitaxial lateral overgrown (ELOG) layers with an array of rhombic shaped mask area as well as InGaN/GaN MQW laser diode layer structures were investigated by cathodoluminescence (CL) spectroscopy and CL imaging at room and low temperatures. The microscopic imaging with a high-spatial resolution clearly reveals the distribution of threading dislocations and point defects in ELOG GaN films. The secondary electron and CL data measured on cleaved faces of laser diodes are analyzed in consideration with luminescence mechanisms in semiconductor heterostructures and around the p - n junction, providing important information on the defects and carrier dynamics in laser diode devices.

Photoelectric characteristics of metal/InGaN/GaN heterojunction structure

A heterojunction structure photodetector was fabricated by evaporating a semitransparent Ni/Au metal film oil the InGaN/GaN structure. The photocurrent (PC) spectra show that both the Schottky junction (NiAu/InGaN) and the InGaN/GaN isotype heterojunction contribute to the PC signal which suggests that two junctions are connected in series and result in a broader spectral response of the device. Secondary electron, cathodoluminescence and electron-beam-induced current images measured from the same area of the edge surface clearly reveal the profile of the layer structure and distribution of the built-in electric field around the two junctions. A band diagram of the device is drawn based oil the consideration of the polarization effect at the InGaN/GaN interface. The analysis is consistent with the physical mechanism of a tandem structure of two junctions connected in series.

Photoluminescence energy and fine structure splitting in single quantum dots by uniaxial stress

We report a photoluminescence (PL) energy red-shift of single quantum dots (QDs) by applying an in-plane compressive uniaxial stress along the [110] direction at a liquid nitrogen temperature. Uniaxial stress has an effect not only on the confinement potential in the growth direction which results in the PL shift, but also on the cylindrical symmetry of QDs which can be reflected by the change of the full width at half maximum of PL peak. This implies that uniaxial stress has an important role in tuning PL energy and fine structure splitting of QDs.

Magnetic-field-induced nonthermal occupation of higher subbands in a three-barrier tunneling structure

When injected electrons in a quantum well first experience an intersubband relaxation process before their escaping by tunneling through a double-barrier structure behind, the magnetic suppression of intersubband LO or LA phonon scattering can give rise to a noticeable nonthermal occupation in higher-lying subbands. That is clearly verified by the relative intensity ratio of the interband photoluminescence spectra for E-2-HH1 and E-1-HH1 transitions. The observed phenomenon may provide an effective method for controlling intersubband scattering rate, a central issue in so-called quantum cascade lasers, and facilitating the population inversion between subbands in quantum wells.

Occupation modulation of higher subbands in a three-barrier tunnelling structure with a magnetic field

We verify that the magnetic suppression of intersubband LO or LA phonon scattering can give rise to a noticeable nonthermal occupation in higher-lying subbands. This is clearly determined by the relative intensity ratio of the interband photoluminescence spectra for the E-2 - HH1 and E-1 - HH1 transitions. The observed phenomenon may provide an effective method to control the intersubband scattering rate, which is a key factor of the so-called quantum cascade lasers. This is helpful for the population inversion between both the subbands in quantum wells.

DETERMINATION OF THE SUBBAND ENERGY IN THE V-SHAPED POTENTIAL WELL OF DELTA-DOPED GAAS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

Using deep level transient spectroscopy (DLTS) the conduction-subband energy levels in a V-shaped potential well induced by Si-delta doping in GaAs were determined. Self-consistent calculation gives four subbands in the well below the Fermi level. Experimentally, two DLTS peaks due to electron emission from these subbands were observed. Another two subbands with low electron concentration are believed to be merged into the adjacent DLTS peak. A good agreement between self-consistent calculation and experiment was obtained. (C) 1994 American Institute of Physics.

DETERMINATION OF THE CONDUCTION-BAND OFFSET OF A SINGLE ALGAAS BARRIER LAYER USING DEEP-LEVEL TRANSIENT SPECTROSCOPY

The tunneling from an AlGaAs confined thin layer to a GaAs layer in the GaAs/Al0.33Ga0.67As/GaAs structure during the trapped electron emission from deep level in the AlGaAs to its conduction band has been observed by deep level transient spectroscopy. With the aid of the tunneling effect, the conduction-band offset DELTAE(c) was determined to be 0.260 eV, corresponding to 63% of DELTAE(g). A calculation was also carried out based on this tunneling model by using the experimental value of DELTAE(c) = E2 - E1 = 0. 260 eV, and good agreement between the experimental and calculated curves is obtained.

SHEAR-DEFORMATION-POTENTIAL CONSTANT OF THE CONDUCTION-BAND MINIMA OF SI - EXPERIMENTAL-DETERMINATION BY THE DEEP-LEVEL CAPACITANCE TRANSIENT METHOD

The shear-deformation-potential constant XI-u of the conduction-band minima of Si has been measured by a method which we called deep-level capacitance transient under uniaxial stress. The uniaxial-stress (F) dependence of the electron emission rate e(n) from deep levels to the split conduction-band minima of Si has been analyzed. Theoretical curves are in good agreement with experimental data for the S0 and S+ deep levels in Si. The values of XI-u obtained by the method are 11.1 +/- 0.3 eV at 148.9 K and 11.3 +/- 0.3 eV at 223.6 K. The analysis and the XI-u values obtained are also valuable for symmetry determination of deep electron traps in Si.

Kinetic energies of C-n(+) (n <= 58) fragment ions produced by nanosecond laser impact on C-60

Laser-induced fragmentation of C-60 has been studied using a time-of-flight mass spectrometric technique. The average kinetic energies of fragment ions C-n(+) (n <= 58) have been extracted from the measured full width at half maximum (FWHM) of ion beam profiles. The primary formation mechanism of small fragment ion C-n(+) (n < 30) is assumed to be a two-step fragmentation process: C60 sequential decay to unstable C-30(+) ion and the binary fission of C-30(+). Considering a second photo absorption process in the later part of laser pulse duration, good agreement is achieved between experiment and theoretical description of photoion formation. (C) 2009 Elsevier B. V. All rights reserved.

纳秒激光诱导C60分子碎裂中轻碎片离子C+n(n＜30)的产生机理研究

The time of flight mass spectrometric technique was used to determine the initial mean kinetic energy of small fragment ions C-n(+) (n <= 11) produced from C-60 excited by 532 nm nanosecond laser pulses. The measured kinetic energy shows little variation with the fragment mass and the laser fluence in a broad range. Based on the assumption that C-30(+) is produced predominantly by a single electron emission followed by successive C-2 evaporation from hot C-60 in the nanosecond laser field, the formation of small fragments is interpreted as the complete breakup of the unstable C-30(+) cage structure. The interpretation is consistent with the previously observed results.

高电荷态离子与固体表面作用的离子溅射和电子发射的实验研究

高电荷态离子与固体表面相互作用的研究是目前国际上广受关注的热点研究领域之一。本论文详细介绍了在兰州重离子加速器国家实验室ECR离子源上建成的高电荷态离子表面物理实验平台；着重叙述了在实验平台上完成的高电荷态离子在固体表面引起的离子溅射和电子发射的研究。我们用初动能Ek=216～720keV的高电荷态Pb36+离子和初动能为Ek=144～288keV的Arq+（q =11～16）离子以不同入射角度(Ψ＝15º～80º)作用于Nb、Si和SiO2表面，通过研究离子溅射产额与入射离子初动能、势能（电荷态）和入射角度的关系，得到了以下结论：离子溅射产额与炮弹离子的势能沉积和动能作用有关；对Ar离子，电荷态从11增加到16时，离子溅射产额是随之增长的。而对Pb36＋离子，表面离子溅射产额随入射离子初动能的变化关系跟核阻止能损随入射离子初动能的变化关系是一致的，离子溅射产额与核阻止能损是线性相关的。认为高电荷态引发的表面离子溅射过程是势能沉积作用与线性级联碰撞过程协同作用的结果。我们还测量了Heq+(q=1,2, Ek=12keV～48keV)，Neq+(q=2～8, Ek=18～192keV)，Arq+(q=3～12, Ek=72keV)离子垂直作用于Si, W, Au表面产生的电子发射产额。得到了纯粹势能电子发射产额与入射离子势能的定量关系，势能电子产额随入射离子势能的增加而线性增加，势能每增加1eV，单离子电子发射产额增加0.0088（以初动能为42keV的Neq+入射到W表面为例）。势能电子发射增量跟靶的性质有关，W表面对势能变化的响应最剧烈，其次是Si表面。通过引入纯粹动能电子产额与电子能损的比值B分析和研究了动能电子发射，随着入射离子原子序数和初动能的增加，B因子有缓慢降低的趋势；B因子与靶材料密切相关，Au靶的B因子明显大于Si靶和W靶；我们还首次把B因子的研究扩展到高电荷态离子领域，认为B因子与入射离子的势能（电荷态）无关

Direct observation of subsurface oxygen on the defects of Pd(100)

Oxygen adsorption and desorption on a Pd(100) surface with a mesoscopic defect were studied by photoemission electron microscopy (PEEM). The defect surface, with an area of approximately 200 x 60 mu m(2), behaved differently from the perfect Pd(100) surface towards the adsorption of oxygen. When saturated, both surface oxygen and subsurface oxygen coexisted on the defect surface, whereas only surface oxygen was present on the Pd(100) surface. Upon heating, subsurface oxygen diffused back to the surface and desorbed with surface oxygen at the same time. The difference in oxygen adsorption ability between the defect surface and the perfect Pd(100) surface can be attributed to different structures of these two surfaces. (C) 1999 Elsevier Science B.V. All rights reserved.

Electron dynamics and harmonics emission spectra due to electron oscillation driven by intense laser pulses

The dynamics and harmonics emission spectra due to electron oscillation driven by intense laser pulses have been investigated considering a single electron model. The spectral and angular distributions of the harmonics radiation are numerically analyzed and demonstrate significantly different characteristics from those of the low-intensity field case. Higher-order harmonic radiation is possible for a sufficiently intense driving laser pulse. A complex shifting and broadening structure of the spectrum is observed and analyzed for different polarization. For a realistic pulsed photon beam, the spectrum of the radiation is redshifted for backward radiation and blueshifted for forward radiation, and spectral broadening is noticed. This is due to the changes in the longitudinal velocity of the electron during the laser pulse. These effects are much more pronounced at higher laser intensities giving rise to even higher-order harmonics that eventually leads to a continuous spectrum. Numerical simulations have further shown that broadening of the high harmonic radiation can be limited by increasing the laser pulse width. The complex shifting and broadening of the spectra can be employed to characterize the ultrashort and ultraintense laser pulses and to study the ultrafast dynamics of the electrons. (c) 2006 American Institute of Physics.