HIRFL-CSR束流位置监测系统的前端电子学研究

国家大科学工程兰州重离子加速器冷却储存环(HIRFL-CSR)已经建成，在CSR调试过程中各系统均要保证加速器稳定运行，而束流诊断系统的稳定可靠运行对顺利完成调试任务具有重要意义。系统可测得束流的能量、强度、位置、相位、剖面和发射度等参数。对这些参数的准确测量是实现CSR稳定运行和各部分之间匹配的必要手段。而束流参数一般都是通过采集可由计算机处理的电信号，并经过合理的分析得到的。因此对前端电子学系统的研究必不可少。本论文将围绕HIRFL-CSR束流诊断系统的子系统——束流位置监测系统的前端电子学设计来展开。由于我所冷却储存环的束流强度弱（最低100nA），现场的噪声和干扰较大，束流监测系统探测单元的输出信号很容易被噪声淹没，所以设计一个合适的前端电子学电路十分必要，而且需要采用一些特殊的微弱信号检测方法。通过对微弱信号检测方法的研究和学习，我们先后采用了两种处理方法，对淹没于噪声中的微弱信号幅值进行检测。第一种方法是基于宽带放大和峰值保持电路来完成对信号峰值的检测；第二种方法是基于外差式技术与锁定放大方法来实现信号峰值的检测。本论文对这两种处理方法和所涉及到的电子学电路原理进行了详细的阐述。论文的主要内容如下：第一章主要针对课题的研究背景来展开。简单介绍了HIRFL-CSR工程，及其束流诊断系统，最后结合束流诊断系统的子系统—束流位置检测系统的前端电子学电路，提出了微弱信号检测方法。第二章介绍了微弱信号检测技术，重点分析了噪声的种类和抑制噪声的处理方法。第三章对我们在束流位置检测系统的前端电子学电路中，采用的第一种处理方法—基于宽带方式的处理方法，作了详细的介绍。主要包括下面几个单元电路： 高阻输入形式和低阻输入形式的低噪声宽带放大器、高速窄脉冲信号峰值保持电路，慢前沿信号峰值保持电路。第四章对我们在束流位置检测系统的前端电子学电路中，采用的第二种处理方法—基于窄带方式的处理方法，作了详细的介绍。重点分析了外差式锁定放大电路中的频率合成器、频谱搬移电路和低通滤波电路。第五章围绕巴特沃思型滤波器的设计展开。主要介绍了低通、高通和带通三种滤波器的理论计算，并作了相应的功能仿真。第六章针对我们涉及到的所有电路的PCB设计，作了相关的分析和总结。第七章对外差式锁定放大电路的实验室参数测试方法、步骤和偏差分析作了详细的介绍。第八章对总结回顾了几年来科研学习所取得的阶段性成果，并对今后的工作方向做了一个简单的计划

CSR实验探测装置前端电子学的研究

随着国家大科学工程兰州重离子加速器冷却储存环（HIRFL－CSR）的建成， HIRFL－CSR实验探测装置也在建设中。它主要由CSR外靶实验装置和CSRe上的配套实验装置组成，具有高通道数，高探测效率，高能量分辨，高时间分辨和高位置分辨等特点；将实现奇异核性质及奇异核反应研究，核物质的同位旋效应研究等物理目标。如此先进的大型实验探测系统对前端电子学提出了高密度、高集成度，低功耗和良好的长期稳定性等多方面的严格要求，传统的插件化的NIM 和CAMAC 电子学对此已无能为力，因此建造与之相配的读出电子学和数据获取系统成为一个重要的课题和任务。基于这个出发点，论文从发展髙性能多路小型化前端电路和基于先进ASIC芯片的前端电子学系统两个方面进行研究，讨论了我们在这两种电路研究方面采用的新思路和新方法。论文在发展髙性能多路小型化前端电路方面，阐述了一种用于时间分析的宽带放大电路的设计与实现。电路采用超低噪声的集成运放，解决了如何降低噪声的问题；同时引入2阶贝塞尔滤波器加反向求和电路，有效抑制直流漂移，使快放具有良好的直流稳定性和增益稳定性。基于先进ASIC芯片的前端电子学系统的研究是论文的重点。它着重解决了近代核与粒子物理实验中越来越突出的多路多道需求和高性能指标要求。论文首先介绍了一种处于国际先进水平的ASIC芯片的内部结构；随后详细论述了系统的硬件设计和软件开发；最后对系统进行了调试和性能分析。实验室调试结果说明系统已能够适应物理实验的要求，并为最终建立一个完整的满足性能要求的前端电子学系统打下了坚实的基础

电荷测量与时序逻辑电路的研究

中国科学院近代物理研究所大科学工程HIRFL-CSR（Heavy Ion Research Facility at LanZhou-Cooling Storage Ring兰州重离子冷却储存环）已建成并处于调试和验收阶段，实验探测系统也正在建设当中。CSRm实验探测系统由外靶系统和内靶系统构成，主要用于核物理实验研究。CSRm TOF测量系统是现阶段CSRm实验探测系统的主要任务之一。 针对CSRm TOF测量系统电荷测量部分，论文阐述了一种采用前端ASIC-SFE16（Saclay Front End 16）芯片实现电荷测量的新型方法。它替代了采用分立元件和电子学插件构建系统的传统方法，着重解决了近代核物理实验中越来越突出的多路多道需求和高性能指标要求。根据我所多丝漂移室探测器的实际情况，我们设计了基于ASIC芯片的电荷测量前端电路板，结合中国科技大学的时间测量数字获取板，我们初步完成了对系统软硬件的测试，给出的实验室性能测试指标，为其在实验探测系统中的应用奠定了坚实的基础。 同时为了选出测量中的有用事例，需要进行事例判选，因此我们研制了多路延迟/脉宽调节时序逻辑电路，主要功能是针对提供的多路逻辑时序信号进行延迟和脉宽调节，支持NIM负信号输入和输出。 文中最后一部分论述了根据在调试过程中出现的实际问题所提出的解决方法，主要是针对电路的可靠性设计和噪声的处理

CSR控制系统—前端现场服务器系统的COM控制组件库

HIRFL-CSR（童话垂离子冷却储存环）是国家重点实验室之一。CSR控制系统是保证CSR正常运行的重要环节。作为这样一个大型的控制系统，是由多个子系统分别组成的。在CSR新的控制方案中，我们允许用户通过访问网页来控制设备和获知设备的当前运行情况。本文主要描述了三个子系统中设备控制的实现和设备监控程序的实现，分别采用了COM组件技术和Win32应用程序。本文首先介绍了Windows编程，win32应用程序，开发COM组件工具ATL，和COM组件的基本概念。随后详细介绍了在实现设备控制和设备监控程序中所应用的各种技术，包括：多线程的实现、川州访问远立湍数据库、串日通信的实现，对硬件板卡的访问。其次，还介绍了各个子系统控制软件的结构和总体设计，包括了被控设务的COM组件的设计，监控程序的设计和功能实现方案。主要以电子冷却控制系统为例，详细介绍了分别用于控制常压端和高压端设备的COM组件功能实现和常压端监控程序、高压端监控程序功能的实现。整个论文的工作完成了CSR控制系统中子系统的CPM组件和设备监控程序的软件编制，调试。为以后开发和实现控制系统的COM组件和设备监控程序提供了一个原型。

嵌入式智能图像处理在火灾预警系统的应用

传统的火灾检测方法一般采用感烟、感温、感光探测器等进行探测。本文提出了一种嵌入式基于图像视觉特征的火灾检测方法,以TI公司的数字多媒体处理器TMS320DM642为核心,设计实现智能前端火灾探测与自动报警系统。通过DM642对视频图像进行采集并结合相应的智能图像处理与模式识别算法,对森林火险进行实时监控。实验结果表明,该系统比传统系统更进一步减少了误报率且具有响应快、监控范围广等优点。

青藏高原东部电性结构特征及地球动力学意义

As the largest and highest plateau on the Earth, the Tibetan Plateau has been a key location for understanding the processes of mountain building and plateau formation during India-Asia continent-continent collision. As the front-end of the collision, the geological structure of eastern Tibetan Plateau is very complex. It is ideal as a natural laboratory for investigating the formation and evolution of the Tibetan Plateau. Institute of Geophysics, Chinese Academy of Sciences (CAS) carried out MT survey from XiaZayii to Qingshuihe in the east part of the plateau in 1998. After error analysis and distortion analysis, the Non-linear Conjugate Gradient inversion(NLCG), Rapid Relaxation Inversin (RRI) and 2D OCCAM Inversion algorithms were used to invert the data. The three models obtained from 3 algorithms provided similar electrical structure and the NLCG model fit the observed data better than the other two models. According to the analysis of skin depth, the exploration depth of MT in Tibet is much more shallow than in stable continent. For example, the Schmucker depth at period 100s is less than 50km in Tibet, but more than 100km in Canadian Shield. There is a high conductivity layer at the depth of several kilometers beneath middle Qiangtang terrane, and almost 30 kilometers beneath northern Qiangtang terrane. The sensitivity analysis of the data predicates that the depth and resistivity of the crustal high conductivity layer are reliable. The MT results provide a high conductivity layer at 20~40km depth, where the seismic data show a low velocity zone. The experiments show that the rock will dehydrate and partially melt in the relative temperature and pressure. Fluids originated from dehydration and partial melting will seriously change rheological characteristics of rock. Therefore, This layer with low velocity and high conductivity layer in the crust is a weak layer. There is a low velocity path at the depth of 90-110 km beneath southeastern Tibetan Plateau and adjacent areas from seismology results. The analysis on the temperature and rheological property of the lithosphere show that the low velocity path is also weak. GPS measurements and the numerical simulation of the crust-mantle deformation show that the movement rate is different for different terranes. The regional strike derived from decomposition analysis for different frequency band and seismic anisotropy indicate that the crust and upper mantle move separately instead of as a whole. There are material flow in the eastern and southeastern Tibetan Plateau. Therefore, the faults, the crustal and upper mantle weak layers are three different boundaries for relatively movement. Those results support the "two layer wedge plates" geodynamic model on Tibetan formation and evolution.

Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering

Sb-doped and undoped ZnO thin films were deposited on Si (100) substrates by radio frequency (RF) magnetron sputtering. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses revealed that all the films had polycrystalline wurtzite structure and c-axis preferred orientation. Room temperature Hall measurements showed that the as-grown films were n-type and conducting (rho similar to 1-10 Omega cm). Annealing in a nitrogen ambient at 400 degrees C for 1 h made both samples highly resistive (rho > 10(3) Omega cm). Increasing the annealing temperature up to 800 C, the resistivity of the ttndoped ZnO film decreased gradually, but it increased for the Sb-doped ZnO film. In the end, the Sb-doped ZnO film annealed at 800 C became semi-insulating with a resistivity of 10(4)Omega cm. In addition, the effects of annealing treatment and Sb-doping on the structural and electrical properties are discussed. (c) 2006 Elsevier B.V. All rights reserved.

RF system design and measurement of HIRFL-CSRe

An RF system for the CSRe (cooling storage experimental ring) is designed and manufactured domestically. The present paper mainly describes the RF system design in five main sections: ferrite ring, RF cavity, RF generator, low level system and cavity cooling. The cavity is based on a type of coaxial resonator which is shorted at the end with one gap and loaded with domestic ferrite rings. The RF generator is designed in the push-pull mode and the low level control system is based on a DSP+FGPA+DDS+USB inter...

Numerical Analysis of Theoretical Model of the Rf MEMs Switches

An improved electromechanical model of the RF MEMS (radio frequency microelectromechanical systems) switches is introduced, in which the effects of intrinsic residual stress from fabrication processes, axial stress due to stretching of beam, and fringing field are taken into account. Four dimensionless numbers are derived from the governing equation of the developed model. A semi-analytical method is developed to calculate the behavior of the RF MEMS switches. Subsequently the influence of the material and geometry parameters on the behavior of the structure is analyzed and compared, and the corresponding analysis with the dimensionless numbers is conducted too. The quantitative relationship between the presented parameters and the critical pull-in voltage is obtained, and the relative importance of those parameters is given.

Failure modes of doubly supported capacitive RF MEMS switches

For the design of radio frequency micro-electro-mechanical systems (RF MEMS) switches, the reliability issue becomes increasingly important. This paper represents some failure phenomena of doubly supported capacitive RF MEMS switches that include observable destruction failure and directly measurable parameter degradation obtained from the actuating-voltage testing and scanning electron microscope (SEM) observation. The relevant failure modes as well as their failure mechanisms are identified.

Electromechanical Model of RF MEMS Switches

With the recent rapid growth of Radio Frequency Micro-Electro-Mechanical Systems (RF MEMS) switches, there has developed an emergent requirement for more accurate theoretical models to predict their electromechanical behaviors. Many parameters exist in the analysis of the behavior of the switch, and it is inconvenient for further study. In this paper, an improved model is introduced, considering simultaneously axial stress, residual stress, and fringing-field effect of the fixed-fixed bridge structure. To avoid any unnecessary repetitive model tests and numerical simulation for RF MEMS switches, some dimensionless numbers are derived by making governing equation dimensionless. The electromechanical behavior of the fixed-fixed bridge structure of RF MEMS switches is totally determined by these dimensionless numbers.

Stress state in front of a crack perpendicular to bimaterial interface

Using a dislocation simulation approach, the basic equation for a crack perpendicular to a bimaterial interface is formulated in this paper. A novel expansion method is proposed for solving the problem. The complete solution for the problem, including the T stress ahead of the crack tip and the stress intensity factors are presented. The stress field characteristics are analyzed in detail. It is found that ahead of the crack tip and near the interface the normal stress, perpendicular to the crack plane, sigma(x), is characterized by the K fields and the normal stress sigma(y) is dominated by the K field plus T stress in the region of 0 < r/b < 0.4 for b/a(0) less than or equal to 0.1, where b is the distance from the crack tip to the interface.

An Efficient Front-Tracking Method For Fully Nonlinear Interfacial Waves

A fully nonlinear and dispersive model within the framework of potential theory is developed for interfacial (2-layer) waves. To circumvent the difficulties arisen from the moving boundary problem a viable technique based on the mixed Eulerian and Lagrangian concept is proposed: the computing area is partitioned by a moving mesh system which adjusts its location vertically to conform to the shape of the moving boundaries but keeps frozen in the horizontal direction. Accordingly, a modified dynamic condition is required to properly compute the boundary potentials. To demonstrate the effectiveness of the current method, two important problems for the interfacial wave dynamics, the generation and evolution processes, are investigated. Firstly, analytical solutions for the interfacial wave generations by the interaction between the barotropic tide and topography are derived and compared favorably with the numerical results. Furthermore simulations are performed for the nonlinear interfacial wave evolutions at various water depth ratios and satisfactory agreement is achieved with the existing asymptotical theories. (c) 2008 Elsevier Inc. All rights reserved.

Stress-distribution at the rigid circular-arc inclusion end

The elastic plane problem of a rigid co-circular arc inclusion under arbitrary loads is dealt with. Applying Schwarz's reflection principle integrated with the analysis of the singularity of complex stress functions, the general solution of the problem is found and several closed-form solutions to some problems of practical importance are given. Finally, the stress distribution at the arc inclusion end is examined and a comparison is made with that of the rigid line inclusion end to show the effect of curvature.