Recombination kinetics of Te isoelectronic centers in ZnSTe

The recombination kinetics of Te isoelectronic centers in ZnS1-xTex (0.0065 less than or equal to x less than or equal to 0.85) alloys is studied by time-resolved photoluminescence (TRPL) at low temperature. The measured radiative recombination lifetimes of different Te bound exciton states are quite different, varying from a few nanoseconds to tens of nanosecond. As the bound exciton state evolves from a single Te impurity (Te-1) to larger Te clusters (Te-n, n=2,3,4), the recombination lifetime increases. It reaches maximum (similar to40 ns) for the Te-4 bound states at x=0.155. The increase of the exciton lifetime is attributed to the increasing exciton localization effect caused by larger localization potential. In the large Te composition range (x > 0.155), the exciton recombination lifetime decreases monotonically with Te composition. It is mainly due to the hybridization between the Te localized states and the host valence band states. The composition dependences of the exciton binding energy and the photoluminescence (PL) line width show the similar tendency that further support the localization picture obtained from the TRPL measurement. (C) 2005 American Institute of Physics.

Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots

Two types of InAs self-assembled Quantum dots (QDs) were prepared by Molecular beam epitaxy. Atomic force microscopy (AFM) measurements showed that, compared to QDs grown on GaAs substrate, QDs grown on InGaAs layer has a significantly enhanced density. The short spacing (several nanometer) among QDs stimulates strong coupling and leads to a large red-shift of the 1.3 mu m photoluminescence (PL) peak. We study systematically the dependence of PL lifetime on the QDs size, density and temperature (1). We found that, below 50 K, the PL lifetime is insensitive to temperature, which is interpreted from the localization effects. As T increases, the PL lifetime increases, which can be explained from the competition between the carrier redistribution and thermal emission at higher temperature. The increase of carriers in QDs migrated from barriers and wetting layer (WL), and the redistribution of carriers among QDs enhance the PL lifetime as T increases. The thermal emission and non-radiative recombination have effects to reduce the PL lifetime at higher T. As a result, the radiative recombination lifetime is determined by the wave function overlapping of electrons and holes in QDs, and QDs with different densities have different PL lifetime dependence on the QDs size. (c) 2005 Elsevier B.V. All rights reserved.

Radiative recombination characteristics in GaAs multilayer n(+)-i interfaces

In this communication, we have carried out a detailed investigation of radiative recombination in n-GaAs homojunction far-infrared detector structures with multilayer emitter (n(+))-intrinsic (i) interfaces by temperature-dependent steady-state photoluminescence measurements. The observation of the emitter-layer luminescence structures has been identified from their luminescence characteristics, in combination with high density theoretical calculation. A photogenerated carrier transferring model has been proposed, which can well explain the dependencies of the luminescence intensities on the laser excitation intensity and temperature. Furthermore, the obtained radiative recombination behavior helps us to offer a proposal to improve the operating temperature of the detector. (C) 2001 American Institute of Physics.

Radiative transition in delta-doped GaAs superlattices

Radiative transition in delta-doped GaAs superlattices with a weak coupling was investigted at low temperature, The experimental results show that the transitions from both electron ground state and excited state to hole state have been observed, Based on the effective mass approximation theory, the structures of energy band and photoluminescence spectra for the samples used were calculated. Comparing the experiment with theory, a good agreement was abtained.

RADIATIVE RECOMBINATION IN N-TYPE AND P-TYPE GAAS COMPENSATED WITH LI

We report fundamental changes of the radiative recombination in a wide range of n-type and p-type GaAs after diffusion with the group-I element Li. These optical properties are found to be a bulk property and closely related to the electrical conductivity of the samples. In the Li-doped samples the radiative recombination is characterized by emissions with excitation-dependent peak positions which shift to lower energies with increasing degree of compensation and concentration of Li. These properties are shown to be in qualitative agreement with fluctuations of the electrostatic potential in strongly compensated systems. For Li-diffusion temperatures above 700-800-degrees-C semi-insulating conditions with electrical resistivity exceeding 10(7) OMEGA cm are obtained for all conducting starting materials. In this heavy Li-doping regime, the simple model of fluctuating potentials is shown to be inadequate for explaining the. experimental observations unless the number of charged impurities is reduced through complexing with Li. For samples doped with low concentrations of Li, on the other hand, the photoluminescence properties are found to be characteristic of impurity-related emissions.

Radiative electron capture and subsequent radiative decay in collisions of U89+ ions with N-2

To evaluate the radiative electron capture for the collisions of U89+ ion with N-2, radiative recombination cross sections and the corresponding emitted photon energies are calculated from the ground state 1s(2)2s to 1s(2)2snl(j) (2 <= n <= 9, 0 <= l <= 6) using the newly developed relativistic radiative recombination program RERR06 based on the multiconfiguration Dirac-Fock method. The x-ray spectra for radiative electron capture in the collision have been obtained by convolving the radiative recombination cross sections and the Compton profile of N2. Good agreement is found between the calculated and experimental spectra. In addition, the transition energy levels and probabilities among the 147 levels from the captured 1s(2)2snl(j) have been calculated. From the calculated results, radiative decay cascade processes followed by the radiative electron capture have also been studied with the help of multistep model and coupled rate equations, respectively. The present results not only make us understand the details of the radiative electron captures and the radiative decay cascade spectra in the experiment but also show a more efficient way to obtain the cascade spectra. Finally, the equivalence between the multistep model and coupled rate equations has been shown under a proper condition and the latter can hopefully be extended to investigate other cascade processes.

Angular distribution of characteristic photons after radiative electron capture at strong central fields

We investigate the difference in the angular distribution of Ly-alpha(1) and K alpha(1) photons from hydrogenlike and heliumlike ions of uranium after radiative electron capture to the L shell. The strong anisotropy in the former case is changed to a very small one in the latter case. Our calculations support the observation. The effect takes place even in the limiting case of noninteracting electrons, being caused by the Pauli principle.

用于辐射复合与双电子复合实验的低能离子闪烁探测器；A Scintillator Detector for Low Energy Projectile Detection in Radiative Recombination and Dielectron Recombination Experiments

为了在CSRm的电子冷却器上进行辐射复合以及双电子复合实验,需要探测能量小于4MeV/u的离子,因此设计了新的置于超高真空环境的CsI(Tl)闪烁探测器,探测器采用的光电倍增管为R7525(Hamamatsu)。介绍了新闪烁探测器的结构,并对其进行了性能测试。测试结果表明,该探测器对高、低能离子均有良好的响应,探测器的信号十分明显。探测器的最高计数率可以达到106ions/s,并且探测器附近的真空度可达10-10Pa量级,能够满足辐射复合与双电子复合实验以及储存环对真空的要求,为今后在CSRm上进行复合实验打下了良好的基础。

B-(*())(B)over-bar(()*()) intermediate states contribution to Gamma(4S, 5S) -> eta(b) + gamma radiative decay

In this work, we investigate the rescattering effects in the radiative decay Gamma(5S) -> eta(b) + gamma , which were suggested to be crucially important for understanding the anomalous largeness of the branching ratios B(Gamma(5S) -> Gamma(1S) + pi pi) and B(Gamma(5S) -> Gamma(1S) + eta). Our calculations show that the rescattering effects may enhance Gamma(Gamma(10860) -> eta(b) +gamma) by four orders, but the tetraquark structure does not. Recently the BABAR and CLEO collaborations have measured the mass of eta(b) and the branching ratios B(Gamma(2S) -> eta(b) +gamma), B(Gamma(3S) -> eta(b) +gamma). We hope that very soon, Gamma(10860) -> eta(b) + gamma) will be measured and it would be an ideal opportunity for testing whether the rescattering or the tetraquark structure is responsible for the anomaly of B(Gamma(5S) -> Gamma(nS) pi(+) pi(-))(n = 1, 2, 3)), i. e., the future measurements on the radiative decays of Gamma(5S) might be a touchstone of the two mechanisms.

Restudy on the wave functions of Gamma(nS) states in the light-front quark model and the radiative decays of Gamma(nS) -> eta(b) + gamma

The light-front quark model has been applied to calculate the transition matrix elements of heavy hadron decays. However, it is noted that using the traditional wave functions of the light-front quark model given in the literature, the theoretically determined decay constants of the Gamma(nS) obviously contradict the data. This implies that the wave functions must be modified. Keeping the orthogonality among the nS states and fitting their decay constants, we obtain a series of the wave functions for Gamma(nS). Based on these wave functions and by analogy with the hydrogen atom, we suggest a modified analytical form for the Gamma(nS) wave functions. Using the modified wave functions, the obtained decay constants are close to the experimental data. Then we calculate the rates of radiative decays of Gamma(nS) -> eta(b) + gamma. Our predictions are consistent with the experimental data on decays Gamma(3S) -> eta(b) + gamma within the theoretical and experimental errors.

Role of five-quark components in radiative and strong decays of the Lambda(1405) resonance

Within an extended chiral constituent quark model, the three- and five-quark structure of the S-01 resonance Lambda(1405) is investigated. Helicity amplitudes for electromagnetic decays [Lambda(1405)->Lambda(1116)gamma, Sigma(1194)gamma] and transition amplitudes for strong decays [Lambda(1405)->Sigma(1194)pi, K- p] are derived, as well as the relevant decay widths. The experimental value for the strong decay width, Gamma(Lambda(1405)->(Sigma pi)degrees) = 50 +/- 2MeV, is well reproduced with about 50% of a five-quark admixture in the Lambda(1405). Important effects owing to the configuration mixing among Lambda P-2(1)A, Lambda P-2(8)M, and Lambda P-4(8)M are found. In addition, transitions between the three- and the five-quark components in the baryons turn out to be significant in both radiative and strong decays of the Lambda(1405) resonance.

Long-distant contribution and chi(c1) radiative decays to light vector meson

The discrepancy between the PQCD calculation and the CLEO data for chi (c1)->gamma V (V=rho (0), omega, phi) stimulates our interest in exploring other mechanisms of chi (c1) decay. In this work, we apply an important non-perturbative QCD effect, i.e., the hadronic loop mechanism, to study chi (c1)->gamma V radiative decay. Our numerical result shows that the theoretical results including the hadronic loop contribution and the PQCD calculation of chi (c1)->gamma V are consistent with the corresponding CLEO data of chi (c1)->gamma V. We expect further experimental measurement of chi (c1)->gamma V, which will be helpful to test the hadronic loop effect on chi (c1) decay.

Atomic Structures and Radiative Properties of He-like Ions in Debye Plasmas

A detailed investigation of plasma screening effects on atomic structure and transition properties are presented for He-like ions embedded in dense plasma environment. Multi-configuration Dirac-Fock calculations were carried out for these ions by considering a Debye-Huckel potential. A large-scale relativistic configuration-interaction method is adopted to calculate transition energies and transition probabilities and to allow for a systematic improvement of the calculations. Comparison of the presently calculated results with others, when available, is made.