Method for measuring the lateral aberrations of a lithographic projection system with mirror-symmetric FOCAL marks

A novel method for measuring the imaging quality of a projection system with mirror-symmetric FOCAL marks is proposed, and the principle of the method is described. Through experiments, it is demonstrated that not only the axial aberrations but also the lateral aberrations can be measured with high accuracy by the method. The advantages of the method include obtaining more aberrations than the FOCAL technique and making it much simpler to perform a full-scale measurement of the imaging quality of a lithographic projection system. (C) 2006 Society of Photo-Optical Instrumentation Engineers.

Method for measuring the lateral aberrations of a lithographic projection system with mirror-symmetric FOCAL marks

A novel method for measuring the imaging quality of a projection system with mirror-symmetric FOCAL marks is proposed, and the principle of the method is described. Through experiments, it is demonstrated that not only the axial aberrations but also the lateral aberrations can be measured with high accuracy by the method. The advantages of the method include obtaining more aberrations than the FOCAL technique and making it much simpler to perform a full-scale measurement of the imaging quality of a lithographic projection system. (C) 2006 Society of Photo-Optical Instrumentation Engineers.

A novel method to measure coma aberration of projection system

A novel method to measure coma aberration by pattern displacements at different defocus positions is proposed in this paper. The effect of defocus on coma-induced pattern displacement is analyzed. The measuring principle of the method is described in detail. Using the simulation program PROLITH, the proportionality factors between pattern displacement and coma aberration at different defocus positions are calculated. It is proved that the method is simple to perform and the measurement accuracy of coma can increase approximately by 25% by this novel method. (c) 2006 Elsevier GmbH. All rights reserved.

Double-line-density gratings structure for compression and generation of double femtosecond laser pulses

Grating pairs are widely used for pulse compression and stretching. Normally, the two gratings are identical. We propose a very simple structure with double-line-density reflective gratings for pulse compression and generation of double pulses, which has the advantages of no material dispersion, compact in volume, simple in structure, etc. The use of reflective Dammann gratings fully demonstrated the principle of this structure. The output pulses are well verified by a standard frequency-resolved optical gating apparatus. This structure will be highly interesting in ultrashort pulse compression and other more practical applications of femtosecond laser pulses. (c) 2007 Optical Society of America.

A novel method for measuring the coma of a lithographic projection system by use of mirror-symmetry marks

A novel method for measuring the coma of a lithographic projection system is proposed and the principle of the method is described. By utilizing mirror-symmetry marks, the adverse effects of axial aberrations on the coma measurement are avoided. Experimental results demonstrated that the method has high accuracy. Compared with TAMIS, the conventional technique used for coma measurement, the method is more reliable because the influences of the process factors on the lateral displacements have been considered. (c) 2006 Elsevier Ltd. All rights reserved.

The three dimensional structure and biological domains of the p53 C-terminus.

It was expected that there are a coil (289 similar to 325) and two a helix (alpha(1)368 similar to 373, alpha(2)381 similar to 388) structures in p53 protein C-terminal region based on its mRNA secondary structure template and Chou-Fasman's protein secondary structure principle of prediction. The result was conformed by the other four methods of protein secondary structure prediction that are based on the multiple sequence alignment (accuracy = 73.20%). Combine with the 31 amino acids crystal structure of the oligomerization, the three dimensional conformation of p53 C-terminal 108 residues was built using the SGI INDIGO(2) computer. This structure further expounds the relationship among those biological function domains of p53 C- terminus at three-dimensional level.

Atomic configurations of dislocation core and twin boundaries in 3C-SiC studied by high-resolution electron microscopy

The defects in 3C-SiC film grown on (001) plane of Si substrate were studied using a 200 kV high-resolution electron microscope with point resolution of 0.2 nm. A posterior image processing technique, the image deconvolution, was utilized in combination with the image contrast analysis to distinguish atoms of Si from C distant from each other by 0.109 nm in the [110] projected image. The principle of the image processing technique utilized and the related image contrast theory is briefly presented. The procedures of transforming an experimental image that does not reflect the crystal structure intuitively into the structure map and of identifying Si and C atoms from the map are described. The atomic configurations for a 30 degrees partial dislocation and a microtwin have been derived at atomic level. It has been determined that the 30 degrees partial dislocation terminates in C atom and the segment of microtwin is sandwiched between two 180 degrees rotation twins. The corresponding stacking sequences are derived and atomic models are constructed according to the restored structure maps for both the 30 degrees partial dislocation and microtwin. Images were simulated based on the two models to affirm the above-mentioned results.

Small-signal power measuring technique for measuring the frequency response of electroabsorption modulators

We propose and demonstrate measurement of the frequency response of an electroabsorption (EA) modulator using an extended small-signal power measuring technique. In this technique, the modulator is driven by a microwave carrier amplitude modulated by a low-frequency signal, and the modulator frequency response is obtained without the need of a high-speed photodetector. Based upon the nonlinear characteristics of the EA modulator and the underlying principle of the present method, equations have been derived. A measurement scheme using a network analyzer and a low-speed photodetector has been proposed and constructed, and the experimental results confirm that our proposed method is as accurate as the swept-frequency measurement using a network analyzer directly.

Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy

In the present review, the measuring principle of reflectance difference spectroscopy (RDS) is given. As a powerful tool in the surface and interface analysis technologies, the application of RDS to the research on semiconductor materials is summarized. along with the origins of the in-plane optical anisotropy of semiconductors. And it is believed that RDS will play an important role in the electrooptic modification of Si-based semiconductor materials.

Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors

The principle of high-electron-mobility transistor (HEMT) and the property of two-dimensional electron gas (2DEG) have been analyzed theoretically. The concentration and distribution of 2DEG in various channel layers are calculated by numerical method. Variation of 2DEG concentration in different subband of the quantum well is discussed in detail. Calculated results show that sheet electron concentration of 2DEG in the channel is affected slightly by the thickness of the channel. But the proportion of electrons inhabited in different subbands can be affected by the thickness of the channel. When the size of channel lies between 20-25 nm, the number of electrons occupying the second subband reaches the maximum. This result can be used in parameter design of materials and devices.

Design of high brightness cubic-GaN LEDs grown on GaAs substrate

The Principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of GaN/GaAs optical devices by wafer-bonding technique. The calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown GaN/GaAs samples when a thin Ni layer was used as adhesive layer and Ag layer as reflective layer. Full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.

The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method

Multi-sheet InGaN/GaN quantum dots (QDs) were grown successfully by surface passivation processing and low-temperature growth in metalorganic chemical vapor deposition. This method based on the principle of increasing the energy barrier of adatom hopping by surface passivation and low-temperature growth, is quite different from present methods. The InGaN quantum dots in the first layer of about 40-nm-wide and 15-nm-high grown by this method were revealed by atomic force microscopy. The InGaN QDs in upper layer grew bigger. To our knowledge, the current-voltage characteristics of multi-sheet InGaN/GaN QDs were measured for the fist time. Two kinds of resonance-tunneling-current features were observed which were attributed to the low-dimensional localization effect. Some current peaks only appeared in positive voltage for sample due to the non-uniformity of the QDs in the structure. (C) 2002 Elsevier Science B.V. All rights reserved.

Thermal test and analysis of concentrator solar cells - art. no. 684117

Under high concentration the temperature of photovoltaic solar cells is very high. It is well known that the efficiency and performance of photovoltaic solar cells decrease with the increase of temperature. So cooling is indispensable for a concentrator photovoltaic solar cell at high concentration. Usually passive cooling is widely considered in a concentrator system. However, the thermal conduction principle of concentrator solar cells under passive cooling is seldom reported. In this paper, GaInP/GaAs/Ge triple junction solar cells were fabricated using metal organic chemical vapor deposition technique. The thermal conductivity performance of monolithic concentrator GaInP/GaAs/Ge cascade solar cells under 400X concentration with a heat sink were studied by testing the surface and backside temperatures of solar cells. The tested result shows that temperature difference between both sides of the solar cells is about 1K. A theoretical model of the thermal conductivity and thermal resistance of the GaInP/GaAs/Ge triple junction solar cells was built, and the calculation temperature difference between both sides of the solar cells is about 0.724K which is consistent with the result of practical test. Combining the theoretical model and the practical testing with the upper surface temperature of tested 310K, the temperature distribution of the solar cells was researched.

Species transformation of trace elements and their distribution prediction in dyestuff residue incineration

The release of heavy metals from the combustion of hazardous wastes is an environmental issue of increasing concern. The species transformation characteristics of toxic heavy metals and their distribution are considered to be a complex problem of mechanism. The behavior of hazardous dyestuff residue is investigated in a tubular furnace under the general condition of hazardous waste pyrolysis and gasfication. Data interpretation has been aided by parallel theoretical study based on a thermodynamic equilibrium model based on the principle of Gibbs free energy minimization. The results show that Ni, Zn, Mn, and Cr are more enriched in dyestuff residue incineration than other heavy metals (Hg, As, and Se) subjected to volatilization. The thermodynamic model calculation is used for explaining the experiment data at 800 degrees C and analyzing species transformation of heavy metals. These results of species transformation are used to predict the distribution and emission characteristics of trace elements. Although most trace element predictions are validated by the measurements, cautions are in order due to the complexity of incineration systems.

Analysis of the lateral displacement and optical path difference in wide-field-of-view polarization interference imaging spectrometer

The mechanism of beam splitting and principle of wide-field-of-view compensation of modified Savart polariscope in the wide-field-of-view polarization interference imaging spectrometer (WPIIS) are analyzed and discussed. Formulas for the lateral displacement and optical path difference (OPD) produced by the modified Savart polariscope are derived by ray-tracing method. The theoretical and practical guidance is thereby provided for the study, design, modulation, experiment and engineering of the polarization interference imaging spectrometers and other birefringent Fourier-transform spectrometers based on Savart polariscopes. (c) 2006 Elsevier B.V. All rights reserved.