An Extremely High Molar Extinction Coefficient Ruthenium Sensitizer in Dye-Sensitized Solar Cells: The Effects of pi-Conjugation Extension

We report a heteroleptic ruthenium complex (007) featuring the electron-rich 5-octyl-2,2'-bis(3,4-ethylenedioxythiophene) moiety conjugated with 2,2-bipyridine and exhibiting 10.7% power conversion efficiency measured at the AM1.5G conditions, thanks to the enhanced light-harvesting that is closely related to photocurrent. This C107 sensitizer has an extremely high molar extinction coefficient,of 27.4 x 10(3) M-1 cm(-1) at 559 nm in comparison to its analogue C103 (20.5 x 10(3) M-1 cm(-1) at 550 nm) or Z907 (12.2 x 10(3) M(-1)cm(-1) at 521 nm) with the corresponding 5-hexyl-3,4-ethylenedioxythiopliene- or nonyl-substituted bipyridyl unit. The augmentation of molar extinction coefficients and the bathochromic shift of low-energy absorption peaks along with the pi-conjugation extension are detailed by TD-DFT calculations. The absorptivity of mesoporous titania films grafted with Z907, C103, or C107 sublinearly increases with the molar extinction coefficient of sensitizers, which is consistent with the finding derived from the surface coverage measurements that the packing density of those sensitizers decreases with the geometric enlargement of ancillary ligands.

Toward high-performance polymer solar cells: The importance of morphology control

Polymer solar cells have the potential to become a major electrical power generating tool in the 21st century. R&D endeavors are focusing on continuous roll-to-roll printing of polymeric or organic compounds from solution-like newspapers-to produce flexible and lightweight devices at low cost. It is recognized, though, that besides the functional properties of the compounds the organization of structures on the nanometer level-forced and controlled mainly by the processing conditions applied-determines the performance of state-of-the-art polymer solar cells. In such devices the photoactive layer is composed of at least two functional materials that form nanoscale interpenetrating phases with specific functionalities, a so-called bulk heterojunction. In this perspective article, our current knowledge on the main factors determining the morphology formation and evolution is introduced, and gaps of our understanding on nanoscale structure-property relations in the field of high-performance polymer solar cells are addressed. Finally, promising routes toward formation of tailored morphologies are presented.

All-organic tunnel junctions as connecting units in tandem organic solar cell

We employed organic heterojunction films as all-organic connecting units to fabricate tandem organic photovoltaic cells by continuous deposition. The all-organic connecting units with a better transparence and a lower sublimation temperature became an effective recombination center for electrons and holes photogenerated in front cell and back cell, respectively. Tunnel mechanism was proposed to explain the combination of photogenerated carrier.

Morphology and crystalline transition of poly (3-butylthiophene) associated with its polymorphic modifications

Poly (3-butylthiophene) (P3BT) is a much less studied conjugated polymer despite its high crystallizability and thus excellent electrical property. In this work, morphology of P3BT at different crystalline polymorphs and solvent/thermal induced phase transition between form I and U modifications have been intensively investigated by using optical microscopy, electron microscopy, differential scanning calorimetry, and X-ray diffraction. It is shown that a direct deposition from carbon disulfide (CS2) at fast evaporation results in P3BT crystals in form I modification, giving typical whiskerlike morphology. In contrast, low evaporation rate from CS, leads to formation of form II crystals with spherulitic morphology, which is so far scarcely observed in polythiophene.

Low-threshold conjugated polymer distributed feedback lasers on InP substrate

We demonstrate a low threshold polymer solid state thin-film distributed feedback (DFB) laser on an InP substrate with the DFB structure. The used gain medium is conjugated polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylenevinylene] (MEH-PPV) doped polystyrene (PS) and formed by drop-coating method. The second order Bragg scattering region on the InP substrate gave rise to strong feedback, thus a lasing emission at 638.9nm with a line width of 1.2nm is realized when pumped by a 532nm frequency-doubled Nd: YAG pulsed laser. The devices show a laser threshold as low as 7 nJ/pulse.

Synthesis and identification of Heterocyclic derivatives of fullerene C-60: Unexpected reaction of anionic C-60 with benzonitrile

During the reaction of reduced C-60 with benzyl bromide in benzonitrile, a novel cis-1 C-60 adduct, 1,4-dibenzyl-2,3-cyclic phenylimidate C-60 (1), Was obtained rather than the expected product of 1,4-dibenzyl C-60. The structure of compound 1 was analyzed by X-ray single-crystal diffraction, identifying the presence of a five-membered heterocycle at a [5,6] bond of C-60. One of the heteroatoms is assigned as a nitrogen atom; however, the identity of the other heteroatom cannot be determined unambiguously by crystallography due to similarity between the nitrogen and oxygen atoms.

Achieving perpendicular alignment of rigid polythiophene backbones to the substrate by using solvent-vapor treatment

The rigid backbone of the poly(3-butylthiophene) molecule adopts a perpendicular orientation with respect to the substrate by using a solvent-vapor treatment (see figure). Small and closely contacting spherulites instead of conventional whisker-like crystals are achieved. This could be utilized to improve charge-carrier mobility particularly in the direction normal to the film plane by designing and constructing thick crystalline domains in the functional layer.

Organic heterojunction with reverse rectifying characteristics and its application in field-effect transistors

A diode with a reverse rectifying characteristics was fabricated based on the organic heterojunction of copper phthalocyanine (CuPc) and copper-hexadecafluoro-phthalocyanine (F16CuPc). At the heterojunction interface, HOMO of CuPc is bended upwards and LUMO of F16CuPc is bended downwards, since the charge carriers were accumulated at both side of the interface, electrons in F16CuPc and holes in CuPc. The thickness of holes accumulated at the CuPc layer is about 10 nm. which was determined by fabricating organic field-effect transistors with active layers in series of thickness. By utilizing the heterojunction-effect, the threshold voltage in organic transistors can be modified.

The effect of interposing nanocrystalline Si(B) P plus layer on the photovoltaic properties of a-Si: H tandem solar cells

Tandem amorphous silicon solar cells have attracted extensive interest because of better performance than single junction counterpart. As n/p junctions play an important role in the current transportation of tandem solar cells, it is important to design and fabricate good n/p junctions.The properties of the n/p junction of amorphous silicon (a-Si) were studied. We investigate the effect of interposing a nanocrystalline p(+) layer between n (top cell) and p (bottom cell) layers of a tandem solar cell. The crystalline volume fraction, the band gap, the conductivity and the grain size of the nanocrystalline silicon (nc-Si) p(+) layer could be modulated by changing the deposition parameters.Current transport in a-Si based n/p ("tunnel") junctions was investigated by current-voltage measurements. The voltage dependence on the resistance (V/J) of the tandem cells was examined to see if n/p junction was ohmic contact. To study the affection of different doping concentration to the properties of the nc-Si p(+) layers which varied the properties of the tunnel junctions, three nc-Si p(+) film samples were grown, measured and analyzed.

Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells

The photovoltaic conversion efficiency for monolithic GaInP/GaInAs/Ge triple-junction cell with various bandgap combination (300 suns, AM1.5d) was theoretically calculated. An impressive improvement on conversion efficiency was observed for a bandgap combination of 1.708, 1.194, and 0.67 eV. A theoretical investigation was carried out on the effect of dislocation on the metamorphic structure's efficiency by regarding dislocation as minority-carrier recombination center. The results showed that only when dislocation density was less than 1.6x10(6) cm(-2), can this metamorphic combination exhibit its efficiency advantage over the fully-matched combination. In addition, we also briefly evaluated the lattice misfit dependence of the dislocation density for a group of metamorphic triple-junction system, and used it as guidance for the choice of the proper cell structure.

The fabrication of dipped CdS and sputtered ITO thin films for photovoltaic solar cells

Stable bilayer thin films of indium tin oxide (ITO) on CdS and CdS on ITO were formed for the window material of solar cells by chemical bath and sputtering methods. Scanning electron microscopy and X-ray diffraction studies have shown that both the ITO and CdS films are continuous, homogeneous, with high compactness. Measurement of the CdS film thickness across the 2 x 4 cm(2) reveals the good uniformity of these films. Four-point probe measurements show that the resistivity of a CdS film on an ITO surface is much better than that of the single CdS film The thermal stability of an ITO/CdS bilayer, interfacial reaction and optical transmittance were investigated at different annealing temperatures and environments (air, vacuum and N-2 + H-2). The results showed that the ITO/CdS bilayer film is a good window material for the CuInSe2 and CdTe cells. It is a simple method using a small amount of the cadmium compound.

A new technique for boosting efficiency of silicon solar cells

A new type of photovoltaic system with higher generation power density has been studied in detail. The feature of the system is a V-shaped module (VSM) with two tilted monocrystalline solar cells. Compared to solar cells in a flat orientation, the VSM enhances external quantum efficiency and leads to an increase of 31% in power conversion efficiency. Due to the VSM technique, short-circuit current density was raised from 24.94 to 33.7mA/cm(2), but both fill factor and open-circuit voltage were approximately unchanged. For the VSM similar results (about 30% increase) were obtained for solar cells fabricated by using mono-crystal line silicon wafers with only conventional background impurities. (c) 2004 Elsevier B.V. All rights reserved.

Technique for enhancing generation power density of silicon photovoltaic devices

A new type of photovoltaic system with higher generation power density has been studied in detail. The feature of the proposed system is a V-shaped structure with two polycrystalline solar cells. Compared to solar cells in a conventional approach, the V-shaped structure enhances external quantum efficiency and leads to an increase of 24% in power conversion efficiency.