提高能量密度的超衍射极限激光光束相位补偿技术

定义了激光光束衍射远场光斑压缩前后的能量比以及能量密度比来衡量超衍射极限激光光束的质量。通过利用反向传递算法设计了合适的补偿相位板，不但对准直放大的单一横模激光光束进行小于光学衍射极限的发散度的压缩，同时又保证光束能量集中于压缩后的远场衍射主瓣中，使压缩后的远场衍射光斑的能量密度增加。给出了相应的实例。这一结论不但解决了光学超分辨中光束压缩与能量损失不可避免这一矛盾，而且为发散度小且能量密度高的超衍射极限激光光束的实验工作以及该类光束的实际应用提供了理论基础。

列阵透镜对能量测量影响的分析

结合列阵透镜的透过率分析了其后的光场分布。列阵透镜由多个列阵元拼接而成，用以改善主透镜焦点附近能量分布的均匀性。列阵透镜在提高辐照均匀性的同时，给能量测量带来了不利的影响。这是由于经过列阵元的相邻子光束会产生干涉，干涉条纹处的激光能量密度和功率密度相应都大为增加，其数值在干涉区域中心处能上升到原来的4倍。更高的能量密度和功率密度对能量计提出了更苛刻的要求。在没有采取适当措施的时候使用，就会损坏能量计。

板条热容激光器的二维热特性

固体热容激光器（SSHCL）作为高功率固体激光器的一个重要发展方向,引起人们广泛关注。数值模拟激光介质板条在热容方式下工作的温度和应力分布是了解该类激光器工作特性的一种有效手段,采用平面应力近似法导出了半导体激光器抽运热容激光介质板的二维温度和应力分布公式,同时也对二维抽运光吸收密度、介质板温度分布和折射率变化进行了分析与讨论。数值计算的结果表明二维效应的温度分布和应力分布要比一维效应给出的分布更均匀。

Time response of optical switching properties of Sb thin films under focused laser pulses

The time response of optical switching properties of Sb thin films under focused laser pulses is investigated. The results show that the response course can be divided into onset, opening, and closing stages. Formulas for their lengths are given. The onset and opening times decrease with increasing pumping light power density. The closing time is about 150 ns. For optical memory, if the power density of the readout and recording lasers changes from 5 x 10(9) to 15 x 10(9) W/m(2), the onset time changes from 2.5 to 0.30 mus, and the opening time is on the nanosecond scale. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

Laser-induced changes on the complex refractive indices of phase-change thin film

The refractive indices of crystalline phase-change films are usually obtained by thermal-induced crystallization. However, this is not accurate, because the crystallization of phase-change film in rewritable optical disks is laser induced. In this study, we use the initializer to crystallize the phase-change films. The dependence of the refractive index n and the extinction coefficient k of the phase-change films on the initialization conditions are studied. Remarkable changes of the refractive indices (especially k) are found when the initialization laser power density is 6.63 mW/mum(2) and the initialization velocity is 4.0 m/s. At the same time, the structure changes of the phase-change films are also studied. This dependence is explained by the structure change of the films. These results are significant in improving the accuracy of optical design and the thermal simulation of phase-change optical disks, as well as in the study of phase-change optical disks at shorter wavelengths. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

Excimer laser plasma to control laser pulse duration

An injection-locking excimer laser beam with a pulse duration of 25 ns is focused on the surface of a polymide film. The laser beam that passes through the etching film is shorter than the original one. By optimizing the thickness of the film and the beam power density, a pulse with a 3-ns pulse duration can be obtained using this switch technology.

Three-photon-excited upconversion luminescence of niobium ions doped silicate glass by a femtosecond laser irradiation

We report on the bluish green upconversion luminescence of niobium ions doped silicate glass by a femtosecond laser irradiation. The dependence of the fluorescence intensity on the pump power density of laser indicates that the conversion of infrared irradiation to visible emission is dominated by three-photon excitation process. We suggest that the charge transfer from O-2-to Nb5+ can efficiently contribute to the bluish green emission. The results indicate that transition metal ions without d electrons play an important role in fields of optics when embedded into silicate glass matrix. (C) 2008 Optical Society of America.

Statistical approach to bulk inclusion initialized damage in films

In experiments, we have found an abnormal relationship between probability of laser induced damage and number density of surface inclusion. From results of X-ray diffraction (XRD) and laser induced damage, we have drawn a conclusion that bulk inclusion plays a key role in damage process. Combining thermo-mechanical damage process and statistics of inclusion density distribution, we have deduced an equation which reflects the relationship between probability of laser induced damage, number density of inclusion, power density of laser pulse, and thickness of films. This model reveals that relationship between critical sizes of the dangerous inclusions (dangerous inclusions refer to the inclusions which can initialize film damage), embedded depth of inclusions, thermal diffusion length and tensile strength of films. This model develops the former work which is the statistics about surface inclusion. (c) 2006 Elsevier B.V. All rights reserved.

激光作用下薄膜中的电子-声子散射速率

激光功率密度达到太瓦级时，光学激光薄膜破坏中雪崩机制占主导地位．研究雪崩破坏机理，必然涉及到电子吸收激光能量的速率和电子损耗能量的速率，这些都与电子和声子的散射有密切的联系．所以，电子受到的散射速率是研究雪崩机制的前提和基础．本文分析了截断散射声子波矢对散射速率的影响，得到散射速率与电子能量的依赖关系，与其他理论及实验结果一致．同时还对耦合参数进行了修正，得到了依赖声子波矢的耦合参数，修正结果表明在不改变散射速率与高能电子能量依赖关系的基础上，散射速率整体降低了．

薄膜体内缺陷对损伤概率的影响

由实验中得到的激光损伤概率与表面杂质密度的关系出发，结合XRD测试和激光损伤测试的结果，得到体缺陷或杂质破坏起主导作用的损伤机理．将激光作用时杂质吸收的热学和力学过程与杂质分布的统计规律结合起来，得到了深埋于薄膜内部的杂质诱导薄膜损伤概率与杂质密度、激光功率密度以及薄膜厚度的关系．该模型认为能诱导薄膜破坏的杂质尺寸范围与杂质填埋深度有关，所以不同深度处能诱导薄膜损伤的杂质密度不一样，理论结果与实验结果符合得很好．该理论模型还可以很好地解释损伤形貌．

Zn2SiO4/ZnO Core/Shell Coaxial Heterostructure Nanobelts Formed by an Epitaxial Growth

Si-doped ZnO can be synthesized on the surface of the early grown Zn2SiO4 nanostructures and form core/ shell coaxial heterostructure nanobelts with an epitaxial orientation relationship. A parallel interface with a periodicity array of edge dislocations and an inclined interface without dislocations can be formed. The visible green emission is predominant in PL spectra due to carrier localization by high density of deep traps from complexes of impurities and defects. Due to band tail localization induced by composition and defect fluctuation, and high density of free-carriers donated by doping, especially the further dissociation of excitons into free-carriers at high excitation intensity, the near-band-edge emission is dominated by the transition of free-electrons to free-holes, and furthermore, exhibits a significant excitation power-dependent red-shift characteristic. Due to the structure relaxation and the thermalization effects, carrier delocalization takes place in deep traps with increasing excitation density. As a result, the green emission passes through a maximum at 0.25I(0) excitation intensity, and the ratio of the violet to green emission increases monotonously as the excitation laser power density increases. The violet and green emission of ZnO nanostructures can be well tuned by a moderate doping and a variation in the excitation density.

Substantial photo-response of InGaN p-i-n homojunction solar cells

InGaN p-i-n homojunction structures were grown by metal-organic chemical vapor deposition, and solar cells with different p-contact schemes were fabricated. X-ray diffraction measurements demonstrated that the epitaxial layers have a high crystalline quality. Solar cells with semitransparent p-contact exhibited a fill factor (FF) of 69.4%, an open-circuit voltage (V-oc) of 2.24 V and an external quantum efficiency (EQE) of 41.0%. On the other hand, devices with grid p-contact showed the corresponding values of 57.6%, 2.36 V, 47.9% and a higher power density. These results indicate that significant photo-responses can be achieved in InGaN p-i-n solar cells.

Thermal effects investigation and cavity design in passively mode-locked Nd:YVO4 laser with a SESAM

A diode-pumped passively mode-locked Nd YVO4 laser with a five-mirror folded cavity is presented by using a semiconductor saturable absorber mirror (SESAM). The temperature distribution and thermal lensing in laser medium are numerically analyzed to design a special cavity which can keep the power density on SESAM under its damage threshold. Both the Q-switched and continuous-wave mode-locked operation are experimentally realized. The maximum average output power of 8.94 W with a 9.3 ps pulse width at a repetition rate of 111 MHz is obtained under a pump power of 24 W, correspondingly the optical slope efficiency is 39.2%. (C) 2008 Elsevier B.V. All rights reserved.

Preferred growth of nanocrystalline silicon in boron-doped nc-Si : H Films

Preferred growth of nanocrystalline silicon (nc-Si) was first found in boron-doped hydrogenated nanocrystalline (nc-Si:H) films prepared using plasma-enhanced chemical vapor deposition system. The films were characterized by high-resolution transmission electron microscope, X-ray diffraction (XRD) spectrum and Raman Scattering spectrum. The results showed that the diffraction peaks in XRD spectrum were at 2theta approximate to 47degrees and the exponent of crystalline plane of nc-Si in the film was (220). A considerable reason was electric field derived from dc bias made the bonds of Si-Si array according to a certain orient. The size and crystalline volume fraction of nc-Si in boron-doped films were intensively depended on the deposited parameters: diborane (B2H6) doping ratio in silane (SiH4), silane dilution ratio in hydrogen (H-2), rf power density, substrate's temperature and reactive pressure, respectively. But preferred growth of nc-Si in the boron-doped nc-Si:H films cannot be obtained by changing these parameters. (C) 2004 Elsevier Ltd. All rights reserved.

Time-resolved photoluminescence of sub-monolayer InGaAs/GaAs quantum-dot-quantum-well heterostructures

Time-resolved photoluminescence (PL) of sub-monolayer (SML) InGaAs/GaAs quantum-dot-quantum-well heterostructures was measured at 5 K for the first time. The radiative lifetime of SML quantum dots (QDs) increases from 500 ps to 800 ps with the increase of the size of QDs, which is related to the small confinement energy of the excitons inside SML QDs and the exciton transfer from smaller QDs to larger ones through tunneling. The rise time of quantum-dot state PL signal strongly depends on the excitation power density. At low excitation power density, the rise time is about 35 ps, the mechanism of carrier capture is dominated by the emission of longitudinal-optical phonons. At high excitation power density, the rise time decreases as the excitation density increases, and Auger process plays an important role in the carrier capture. These results are very useful for understanding the working properties of sub-monolayer quantum-dot devices.