First-principles study of native defects in rutile TiO2

Native point defects in the rutile TiO2 are studied via first-principles pseudopotential calculations. Except for the two antisite defects, all the native point defects have low formation energies. Under the Ti-rich growth condition, high concentrations of titanium interstitials and oxygen vacancies would form spontaneously in p-type samples; whereas high concentrations of titanium vacancies would form spontaneously in n-type samples regardless of the oxygen partial pressure. (c) 2007 Elsevier B.V. All rights reserved.

Recent progresses of Si-based photonics in chinese main land

Si-based photonic materials and devices, including SiGe/Si quantum structures, SOI and InGaAs bonded on Si, PL of Si nanocrystals, SOI photonic crystal filter, Si based RCE (Resonant Cavity Enhanced) photodiodes, SOI TO (thermai-optical) switch matrix were investigated in Institute of Serniconductors, Chinese Academy of Sciences. The main results in recent years are presented in the paper. The mechanism of PL from Si NCs embedded in SiO2 matrix was studied, a greater contribution of the interface state recombination (PL peak in 850 similar to 900 nm) is associated with larger Si NCs and higher interface state density. Ge dots with density of order of 10(11) cm(-2) were obtained by UHV/CVD growth and 193 nm excimer laser annealing. SOI photonic crystal filter with resonant wavelength of 1598 nm and Q factor of 1140 was designed and made. Si based hybrid InGaAs RCE PD with eta of 34.4% and FWHM of 27 nut were achieved by MOCVD growth and bonding technology between InGaAs epitaxial and Si wafers. A 16x16 SOI optical switch matrix were designed and made. A new current driving circuit was used to improve the response speed of a 4x4 SOI rearrangeable nonblocking TO switch matrix, rising and failing time is 970 and 750 ns, respectively.

Stabilized and tunable single-frequency erbium-doped fiber ring laser employing external injection locking

A stabilized and tunable single-longitudinal-mode erbium-doped fiber ring laser has been proposed and experimentally demonstrated. The laser is structured by combining the compound cavity with a fiber Fabry-Perot tunable filter. An injection-locking technique has been used to stabilize the wavelength and output power of the laser. One of the longitudinal modes is stimulated by the injected continuous wave so that this mode is able to win the competition to stabilize the system. A minimum output power of 0.6 dBm and a signal-to-noise ratio of over 43 dB within the tuning range of 1527-1562 nm can be achieved with the proposed technique. A wavelength variation of less than 0.01 nm, a power fluctuation of less than 0.02 dB, and a short-term linewidth of about 1.4 kHz have also been obtained.

环戊二烯基轻稀土氯化物的合成及其稳定性的研究

I LnCl_3-LiCl-THF配合物的研究深入地研究了氯化稀土和氯化锂于四氢呋喃溶液中，以不同的摩尔比，在不同条件下的反应。实验结果表明，反应速度随着稀土元素原子半径的减小，LiCl/LnCl_3摩尔比的增大，以及四氢呋喃用量的增加而加快。通过紫外质谱元素分析和X-射线单晶结构分析等证明，随着不同的LiCl/LnCl_3摩尔比和结晶条件的不同，可以得到不同组成的LnCl_3-LiCl-TNF配合物。对(LaCl)(THF)_2(μ_2-Cl)_4[Li(THF)_2]_2和(LaCl)DME(μ_3-Cl)(μ_2-Cl)_5(La·DME)Li(THF)_2晶体的结构分析表明，前者为单斜晶系，P21/C空间群。a=10.542(4), b=32.236(4), c=11.182(6)A °; β=113.50(3) °, V=3484.97 A °~3. Z=4, R=0.0471；后者为三斜晶系，PT空间群，晶胞参数是：a=11.123(3), b=16.564(5), c=8.653(3)A °;α=95.16(3), β=95.63(3), γ=74.71(3) °;V=1527.0A °~3。Z=2，R=0.0303。实验结果还表明，μ_2-和μ_3-氯桥键是LnCl_3-LiCl-THF类配合物中最基本、最重要的配位键，这种键是通过多重键的方式起着稳定分子结构的作用。当进行与有机配体的交换反应时，由于它们的特殊稳定性，能起到阻止轻稀土有机配合物歧化反应的作用。II环戊二烯基轻镧系氯化物的合成及其稳定性的研究对(G_5H_5)_3Ln·THF和LnCl_3·3LiCl-THF (Ln=La, Nd)溶液反应的研究表明，由于μ_2-氯桥键的作用，轻稀土环戊二烯基化合物中环戊二烯基的再分配反应，在0℃或室温下都能迅速进行。通过两者不同的摩尔比反应，经元素分析、红外光谱、~1H NMR和质谱鉴定，方便地合成了C_5H_5 LnCl_2·2LiCl·5THF和(C_5H_5)_2LnCl.LiCl·nTHF (Ln=La, Nd)等配合物。这一结果表明(C_5H_5)_2LnCl.LiCl·nTHF配合物不仅能稳定地存在于THF溶液中，而且能在一定条件下析出结晶。对(C_5H_5)_2LaCl.LiCl·4THF的晶体结构测定表明，该晶体属于正交晶系，Pc2m空间群。a=12.306(4), b=23.056(6), c=26.701(11)A°; V=7575.81A°~3;而(C_5H_5)_2LaCl·LiCl(DME)_2THF晶体则属于六方晶系，a=12.967(4), b=12.967(4), c=24.108(10)A°;V=3510 A°~3。通过(G_5H_5)_3Ln·THF与LnCl_3·3THF (Ln=La, Nd)的反应进一步研究了轻稀土环戊二烯基氯化物的稳定性。经元素分析，红外光谱和晶体结构分析表明合成了[(η~5-C_5H_5)_4La_3Cl_5·3THF]_2·9THF和(C_5H_5)_2 NdCl·THF配合物，前者属于三斜晶系，P1空间群。a=11.690(3), b=11.750(5), c=18.433(6)A°; α=98.75(3), β=95.62(3), γ=118.92(2)°; V=2147.06 A°~3. Z=1, R=0.099。对环戊二烯基轻稀土氯化物的稳定性进行了较详细地讨论。结果表明，THF的用量和化合物的溶解度是影响产物组成的决定因素。当THF的量不足以溶解所生成的产物时，就会歧化成溶解度最大((C_5H_5)_3Ln·THF)和最小(LnCl_3·nTHF)的两种组分。反之，环戊二烯基轻稀土化合物(Ln=La, Nd)中环戊二烯基的再分配反应就能顺利进行。经元素分析和结构测定，在((C_5H_5)_3Nd·THF)和NdCl_3·LiCl-THF溶液的反应体系中，偶然分离得到了[(η~5-C_5H_5)_4Nd_4(μ_4-o)(μ_2-Cl)_8] [Li(DMP)_2THF]_2这一不合常规的化合物，其晶体属于正交晶系，Pna2,空间群a=19.010(7), b=23.231(6), c=14.180(4); V=6261.91 A°~3。Z=4, R=0.054。说明在一定条件下,μ-氧桥键也起到了稳定分子结构的作用。推测了各类环戊二烯基轻稀土氯化物在THF中的合成反应机理,在LiCl存在的反应体系中Ln cl cl Li桥键能与环戊二烯基发生交换反应;在(C_5H_5)_3Ln·THF和LnCl_3·3THF的反应体系中,首先存在着LnCl_3分子之间的互相作用，因而易于形成双核或多核配合物。这类配合物以晶体形式析出时，易于发生结构上的变化，即化合物的结晶形态与溶液中的形态不一定相同。探索了环戊二烯基烯丙基稀土化合物新的合成方法。找到了真空加热脱水制备氯化稀土的最佳条件，其产物纯度在97%以上。通过加入Co_3O_4/Wo_3催化助燃剂的方法，提高了测定稀土有机化合物中碳含量的准确性。

Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7x10(15)n/cm(2)

Current-based microscopic defect analysis methods with optical filling techniques, namely current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC), have been used to study defect levels in a high resistivity silicon detector (p(+)-n-n(+)) induced by very high fluence neutron (VHFN) irradiation (1.7x10(15) n/cm(2)). As many as fourteen deep levels have been detected by I-DLTS. Arrhenius plots of the I-DLTS data have shown defects with energy levels ranging from 0.03 eV to 0.5 eV in the energy band gap. Defect concentrations of relatively shallow levels (E(t) < 0.33 eV) are in the order of 10(13)cm(-3), while those for relatively deep levels (E(t) > 0.33 eV) are in the order of 10(14) cm(-3). TSC data have shown similar defect spectra. A full depletion voltage of about 27,000 volts has been estimated by C-V measurements for the as-irradiated detector, which corresponds to an effective space charge density (N-eff) in the order of 2x10(14) cm(-3). Both detector leakage current and full depletion voltage have been observed to increase with elevated temperature annealing (ETA). The increase of the full depletion voltage corresponds to the increase of some deep levels, especially the 0.39 eV level. Results of positron annihilation spectroscopy have shown a decrease of total concentration of vacancy related defects including vacancy clusters with ETA, suggesting the breaking up of vacancy clusters as possible source of vacancies for the formation of single defects during the reverse anneal.

A RESONANT RAMAN-STUDY ON PHONONS IN GAINAS/ALINAS MULTIPLE-QUANTUM WELLS

The LO phonon modes in the barrier layers of a GaInAs/AlInAs multiple quantum well structure are investigated by resonance Raman scattering (RRS), the excitation laser photon energy tuned to resonate with the above barrier interband transition energy. The resonance enhancement of LO phonon peaks are shown to be caused by Frohlich electron-phonon interaction. The pressure-dependent profiles for both AlAs-like (LO(2) mode) and InAs-like (LO(1) mode) Raman peak intensities are well fitted by the Gaussian lineshape. The shift between these two profiles can be explained by the outgoing RRS mechanism, providing information on the pressure-induced shift of the excitonic transition energy. The amplitude ratios of the two profiles are close to 1, showing a well defined two-mode behavior and the nearly equal polarizability for Al-As and In-As bonds in AlInAs alloy.

基于3×3耦合器的光纤光栅激光传感系统波长解调方案的改进

采用3×3耦合器的光纤光栅激光传感系统(FBGLS)的波长解调结果依赖于3×3耦合器的物理特性,解调结果会因3×3耦合器三路输出的直流项、干涉条纹可见度和相位差参数的不稳定而发生一定程度的失真。理论推导给出了标定参数的方法并实现了计算机编程,能够在较大信号时实时给出标定结果,同时给出了相应的解调方案。计算机模拟发现采用上述方法消除了由3×3耦合器三路输出的参数不稳定带来的谐波,实验中解调结果的对比表明该方法带来一定程度的改善,和标准参考传感器测量结果有很高的相关性,此外基于该解调方案的光纤光栅激光传感系统具有较高的分辨率、动态范围和线性度。

注入锁定掺铒光纤环形腔激光器及波长调谐技术

研究了掺铒光纤环形腔激光器（EDFRL）的注入锁定现象，提出了一种实现可调谐的单纵模EDFRL波长及功率稳定的新方法，即利用注入锁定技术向法布里．珀罗可调滤波器结合复合腔结构的EDFRL腔内注入低功率的连续光，使某一纵模在注入连续光的基础上起振．这个纵模在对增益介质的竞争中可以稳定地占据优势，从而与注入信号发生锁定，实现激光器输出光谱的稳定．实验得到激光器在1527．4～1561．9nm范围内波长可调，输出功率〉0．6dBm，信噪（SNR）〉43dB；输出光波长与功率抖动分别〈0．01nm和≤0．02dB，且线宽约为1.4kHz。

Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler

A novel InGaAs(LT-In0.25 Ga0.75 As) absorber grown by metal organic chemical vapor deposition at low temperature is presented.Using it as well as an output coupler,passive mode locking,which produces pulses as short as several hundred picoseconds for diode-end-pumped Nd∶YAG laser at 1.06μm,is realized.The pulse frequency is 150MHz.