Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier

The theoretical optimization of tensile strained InGaAsP/InGaAsP MQW for 1.5μm window polarization-independent semiconductor optical amplifier is reported. The valence-band structure of the MQw is calculated by using K·P method, in which 6×6 Luttinger effective-mass Hamiltonian is taken into account. LThe polarization dependent optical gain is calculated with various well width, strain, and carrier density.

A novel high sensitivity CE-PTHPT for optical fiber communication

Planar punch through heterojunction phototransistors with a novel emitter control electrode and ion- implanted isolation (CE-PTHPT) are investigated. The phototransistors have a working voltage of 3-10V and high sensitivity at low input power. The base of the transistor is completely depleted under operating condition. Base current is zero. The CE-PTHPT has an increased speed and a decreased noise. The novel CE-PTHPT has been fabricated in this paper. The optical gain of GaAlAs/GaAs CE-PTHPT for the incident light power 1.3 and 43nw with the wavelength of 0.8 mu m reached 1260 and 8108. The input noise current calculated is 5.46 x 10(-16) A/H-z(1/2). For polysilicon emitter CE-PTHPT, the optical gain is 3083 at the input power of 0.174 mu w. The optical gain of InGaAs/InP CE-PTHPT reaches 350 for an incident power of 0.3 mu w at the wavelength of 1.55 mu m. The CE-PTHPT detectors is promising as photo detectors for optical fiber communication system.

铒镱共掺磷酸盐玻璃的激光性质

制备了镱铒共掺的磷酸盐玻璃并研究了室温下LD泵浦的连续激光输出性质。在泵浦功率为496mW时实现了最大输出功率77mW。讨论了在不同玻璃样品厚度和谐振腔长度时的斜率效率的变化以及在不同玻璃样品厚度，泵浦功率和谐振腔长度时的不同激光模式竞争的动力学行为。结果表明：激光光谱受到光学增益和光学损耗相对大小的限制。

CW-pumped evanescent amplification based on side-polished fiber with heavily Er3+-doped glass overlay

A novel diffractive-pumping scheme is proposed to improve the evanescent amplification using blazed fiber grating for the first time. We also investigate the cw-pumped-evanescent amplification at 1.55 mu m wavelength with the relative optical gain pumped at 1480 nm of around 2 dB based on side-polished fiber with the effective interaction length as long as 16 mm and with a heavily Er3+-doped (N-Er(3+) > 1.19 x 10(21) ions/cm(3)), low refractive index (n(1550) < 1.47) glass overlay, which has no concentration quenching (tau(f) = 9.0 ms).

Broadband Emitting Superluminescent Diodes With InAs Quantum Dots in AlGaAs Matrix

Superluminescent diodes were fabricated by using InAs-AlGaAs self-assembled quantum dots (QDs) as the active region. The ultrawide emitting spectrum of 142 nm was achieved. The short migration length of indium adatoms on AlGaAs surface increases the size dispersion of InAs QDs, resulting in the broadening of optical gain spectrum.

Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes

Polarization-resolved edge-emitting electroluminescence (EL) studies of InGaN/GaN MQWs of wavelengths from near-UV (390 nm) to blue (468 nm) light-emitting diodes (LEDs) are performed. Although the TE mode is dominant in all the samples of InGaN/GaN MQW LEDs, an obvious difference of light polarization properties is found in the InGaN/GaN MQW LEDs with different wavelengths. The polarization degree decreases from 52.4% to 26.9% when light wavelength increases. Analyses of band structures of InGaN/GaN quantum wells and luminescence properties of quantum dots imply that quantum-dot-like behavior is the dominant reason for the low luminescence polarization degree of blue LEDs, and the high luminescence polarization degree of UV LEDs mainly comes from QW confinement and the strain effect. Therefore, indium induced carrier confinement (quantum-dot-like behavior) might play a major role in the polarization degree change of InGaN/GaN MQW LEDs from near violet to blue.

Intraband relaxation and its influences on quantum dot lasers

A comprehensive two-level numerical model is developed to describe carrier distribution in a quantum-dot laser. Light-emission spectra with different intraband relaxation rates (2ps, 7.5ps and 20ps) are calculated and analysed to investigate the influence of relaxation rates on performance of the quantum-dot laser. The results indicate that fast intraband relaxation favours not only the ground state single mode operation but also the higher injection efficiency.

Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well

The band structures of wurtzite ZnO are calculated using the empirical pseudopotential method (EPM). The 8 parameters of the Zn and O atom pesudopotential form factors with Schluter's formula are obtained. The effective mass parameters are extracted by using k.p Hamiltonian to fit the EPM results. The calculated band edge energies (E-g, E-A, E-B, and E-C) at Gamma point are in good agreement with experimental results. The ordering of ZnO at the top of valence band is found to be A(Gamma(7))-B(Gamma(9))-C(Gamma(7)) due to a negative spin-orbit (SO) splitting. Based on the band parameters obtained, the valence hole subbands of wurzite ZnO/MgxZn1-xO tensile-strained quantum wells (QWs) with different well widths and Mg compositions are calculated using 6-band k.p method. (c) 2005 Elsevier B.V. All rights reserved.

Influence of a tilted cavity on quantum-dot optoelectronic active devices

Quantum-dot laser diodes (QD-LDs) with a Fabry-Perot cavity and quantum-dot semiconductor optical amplifiers (QD-SOAs) with 7° tilted cavity were fabricated. The influence of a tilted cavity on optoelectronic active devices was also investigated. For the QD-LD, high performance was observed at room temperature. The threshold current was below 30 mA and the slope efficiency was 0.36 W/A. In contrast, the threshold current of the QD-SOA approached 1000 mA, which indicated that low facet reflectivity was obtained due to the tilted cavity design.A much more inverted carrier population was found in the QD-SOA active region at high operating current, thus offering a large optical gain and preserving the advantages of quantum dots in optical amplification and processing applications. Due to the inhomogeneity and excited state transition of quantum dots, the full width at half maximum of the electroluminescence spectrum of the QD-SOA was 81.6 nm at the injection current of 120 mA, which was ideal for broad bandwidth application in a wavelength division multiplexing system. In addition, there was more than one lasing peak in the lasing spectra of both devices and the separation of these peak positions was 6-8 nm,which is approximately equal to the homogeneous broadening of quantum dots.

Broadband high-gain optical parametric chirped-pulse amplification near 780 nm with LBO-I near-degenerate near-collinear phase match

Near-degenerative near-collinear phase-match geometry for broadband optical parametric chirped-pulse amplification (OPCPA) at approximate to 780 nm is calculated in comparison with nondegenerate noncollinear phase-match geometry. In an experiment on LBO-I near-degenerate near-collinear OPCPA, high gain with broad gain bandwidth (approximate to 71 nm, FWHM) at approximate to 780 nm is achieved by using an approximate to 390-nm pumping pulse. The stretched broadband chirped signal pulse near 780 nm is amplified to approximate to 412 mu J with a pumping energy of approximate to 15 mJ, and the total gain is > 3.7 X 10(6), which agrees well with the calculation. For a broadband (covering approximate to 100 nm) chirped signal pulse, the theoretical gain bandwidth has been attained experimentally for the first time. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Broadband high-gain optical parametric chirped-pulse amplification near 780 nm with LBO-I near-degenerate near-collinear phase match

Near-degenerative near-collinear phase-match geometry for broadband optical parametric chirped-pulse amplification (OPCPA) at approximate to 780 nm is calculated in comparison with nondegenerate noncollinear phase-match geometry. In an experiment on LBO-I near-degenerate near-collinear OPCPA, high gain with broad gain bandwidth (approximate to 71 nm, FWHM) at approximate to 780 nm is achieved by using an approximate to 390-nm pumping pulse. The stretched broadband chirped signal pulse near 780 nm is amplified to approximate to 412 mu J with a pumping energy of approximate to 15 mJ, and the total gain is > 3.7 X 10(6), which agrees well with the calculation. For a broadband (covering approximate to 100 nm) chirped signal pulse, the theoretical gain bandwidth has been attained experimentally for the first time. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Investigation of gain recovery for InAs/GaAs quantum dot semiconductor optical amplifiers by rate equation simulation

The gain recoveries in quantum dot semiconductor optical amplifiers (QD SOAs) are numerically studied by rate equation simulation. Similar to the optical pump-probe experiment, the injection of double 150 fs optical pulses is used to simulate the gain recovery of a weak continuous signal under different injection levels, inhomogeneous broadenings, detuning wavelengths, and pulse signal energies for the QD SOAs. The obtained gain recoveries are then fitted by a response function with multiple exponential terms to determine the response times. The gain recovery can be described by three exponential terms with the time constants, which can be explained as carrier relaxation from the excited state to the ground state, carrier captured by the excited state from the wetting layer, and the supply of the wetting layer carriers. The fitted lifetimes decrease with the increase of the injection currents under gain unsaturation, slightly decrease with the decrease of inhomogeneous broadening of QDs, and increase with the increase of detuning wavelength between continuous signal and pulse signal and the increase of the pulse energy.

NUMERICAL ANALYSIS OF A NOVEL 980nm MICROCAVITY SEMICONDUCTOR OPTICAL AMPLIFIER WITH HIGH GAIN AND LOW NOISE

A novel microcavity semiconductor optical amplifier ( MCSOA) was proposed by incorporating top and bottom distributed Bragg reflectors ( DBRs) into the waveguide structure of conventional traveling-wave semiconductor optical amplifiers(TW-SOAs). The incoming( outgoing) light beam incidented onto (escaped from) the waveguide structure at a oblique angle through two optical windows, where the top DBR was etched away, and anti-reflection coating was deposited. The light beams inside the optical cavity were reflected repeatedly between two DBRs and propagated along waveguide in a zigzag optical path. The performance of the MCSOA was systematically investigated by extensive numerical simulation based on a traveling-wave model by taking into account the comprehensive effects of DBRs on both the amplification of signals and the filtering of spontaneous emission( SE). Our results show that the MCSOA is capable of achieving a fiber-to-fiber gain as high as 40dB and a low noise figure is less than 3.5dB.

Numerical analysis of gain saturation, noise figure, and carrier distribution for quantum-dot semiconductor-optical amplifiers

The gain saturation behaviors and noise figure are numerically analyzed for quantum-dot semiconductor optical amplifiers (QD-SOAs). The carrier and photon distributions in the longitudinal direction as well as the photon energy dependent facet reflectivity are accounted in the rate equations, which are solved with output amplified spontaneous emission spectrum as iterative variables. The longitudinal distributions of the occupation probabilities and spectral-hole burning are presented for electrons in the excited and ground states of quantum dots. The saturation output power 19.7 dBm and device gain 20.6 dB are obtained for a QD-SOA with the cavity length of 6 rum at the bias current of 500 mA. The influences of them electron intradot relaxation time and the QD capture time on the gain spectrum are simulated with the relaxation time of 1, 30, and 60 ps and capture time of 1, 5, and 10 ps. The noise figure as low as 3.5 dB is expected due to the strong polarization sensitive spontaneous emission. The characteristics of gain saturation and noise figure versus input signal power for QD-SOAs are similar to that of semiconductor. linear optical amplifiers with gain clamping by vertical laser fields.

Detailed model and investigation of gain saturation and carrier spatial hole burning for a semiconductor optical amplifier with gain clamping by a vertical laser field

A detailed model for semiconductor linear optical amplifiers (LOAs) with gain clamping by a vertical laser field is presented, which accounts the carrier and photon density distribution in the longitudinal direction as well as the facet reflectivity. The photon iterative method is used in the simulation with output amplified spontaneous emission spectrum in the wide band as iterative variables. The gain saturation behaviors and the noise figure are numerically simulated, and the variation of longitudinal carrier density with the input power is presented which is associated with the ON-OFF state of the vertical lasers. The results show that the LOA can have a gain spectrum clamped in a wide wavelength range and have almost the same value of noise figure as that of conventional semiconductor optical amplifiers (SOAs). Numerical results also show that an LOA can have a noise figure about 2 dB less than that of the SOA gain clamped by a distributed Bragg reflector laser.