Application of Similarity Theory to the Characterization of Non-Transferred Laminar Plasma Jet Generation

Laminar-flow non-transferred DC plasma jets were generated by a torch with an inter-electrode insert by which the arc column was limited to a length of about 20 mm. Current–voltage characteristics, thermal efficiency and jet length, a parameter which changes greatly with the generating parameters in contrast with the almost unchangeable jet length of the turbulent plasma, were investigated systematically, by using the similarity theory combined with the corresponding experimental examination. Formulae in non-dimensional forms were derived for predicting the characteristics of the laminar plasma jet generation, within the parameter ranges where no transfer to turbulent flow occurs. Mean arc temperature in the torch channel and mean jet-flow temperature at the torch exit were obtained, and the results indicate that the thermal conductivity feature of the working gas seems to be an important factor affecting thermal efficiency of laminar plasma generation.

Experimental Study on the Thermal Argon Plasma Generation and Jet Length Change Characteristics at Atmospheric Pressure

The generation, jet length and flow-regime change characteristics of argon plasma issuing into ambient air have been experimentally examined. Different torch structures have been used in the tests. Laminar plasma jets can be generated within a rather wide range of working-gas flow rates, and an unsteady transitional flow state exists between the laminar and turbulent flow regimes. The high-temperature region length of the laminar plasma jet can be over an order longer than that of the turbulent plasma jet and increases with increasing argon flow rate or arc current, while the jet length of the turbulent plasma is less influenced by the generating parameters. The flow field of the plasma jet has very high radial gradients of plasma parameters, and a Reynolds number alone calculated in the ordinary manner may not adequately serve as a criterion for transition. The laminar plasma jet can have a higher velocity than that of an unsteady or turbulent jet. The long laminar plasma jet has good stiffness to withstand the impact of laterally injected cold gas and particulate matter. It could be used as a rather ideal object for fundamental studies and be applied to novel materials processing due to its attractive stable and adjustable properties.

Plasma-Arc Technology For The Thermal Treatment Of Chemical Wastes

Plasma-arc technology was developed to dispose of chemical wastes from a chemical plant by the Institute of Mechanics, Chinese Academy of Sciences (CAS-IMECH). A pilot plant system with this technology was constructed to destroy two types of chemical wastes. The system included shredding, mixing, and feeding subsystems, a plasma-arc reactor of 150 kW, an off-gas burning subsystem, and a scrubbing subsystem. The additives (CaO, SiO2, and Fe) were added into the reactor to form vitrified slag and capture the hazardous elements. The molten slag was quickly quenched to form an amorphous glassy structure. A direct current (DC) experimental facility of 30kW with plasma-arc technology was also set up to study the pyrolysis process in the laboratory, and the experimental results showed the cooling speed is the most important factor for good vitrified structure of the slag. According to previous tests, the destruction and removal efficiency (DRE) for these chemical wastes was more than 99.999%, and the polychlorinated biphenyls (PCBs) concentration in the solid residues was in the range of 1.28 to 12.9mg/kg, which is far below the Chinese national emission limit for the hazardous wastes. A simplified electromagneto model for numerical simulation was developed to predict the temperature and velocity fields. This model can make satisfactory maximum temperature and velocity distributions in the arc region, as well as the results by the magneto hydrodynamic approach.

Fluctuation characteristics of arc voltage and jet flow in a non-transferred dc plasma generated at reduced pressure

A torch with a set of inter-electrode inserts between the cathode and the anode/nozzle with a wide nozzle exit was designed to generate plasma jets at chamber pressures of 500–10 000 Pa. The variation of the arc voltage was examined with the change in working parameters such as gas flow rate and chamber pressure. The fluctuation in the arc voltage was recorded with an oscilloscope, and the plasma jet fluctuation near the torch exit was observed with a high-speed video camera and detected with a double-electrostatic probe. Results show that the 300 Hz wave originated from the tri-phase rectified power supply was always detected under all generating conditions. Helmholtz oscillations over 3000 Hz was detected superposed on the 300 Hz wave at gas flow rates higher than 8.8 slm with a peak to valley amplitude lower than 5% of the average voltage value. No appreciable voltage fluctuation caused by the irregular arc root movement is detected, and mechanisms for the arc voltage and jet flow fluctuations are discussed.

A small arc-heated plasma testing facility for thermal protection materials

Experimental research on a 150 kW arc-heated plasma testing facility was conducted. Stable plasma jets with different gas compositions, temperatures and velocities were obtained at chamber pressure between 400 Pa – 100 kPa. Stagnation ablation experiments were conducted on samples of typical super alloys used for thermal protection systems. The microstructure and hardness of alloys before and after ablation were compared.

Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film

Silicon-rich silicon oxide (SRSO) films are prepared by plasma-enhanced chemical vapor deposition method at the substrate temperature of 200degreesC. The effect of rapid thermal annealing and hydrogen plasma treatment on tire microstructure and light-emission of SRSO films are investigated in detail using micro-Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) spectra. It is found that the phase-separation degree of the films decreases with increasing annealing temperature from 300 to 600degreesC, while it increases with increasing annealing temperature from 600 to 900degreesC. The light-emission of the films are enhanced with increasing annealing temperature up to 500degreesC, while it is rapidly reduced when the annealing temperature exceeds 600degreesC. The peak position of the PL spectrum blueshifts by annealing at the temperature of 300degreesC, then it red-shifts with further raising annealing temperature. The following hydrogen plasma treatment results in a disproportionate increase of the PL intensity and a blueshift or redshift of the peak positions, depending on the pristine annealing temperature. It is thought that the size of amorphous silicon clusters, surface structure of the clusters and the distribution of hydrogen in the films can be changed during the annealing procedure. The results indicate that not only cluster size but also surface state of the clusters plays an important role in the determination of electronic structure of the amorphous silicon cluster and recombination process of light-generated carriers.

Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy

Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy were studied. Photoluminescence measurements on a series of samples with different well widths and N compositions were used to evaluate the effects. The intermixing of GaNAs and GaAs layers was clearly enhanced by the presence of a SiO2-cap layer. However, it was strongly dependent on the N composition. After annealing at 900 degreesC for 30 s, a blueshift up to 62 meV was observed for the SiO2-capped region of the sample with N composition of 1.5%, whereas only a small blueshift of 26 meV was exhibited for the bare region. For the sample with the N composition of 3.1%, nearly identical photoluminescence peak energy shift for both the SiO2-capped region and the bare region was observed. It is suggested that the enhanced intermixing is mainly dominated by SiO2-capped layer induced defects-assisted diffusion for the sample with smaller N composition, while with increasing N composition, the diffusion assisted by interior defects become predominant. (C) 2001 American Institute of Physics.

Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy

We have studied the effect of rapid thermal annealing (RTA) on GaInNAs/GaAs quantum wells (QWs) grown by molecular-beam epitaxy using a dc plasma as the N source. It was found that RTA at low temperature (LT, 650 degrees C) and high temperature (HT, 900 degrees C) could both improve the QW quality significantly. To clarify the mechanism of quality improvement by RTA, a magnetic field perpendicular to the path of the N plasma flux was applied during the growth of the GaInNAs layers for the sake of comparison. It was found that LT-RTA mainly removed dislocations at interfaces related to the ion bombardment, whereas, HT-RTA further removed dislocations originating from the growth. LT-RTA caused only a slight blueshift of photoluminescence peak wavelength, probably due to defect-assisted interdiffusion of In-Ga at the QW interfaces. The blueshift caused by HT-RTA, on the other hand, was much larger. It is suggested that this is due to the fast defect-assisted diffusion of N-As at the QW interfaces. As defects are removed by annealing, the diffusion of In-Ga at interfaces would be predominant. (C) 2000 American Institute of Physics. [S0003- 6951(00)01535-7].

Effects of Rapid Thermal Annealing on OpticalProperties of GaInNAs/ GaAs Single Quantum Well Grown by Plasma- Assisted Molecular Beam Epitaxy

国家自然科学基金,国家攀登计划

Instabilities in a non-transferred direct current plasma torch operated at reduced pressure

Using an oscilloscope, a high-speed video camera and a double-electrostatic probe system, the periodicity and amplitude of the fluctuations in arc voltage, jet luminance and ion saturation current of a plasma jet were monitored to investigate various sources of instabilities and their effects in a non-transferred dc plasma torch operated at reduced pressure. The results show that besides a 300 Hz main fluctuation inherited from the power supply, arc voltage fluctuation of 3–4 kHz with an amplitude less than 5% of the mean voltage was mainly affected by the total gas flow rate. The arc voltage fluctuation can affect the energy distribution of the plasma jet which is detectable by electrostatic probes and a high-speed video camera. The steadiness of energy transfer is also affected by the laminar or turbulent flow state of the plasma.

Sulfonated poly(ether ether ketone)/aminopropyltriethoxysilane/phosphotungstic acid hybrid membranes with non-covalent bond: Characterization, thermal stability, and proton conductivity

Sulfonated poly(ether ether ketone) (SPEEK) and aminopropyltriethoxysilane (KH550) hybrid membranes doped with different weight ratio of phosphotungstic acid (PWA) were prepared by the casting procedure, as well as PWA as a catalyst for sol-gel process of KH550. The chemical structures of hybrid membranes were characterized by energy dispersive X-ray spectrometry (EDX) and Fourier transform infrared spectroscopy (FTIR). The morphology of hybrid membranes was investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results had proved the uniform and homogeneous distribution of KH550 and PWA in these hybrid membranes.

Arc Voltage Fluctuation in DC Laminar and Turbulent Plasma Jets Generat Ion

Arc voltage fluctuations in a direct current (DC) non-transferred arc plasma generator are experimentally studied, in generating a jet in the laminar, transitional and turbulent regimes. The study is with a view toward elucidating the mechanism of the fluctuations and their relationship with the generating parameters, arc root movement and flow regimes. Results indicate that the existence of a 300 Hz alternating current (AC) component in the power supply ripples does not cause the transition of the laminar plasma jet into a turbulent state. There exists a high frequency fluctuation at 4 kHz in the turbulent jet regime. It may be related to the rapid movement of the anode attachment point of the arc.

Thermal-mechanical interface crack behaviour of a surface mount solder joint

The effect of thermal-mechanical loading on a surface mount assembly with interface cracks between the solder and the resistor and between the solder and the printed circuit board (PCB) was studied using a non-linear thermal finite element analysis. The thermal effect was taken as cooling from the solder eutectic temperature to room temperature. Mechanical loading at the ends of the PCB was also applied. The results showed that cooling had the effect of causing large residual shear displacement at the region near the interface cracks. The mechanical loading caused additional crack opening displacements. The analysis on the values of J-integral for the interface cracks showed that J-integral was approximately path independent, and that the effect of crack at the solder/PCB interface is much more serious than that between the component and solder.