112 resultados para Mineralogia, Cementi a base minerale, Cementi biomedici, XRD, Cambiamenti dimensionali


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Peptide nucleic acids (PNAs) are nucleic acid analogs with the deoxyribose phosphate backbone replaced by pseudo-peptide polymers to which the nucleobases are linked. The achiral, uncharged and rather flexible properties of the peptide backbone permit peptide nucleic acids more potential than oligonucleotides in application to antisence and antigenic reagents. The process of PNA binding to DNA duplex and forming triplex is the first step of PNA interacting with PNA. But there are no PNA.2DNA triplex crystal data up to date and little has been reported on the structure features and the force of the PNA.2DNA triplex. In this work, PNA(T).DNA(AT) triplexes are successfully built and the structures and forces to stabilize the triplex after optimizations and molecule dynamics are systematically examined, which are expected to aid in the application of PNAs as anticense and antigene agents.

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Concentration of trace elements measured by dry weight basis has become more commonly used in recent studies on cetaceans than wet weight basis, which was used more in earlier studies. Because few authors present moisture content data in their papers, it is difficult to compare the concentrations of trace elements between various studies. Therefore, we felt that it would be useful if a reference conversion factor (CF) for tissue types could be found to convert between wet weight and dry weight data on trace element concentrations. We determined the moisture contents of 14 tissues of Dall's porpoise (Phocoenoides dalli), and then, calculated the CF values for those tissues. Because the moisture content of each tissue differs from other tissues, it is necessary to use a specific CIF for each tissue rather than a general CF for several tissues. We have also found that CIF values for Dall's porpoise tissues are similar to the same tissues in other cetaceans. Therefore CF values from Dall's porpoise can be reliably used to convert between wet and dry weight concentrations for other cetacean tissues as reference data. (C) 2002 Elsevier Science Ltd. All rights reserved.

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With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-aligned large-area multi-linger configuration power SiGe heterojunction bipolar transistor (HBT) device (with an emitter area of about 880 mu m(2)) is fabricated with 2 mu m double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVCEO is 10 V and the collector-base junction breakdown voltage BVCBO is 16 V with collector doping concentration of 1 x 10(17) cm(-3) and thickness of 400 nm. The device exhibited a maximum oscillation frequency f(max) of 35.5 GHz and a cut-off frequency f(T) of 24.9 GHz at a dc bias point of I-C = 70 mA and the voltage between collector and emitter is V-CE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from 0 dBm to 21 dBm. A maximum output power of 29.9 dBm (about 977 mW) is obtained at an input power of 18.5 dBm with a gain of 11.47 dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, f(max) and f(T) are improved by about 83.9% and 38.3%, respectively.

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N-p-n Si/SiGe/Si heterostructure has been grown by a disilane (Si2H6) gas and Ge solid sources molecular beam epitaxy system using phosphine (PH3) and diborane (B2H6) as n- and p-type in situ doping sources, respectively. X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS) measurements show that the grown heterostructure has a good quality, the boron doping is confined to the SiGe base layer, and the Ge has a trapezoidal profile. Postgrowth P implantation was performed to prepare a good ohmic contact to the emitter. Heterojunction bipolar transistor (HBT) has been fabricated using the grown heterostructure and a common-emitter current gain of 75 and a cut-off frequency of 20 GHz at 300 K have been obtained. (C) 2001 Elsevier Science B.V. All rights reserved.

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The acid-base stabilities of Al-13 and Al-30 in polyaluminum coagulants during aging and after dosing into water were studied systematically using batch and flow-through acid-base titration experiments. The acid decomposition rates of both Al-13 and Al-30 increase rapidly with the decrease in solution pH. The acid decompositions of Al-13 and Al-30 with respect to H+ concentration are composed of two parallel first-order and second-order reactions, and the reaction orders are 1.169 and 1.005, respectively. The acid decomposition rates of Al-13 and Al-30 increase slightly when the temperature increases from 20 to ca. 35 A degrees C, but decrease when the temperature increases further. Al-30 is more stable than Al-13 in acidic solution, and the stability difference increases as the pH decreases. Al-30 is more possible to become the dominant species in polyaluminum coagulants than Al-13. The acid catalyzed decomposition and followed by recrystallization to form bayerite is one of the main processes that are responsible for the decrease of Al-13 and Al-30 in polyaluminum coagulants during storage. The deprotonation and polymerization of Al-13 and Al-30 depend on solution pH. The hydrolysis products are positively charged, and consist mainly of repeated Al-13 and Al-30 units rather than amorphous Al(OH)(3) precipitates. Al-30 is less stable than Al-13 upon alkaline hydrolysis. Al-13 is stable at pH < 5.9, while Al-30 lose one proton at the pH 4.6-5.75. Al-13 and Al-30 lose respective 5 and 10 protons and form [Al-13] (n) and [Al-30] (n) clusters within the pH region of 5.9-6.25 and 5.75-6.65, respectively. This indicates that Al-30 is easier to aggregate than Al-13 at the acidic side, but [Al-13] (n) is much easier to convert to Alsol-gel than [Al-30] (n) . Al-30 possesses better characteristics than Al-13 when used as coagulant because the hydrolysis products of Al-30 possess higher charges than that of Al-13, and [Al-30] (n) clusters exist within a wider pH range.

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We have fabricated In_0.53Ga_0.47As/AlAs/InP resonant tunneling diodes (RTDs) based on the air-bridge technology by using electron beam lithography processing.The epitaxial layers of the RTD were grown on semi-insulating (100) InP substrates by molecular beam epitaxy.RTDs with a peak current density of 24.6 kA/cm~2 and a peak-to-valley current ratio of 8.6 at room temperature have been demonstrated.

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High performance InP/InGaAs heterojunction bipolar transistors(HBTs) have been widely used in high-speed electronic devices and optoelectronic integrated circuits. InP-based HBTs were fabricated by low pressure metal organic chemical vapor deposition(MOCVD) and wet chemical etching. The sub-collector and collector were grown at 655 ℃ and other layers at 550 ℃. To suppress the Zn out-diffusion in HBT, base layer was grown with a 16-minute growth interruption. Fabricated HBTs with emitter size of 2.5×20 μm~2 showed current gain of 70~90, breakdown voltage(BV_(CE0))>2 V, cut-off frequency(f_T) of 60 GHz and the maximum relaxation frequency(f_(MAX)) of 70 GHz.