“克洛曲 (复方克痛宁 )研究”获云南省科学技术二等奖

由中国科学院昆明动物研究所熊郁良、王婉瑜研究员主持的该项研究工作 ,在国际上首次发明了一种高效、广谱 ,具有镇痛、戒毒双重作用的新型不成瘾药物———克洛曲。该药以蛇毒神经毒为主 ,辅以起效快的曲马多、布洛芬 ,组成一个全面作用于中枢、外周神经传导突触后Ａｃｈ及植物神经系统的新复方制剂 ,在药效学、药理学及正交试验方面证明均优于国内外现有镇痛药。它克服了神经毒 (克痛宁 )起效慢、曲马多仅作用于中枢镇痛和可能产生耐药性或会成瘾、布洛芬仅作用于植物神经解热镇痛的缺点 ,将三条作用途径组成“克洛曲” ,充分发挥了各药品的特点 ,形成起效快、镇痛时间长、高效、广谱、毒性低的新型镇痛药物 ;该药还具有戒毒作用 ,且不成瘾 ,对患者免疫功能及性功能恢复都有显著效果。该工作为毒素研究和应用开创了一条新途径 ,有关论文在国际会议多次报道并全文刊登 ,受到好评。克洛曲作为镇痛药物已经卫生部新药办公室及医药管理局批准并获生产批文 ,列入部颁试验标准。 2 0 0 0年已在全国上市 ,并在云南省及全国部分地区作为戒毒辅助用药推广应用。目前正在进一步补充完善材料 ,拟报批为戒毒特药。该工作1998年经中国科学院组织专家鉴定 。

Cu~(2+)对一种绿球藻生长及生理特性的影响

研究了不同浓度的Cu2+(0.01,0.1,1,10,50,100,200mg/L)对绿球藻(Chlorococcumsp.)生长、形态结构及生理特性的影响.结果表明,Cu2+对绿球藻的显微结构、生长及生理状态的影响比较显著.与对照BG11培养的绿球藻比较,0.01～1mg/LCu2+浓度下培养的绿球藻,细胞壁无明显增厚,色素没有多大变化,但蛋白核由一个变为多个;而在高浓度(10～200mg/LCu2+)下,细胞壁明显增厚为多层,色素减少,蛋白核减少并回复到1个或消失.低浓度Cu2+(0.01,0.1mg

鞭毛虫的扫描电镜样品制备

针对鞭毛虫样品制备中的难点,以Bodomorphaminima ,Hollande 1942为材料,对一类个体微小的异养性鞭毛虫的扫描电镜样品的制备做了初步探讨。以载玻片为载体,0 .1%的多聚赖氨酸为粘附剂,2 %的戊二醛为固定剂,采用临界点法干燥,获得了较为满意的扫描电镜照片。该技术可简化样品制备步骤,减少样品损失,对于其他原生动物样品和游离细胞样品扫描电镜的制备也有积极的借鉴意义。

Enhanced Proton Conduction in Polymer Electrolyte Membranes as Synthesized by Polymerization of Protic Ionic Liquid-Based Microemulsions

Proton-conducting membranes were prepared by polymerization of microemulsions consisting of surfactant-stabilized protic ionic liquid (PIL) nanodomains dispersed in a polymerizable oil, a mixture of styrene and acrylonitrile. The obtained PIL-based polymer composite membranes are transparent and flexible even though the resulting vinyl polymers are immiscible with PIL cores. This type of composite membranes have quite a good thermal stability, chemical stability, tunability, and good mechanical properties. Under nonhumidifying conditions, PIL-based membranes show a conductivity up to the order of 1 x 10(-1) S/cm at 160 degrees C, due to the well-connected PIL nanochannels preserved in the membrane. This type of polymer conducting membranes have potential application in high-temperature polymer electrolyte membrane fuel cells.

Hillocks and hexagonal pits in a thick film grown by HVPE

A GaN film with a thickness of 250 mu m was grown on a GaN/sapphire template in a vertical hydride vapor phase epitaxy (HVPE) reactor. The full-width at half-maximum (FWHM) values of the film were 141 and 498 arcsec for the (0 0 2) and (1 0 2) reflections, respectively. A sharp band-edge emission with a FWHM of 20 meV at 50 K was observed, which corresponded to good crystalline quality of the film. Some almost circular-shaped hillocks located in the spiral growth center were found on the film surface with dimensions of 100 mu m, whose origin was related to screw dislocations and micropipes. Meanwhile, large hexagonal pits also appeared on the film surface, which had six triangular {1 0 (1) over bar 1} facets. The strong emission in the pits was dominated by an impurity-related emission at 377 nm, which could have been a high-concentration oxygen impurity. (c) 2008 Elsevier Ltd. All rights reserved.

Proof of solid state cathodoluminescence by using brightness waveform

Three different inorganic-organic hetero-junctions (A : ITO/SiO2/Alq(3)/Al, B: ITO/Alq3/SiO2/Al and C: ITO/SiO2/Alq(3)/ SiO2/Al) were fabricated. The emission can be observed only under positive bias in devices A and B, but under both biases in device C according to their brightness waveforms. With increasing voltage, the increase in blue emission in devices B and C is faster than that in green emission. This is because that the recombination of hot electrons and holes, i.e., electron-hole pairs, produced blue emission in devices B and C, and the recombination of electrons injected from Al with the accumulated holes, which are excited by hot electrons, produced green emission in device A. Hence, the emissions of the devices are attributed to not only the recombination of electrons and accumulated holes, but also the cathodoluminescence-like (CL-like) emission.

Broad-band semiconductor optical amplifiers

Broad-band semiconductor optical amplifiers (SOAs) with different thicknesses and thin bulk tensile-strained active layers were fabricated and studied. Amplified spontaneous emission (ASE) spectra and gain spectra of SOAs were measured and analyzed at different CW biases. A maximal 3 dB ASE bandwidth of 136 nm ranging from 1480 to 1616 nm, and a 3 dB optical amplifier gain bandwidth of about 90 nm ranging from 1510 to 1600 nm, were obtained for the very thin bulk active SOA. Other SOAs characteristics such as saturation output power and polarization sensitivity were measured and compared. (c) 2006 Elsevier B.V. All rights reserved.

Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating

In this letter, we present a facet coating design to delay the excited state (ES) lasing for 1310 nm InAs/GaAs quantum dot lasers. The key point of our design is to ensure that the mirror loss of ES is larger than that of the ground state by decreasing the reflectivity of the ES. In the facet coating design, the central wavelength is at 1480 nm, and the high- and low-index materials are Ta2O5 and SiO2, respectively. Compared with the traditional Si/SiO2 facet coating with a central wavelength of 1310 nm, we have found that with the optimal design the turning temperature of the ES lasing has been delayed from 90 to 100 degrees C for the laser diodes with cavity length of 1.2 mm. Furthermore, the characteristic temperature (T-0) of the laser diodes is also improved.