鞭毛虫的扫描电镜样品制备

针对鞭毛虫样品制备中的难点,以Bodomorphaminima ,Hollande 1942为材料,对一类个体微小的异养性鞭毛虫的扫描电镜样品的制备做了初步探讨。以载玻片为载体,0 .1%的多聚赖氨酸为粘附剂,2 %的戊二醛为固定剂,采用临界点法干燥,获得了较为满意的扫描电镜照片。该技术可简化样品制备步骤,减少样品损失,对于其他原生动物样品和游离细胞样品扫描电镜的制备也有积极的借鉴意义。

PFU微型生物群落采样法研究有机氯污染物在水中相间分布

运用PFU微型生物群落采样法在武汉东湖取样研究了六六六、滴滴涕、六氯苯等有机氯污染物在水中相间分布。将PFU(Polyurethanefoamunit)取样得到的挤出液 ,经细胞固定、超声、消解及分步萃取等不同的预处理步骤后 ,用GC ECD测定了各部分提取物中α HCH、β HCH、γ HCH、δ HCH、HCB、pp′ DDE等有机氯污染物的浓度。并用四膜虫模拟试验检验了细胞固定化、消解过程对微型生物的作用效果。结果分析表明 ,以上有机物主要以微型生物富集或颗粒物强吸附形式存在于水中 ,颗粒物弱吸附形

Hillocks and hexagonal pits in a thick film grown by HVPE

A GaN film with a thickness of 250 mu m was grown on a GaN/sapphire template in a vertical hydride vapor phase epitaxy (HVPE) reactor. The full-width at half-maximum (FWHM) values of the film were 141 and 498 arcsec for the (0 0 2) and (1 0 2) reflections, respectively. A sharp band-edge emission with a FWHM of 20 meV at 50 K was observed, which corresponded to good crystalline quality of the film. Some almost circular-shaped hillocks located in the spiral growth center were found on the film surface with dimensions of 100 mu m, whose origin was related to screw dislocations and micropipes. Meanwhile, large hexagonal pits also appeared on the film surface, which had six triangular {1 0 (1) over bar 1} facets. The strong emission in the pits was dominated by an impurity-related emission at 377 nm, which could have been a high-concentration oxygen impurity. (c) 2008 Elsevier Ltd. All rights reserved.

Proof of solid state cathodoluminescence by using brightness waveform

Three different inorganic-organic hetero-junctions (A : ITO/SiO2/Alq(3)/Al, B: ITO/Alq3/SiO2/Al and C: ITO/SiO2/Alq(3)/ SiO2/Al) were fabricated. The emission can be observed only under positive bias in devices A and B, but under both biases in device C according to their brightness waveforms. With increasing voltage, the increase in blue emission in devices B and C is faster than that in green emission. This is because that the recombination of hot electrons and holes, i.e., electron-hole pairs, produced blue emission in devices B and C, and the recombination of electrons injected from Al with the accumulated holes, which are excited by hot electrons, produced green emission in device A. Hence, the emissions of the devices are attributed to not only the recombination of electrons and accumulated holes, but also the cathodoluminescence-like (CL-like) emission.

可信计算环境证明方法研究

首先分析了可信计算环境下多远程证明实例执行的动态性、并发性、一致性等问题，提出了一个完整的可信计算环境多远程证明实例动态更新证明方案，以保证通信双方终端计算环境的可信。然后阐述了主要由计算环境组件度量算法、会话组件树计算算法和多远程证明实例证明协议组成可信计算环境证明方法。最后对该证明方法的安全性和效率进行分析，并构建原型系统论证证明方案的可行性和高性能。

Electron diffraction and photoemission studies of clean and water-covered Si(5,5,12) and Si(112) surfaces

The structure of silicon surfaces in the orientation range (113)-(5,5,12)-(337)-(112) has been investigated using high resolution LEED and photoemission both on a spherical and on flat samples. We find that Si(5,5,12) [5.3 degrees from (113) and 0.7 degrees from (937)] is the only stable orientation between (113) and (111) and confirm the result of Baski et al. [Science 269, 1556 (1995)] that it has a 2 x 1 superstructure with a very large unit cell of 7.68 x 53.5 Angstrom(2). Adsorption measurements of water on Si(5,5,12) yield a mobile precursor kinetics with two kinds of regions saturating at 0.25 and 0.15 ML which are related to adsorption on different sites. Using these results, a modified structure model is proposed. Surfaces between (113) and (5,5,12) separate into facets of these two orientations; between (5,5,12) and (112), they separate into (5,5,12) and (111) facets. (337) facets in this range may be considered as defective (5,5,12) facets.

高阶布拉格光栅在SOI脊形波导上的光刻制作

在SOI脊形波导上通过光刻的方法制作了高阶布拉格光栅.采用顶层Si厚为2μm的SOI基片,通过半导体芯片制备中的光刻工艺,在脊高为935 nm,波导宽度为2μm的脊形波导上,分别制作了刻蚀深度为565 nm和935 nm的起伏型高阶布拉格光栅,测试表明,在1540～1640 nm波长范围内,得到了大于10 dB的消光比,实现了高阶布拉格光栅在SOI脊形波导上的滤波效果.理论和实验都证明了光栅刻蚀深度的增大将有利于增加高阶布拉格光栅的耦合系数,以及光栅周期数的增加会引起更大的光栅损耗.

高质量二维光子晶体结构刻蚀掩膜版的制作方法

结合制作光子晶体结构的具体要求,研究了电子束曝光得到的电子束胶上(GaAs衬底)随实验条件变化的图形.结果表明,胶的厚度、曝光剂量、显影/定影时间等参数对图形的质量有重要影响.通过合理优化这些参数,我们得到了高质量的掩膜图形.

利用亮度波形证明固态阴极射线发光

制备了3种结构的器件：A：ITO／SiO2／Alq3／Al，B：ITO／Alq3／SiO2／Al，C：ITO／SiO2／Alq3／SiO2／Al。对于器件A和B，在正向偏压（ITO接正极）下才能观察到发光；而对于器件C，在正向和反向偏压下都可以观察到发光。随着电压升高，器件B和C产生的蓝色发光相对绿光逐渐增强。这主要是由于SiO2中的加速电子碰撞激发Alq3发光层产生热电子，并与空穴形成电子空穴对，复合产生蓝光；而对于器件A，在反向偏压下被热电子碰撞激发出的空穴与正向偏压下从Al电极进入的电子复合形成激子，产生绿色发光。这些结构的器件发光不但可来源于电子与积累的空穴复合，而且也来自固态阴极射线发光。