Plasma-Arc Technology For The Thermal Treatment Of Chemical Wastes

Plasma-arc technology was developed to dispose of chemical wastes from a chemical plant by the Institute of Mechanics, Chinese Academy of Sciences (CAS-IMECH). A pilot plant system with this technology was constructed to destroy two types of chemical wastes. The system included shredding, mixing, and feeding subsystems, a plasma-arc reactor of 150 kW, an off-gas burning subsystem, and a scrubbing subsystem. The additives (CaO, SiO2, and Fe) were added into the reactor to form vitrified slag and capture the hazardous elements. The molten slag was quickly quenched to form an amorphous glassy structure. A direct current (DC) experimental facility of 30kW with plasma-arc technology was also set up to study the pyrolysis process in the laboratory, and the experimental results showed the cooling speed is the most important factor for good vitrified structure of the slag. According to previous tests, the destruction and removal efficiency (DRE) for these chemical wastes was more than 99.999%, and the polychlorinated biphenyls (PCBs) concentration in the solid residues was in the range of 1.28 to 12.9mg/kg, which is far below the Chinese national emission limit for the hazardous wastes. A simplified electromagneto model for numerical simulation was developed to predict the temperature and velocity fields. This model can make satisfactory maximum temperature and velocity distributions in the arc region, as well as the results by the magneto hydrodynamic approach.

Seasonal variations of estrogenic compounds and their estrogenicities in influent and effluent from a municipal sewage treatment plant in China

The seasonal variations of estrogenic compounds and the estrogenicities of influent and effluent were investigated by OF chemical analysis and in vitro assay in a municipal sewage treatment plant in Wuhan (China). The levels of eight estrogenic compounds, including 17 beta-estradiol (E-2) estrone (E-1), estriol (E-3) diethylstilbestrol (DES), 17 alpha-ethinylestradiol, nonylphenol (NP), 4-tert-octylphenol (OP), and bisphenol A (BPA), were measured by gas chromatography-mass spectrometry. Total estrogenic activity of sewage was quantitatively assessed using primary cultured hepatocytes of male Megalobrama amblycephala Yih using vitellogenin as a biomarker. The E-2 equivalents (EEQs) obtained from the chemical analysis were consistent with those measured by bioassay. The natural (E-1, E-2, and E-3) and synthetic (DES) estrogens, as well as NP, were the main contributors of the total EEQs of influent and effluent in the present study. The levels of natural estrogens E-1 and E-3 in the influent and effluent were higher in winter than in summer, whereas the situation for NP and OP was the reverse. The levels of E-2, DES, and BPA varied little among different seasons. 17 alpha-Ethinylestradiol was not detected in the influent and effluent. The estrogenicities of the influent and of the primary and secondary effluents were all higher in summer than in winter. Estrogenic activities in winter mainly originated from natural (E-1, E-2, and E-3) and synthetic (DES) estrogens, whereas the increase of EEQs in summer was contributed by NP The results from chemical analysis and bioassay demonstrate that estrogenic compounds cannot be entirely removed by the existing sewage treatment process, which should be further improved to protect aquatic ecosystems and human health.

Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates

The photoluminescence (PL) characteristics of GaAsSbN/GaAs epilayers grown by molecular beam epitaxy (MBE) are carefully investigated. The results show that antimony (Sb) incorporation into GaNAs material has less influence on the N-induced localization states. For the same N concentration, GaAsSbN material can reach an emission wavelength near 1.3 mum more easily than GaInNAs material. The rapid thermal annealing (RTA) experiment shows that the annealing induced rearrangement of atoms and related blueshift in GaAsSbN epilayers are smaller than those in GaNAs and GaInNAs epilayers. The GaAsSbN material can keep a longer emission wavelength near 1.3 mum-emission even after the annealing treatment. Raman spectroscopy analysis gives further insight into the structure stability of GaAsSbN material after annealing. (C) 2004 Elsevier Ltd. All rights reserved.

Design of triangular lattice photonic crystals using genetic algorithms

Genetic Algorithms (GAs) were used to design triangular lattice photonic crystals with large absolute band-gap. Considering fabricating issues, the algorithms represented the unit cell with large pixels and took the largest absolute band-gap under the fifth band as the objective function. By integrating Fourier transform data storage mechanism, the algorithms ran efficiently and effectively and optimized a triangular lattice photonic crystal with scatters in the shape of 'dielectric-air rod'. It had a large absolute band gap with relative width (ratio of gap width to midgap) 23.8%.

Enhancement of 1.53 mu m photoluminescence from spin-coated Er-Si-O (Er2SiO5) crystalline films by nitrogen plasma treatment

Er-Si-O (Er2SiO5) crystalline films are fabricated by the spin-coating and subsequent annealing process. The fraction of erbium is estimated to be 21.5 at% based on Rutherford backscattering measurement. X-ray diffraction pattern indicates that the Er-Si-O films are similar to Er2SiO5 compound in the crystal structure. The fine structure of room-temperature photoluminescence of Er3+-related transitions suggests that Er has a local environment similar to the Er-O-6 octahedron. Our preliminary results show that the intensity of 1.53 mu m emission is enhanced by a factor of seven after nitrogen plasma treatment by NH3 gas with subsequent post-annealing. The full-width at half-maximum of 1.53 pm emission peak increases from 7.5 to 12.9 nm compared with that of the untreated one. Nitrogen plasma treatment is assumed to tailor Er3+ local environment, increasing the oscillator strength of transitions and thus the excitation/emission cross-section. (c) 2005 Elsevier B.V. All rights reserved.

Influence of rapid thermal annealing on the optical properties of gallium nitride grown by gas-source molecular-beam epitaxy

Raman scattering, photoluminescence (PL), and nuclear reaction analysis (MA) have been employed to investigate the effects of rapid thermal annealing (RTA) on GaN films grown on sapphire (0001) substrates by gas-source molecular-beam epitaxy, The Raman spectra showed the presence of the E-2 (high) mode of GaN and shift of this mode from 572 to 568 cm(-1) caused by annealing. The results showed that RTA has a significant effect on the strain relaxation caused by the lattice and thermal expansion misfit between the GaN epilayer and the substrate. The PL peak exhibited a blueshift in its energy position and a decrease in the full width at half maximum after annealing, indicating an improvement in the optical quality of the film. Furthermore, a green luminescence appeared after annealing and increased in intensity with increasing annealing time. This effect was attributed to H concentration variation in the GaN film, which was measured by NRA. A high H concentration exists in as-grown GaN, which can neutralize the deep level, and the H-bonded complex dissociates during RTA, This leads to the appearance of a luminescent peak in the PL spectrum. (C) 1998 American Institute of Physics.

HIGH-QUALITY INGAP AND INGAP/INALP MULTIPLE-QUANTUM-WELL GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Using gas-source molecular beam epitaxy, we have obtained high-quality GaInP and (AlGa)InP epilayers lattice-matched to (100) GaAs substrates. All grown layers exhibited mirror-like surfaces. For a 1.7 mum thick Ga0.5In0.5P film, the Hall electron mobility was 3400 and 30,000 CM2/V. s at 300 and 77 K, respectively. The luminescence wavelength of (AlxGa1-x)InP samples ranged from 680 nm (for GaInP) to 590 nm (for AlInP) at room temperature, and from 644 to 513 nm at 77 K. The multiple quantum well (MQW) structure with well width of 40 angstrom showed strong luminescence intensity with wavelength of 647 nm (300 K) or 622 nm (80 K). The satellite peaks can be detected in double-crystal X-ray (DCXR) diffraction measurements of the MQW samples, which indicates the perfect structural periodicity.

DISTRIBUTION FUNCTION OF A DRIFTING ELECTRON-GAS FOR GENERAL ENERGY-BAND STRUCTURES

The usual application of the Lei-Ting balance equation method for treating electron transport problems makes use of a Fermi distribution function for the electron motion relative to the center of mass. It is pointed out that this presumes the existence of a moving frame of reference that is dynamically equivalent to the rest frame of reference, and this is only true for electrons with a constant effective mass. The method is thus inapplicable to problems where electrons governed by a general energy-band dispersion E(k) are important (such as in miniband conduction). It is demonstrated that this difficulty can be overcome by introducing a distribution function for a drifting electron gas by maximizing the entropy subject to a prescribed average drift velocity. The distribution function reduces directly to the usual Fermi distribution for electron motion relative to the center of mass in the special case of E(k)=($) over bar h(2)\k\(2)/2m*. This maximum entropy treatment of a drifting electron gas provides a physically more direct as well as a more general basis for the application of the balance equation method.

THEORETICAL TREATMENT OF A3B5 CHLORIDE VAPOR-PHASE EPITAXY - GROWTH, DOPING, OPTIMIZATION

A theoretical description of chloride vapour-phase epitaxy (CVPE) has been proposed which contains two-dimensional (2D) gas-dynamic equations for transport of reactive components and kinetic equations for surface growth processes connected by nonlinear adiabatic boundary conditions. No one of these stages is supposed to be the limiting one. Calculated variations of growth rate and impurity concentrations along the growing layer fit experimental data well.

ELECTRONIC SPECTROSCOPY STUDIES OF A P2S5NH4OH TREATED GAS(100) SURFACE

Microscopic characteristics of the GaAs(100) surface treated with P2S5/NH4OH solution has been investigated by using Auger-electron spectroscopy (AES) and x-ray photoemission spectroscopy (XPS). AES reveals that only phosphorus and sulfur, but not oxygen, are contained in the interface between passivation film and GaAs substrate. Using XPS it is found that both Ga2O3 and As2O3 are removed from the GaAs surface by the P2S5/NH4OH treatment; instead, gallium sulfide and arsenic sulfide are formed. The passivation film results in a reduction of the density of states of the surface electrons and an improvement of the electronic and optical properties of the GaAs surface.

Some properties of gallium nitride films grown on (0001) oriented sapphire substrates by gas source molecular beam epitaxy

The Raman and photoreflectivity spectra of gallium nitride (GaN) films grown on (0001) oriented sapphire substrates by gas source molecular beam epitaxy (GSMBE) have been investigated. The Raman spectra showed the presence of the E-2(high) mode and a shift in the wavenumber of this mode with respect to the GaN epilayer thickness. The Raman scattering results suggest the presence of stress due to lattice and thermal expansion misfit in the films, and also indicate that the buffer layer play an important role in the deposition of high quality GaN layers. The residual stress changes from tensile to compressive as the epilayer thickness increases. Samples subjected to anneal cycles showed an increase in the mobility due probably to stress relaxation as suggested by an observed shift in the E-2(high) mode in the Raman spectra after annealing.

GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells

Using a home-made gas-source molecular beam epitaxy system, high quality InGaAs quantum wells with different well widths lattice-matched to a (001) InP substrate have been obtained. Sharp and intense peaks for each well can be well resolved in the PL spectra for the sample. For well widths larger than similar to 60 Angstrom, the exciton energies are in good agreement with those of calculation. For wells narrower than 40 Angstrom, our line widths are below the theoretical values of line width broadening due to one monolayer interface fluctuation, showing that the interface fluctuation of our sample is within one monolayer.

Hydrothermal growth and gas sensing property of flower-shaped SnS2 nanostructures

Unusual 3D flower-shaped SnS2 nanostructures have been synthesized using a mild hydrothermal treatment in the presence of octyl-phenol-ethoxylate ( Triton X-100) at 160 degrees C. The nanostructures have an average size of 1 mu m, and consist of interconnected nanosheets with thicknesses of about 40 nm. Based on time-dependent experimental results, we ascribe the oriented attachment mechanism to the growth of the SnS2 nanostructures. The nonionic surfactant Triton X-100 plays a key role in the formation of the flower-like morphology. Room temperature gas-sensing measurements show that the 3D SnS2 nanostructures could serve as sensor materials for the detection of NH3 molecules.

GAS PERMEABILITIES OF POLY(TRIMETHYLSILYLPROPYNE) MEMBRANES SURFACE MODIFIED WITH CF4 PLASMA

Surface fluorination of poly (trimethylsilylpropyne) (PTMSP) membranes by CF4 plasma was studied. The surface fluorination of the membranes was carried out in an atmosphere of CF4 in a capacitively coupled discharge apparatus with external electrodes. Dramatic increase in selectivity (P(O2)/P(N2)) was observed. The effect of fluorination conditions such as duration of treatment and discharge power on the permeabilities of the membranes was studied. X-ray photoelectron spectrometric data of modified PTMSP membranes showed a drastic alternation in the surface layer. The P(O2) and P(O2)/P(N2) of the membranes were observed to be dependent on the F/C atomic ratio. At F/C > 1, the P(O2/P(N2) value of the membranes could be more than four.

Formation of the V center on H-type zeolites with thermal treatment

The effect of thermal treatment on H-MCM-22 and H-ZSM-5 zeolites was investigated using the electron spin resonance technique. A six-line signal (denoted as A, g = 2.048, A = 22. 15 G) was detected on H-MCM-22 after He purging at high temperatures, whose intensities increased with the treating temperature. The same signal was also found on H-ZSM-5 zeolites with different crystal sizes. The paramagnetic center was identified as a V center, namely, a hole of an electron trapped on an oxygen atom bonding to a nearby aluminum atom. These signals appeared only on a dealuminated sample or a sample concomitantly with dealumination. The formation of the hole might involve an electron transferring from the lattice oxygen to a nonframework aluminum species, and the hyperfine splitting is caused by the interaction between the electron hole locating on the p orbit of oxygen and the framework aluminum bonding with the oxygen. The signal disappeared after the sample was exposed to air or oxygen at room temperature. However, the process was reversible. A new set of signals (denoted as B, g(1) = 2.008, g(2) = 2.003, g(3) = 1.9985) was observed after oxygen adsorption on the H-MCM-22 pretreated with He at 973 K or He purging at 973 K on the H-MCM-22 pretreated with oxygen at 813 K, which was attributed to the O- species.