45 resultados para Katsushika, Hokusai, 1760-1849.


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本发明提供化合物5,6-二羟基-2-(4-羟苯基)-4-酮-4H-1-苯并吡喃基-7-羟基-β-D-葡萄糖醛酸在制备抗艾滋病药物中和在制备逆转录酶抑制剂药物中的应用。

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本发明属于医药技术领域,公开了毛蕊异黄酮-7-氧-β-D-吡喃葡萄糖苷或其盐的新的医药用途。经药理试验证明,毛蕊异黄酮-7-氧-β-D-吡喃葡萄糖苷或其盐具有抗艾滋病毒作用,可治疗艾滋病,可在制备抗艾滋病药物中应用。

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以微囊藻毒素LR(MC-LR)和微囊藻毒素RR(MC-RR)为材料,主要通过调节杂质淋洗液和毒素洗脱液中甲醇、水和三氟乙酸(TFA)的配比来改变极性和PH值,对高效液相色谱(HPLC)法分析MC环境样品的方法进行了优化。结果表明,含0.1%TFA的40%~45%的甲醇水溶液可以取得较好的杂质淋洗效果;含0.1%TFA的70%的甲醇水溶液可以将固相萃取柱(SPE)上的MC完全洗下。因此,建议在分析杂质较多的环境样品时,使用含0.1%TFA的40%~45%的甲醇水溶液对杂质进行淋洗,然后用含0.1%TFA的7

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Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED

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In recent years, growth of GaN-based materials-related quantum dots has become a hot topic in semiconductor materials research. Considerable efforts have been devoted to growth of self-assembled quantum dots of GaN-based materials via MOCVD (Metal Organic Chemical Vapor Deposition) and there are a lot of relevant literatures. There is, however, few review papers for the topic. In this paper, different experimental methods for fabrication of quantum dots of GaN-based materials via MOCVD are critically reviewed and the experimental conditions and parameters, which may affect growth of the quantum dots, are analyzed, with an aim at providing some critical reference for the related future experiment research.

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为了满足用户对软件系统内部业务过程定义的定制需求,针对流行的J2EE平台,以工作流技术为基础设计了对遗留软件系统的改造平台JSPMP。JSPMP利用工作流引擎的过程定义与任务管理能力驱动系统业务流程执行,赋予软件系统在业务过程定义方面的动态可定制性。实践证明,开发者利用此方案能够迅速改造遗留系统,满足用户多样化的过程定制需求,极大地降低了改造、定制成本。

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垃圾的处置已成为全球性环境问题。与填埋法相比,焚烧、热解和气化等热处理法具有减容、减量和能源化利用等优点。如何控制垃圾焚烧过程中HCI、二恶英和未燃尽碳氢化合物等污染物的排放也引起越来越多国家的关注。采用先热解(或气化)再气相燃烧的方法以及对垃圾预处理保持垃圾组成相对稳定的RDF技术是减少二次污染的有效手段。喷动技术能够用相对较小气量流化较粗大颗粒,是进行RDF热解的较佳选择。但RDF具有密度小、流动性差等特点,考虑减少空气量和改善RDF流动性,在喷动床中水平引入辅助气,称为"喷流一移动床"。本论文首先在室温下对喷流一移动床的流体力学特性进行了研究。结果表明,水平辅助气的引入可以降低中心最小喷动气速,调控喷泉高度,提高环流区颗粒的流动速度,增大颗粒的循环流量。在此基础上,根据先部分燃烧部分热解后气相燃烧以及自热型的原则,设计了下部为喷流一移动床热解室上部为气相燃烧室的两段式RDF热解燃烧反应器,并利用实验室内制备的RDF对该反应器的运行特性进行了评价。论文对喷动空气量和辅助空气量对热解室温度分布、气体分布,二次空气对燃烧室温度分布以及CO和NOx的释放特性的影响进行了研究,然后对有机氯(PVC)和无机氯(NaCI)产生Hcl特性、Ca(OH)2对HCI的脱除特性及机理进行了研究。实验结果表明,RDF可以成功地进行自热型的先热解后气相燃烧,通过改变空气/燃料比可以控制热解室温度,水平辅助气的引入可以使热解室轴向温度分布更加均匀,热解室中可以得到O2含量低于2v%热解气体,热解气体在燃烧室中能完全燃烧。二次空气能够控制燃烧室温度以及Co和NOx的排放。PVC中氯能产生较大数量的HCI外,NaCl同样也可生成HCl;温度对PVC生成HCI量的影响很小,而对NaCI却起主要影响作用。漓温不利于钙化物与HCI反应的进仃,同时CaC12在高温时与石英砂(SiO2)、水蒸汽反应产生HCl,因此Ca(OH)2的脱氯效率会降低。

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根据历史文献分析,已知南海海名最早出现于周宣王(827BC--782BC在位)时的《江汉》诗中。秦汉之间214

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GaN基相关材料的量子点生长是半导体材料研究的一个热点,尤其是用MOCVD方法生长GaN基自组装量子点占了相当的比例,因此相关的文献较多,但综述性文章却不多见。鉴于此,本文综述了用MOCVD法制备GaN基量子点的不同实验方法,并对影响量子点牛长的实验条件和参数做了简要的分析。希望能够对相关的实验研究工作提供一些参考。