Silicon-on-insulating multi-layers for total-dose irradiation hardness

Silicon-on-insulating multi-layer (SOIM) materials were fabricated by co-implantation of oxygen and nitrogen ions with different energies and doses. The multilayer microstructure was investigated by cross-sectional transmission electron microscopy. P-channel metal-oxide-semiconductor (PMOS) transistors and metal-semiconductor-insulator-semiconductor (MSIS) capacitors were produced by these materials. After the irradiated total dose reaches 3 x 10(5) rad (Si), the threshold voltage of the SOIM-based PMOS transistor only shifts 0.07 V, while thin silicon-on-insulating buried-oxide SIMOX-based PMOS transistors have a shift of 1.2V, where SIMOX represents the separated by implanted oxygen. The difference of capacitance of the SOIM-based MSIS capacitors before and after irradiation is less than that of the thin-box SIMOX-based MSIS capacitor. The results suggest that the SOIM materials have a more remarkable irradiation tolerance of total dose effect, compared to the thin-buried-oxide SIMOX materials.

Electron irradiation induced defects in high temperature annealed InP single crystal

Electron irradiation induced defects in InP material which has been formed by high temperature annealing undoped InP in different atmosphere have been studied in this paper. In addition to Fe acceptor, there is no obvious defect peak in the sample before irradiation, whereas five defect peaks with activation energies of 0.23 eV, 0.26 eV, 0.31 eV, 0.37 eV and 0.46 eV have been detected after irradiation. InP annealed in P ambient has more thermally induced defects, and the defects induced by electron irradiation have characteristics of complex defect. After irradiation, carrier concentration and mobility of the samples have suffered obvious changes. Under the same condition, electron irradiation induced defects have fast recovery behavior in the FeP2 ambient annealed InP. The nature of defects, as well as their recovery mechanism and influence on material property have been discussed from the results.

SiO2/Ta interface reaction in magnetic multilayers and its influence on Ta buffer layers

Ta is often used as a buffer layer in magnetic multilayers. In this study, Ta/Ni81Fe19/Ta multilayers were deposited by magnetron sputtering on sing-crystal Si with a 300-nm-thick SiO2 film. The composition and chemical states at the interface region of SiO2/Ta were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an 'inter-mixing layer" at the SiO2/Ta interface due to a thermodynamically favorable reaction: 15 SiO2 + 37 Ta = 6 Ta2O5 + 5 Ta5Si3. Therefore, the Ta buffer layer thickness used to induce NiFe (111) texture increases.

聚丁二烯红外和拉曼光谱微结构分析

本工作对聚丁二烯(PBD)进行了光谱微结构分析，主要考察了三个问题。1、PBD分子链构象对PBD红外光谱的影响本工作对高顺式(c)PBD样品进行了室温和低温(25℃和-150℃)红外光谱测定，发现高顺式PBD在低温下整个光谱吸收峰大部分峰宽变窄，峰强增加，特别是738cm~(-1)峰，在低温下位移至748cm~(-1)，峰强增加一倍多。另外还观察到低温结晶态出现802和598cm~(-1)两个吸收峰，在以前文献中未曾有过报导，我们将它们归属为顺式结构结晶峰。通过计算分峰，原来738cm~(-1)峰分成两个位于742和727cm~(-1)的子峰，在低温下，两个子峰分别位移至748和735cm~(-1)，与室温时比较，两个子峰半宽都明显变小。748cm~(-1)子峰峰强也大大增加。结构分析表明，顺式结构特征振动CH=CH面外变角与分子链的构象有密切联系，而仅式(T)和1.2(v)结构却不存在这种情况，因而967cm~(-1)(T)和911cm~(-1)(v)两特征峰低温下变化都很小。本工作认为顺式结构738cm~(-1)峰这一变化是由于顺式结构不同分子链构象所造成的。低温和室温下分峰所得的左子峰对应于最稳定构象产生的吸收，右子峰则对应于相对不稳定构象产生的吸收。同时本工作肯定了米晋瑁等人提出的红外光谱定量分析方法在高顺式样品中的适用性。2、PBD分子链序列结构对红外光谱的影响由于在非高顺式样品中存在CCC、CCT、CCV、TCV、TCT、VCV等多种序列形式，通过不同组成的PBD红外光谱分析，发现在乙烯基含量中、高的样品中，原来738cm~(-1)峰已不再存在，峰值出现在733cm~(-1)附近，而且受1.2结构部分吸收的严重影响，顺式结构CH=CH面外变角吸收已不再是顺式结构的特征峰。通过对850至650cm~(-1)光谱区的光谱解析，本工作认为朱晋瑁等人的红外光谱定量分析方法在乙烯含量中、高的样品中已不再适用。3、PBD拉曼光谱的微结构分析本工作对PBD拉曼光谱1600-1700cm~(-1)区进行了光谱测定，选择了1666、1652和1639.5cm~(-1)吸收峰作为T、C和V构型的特征峰，借助于景遐斌老师的计算分峰方法，对PBD样品进行微结构分析，结果表明，各吸收带拟合良好，特征峰峰位稳定，分别在1666±1、1652±1.5和1639.5±1 cm~(-1)，半峰宽变化不大，峰与峰之间相互影响很小，也就是说，我们选用的特征峰是合理的。用分峰所得的相对面积，结合~1H-NMR测得的值，建立了拉曼光谱PBD定量分析方法。用这一方法对27个不同微结构组成的PBD样品进行分析，所得结果与~1HNMR（高顺式样品与~(13)C-NMR、IR）比较，绝大部分样品一致性很好，最大偏差小于2%。本工作认为，用1666、1652和1639.5cm~(-1)碳双键伸缩振动吸收峰作为T、C和V构型特征峰进行定量分析，在理论上是合理的，在实际上是可行的。而且本方法直接使用固体样品，不经任何溶解和处理，所有计算处理在微机上即可实现，操作和计算都很方便。

高温退火后非掺杂磷化铟材料的电子辐照缺陷

对不同气氛下高温退火非掺杂磷化铟(InP)材料的电子辐照缺陷进行了研究. 除铁受主外，磷化铁(FeP_2)气氛下退火后的InP中辐照前没有深能级缺陷，而辐照后样品的热激电流谱(TSC)中出现了5个较为明显的缺陷峰，对应的激活能分别为0.23 _eV, 0.26 _eV, 0.31 _eV, 0.37 _eV和0.46 _eV. 磷(P)气氛下退火后InP中的热生缺陷较多，电子辐照后形成的缺陷具有复合体特征. 与辐照前相比，辐照后样品的载流子浓度和迁移率产生显著变化. 在同样的条件下，经FeP_2 气氛下高温退火后的InP样品的辐照缺陷恢复速度较快. 根据这些现象分析了缺陷的属性、快速恢复机理和缺陷对材料电学性质的影响.

Observation of the resonant Raman behavior of individual single-walled carbon nanotubes

The different resonant Raman scattering process of single-walled carbon nanotubes (SWNTs) has been found between the Stokes and anti-Stokes sides of the radial breathing modes (RBMs), and this provides strong evidence that Raman spectra of some special diametric SWNTs are in resonance with their electronic transitions between the singularities in the one-dimensional electronic density of states in the valence and conduction bands, and other SWNTs axe beyond the resonant condition. Because of the coexistence of resonant and non-resonant Raman scattering processes for different diametric SWNTs, the relative intensity of each RBM does not reflect the proportion of a particular SWNT.

一氧化氮对人肝癌细胞SMMC-7721辐射敏感性的增强效应

目的:观察一氧化氮对肿瘤细胞SMMC-7721辐射敏感性的作用效果。方法:实验于2005-06/09在兰州大学生命科学学院和中科院近代物理研究辐射医学实验室进行。处于对数生长期的肝癌细胞SMMC-7721,在用X射线照射前4h,换入含有0.1mmol/L硝普钠(一氧化氮的前体)的培养液,与对照组(不加硝普钠)一起,在200cGy/min的剂量率下,分别照射0,1,2,4,6,8Gy,换为正常培养液培养。用集落形成法计算细胞的存活率,用吖啶橙/溴乙啶双染法检测细胞的死亡情况,用流式细胞仪检测细胞周期。结果:①存活曲线细胞存活率随照射剂量增加而减少,硝普钠组细胞的克隆形成率低于对照组(2Gy时,P<0.01)。②细胞死亡百分率(坏死细胞与凋亡细胞总数/总细胞数):与照射剂量呈正相关,硝普钠组高于对照组(P<0.05)。对照组从(9.95±3.53)%(0Gy)逐渐升至(58.74±3.46)%(6Gy),而硝普钠组则从(18.53±12.02)%(0Gy)迅速升至(61.57±9.53)%(2Gy)。③细胞周期检测结果:对照组细胞经过X射线照射后,出现了G2/M期阻滞[从0Gy时(12.50±5.76)%逐渐增加到8Gy(40.36±2.74)%],而硝普钠组细胞在低剂量时主要表现为G0/G1期阻滞[0Gy:(16.06±7.19)%;2Gy:(17.93±0.92)%],而G2/M期阻滞仅在高剂量时明显[8Gy时为(50.10±3.93)%,P<0.05]。结论:经硝普钠产生的一氧化氮,通过与X射线协同作用,减少了肝癌细胞SMMC-7721的细胞存活率,促进细胞死亡,阻止细胞被阻滞至G2/M期,是一种有效的辐射增敏剂。