Diffusion of ion implanted as in Si1-xGex epilayers

Diffusion of implanted As ion in relaxed Si1-xGex was studied as a function of Ge content over a wide range of Ge fractions (0-43%) and annealing temperature, and was compared to diffusion in Si. Experimental results showed that the As diffusion is enhanced with increasing annealing temperature for certain Ge content and strongly dependent on the higher Ge content and the faster As diffusion.

Photoluminescence studies of GaAs/AlGaAs single quantum well intermixed by Ga+ ion implantation

Ga(+)ion implantation followed by rapid thermal annealing (RTA) was used to enhance the interdiffusion in GaAs/AlGaAs single Quantum Wells(SQWs). The extent of intermixing was found to be dependent on the well depth, number of implanted ions and annealing time. A very fast interdiffusion process occurs at the initial annealing stage. After that, the enhanced diffusion coefficient goes back to the umimplanted value. We propose a two-step model to explain the diffusion process as a function of the annealing time : a fast diffusion process and a saturated diffusion process. The interdiffusion coefficient of the fast diffusion was found to be of well depth dependence and estimated to be in the range of 5.4x10(-16) similar to 1.5x10(-15)cm(2)s(-1). Copyright (C) 1996 Published by Elsevier Science Ltd

3μm GaInNAs/GasAs Quantum Well Resonant Cavity Enhanced Photodetector

A 1.3μm GaInNAs resonant cavity enhanced (RCE) photodetector (PD) has been grown by molecular beam epitaxy (MBE) monolithically on (100) GaAs substrate using a home-made ion-removed dc-plasma cell as nitrogen source. A transfer matrix method was used to optimize the device structure. The absorption region is composed of three GaInNAs quantum wells separated by GaAs layers. Devices were isolated by etching 130μm-diameter mesas and filling polyamide into grooves. The maximal quantum efficiency of the device is about 12% at 1.293μm. Full width at half maximum (FWHM) is 5.8nm and 3dB bandwidth is 304MHz. Dark current is 2 * 10~(-11) A at zero bias voltage. Further improvement of the performance of the RCE PD can be obtained by optimizing of the structure design and MBE growth conditions.

1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors

A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced (RCE) photodetector operating at 1.3 mum with the full-width at half-maximum of 5.5 nm was demonstrated. The GaInNAs RCE photodetector was grown by molecular-beam epitaxy using an ion-removed dc-plasma cell as nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature that is very beneficial for applications in long-wavelength absorption devices. For a 100-mum diameter RCE photodetector, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is -18 V. The measured 3-dB bandwidth is 308 MHz. The reasons resulting in the poor high speed property were analyzed. The tunable wavelength of 18 nm with the angle of incident light was observed.

Isolated sub-30-as pulse generation of an He+ ion by an intense few-cycle chirped laser and its high-order harmonic pulses

We present an efficient method to generate a ultrashort attosecond (as) pulse when a model He+ ion is exposed to the combination of an intense few-cycle chirped laser pulse and its 27th harmonics. By solving the time-dependent Schroumldinger equation, we found that high-order harmonic generation (HHG) from He+ ion is enhanced by seven orders of magnitude due to the presence of the harmonic pulse. After optimizing the chirp of the fundamental pulse, we show that the cut-off energy of the generated harmonics is extended effectively to I-p+25.5U(p). As a result, an isolated 26-as pulse with a bandwidth of 170.5 eV can be obtained directly from the supercontinuum around the cut-off of HHG. To better understand the physical origin of HHG enhancement and attosecond pulse emission, we perform semiclassical simulations and analyze the time-frequency characteristics of attosecond pulse.

The influence of fractionation on cell survival and premature differentiation after carbon ion irradiation

Carbon ion radiotherapy/Fractionated irradiation/R-BE/Premature terminal differentiation. To investigate the influence of fractionation on cell survival and radiation induced premature differentiation as markers for early and late effects after X-rays and carbon irradiation. Normal human fibroblasts NHDF, AG1522B and WI-38 were irradiated With 250 kV X-rays, or 266 MeV/u, 195 MeV/u and I I MeV/u carbon ions. Cytotoxicity was measured by a clonogenic survival assay or by determination of the differentiation pattern. Experiments with high-energy carbon ions show that fractionation induced repair effects are similar to photon irradiation. The RBE10 values for clonogenic survival are 1.3 and 1.6 for irradiation in one or two fractions for NHDF cells and around 1.2 for AG1522B cells regardless of the fractionation scheme. The RBE for a doubling of post mitotic fibroblasts (PMF) in the population is I for both single and two fractionated irradiation of NHDF cells. Using I I MeV/u carbon ions, no repair effect can be seen in WI-38 cells. The RBE10 for clonogenic survival is 3.2 for single irradiation and 4.9 for two fractionated irradiations. The RBE for a doubling of PMF is 3.1 and 5.0 for single and two fractionated irradiations, respectively. For both cell lines the effects of high-energy carbon ions representing the irradiation of the skin and the normal tissue in the entrance channel are similar to the effects of X-rays. The fractionation effects are maintained. For the lower energy, which is representative for the irradiation of the tumor region. RBE is enhanced for clonogenic survival as well as for premature terminal differentiation. Fractionation effects are not detectable. Consequently, the therapeutic ratio is significantly enhanced by fractionated irradiation with carbon ions.

Observation of pi(+)pi(-)pi(+)pi(-) photoproduction in ultraperipheral heavy-ion collisions at root s(NN)=200 GeV at the STAR detector

We present a measurement of pi(+)pi(-)pi(+)pi(-) photonuclear production in ultraperipheral Au-Au collisions at root s(NN) = 200 GeV from the STAR experiment. The pi(+)pi(-)pi(+)pi(-) final states are observed at low transverse momentum and are accompanied by mutual nuclear excitation of the beam particles. The strong enhancement of the production cross section at low transverse momentum is consistent with coherent photoproduction. The pi(+)pi(-)pi(+)pi(-) invariant mass spectrum of the coherent events exhibits a broad peak around 1540 +/- 40 MeV/c(2) with a width of 570 +/- 60 MeV/c(2), in agreement with the photoproduction data for the rho(0)(1700). We do not observe a corresponding peak in the pi(+)pi(-) final state and measure an upper limit for the ratio of the branching fractions of the rho(0)(1700) to pi(+)pi(-) and pi(+)pi(-)pi(+)pi(-) of 2.5% at 90% confidence level. The ratio of rho(0)(1700) and rho(0)(770) coherent production cross sections is measured to be 13.4 +/- 0.8(stat.) +/- 4.4(syst.)%.

Enhanced photoluminescence of Ar+ implanted sapphire before and after annealing

In this paper, we studied the changes in the photoluminescence spectra of the Ar+ ion implanted monocrystalline sapphire annealed at different atmospheres and different temperatures. Single crystals of sapphire (Al2O3) with the (1 0 (1) over bar 0) (m-samples) orientation were implanted at 623 K with 110 keV Ar+ ions to a fluence of 9.5 x 10(16) ions/cm(2). Photoluminescence measurement of the as-implanted sample shows a new emission band at 506 nm, which is attributed to the production of interstitial Al atoms. The intensity of emission band at 506 nm first increased then decreased with increase in annealing temperature. For the same annealing temperature, the intensity of PL peak at 506 nm of the sample annealed in air was higher than the sample annealed in vacuum. The experimental results show that the intensity of the PL peak at 506 nm of Ar-implanted sapphire can be enhanced by subsequent annealing with an enhancement of nearly 20 times. The influence of thermal annealing of the Ar-implanted samples on the new 506 nm emission band was discussed. (C) 2009 Elsevier B.V. All rights reserved.

A velocity map ion-imaging study on C2H5SH and C3H7SH photodissociation at 243 nm

Photodissociation dynamics Of C2H5SH, i-C-3-H7SH and n-C3H7SH at 243.1 nm were investigated using velocity map ion-imaging method. H-atom photolysis products were detected by a (2 + 1) resonance enhanced ionization scheme. Both the angular distribution and translational energy distribution of the H-atom elimination processes were determined from the ion images of the H-atom products. The experimental results indicate that the H-atom eliminations from these molecules are mainly direct and fast dissociation processes from a repulsive potential energy state. And a more statistical dissociation process that likely occurs oil the ground state via internal conversion has also been observed. Dissociation energies of the S-H bonds are also derived from the H-atom product translational energy distributions. (C) 2002 Elsevier Science B.V. All rights reserved.

Turn-on fluorescent cyanide sensor based on copper ion-modified CdTe quantum dots

A new fluorescent sensor for the sensitive and selective detection of cyanide (CN-) in aqueous media was developed herein. The sensing approach is based on CN--modulated quenching behavior of Cu2+ toward the photoluminescence (PL) of CdTe quantum dots (QDs). In the presence of CN-, the PL of QDs that have been quenched by Cu2+ was found to be efficiently recovered, which then allows the detection of CN- in a very simple approach. Experimental results showed that the pH of the buffer solution, concentration of copper ions, and size of CdTe QDs all influenced the response of the sensor to CN-. Under the optimal conditions, a good linear relationship between the PL intensity and the concentration of CN- can be obtained in the range of 3.0 x 10(-7) to 1.2 x 10(-5) M, with a detection limit as low as 1.5 x 10(-7) M. In addition, the present fluorescent sensor possesses remarkable selectivity for cyanide over other anions, and negligible influences were observed on the cyanide detection by the coexistence of other anions or biological species (such as albumin and typical blood constituents).

7-Amino actinomycin D bound to single-stranded hairpin DNA enhanced by loop sequence-dependent luminescent Eu3+ and Tb3+ binding

Lanthanide Eu3+ and Tb3+ ions have been widely used in luminescent resonance energy transfer (LRET) for bioassays to study metal binding microenvironments. We report here that Eu3+ or Tb3+ can increase the binding affinity of antitumor antibiotic drug agent, 7-amino actinomycin D (7AACTD), binding to 5'-GT/TG-5' or 5'-GA/AG-5' mismatched stem region of the single-stranded hairpin DNA. Further studies indicate that the effect of Eu3+ or Tb3+ on 7AACTD binding is related to DNA loop sequence. Our results will provide new insights into how metal ions can enhance antitumor agents binding to their targets.

Enhanced electrochemiluminescence sensor from tris(2,2 '-bipyridyl) ruthenium(II) incorporated into MCM-41 and an ionic liquid-based carbon paste electrode

The electrochemiluminescence (ECL) of tris(2,29-bipyridyl) ruthenium(II) [Ru(bpy)(3)(2+)] ion-exchanged in the sulfonic-functionalized MCM-41 silicas was developed with tripropylamine (TPrA) as a co-reactant in a carbon paste electrode (CPE) using a room temperature ionic liquid (IL) as a binder. The sulfonic-functionalized silicas MCM-41 were used for preparing an ECL sensor by the electrostatic interactions between Ru( bpy)(3)(2+) cations and sulfonic acid groups. We used the IL as a binder to construct the CPE (IL-CPE) to replace the traditional binder of the CPE (T-CPE)-silicone oil. The results indicated that the MCM-41-modified IL-CPE had more open structures to allow faster diffusion of Ru( bpy)(3)(2+) and that the ionic liquid also acted as a conducting bridge to connect TPrA with Ru( bpy)(3)(2+) sites immobilized in the electrode, resulting in a higher ECL intensity compared with the MCM-41-modified T-CPE. Herein, the detection limit for TPrA of the MCM-41-modified IL-CPE was 7.2 nM, which was two orders of magnitude lower than that observed at the T-CPE. When this new sensor was used in flow injection analysis (FIA), the MCM-41-modified IL-CPE ECL sensor also showed good reproducibility. Furthermore, the sensor could also be renewed easily by mechanical polishing whenever needed.

Enhanced electrochemical properties of nanocomposite polymer electrolyte based on copolymer with exfoliated clays

In this present work, a polymer electrolyte based on polymer/clay nanocomposite has been developed. Montmorillonite (MMT) clay was used as the filler. due to its special size in length and thickness, and its sandwich type structure. The obtained gel polymer electrolytes have high ionic conductivity up to 2.5 mS cm(-1) with high cationic transference number (about 0.64) at room temperature. The influences of the filler on the membrane morphology. the solvent uptake, the ionic conductivity, and the cation transport number were investigated, and thus the significant contribution from the exfoliated organophilic MMT was identified.

Structural changes of TiO2 gel using Eu3+ ion as the fluorescence probe

Because of the extremely sensitivity to the local environment of the D-5(0) --> F-7(2) transition of Eu3+ ion, the fluorescence of Eu3+ ions was Studied by introducing Eu3+ ions to TiO2 gel by the sol-gel method, from which the structural changes of TiO2 gel were characterized. The results showed that the intensity of D-5(0) --> F-7(2) transition increased with the increasement of heat treatment temperature, which indicated the evaporation of molecular water and the completeness of the condensation reaction. Because of the quenching of the fluorescence induced by the cluster of Eu3+ ions, the addition of Al3+ ions greatly enhanced the emission intensity of Eu3+ ion.