Monolithically integrated laser diode and electroabsorption modulator with dual-waveguide spot-size converter input and output

We have demonstrated a 1.60 mu m ridge-structure laser diode and electroabsorption modulator monolithically integrated with buried-ridge-structure dual-waveguide spot-size converters at the input and output ports for low-loss coupling to a cleaved single-mode optical fibre by means of selective area growth and asymmetric twin waveguide technologies. The devices emit in single transverse and quasi-single longitudinal modes with a side mode suppression ratio of 25.6 dB. These devices exhibit 3 dB modulation bandwidth of 15.0 GHz and modulator extinction ratios of 14.0 dB dc. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3 degrees x 10.6 degrees, respectively, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

Method for improving classification performance of neural network based on fuzzy input and network inversion

In order to effectively improve the classification performance of neural network, first architecture of fuzzy neural network with fuzzy input was proposed. Next a cost function of fuzzy outputs and non-fuzzy targets was defined. Then a learning algorithm from the cost function for adjusting weights was derived. And then the fuzzy neural network was inversed and fuzzified inversion algorithm was proposed. Finally, computer simulations on real-world pattern classification problems examine the effectives of the proposed approach. The experiment results show that the proposed approach has the merits of high learning efficiency, high classification accuracy and high generalization capability.

High-power electroabsorption modulator for radio over fibre system

An electroabsorption modulator using an intra-step quantum well (IQW) active region is fabricated for a radio over fibre system. The strain-compensated InGaAsP/InGaAsP IQW shows good material quality and improved modulation properties, high extinction ratio efficiency (10 dB V-1) and low capacitance (< 0.42 pF), with which high frequency (> 15 GHz) can be obtained. High-speed measurement under high-power excitation shows no power saturation up to an excitation power of 21 dBm. To our knowledge, the input optical power is the highest reported for a multi-quantum well EAM without a heat sink.

High-power electroabsorption modulator using intrastep quantum well

An electroabsorption modulator using the intrastep quantum well (IQW) active region is fabricated for optical network systems. The strain-compensated InGaAsP/InGaAsP IQW shows good material quality and improved modulation properties, high extinction ratio elliciency 10 dB/V and low capacitance (< 0.42 pF), with which an ultra high frequency (> 15 GHz) can be obtained. High-speed measurement under high-power excitation shows no power saturation up to excitation power of 21 dBm. To our knowledge, the input optical power is the highest reported for multi-quantum well EAMs without heat sinks.

Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots

The electronic band structures and optical gains of InAs1-xNx/GaAs pyramid quantum dots (QDs) are calculated using the ten-band k . p model and the valence force field method. The optical gains are calculated using the zero-dimensional optical gain formula with taking into consideration of both homogeneous and inhomogeneous broadenings due to the size fluctuation of quantum dots which follows a normal distribution. With the variation of QD sizes and nitrogen composition, it can be shown that the nitrogen composition and the strains can significantly affect the energy levels especially the conduction band which has repulsion interaction with nitrogen resonant state due to the band anticrossing interaction. It facilitates to achieve emission of longer wavelength (1.33 or 1.55 mu m) lasers for optical fiber communication system. For QD with higher nitrogen composition, it has longer emission wavelength and less detrimental effect of higher excited state transition, but nitrogen composition can affect the maximum gain depending on the factors of transition matrix element and the Fermi-Dirac distributions for electrons in the conduction bands and holes in the valence bands respectively. For larger QD, its maximum optical gain is greater at lower carrier density, but it is slowly surpassed by smaller QD as carrier concentration increases. Larger QD can reach its saturation gain faster, but this saturation gain is smaller than that of smaller QD. So the trade-off between longer wavelength, maximum optical, saturation gain, and differential gain must be considered to select the appropriate QD size according to the specific application requirement. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3143025]

A novel low-power input-independent MOS AC/DC charge pump

This paper presents a novel fully integrated MOS AC to DC charge pump with low power dissipation and stable output for RFID applications. To improve the input sensitivity, we replaced Schottky-diodes in conventional charge pumps with MOS diodes with zero threshold, which has less process defects and is thus more compatible with other circuits. The charge pump in a RFID transponder is implemented in a 0.35um CMOS technology with 0.24 sq mm die size. The analytical model of the charge pump and the simulation results are presented.

水文条件对紫色土坡面土壤侵蚀及养分流失的影响

采用人工模拟降雨试验,研究水文条件对紫色土坡面土壤侵蚀及氮和磷养分流失的影响。试验处理包括2个施肥水平(低肥和高肥水平),4个水文条件(自由下渗、土壤水分饱和、壤中流、壤中流+降雨)和一个降雨强度(60 mm/h,历时60 min)。结果表明:壤中流+降雨和土壤水分饱和条件下的土壤侵蚀量分别是自由下渗条件下的3.1和1.7倍,同自由下渗相比,壤中流、壤中流+降雨和土壤水分饱和条件下,地表径流中NO3-N、HPO4-P的浓度和流失量有显著增加;低肥水平条件下,自由下渗、土壤水分饱和、壤中流和壤中流+降雨地表径流中,NO3-N的浓度分别是0.88、58.90、698.41和87.80 mg/L,对应水文条件下地表径流中,HPO4-P的浓度分别是0.252、0.322、0.811和0.383 mg/L,高肥水平条件下,径流中的NO3-N和HPO4-P的浓度也有相同的趋势;土壤水分饱和条件下,地表径流中NO3-N和HPO4-P的流失量分别是自由下渗条件下的27~39和1.3倍,壤中流+降雨条件下,地表径流中NO3-N和HPO4-P的流失量分别是自由下渗条件下的100~114和1.5~1.7倍,同时,壤中流+降雨和土壤...

High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors

Ge-on-silicon-on-insulator p-i-n photodetectors were fabricated using an ultralow-temperature Ge buffer by ultrahigh-vacuum chemical vapor deposition. For a detector of 70-mu m diameter, the 1-dB small-signal compression power was about 110.5 mW. The 3-dB bandwidth at 3-V reverse bias was 13.4 GHz.

Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy

Ge composition dependence on the Ge cell temperature has been studied during the growth of Si1-xGex by disilane and solid Ge molecular beam epitaxy at a substrate temperature of 500 degrees C. It is found that the composition x increases and then saturates when the Ge cell temperature increases, which is different from the composition-dependent behavior in growth at high temperature as well as in growth by molecular beam epitaxy using disilane and germane. The enhanced hydrogen desorption from a Ge site alone cannot account for this abnormal composition-variation behavior. We attribute this behavior to the increase of rate constant of H desorption on a Si site when the Ge cell temperature increases.

An Efficient MMI SOI Splitter with Multimode Input/Output Waveguides

A 1×8 multimode interference power splitter with multimode input/output waveguides in SOI material is designed by the beam propagation method and fabricated by the inductive coupled plasma etching technology for use in fiber optics communication systems.The fabricated device exhibits low loss and good coupling uniformity.The excess loss is lower than 0.8dB,and the uniformity is 0.45dB at the wavelength of 1550nm.Moreover,the polarization dependent loss is lower than 0.7dB at 1550nm.The device size is only 2mm×10mm.

Late Quaternary aeolian dust input variability on the Chinese Loess Plateau: inferences from unmixing of loess grain-size records

IEECAS SKLLQG

Triton-He-3 relative and differential flows as probes of the nuclear symmetry energy at supra-saturation densities

Using a transport model coupled with a phase-space coalescence afterburner, we study the triton-He-3 (t-He-3) ratio with both relative and differential transverse flows in semicentral Sn-132 + Sn-124 reactions at a beam energy of 400 MeV/nucleon. The neutron-proton ratios with relative and differential flows are also discussed as a reference. We find that similar to the neutron-proton pairs, the t-He-3 pairs also carry interesting information regarding the density dependence of the nuclear symmetry energy. Moreover, the nuclear symmetry energy affects more strongly the t-He-3 relative and differential flows than the pi(-)/pi(+) ratio in the same reaction. The t-He-3 relative flow can be used as a particularly powerful probe of the high-density behavior of the nuclear symmetry energy.

Can the nuclear symmetry potential at supra-saturation densities be negative?

In the framework of an isospin-dependent Boltzmann-Uehling-Uhlenbeck (IBUU) transport model, for the central Au-197 + Au-197 reaction at an incident beam energy of 400 MeV/nucleon, the effect of nuclear symmetry potential at supra-saturation densities on the preequilibrium clusters emission is studied. It is found that for the positive symmetry potential at supra-saturation densities the neutron-to-proton ratio of lighter clusters with mass number A less than or similar to 3 [(n/p)(A less than or similar to 3)] is larger than that of the heavier clusters with mass number A > 3 [(n/p)(A>3)], whereas for the negative symmetry potential at supra-saturation densities the (n/p)(A less than or similar to 3) is smaller than the (n/p)(A>3). This may be considered as a probe of the negative symmetry potential at supra-saturation densities.

PROBING THE SYMMETRY ENERGY AT SUPRA-SATURATION DENSITIES FROM PION EMISSION IN HEAVY-ION COLLISIONS

Within the framework of the improved isospin dependent quantum molecular dynamics (ImIQMD) model, the emission of pion in heavy-ion collisions in the region 1 A GeV as a probe of nuclear symmetry energy at supra-saturation densities is investigated systematically, in which the pion is considered to be mainly produced by the decay of resonances Delta(1232) and N*(1440). The pi(-)/pi(+) yields are calculated for selected Skyrme parameters SkP, SLy6, Ska and SIII, and also for the cases of different stiffness of symmetry energy with the parameter SLy6. Preliminary results compared with the measured data by the FOPI collaboration favor a hard symmetry energy of the potential term proportional to (rho/rho(0))(gamma s) with gamma(s) = 2.