39 resultados para HF Comercio: Contabilidad, Mercadeo


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HF etching followed by relatively low temperature (almost-equal-to 600-degrees-C) pretreatment is shown to provide a suitable substrate for the heteroepitaxial growth of GaAs on Si(100) by CBE using TEGa and AsH3 as sources. Rutherford backscattering (RBS), photoluminescence (PL), transmission electron microscopy (TEM), and Raman measurements show the low-defect nature of the GaAs epilayer.

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利用动态掩膜湿法腐蚀技术,研究了HCl/HF/CrO3溶液对与InP衬底晶格匹配的InxGa1-xAs1-yPy(y=0,0.2,0.4,0.6)材料的腐蚀特性.对于HCl(36wt%)/HF(40wt%)/CrO3(10wt%)的体积比为x∶0.5∶1的溶液,随着x由0增加到1.25,相应的腐蚀液对In0.53Ga0.47As/In0.72Ga0 28As06P0.4的选择性由42.4降到1.4;通过调节腐蚀液的选择性,在In072Ga0.28As06P0.4外延层上制备出了倾角从1.35°到35.9°的各种楔形结构;当x为0.025和1.25时,相应的In0.72Ga0.28As0.6P0.4腐蚀表面的均方根粗糙度分别为1.1nm和1.6nm.还研究了溶液的组分与InxGa1-xAs1-yPy(y=0,0.2,0.4)的腐蚀速率间的关系,并对腐蚀机理进行了分析.

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利用动态掩膜腐蚀技术,研究了HF/CrO_3腐蚀液对各种不同组分的Al_xGa_(1-x)As (x = 0.3, 0.5, 0.65)的腐蚀速率及腐蚀表面形貌。随着HF(48wt%)/CrO_3(33wt%)的体积比由0.01变化到0.138,相应的腐蚀液对Al_(0.8)Ga_(0.2)As/Al_(0.3)Ga_(0.7)As的选择性由179降到8.6;通过调节腐蚀液的选择性,在Al_(0.3)Ga_(0.7)As外延层上制备出了倾角从0.32°到6.61°的各种斜面。当HF(48wt%)/CrO_3(33wt%)的体积比为0.028时,Al组分分别为0.3、0.5和0.65时,相应的腐蚀表面的均方根粗糙度为1.8、9.1和19.3nm。另外,还分析了腐蚀机理与腐蚀表面形貌之间的关系。

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利用14MeV中子轰击天然钨靶,通过180,182,183,184,186W(n,2pxn)反应,产生铪的放射性同位素,以γ(X)谱学方法鉴别出铪,观测到了能量为75.2keV和88.7keV的2条新γ射线,测定其半衰期为(3.6±0.6)min。

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用放射化学方法研究了6.3、8.5、11.8、14.7、18.4、24.6、40 MeV/nucleon ~(40)Ar + ~(nat)W、10.5 MeV/nucleon ~(84)Kr + ~(nat)W、80 MeV/nucleon ~(16)O + ~(nat)W、135 MeV/nucleon ~(12)C + ~(nat)W反应中的Hf的生成,得到了Hf同位素的激发函数、反冲性质和同位素分布。研究结果指出利用HIRFL能量的重离子和丰中子靶核作用,能以一定的截面生成A > 170区丰中子新核素。重炮弹更有利于丰中子新核素的生成。使用厚靶,可以明显地提高丰中子新核素的产额。过高的入射能量对丰中子新核素的生成无明显贡献,相反却极大地增加了缺中子同位素产额,这对丰中子新核素的分离和鉴别是非常不利的

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Studies of the extraction kinetics of cerium(IV) into n-heptane solutions of di(2-ethylhexyl)-2-ethylhexyl phosphonate DEHEHP from HNO3-HF solutions have been carried out using a constant interfacial cell with laminar flow. The experimental hydrodynamic conditions were chosen so that the contribution of diffusion to the measured rate of reaction was minimized. The data were analyzed in terms of pseudo-first order constants. The effects of the stirring rate, specific interfacial area, and temperature on the extraction rate showed that the most probable reaction zone is in the aqueous homogeneous phase. The results were compared with those of the system without HF. It was concluded that the presence of HF decreases the extraction rate of cerium. The addition of HF increases the activation energy for the forward reaction from 21.2 to 55.3 kJ/mol and for the reverse process from 57.9 to 79.0 kJ/mol. According to the experimental data correlated as a function of the concentration of the relevant species involved in the extraction reaction, the corresponding rate equation was deduced as follows:-d[Ce]/dt = k[Ce] center dot B-0.62 center dot HF-0.58 center dot [NO3-](0.57)

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Studies of the extraction kinetics of cerium(IV) from H2SO4-HF solutions with Cyanex 923 in n-heptane have been carried out using a constant interfacial area cell with laminar flow. The experimental hydrodynamic conditions were chosen so that the contribution of diffusion to the measured rate of reaction was minimized. The data were analyzed in terms of pseudo-first order constants. The results were compared with those of the system without HF. It was concluded that the addition of HF reduces the activation energy for the forward rate from 46.2 to 36.5 U mol(-1) while it has an opposite effect on the activation energy for the reverse process(the activation energy increased from 23.3 to 90.8 U mol(-1)). Thus, HF can accelerate the rate of cerium(IV) extraction. At the same time, the extraction rate is controlled by a mixed chemical reaction-diffusion rather than by a chemical reaction alone. A rate equation has also been obtained.

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探讨了茂金属催化剂 Cpt2 MCl2 ( Cpt=t Bu C5 H4,M=Ti,Zr,Hf)的合成以及用于聚合丁烯 -1的研究 ,研究了几种不同的茂金属催化剂和不同聚合条件下的催化行为 ,并通过 IR、1 H NMR、EI-MS、DSC、粘度法测分子量和正庚烷抽提等测试手段对催化剂和聚合物进行了表征 .结果表明 ,叔丁基取代的茂金属催化剂催化丁烯 -1聚合具有较高的催化活性 ,叔丁基的引入提高了聚合物的等规度和分子量

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以H_3PO_4、水铝石和硅溶胶为原料,四甲基氢氧化铵(TMAOH)为模板剂,在HF参与下水热晶化出含磷P型沸石和SAPO-20分子筛,得到2种分子筛的生成相区,并用~(31)P和~(29)Si MASNMR方法研究了杂原子的取代方式。