Numerical analysis of spatial evolution of the small signal gain in a chemical oxygen-iodine laser operating without primary buffer gas

A chemical oxygen iodine laser (COIL) that operates without primary buffer gas has become a new way of facilitating the compact integration of laser systems. To clarify the properties of spatial gain distribution, three-dimensional (3-D) computational fluid dynamics (CFD) technology was used to study the mixing and reactive flow in a COIL nozzle with an interleaving jet configuration in the supersonic section. The results show that the molecular iodine fraction in the secondary flow has a notable effect on the spatial distribution of the small signal gain. The rich iodine condition produces some negative gain regions along the jet trajectory, while the lean iodine condition slows down the development of the gain in the streamwise direction. It is also found that the new configuration of an interleaving jet helps form a reasonable gain field under appropriate operation conditions. (c) 2007 Elsevier Ltd. All rights reserved.

Distribution of Temperature in GlidArc Discharge Plasma

The GlidArc discharge is one of the main generation methods of non-equilibrium plasma near atmospheric pressures. In general, Gliding Arc discharge is driven by gas flow [1] in axial direction or by magnetic field in circumferential direction. [2] In this paper, a GlidArc discharge driven by rotating-gas-flow in circumferential direction is presented. The principle of the plasma generator is analyzed. The distribution of the temperature in axial direction is measured by a digital thermometer for three different gases. The experimental set-up of the GlidArc plasma is shown in Fig.1. It consists of a center electrode, an outside electrode, a power supply and a gas supply. The shortest distance between the electrodes is 2-3 mm. When a power supply with 10000 volts is attached to the electrodes, the arc will be ignited at the shortest distance. The small plasma column is rotated by the rotating gas flow in circumferential direction and then the rotating arc is driven towards the exit of the setup by the gas flow.

Simulation of Natural Gas Production in Hydrate Reservoirs

This paper simulates a one-dimensional physical model of natural gas production from hydrate dissociation in a reservoir by depressurization. According to the principles of solid hydrate decomposition in stratum and flow of natural gas in porous medium, the pressure governing equations for both gas zone and hydrate zone are set up based on the physical production model. Using the approximation reported by N. N. Verigin et al. (1980), the nonlinear governing equations are simplified and the self-similar solutions are obtained. Through calculation, for different reservoir parameters, the distribution characters of pressure are analyzed. The decline trend of natural gas production rate with time is also studied. The simulation results show that production of natural gas from a hydrate reservoir is very sensitive to several reservoir parameters, such as wellbore pressure and stratum porosity and permeability.

Information preservation (IP) method in simulation of internal rarefied gas flows in MEMS

This paper reviews firstly methods for treating low speed rarefied gas flows: the linearised Boltzmann equation, the Lattice Boltzmann method (LBM), the Navier-Stokes equation plus slip boundary conditions and the DSMC method, and discusses the difficulties in simulating low speed transitional MEMS flows, especially the internal flows. In particular, the present version of the LBM is shown unfeasible for simulation of MEMS flow in transitional regime. The information preservation (IP) method overcomes the difficulty of the statistical simulation caused by the small information to noise ratio for low speed flows by preserving the average information of the enormous number of molecules a simulated molecule represents. A kind of validation of the method is given in this paper. The specificities of the internal flows in MEMS, i.e. the low speed and the large length to width ratio, result in the problem of elliptic nature of the necessity to regulate the inlet and outlet boundary conditions that influence each other. Through the example of the IP calculation of the microchannel (thousands m ? long) flow it is shown that the adoption of the conservative scheme of the mass conservation equation and the super relaxation method resolves this problem successfully. With employment of the same measures the IP method solves the thin film air bearing problem in transitional regime for authentic hard disc write/read head length ( 1000 L m ? = ) and provides pressure distribution in full agreement with the generalized Reynolds equation, while before this the DSMC check of the validity of the Reynolds equation was done only for short ( 5 L m ? = ) drive head. The author suggests degenerate the Reynolds equation to solve the microchannel flow problem in transitional regime, thus provides a means with merit of strict kinetic theory for testing various methods intending to treat the internal MEMS flows.

Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals

The physical vapor transport (PVT) method is being widely used to grow large-size single SiC crystals. The growth process is associated with heat and mass transport in the growth chamber, chemical reactions among multiple species as well as phase change at the crystal/gas interface. The current paper aims at studying and verifying the transport mechanism and growth kinetics model by demonstrating the flow field and species concentration distribution in the growth system. We have developed a coupled model, which takes into account the mass transport and growth kinetics. Numerical simulation is carried out by employing an in-house developed software based on finite volume method. The results calculated are in good agreement with the experimental observation.

IP Simulation of Micro Gas Flows under 3-D Head Sliders

Gas film lubrication of a three-dimensional flat read-write head slider is calculated using the information preservation (IP) method and the direct simulation Monte Carlo (DSMC) method, respectively. The pressure distributions on the head slider surface at different velocities and flying heights obtained by the two methods are in excellent agreement. IP method is also employed to deal with head slider with three-dimensional complex configuration. The pressure distribution on the head slider surface and the net lifting force obtained by the IP method also agree well with those of DSMC method. Much less (of the order about 10(2) less) computational time (the sum of the time used to reach a steady stage and the time used in sampling process) is needed by the IP method than the DSMC method and such an advantage is more remarkable as the gas velocity decreases.

Rarefied gas dynamics: fundamentals, simulations and micro flows

Exact solutions to collisionless external gas flows

This paper presents exact density, velocity and temperature solutions for two problems of collisionless gas flows around a flat plate or a spherical object. At any point off the object, the local velocity distribution function consists of two pieces of Maxwellian distributions: one for the free stream which is characterized by free stream density, temperature and average velocity, n0, T0, U0; and the other is for the wall and it is characterized by density at wall and wall temperature, nw,Tw. Directly integrating the distribution functions leads to complex but exact flowfield solutions. To validate these solutions, we perform numerical simulations with the direct simulation Monte Carlo (DSMC) method. In general, the analytical and numerical results are virtually identical. The evaluation of these analytical solutions only requires less than one minute while the DSMC simulations require several days.

Filamentation control in the temperature gradient argon gas

A novel technique of controlling the evolution of the filamentation was experimentally demonstrated in an argon gas-filled tube. The entrance of the filament was heated by a furnace and the other end was cooled with air, which resulted in the temperature gradient distribution along the tube. The experimental results show that multiple filaments are merged into a single filament and then no filament by only increasing the temperature at the entrance of the filament. Also, the filament can appear and disappear after increasing the local temperature and input pulse energy in turn. This technique offers another degree of freedom to control the filamentation and opens a new way for multi-mJ level monocycle pulse generation through filamentation in the noble gas.

Anomalous photogalvanic effect of circularly polarized light incident on the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures at room temperature

Under normal incidence of circularly polarized light at room temperature, a charge current with swirly distribution has been observed in the two-dimensional electron gas in Al0.25Ga0.75N/GaN heterostructures. We believe that this anomalous charge current is produced by a radial spin current via the reciprocal spin Hall effect. It suggests a new way to research the reciprocal spin Hall effect and spin current on the macroscopic scale and at room temperature.

Photoluminescence investigation of two-dimensional electron gas in an undoped AlxGa1-xN/GaN heterostructure

Low-temperature photoluminescence measurement is performed on an undoped AlxGa1-xN/GaN heterostructure. Temperature-dependent Hall mobility confirms the formation of two-dimensional electron gas (2DEG) near the heterointerface. A weak photoluminescence (PL) peak with the energy of similar to 79meV lower than the free exciton (FE) emission of bulk GaN is related to the radiative recombination between electrons confined in the triangular well and the holes near the flat-band region of GaN. Its identification is supported by the solution of coupled one-dimensional Poisson and Schrodinger equations. When the temperature increases, the red shift of the 2DEG related emission peak is slower than that of the FE peak. The enhanced screening effect coming from the increasing 2DEG concentration and the varying electron distribution at two lowest subbands as a function of temperature account for such behaviour.

In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy

N-p-n Si/SiGe/Si heterostructures have been grown by a disilane (Si2H6) gas and Ge solid sources molecular beam epitaxy system using phosphine (PH3) and diborane (B2H6) as n- and p-type in situ doping sources, respectively. Adopting an in situ doping control technology, the influence of background B dopant on the growth of n-Si emitter layer was reduced, and an abrupt B dopant distribution from SiGe base to Si emitter layer was obtained. Besides, higher n-type doping in the surface region of emitter to reduce the emitter resist can be realized, and it did not result in the drop of growth rate of Si emitter layer in this technology. (C) 2004 Elsevier B.V. All rights reserved.

Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. Numeric simulation is a potent tool for solving engineering problems. In this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. A flowing stream of argon gas is described by numeric simulation for the first time. Therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (C) 2002 Elsevier Science B.V. All rights reserved.

High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)

Uniform and high phosphorous doping has been demonstrated during Si growth by GSMBE using disilane and phosphine. The p-n diodes, which consist of a n-Si layer and a p-SiGe layer grown on Si substrate, show a normal I-V characteristic. A roughening transition during P-doped Si growth is found. Ex situ SEM results show that thinner film is specular. When the film becomes thicker, there are small pits of different sizes randomly distributed on the flat surface. The average pit size increases, the pit density decreases, and the size distribution is narrower for even thicker film. No extended defects are found at the substrate interface or in the epilayer. Possible causes for the morphological evolution are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

Thermal performance of a micro-combustor for micro-gas turbine system

Premixed combustion of hydrogen gas and air was performed in a stainless steel based micro-annular combustor for a micro-gas turbine system. Micro-scale combustion has proved to be stable in the micro-combustor with a gap of 2 mm. The operating range of the micro-combustor was measured, and the maximum excess air ratio is up to 4.5. The distribution of the outer wall temperature and the temperature of exhaust gas of the micro-conbustor with excess air ratio were obtained, and the wall temperature of the micro-combustor reaches its maximum value at the excess air ratio of 0.9 instead of 1 (stoichiometric ratio). The heat loss of the micro-combustor to the environment was calculated and even exceeds 70% of the total thermal power computed from the consumed hydrogen mass flow rate. Moreover, radiant hunt transfer covers a large fraction of the total heat loss. Measures used to reduce the heat loss were proposed to improve the thermal performance of the micro-combustor. The optimal operating status of the micro-combustor and micro-gas turbine is analyzed and proposed by analyzing the relationship of the temperature of the exhaust gas of the micro-combustor with thermal power and excess air ratio. The investigation of the thermal performance of the micro-combustor is helpful to design an improved microcombustor.