Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si delta-doped on the barriers

Magneto-transport measurements have been carried out on a Si delta-doped In0.65Ga0.35As/In0.52Al0.48As metamorphic high-electron-mobility transistor with InP substrate in a temperature range between 1.5 and 60 K under magnetic field up to 13 T. We studied the Shubnikov-de Haas (SdH) effect and the Hall effect for the In0.65Ga0.35As/In0.52Al0.48As single quantum well occupied by two subbands and obtained the electron concentration and energy levels respectively. We solve the Schrodinger-Kohn-Sham equation in conjunction with the Poisson equation self-consistently and obtain the configuration of conduction band, the distribution of carriers concentration, the energy level of every subband and the Fermi energy. The calculational results are well consistent with the results of experiments. Both experimental and calculational results indicate that almost all of the delta-doped electrons transfer into the quantum well in the temperature range between 1.5 and 60 K.

Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice

We have observed the transition from static to dynamic electric field domain formation induced by a transverse magnetic field and the sample temperature in a doped GaAs/AlAs superlattice. The observations can be very well explained by a general analysis of instabilities and oscillations of the sequential tunnelling current in superlattices based solely on the magnitude of the negative differential resistance region in the tunnelling characteristic of a single barrier. Both increasing magnetic field and sample temperature change the negative differential resistance and cause the transition between static and dynamic electric field domain formation. (C) 2000 Elsevier Science B.V. All rights reserved.

Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice

We have observed the transition from static to dynamic electric field domain formation induced by a transverse magnetic field and the sample temperature in a doped GaAs/AlAs superlattice. The observations can be very well explained by a general analysis of instabilities and oscillations of the sequential tunnelling current in superlattices based solely on the magnitude of the negative differential resistance region in the tunnelling characteristic of a single barrier. Both increasing magnetic field and sample temperature change the negative differential resistance and cause the transition between static and dynamic electric field domain formation. (C) 2000 Elsevier Science B.V. All rights reserved.

An investigation of low-field magnetoresistance in the double perovskites Sr2Fe1-xZnxMoO6, x=0, 0.05, 0.15 and 0.25

The electrical, magnetic and transport properties of Zn doped polycrystalline samples of Sr2Fe1-xZnxMoO6 ( x = 0, 0.05, 0.15 and 0.25) with the double perovskite structure have been investigated. The subtle replacement of Fe3+ ions by Zn2+ ions facilitates the formation of a more ordered structure, while further substitution leads to disordered structure because of the presence of a striped phase. Analysis of the x-ray powder diffraction patterns based on Rietveld analysis indicates that the replacement of Fe3+ by Zn2+ ions favours the formation of Mo6+ ions. The spin-glass behaviour can be explained on the basis of the competition between the antiferromagnetic superexchange and the ferromagnetic double-exchange interaction. The low-field magnetoresistance was moderately enhanced at x = 0.05, and its origin was found to be the competition between the decrease of the concentration of the itinerant electrons and the weaker antiferromagnetic superexchange in the antiphase boundaries. An almost linear negative magnetoresistance in moderate field has been observed for x = 0.25. A possible double-exchange mechanism is proposed for elucidating the observations; it also suggests a coexistence of (Fe3+, Mo5+) and (Zn2+, Mo6+) valence pairs.

Infrared heater arrays for warming ecosystem field plots

There is a need for methodology to warm open-field plots in order to study the likely effects of global warming on ecosystems in the future. Herein, we describe the development of arrays of more powerful and efficient infrared heaters with ceramic heating elements. By tilting the heaters at 45 degrees from horizontal and combining six of them in a hexagonal array, good uniformity of warming was achieved across 3-m-diameter plots. Moreover, there do not appear to be obstacles (other than financial) to scaling to larger plots. The efficiency [eta(h) (%); thermal radiation out per electrical energy in] of these heaters was higher than that of the heaters used in most previous infrared heater experiments and can be described by: eta(h) = 10 + 25exp(-0.17 u), where u is wind speed at 2 m height (m s(-1)). Graphs are presented to estimate operating costs from degrees of warming, two types of plant canopy, and site windiness. Four such arrays were deployed over plots of grass at Haibei, Qinghai, China and another at Cheyenne, Wyoming, USA, along with corresponding reference plots with dummy heaters. Proportional integral derivative systems with infrared thermometers to sense canopy temperatures of the heated and reference plots were used to control the heater outputs. Over month-long periods at both sites, about 75% of canopy temperature observations were within 0.5 degrees C of the set-point temperature differences between heated and reference plots. Electrical power consumption per 3-m-diameter plot averaged 58 and 80 kW h day(-1) for Haibei and Cheyenne, respectively. However, the desired temperature differences were set lower at Haibei (1.2 degrees C daytime, 1.7 degrees C night) than Cheyenne (1.5 degrees C daytime, 3.0 degrees C night), and Cheyenne is a windier site. Thus, we conclude that these hexagonal arrays of ceramic infrared heaters can be a successful temperature free-air-controlled enhancement (T-FACE) system for warming ecosystem field plots.