29 resultados para Ferroelectric


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A reversible electrochromic effect accompanying domain-inversion during the electrical poling process in LiNbO3: Ru: Fe crystals at room temperature has been observed. In electrode area, both electrochromism and domain-inversion occur alternately, and electrochromism is also reversible during back-switch poling, which is experimentally verified and whose mechanism is briefly explained using a microstructure ferroelectric model. In addition, because of the enhancing elcctrochromic effect, different from the undoped LiNbO3 crystals, the coercive riled (21.0 kV/mm or so) measured in LiNbO3: Ru: Fe is lower than its breakdown field, thus providing a possible new technique for realizing the domain-inversion by constant electric field rather than a pulsed one.

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We quantitatively study the domain inversion in a RuO2:LiNbO3 crystal wafer by the digital holographic interferometry. The crystal wafer is placed into one arm of a Mach-Zehnder-type interferometer to record a series of holograms. Making use of the angular spectrum backward propagation algorithm, we reconstruct the optical wave field in the crystal plane. The extracted phase difference from the reconstructed optical wave field is a well linear function of the applied external voltage. We deduce that the linear electro-optic coefficient of the detected RuO2:LiNbO3 crystal sample is 9.1x10(-12) m/V. An unexpected phase contrast at the antiparallel domain wall is observed and the influence of the applied external voltage on it is studied in detail. Also the built-in internal field is quantitatively measured as 0.72 kV/mm. (c) 2006 American Institute of Physics.

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The quantitative phase-mapping of the domain nucleation in MgO:LiNbO3 crystals is presented by using the digital holographic interferometry. An unexpected peak phase at the beginning of the domain nucleation is observed and it is lowered as the spreading of the domain nucleus. The existence of the nucleus changes the moving speed of the domain wall by pinning it for 3s. Such in-situ quantitative analysis of the domain nucleation process is a key to optimizing domain structure fabrication.

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The phase mapping of domain kinetics under the uniform steady-state electric field is achieved and investigated in the LiNbO3 crystals by digital holographic interferometry. We obtained the sequences of reconstructed three-dimensional and two-dimensional wave-field phase distributions during the electric poling in the congruent and near stoichiometric LiNbO3 crystals. The phase mapping of individual domain nucleation and growth in the two crystals are obtained. It is found that both longitudinal and lateral domain growths are not linear during the electric poling. The phase mapping of domain wall motions in the two crystals is also obtained. Both the phase relaxation and the pinning-depinning mechanism are observed during the domain wall motion. The residual phase distribution is observed after the high-speed domain wall motion. The corresponding analyses and discussions are proposed to explain the phenomena.

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(Na1-xKx)(0.5)Bi0.5TiO3 (NKBT) (x = 0.1, 0.2, and 0.3) thin films with good surface morphology and rhombohedral perovskite structure were fabricated on quartz substrates by a sol-gel process. The fundamental optical constants (the band gaps, linear refractive indices and absorption coefficients) of the films were obtained through optical transmittance measurements. The nonlinear optical properties were investigated by Z-scan technique performed at 532 nm with a picosecond laser. A two-photon absorption effect closely related with potassium-doping content was found in thin films, and the nonlinear refractive index n(2) increases evidently with potassium-doping. The real part of the third-order nonlinear susceptibility chi((3)) is much larger than its imaginary part, indicating that the third-order optical nonlinear response of the NKBT films is dominated by the optical nonlinear refractive behavior. These results show that NKBT thin films have potential applications in nonlinear optics. (C) 2007 Elsevier B.V. All rights reserved.

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Undoped and Al-, Ga-, and In-doped Bi4Ti3O12 thin films were prepared on fused quartz substrates by chemical solution deposition. Their microstructures and optical properties were investigated by x-ray diffraction and UV-visible-NIR spectrophotometer, respectively. The optical band-gap energies, Urbach energies, and linear refractive indices of all the films are derived from the transmittance spectrum. Following the single oscillator model, the dispersion parameters such as the average oscillator energy (E-0) and dispersion energy (E-d) are achieved. The energy band gap and refractive indices are found to decrease with introducing the dopants of Al, Ga, and In, which is useful for the band-gap engineering and optical waveguide devices. The refractive index dispersion parameter (E-0/S-0) increases and the chemical bonding quantity (beta) decreases in all the films compared with those of bulk. It is supposed to be caused by the nanosize grains in films. (c) 2009 American Institute of Physics. [DOI 10.1063/1.3138813]

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The influence of gamma-radiation dose rate on the electrical properties of lead zirconate titanate capacitors was investigated. More severe degradations in dielectric constant, coercive field, remanent polarization and capacitance-voltage (C-V) curves occurred with increasing radiation dose at lower dose rates. The electrical properties exhibited distinct radiation dose rate dependence and the worst-case degradation occurred at the lowest dose rate. The radiation-induced degradation of parameters such as the coercive field drift and distortion of the C-V curve can be recovered partly through post-irradiation annealing.

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X-ray photoelectron spectroscopy has been used to measure the valence band offset of the ZnO/BaTiO3 heterojunction grown by metal-organic chemical vapor deposition. The valence band offset (VBO) is determined to be 0.48 +/- 0.09 eV, and the conduction band offset (CBO) is deduced to be about 0.75 eV using the band gap of 3.1 eV for bulk BaTiO3. It indicates that a type-II band alignment forms at the interface, in which the valence and conduction bands of ZnO are concomitantly higher than those of BaTiO3. The accurate determination of VBO and CBO is important for use of semiconductor/ferroelectric heterojunction multifunctional devices.

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PZT陶瓷粉体的制备和研究。用溶胶一凝胶法制备了错钦酸铅Pb(Zr_(0.52)Ti_(0.48))O_3(PZT),研究了溶剂乙二醇单甲醚和水的比例对PZT的晶化温度和晶粒尺寸的影响,结果表明,随溶剂比例的增大,PZT粉体的晶化温度升高晶粒尺寸增大,当V(C_3H_9O_2)/V(H_2O)=4.47时,不仅缩短了溶胶-凝胶过程的时间,且得到的PZT粉体晶化温度低(443℃),晶粒的粒径分布集中(60-70nm)。PZT掺杂压电陶瓷的制备和研究。用同一主族元素对PZT进行掺杂改性实验,制备了Ca-PZT,Sr-PZT,Ba-PZT三个系列的压电陶瓷体系,其中每个体系中又包含1%、3%、5%、7%、9%(10%,11%)不同的掺杂量。经过压片,蒸镀电极,极化处理后测定其由,常数,结果表明,Ba离子的半径是最适合掺杂的离子半径。PZT和PbTIO。(PT)稳定溶胶的制备。在溶胶形成过程中,通过调整溶剂乙二醇单甲醚和水的比例,并加入适当量的乙酞丙酮作稳定剂,在有水体系下制备稳定的PZT和PT溶胶前驱体。该方法省略了制备中的蒸馏过程,简化了PZT和PT稳定溶胶的制备工艺。PZT铁电薄膜的制备。用自制的溶胶进行旋涂制膜,制备了膜层厚度不同的PZT和PT-PZT薄膜,在不同的锻烧温度,锻烧时间下处理为晶态膜,并对晶态膜进行表征,证明获得了钙钦矿结构的PZT晶态膜。

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The electronic structure of a microporous titanosilicate framework, ETS-10 is calculated by means of a first-principles self-consistent method. It is shown that without the inclusion of the alkali atoms whose positions in the framework are unknown, ETS-10 is an electron deficient system with 32 electrons per unit cell missing at the top of an otherwise semiconductor-like band structure. The calculated density of slates are resolved into partial components. It is shown that the states of the missing electrons primarily originate from the Ti-O bond. The local density of states of the Ti-3d orbitals in the ETS-10 framework is quite different from the perovskite BaTiO3. The possibilities of ETS-10 crystal being ferroelectric or having other interesting properties are discussed.

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Molecular-dynamics simulations have been carried out to investigate the electric hysteresis of barium titanate nanofilm containing oxygen vacancy ordering array parallel to the {101} crystal plane. The results obtained show a significant weakening of polarization retention from non-zero value to zero as the size of the array was reduced to a critical level, which was attributed to the formation and motion of head-to-head domain wall structure under external field loading process. By comparing with materials containing isolated oxygen vacancies, it was found that the zero retention was due to the oxygen vacancy ordering array rather than to the concentration of oxygen vacancy. Copyright (C) EPLA, 2010

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In this study the tungsten-bronze type tetragonal (Ba1-xSrx)(2)NaNb5O15 system as a kind of lead-free ferroelectric ceramics has been synthesized by low-temperature combustion method. Microstructure and dielectric properties of (Ba1-xSrx)(2)NaNb5O15 system were also investigated. X-ray diffraction (XRD) study confirms the formation of single-phase tetragonal compounds in the crystal system at room temperature. The TEM photograph shows that the particles synthesized by low-temperature combustion method are uniform with an average particle size of 30nm in diameter.

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Linear and nonlinear optical (NLO) properties of KNbO3 in various phases are calculated from their crystal structures. Nonlinear optical tensor coefficients are found to be very sensitive to the atomic geometry, changing as much as 85% between the ferroelectric tetragonal and rhombohedral phases. The predicted principal refractive indices are also found to be sensitive to their structural changes. In the tetragonal phase KNbO3 has the largest NLO responses, in the orthorhombic phase KNbO3 has the relative larger NLO coefficients, and in the rhombohedral structure KNbO3 has the large and homogeneous NLO properties. (C) 1998 Elsevier Science B.V. All rights reserved.

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A new series of chiral Schiff's bases containing 2-hydroxybenzilideneaniline moieties and their copper complexes were synthesized and studied by differential scanning calorimetry, polarized optical microscopy, X-ray diffraction and EPR measurement. The results show that most of the Schiff's bases and only two of the copper complexes exhibited chiral smectic liquid crystal phases.