Optical properties of semiconductor quantum-well material using photonic crystal fabricated by micro-fabrication machine

Two-dimensional photonic crystals in near infrared region were fabricated by using the focused ion beam ( FIB) method and the method of electron-beam lithography (EBL) combined with dry etching. Both methods can fabricate perfect crystals, the method of FIB is simple,the other is more complicated. It is shown that the material with the photonic crystal fabricated by FIB has no fluorescence,on the other hand, the small-lattice photonic crystal made by EBL combined with dry etching can enhance the extraction efficiency two folds, though the photonic crystal has some disorder. The mechanisms of the enhanced-emission and the absence of emission are also discussed.

Collective and single-particle excitations in coupled quantum wires in magnetic fields

The full spectra of magnetoplasmons and single-particle excitations are obtained of coupled one-dimensional electron gases in parallel semiconductor quantum wires with tunneling. We show the effects of the interwire Coulomb interaction and the tunneling, as well as the magnetic-field-induced localization on the elementary excitations in symmetric and asymmetric coulped quantum wire structures. The interacton and resonance between the plasmon and the intersubband single-particle excitations are found in magnetic fields.

Radiative recombination characteristics in GaAs multilayer n(+)-i interfaces

In this communication, we have carried out a detailed investigation of radiative recombination in n-GaAs homojunction far-infrared detector structures with multilayer emitter (n(+))-intrinsic (i) interfaces by temperature-dependent steady-state photoluminescence measurements. The observation of the emitter-layer luminescence structures has been identified from their luminescence characteristics, in combination with high density theoretical calculation. A photogenerated carrier transferring model has been proposed, which can well explain the dependencies of the luminescence intensities on the laser excitation intensity and temperature. Furthermore, the obtained radiative recombination behavior helps us to offer a proposal to improve the operating temperature of the detector. (C) 2001 American Institute of Physics.

Fabrication and characterization of two-dimensional photonic crystal on silicon by efficient methods

Two-dimensional photonic crystals working in near infrared region are fabricated into silicon-on-insulator wafer by 248-nm deep UV lithography. We present an efficient way to measure the photonic crystal waveguide's light transmission spectra at given polarization states.

Magnetospectroscopy of bound phonons in high purity GaAs

Far infrared magnetophotoconductivity performed on high purity GaAs reveals the existence of fine structures in the resonant magnetopolaron regions. The fine structures are attributed to the presence of bound phonons due to multiphonon processes. We demonstrate that the magnetopolaron energy spectrum consists of bound phonon branches and magnetopolaron branches. Our results also indicate that different phonons are bound to a single impurity, and that the bound phonon in Si-doped GaAs is a quasilocalized mode.

Verification of EL2 electronic absorption effect on charge transfer in semi-insulating GaAs

The electronic absorption of EL2 centers has been clarified to be related to the electron acid hole photoionizations, and the transition from its ground state to metastable state, respectively. Under an illumination with a selected photon energy in the near infrared region, these three processes with different optical cross sections will show different kinetics against the illumination time. It has recently been shown that the photosensitivity (measured under 1.25 eV illumination) of the local vibrational mode absorption induced by some deep defect centers in SI-GaAs is a consequence of the electron and hole photoionizations of EL2. This paper directly measures the kinetics of the electronic transition associated with EL2 under 1.25 eV illumination, which implies the expected charge transfer among different charge states of the EL2 center. A calculation based on a simple rate equation model is in good agreement with the experimental results.

In situ circular dichroic electrochemical study of bilirubin and bovine serum albumin complex

The electrooxidation of bilirubin (BR) and bovine serum albumin (BSA) complexes was studied by in situ circular dichroism (CD) spectroelectrochemistry. The result showed that the mechanism of the whole electrooxidation process of this complex corresponded to electrochemical processes (EE mechanism) in aqueous solution. Some parameters of the process were obtained by double logarithm method, differential method and nonlinear regression method. In visible region, CD spectra of the two enantiomeric components of the complex and their fraction distribution against applied potentials were obtained by singular value decomposition least-square (SVDLS) method. Meanwhile, the distribution of the five components of secondary structure was also obtained by the same method in far-UV region. The peak potential gotten from EE mechanism corresponds to a turning point for the component transition, beyond which the whole reaction reaches a new equilibrium. Under applied positive potentials, the enantiomeric equilibrium between M and P form is broken and M form transfers to its enantiomer of P, while the fraction of alpha-helix increases and that improves the transition to P form.

Structural electrochemical study of hemoglobin by in situ circular dichroism thin layer spectroelectrochemistry

Secondary and tertiary or quaternary structural changes in hemoglobin (HB) during an electroreduction process were studied by in situ circular dichroism (CD) spectroelectrochemistry with a long optical path thin-layer cell. By means of singular value decomposition least-squares analysis, CD spectra in the far-UV region give two similar a components with different CD intensity, indicating slight denaturation in the secondary structures due to the electric field effect. CD spectra in the Soret band show a R --> T transition of two quaternary structural components induced by electroreduction of the heme, which changes the redox states of the center ion from Fe3+ to Fe2+ and the coordination number from 6 to 5. The double logarithmic analysis shows that electroreduction of hemoglobin follows a chemical reaction with R --> T transition. Some parameters in the electrochemical process were obtained: formal potential, E-0t = -0.167 V; electrochemical kinetic overpotential, DeltaE(0) = -0.32 V; standard electrochemical reaction rate constant, k(0) = 1.79 x 10(-5) cm s(-1); product of electron transfer coefficient and electron number, alphan=0.14; and the equilibrium constant of R --> T transition, K-c = 9.0.

Isobutane/butene alkylation over supported heteropoly acid catalysts: I. Influence of the structure of silica

Catalysts consisting of heteropoly acids (HPAs) supported on different silica and mesoporous molecular sieves have been prepared by impregnation and the sol-gel method, respectively, and their catalytic behavior in fixed-bed alkylation of isobutane with butene has been investigated. The activity, selectivity and stability of the supported-HPA catalysts could be correlated with the surface acidity of the catalysts, the structure of supports as well as the time on stream (TOS). In the fixed-bed reactor, the acidity of the heteropoly acid is favorable to the formation of dimerization products (C-8(=)); especially, the pore size of supports was seen to have an important effect on activity and product distribution of the catalysts. Contrary to the traditional solid-acid catalysts, the supported-HPA catalysts own an excellent stability for alkylation, which makes it possible for these supported catalysts to replace the liquid-acid catalysts used in industry.

Ultraviolet-infrared femtosecond laser-induced damage in fused silica and CaF2 crystals

The damage in fused silica and CaF2 crystals induced by wavelength tunable femtosecond lasers is studied. The threshold fluence is observed to increase rapidly with laser wavelength lambda in the region of 250-800 nm, while it is nearly a constant for 800

Infrared luminescence properties of bismuth-doped barium silicate glasses

Infrared (IR) luminescence covering 1.1 to similar to 1.6 mu m wavelength region was observed from bismuth-doped barium silicate glasses, excited by a laser diode at 808 nm wavelength region, at room temperature. The peak of the IR luminescence appears at 1325 nm. A full width half-maximum (FWHM) and the lifetime of the fluorescence is more than 200 nm and 400 mu s, respectively. The fluorescence intensity increases with Al2O3 content, but decreases with BaO content. We suggest that the IR luminescence should be ascribed to the low valence state of bismuth Bi2+ or Bi+, and Al3+ ions play an indirect dispersing role for the infrared luminescent centers.

Fluorescent Ag nanoclusters in glass induced by an infrared femtosecond laser

We report a method for the selective introduction of fluorescent Ag nanoclusters in glass. Extinction and photoluminescence spectra show that a fraction of the Ag atoms are generated through femtosecond laser induced multiphoton reduction and then aggregate to form Ag nanoclusters after heat treatment. Red luminescence from the irradiated region is observed under blue or green laser excitation. The fluorescence can be attributed to interband transitions within Ag nanoclusters. This method provides a novel route to fabricate fluorescent nanomaterials in 3D transparent materials. (c) 2007 Elsevier B.V. All rights reserved.

Ultrabroadband infrared luminescence and optical amplification in bismuth-doped germanosilicate glass

This letter reports the ultrabroadband infrared luminescence from 1000- to 1700-nm wavelength range and demonstrate optical amplification at the second optical communication window in a novel bismuth-doped germanosilicate glass. The full-width at half-maximum of the luminescence is about 300 mn and the optical gain is larger than 1.37 within the wavelength region from 1272 to 1348 nm with pump power 0.97 W. This material could be useful to fabricate ultrabroadband optical fiber amplifiers.

Ultrabroad infrared luminescences from Bi-doped alkaline earth metal germanate glasses

We report on ultrabroad infrared (IR) luminescences covering the 1000-1700-nm wavelength region, from Bi-doped 75GeO(2) 20RO-5Al(2)O(3) 1B(2)O(3) (R = Sr, Ca, and Mg) glasses. The full width at half-maximum of the IR luminescences excited at 980 nm increases (315 -> 440 -> 510 nm) with the change of alkaline earth metal (Mg2+ -> Ca2+ -> Sr2+). The fluorescence lifetime of the glass samples is 1725, 157, and 264 mu s when R is Sr, Ca, and Mg, respectively. These materials may be promising candidates for broad-band fiber amplifiers and tunable laser resources.