235 resultados para Escória de aciaria LD


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We report what we believe to be the first demonstration of laser operation with a novel laser material of Yb3(+) -doped Gd-2 SiO2 (Yb: GSO) pumped by a laser diode at 940 nm. We obtained a low lasing threshold of 1.27 kW/cm(2) with the center wavelength of 1090 nm, which is lower than the value of 1.53 kW/cm(2) predicted for Yb: YAG. The maximal output power of 360 mW was obtained with a 2% output, which corresponds to a slope efficiency up to 19%.

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Yb^3+激光材料在900~980nm范围具有较强的吸收,能与高效的InGaAs激光二极管(波长为9001100nm)有效地耦合,且能级简单,抽运波长与振荡波长相近,量子效率高。这些优点十分有利于在1000nm附近实现超快高功率激光输出。而随着高性能InGaAs激光二极管的发展和成本的降低,近年来,掺Yb^3+激光介质的研究受到人们的极大关注,并研制出了许多新型激光晶体,如Yb:YAG,Yb:KYW,Yb:GdVO4,Yb:SYS,Yb:YAB,

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一种叠层LD光纤光导椎泵浦光纤激光器的制作方法,其特征在于,包括如下步骤:步骤1:采用光学微加工工艺在石英或特种玻璃材料上加工制作光导椎,该光导椎为条状的六面体,其纵向一端的断面为斜向,且制作有光纤凹槽,纵向另一端的断面为bar条面;步骤2:在光导椎的光纤凹槽上依次并排固接有多个包层光纤;步骤3:在最外侧的包层光纤的外侧粘接一铜片;步骤4:在铜片上镀高反射率金膜;步骤5:将条状六面体的光导椎除光纤凹槽和bar条面外,其余四面全部镀高反射率金膜。

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We report a LD side-pumped fundamental-mode (Mx(2) = 1.35 and My(2) = 1.27) passive Q-switched and mode-locked Nd:YAG laser based on a semiconductor saturable absorber mirror (SESAM). At a pump current of 12.5 A, the average output power of 5.68 W with 80 kHz repetition rate and 2 mu s pulse width of the Q-switched envelope was generated. The repetition rate of the mode-locked pulse within the Q-switched envelope of 88 MHz was achieved.

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This paper reports on the design, fabrication, and performance of an integrated electro-absorptive modulated laser based on butt-joint configuration for 10Gbit/s application. This paper mainly aims at two aspects. One is to improve the optical coupling between the laser and modulator; another is to increase the bandwidth of such devices by reducing the capacitance parameter of the modulator. The integrated devices exhibit high static and dynamic characteristics. Typical threshold current is 15mA,with some value as low as 8mA. Output power at 100mA is more than 10mW. The extinction characteristics,modulation bandwidth, and electrical return loss are measured. 3dB bandwidth more than 10GHz is monitored.

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介绍了抽运腔在半导体侧面抽运固体激光头中的应用.运用光线追迹的方法,从理论上分析了抽运腔对抽运光在晶体中的吸收效率和相对强度分布的影响,然后对无抽运腔、有抽运腔、抽运腔内表面经过镀金处理、抽运腔内表面经过抛光和镀金处理四种情况进行了实验研究.从理论模拟和实验结果中可以看出,抽运腔及其内表面的处理质量对激光头输入输出性能有很大的影响.

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介绍了一种二极管侧面泵浦激光头的新结构,用Nd:YAG晶体作为工作物质,将此结构下激光头的输入输出性能与传统结构下的输入输出性能进行了比较。此外利用这种新结构,对一种新型晶体Nd:GdVO4进行了实验,获得了连续1064nm的激光输出42.6W,最大光光效率为23.7%。

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介绍了一种二极管侧面泵浦的Nd:YAG连续激光器,采用了简单、实用的侧面泵浦结构,获得37.9W的连续1064 nm的激光多模输出;斜效率为31.5%,光效率为23.7%。文中还对该泵浦头的热透镜效应作了测试。

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We report on an 880 nm LD pumped passive mode-locked TEM00 Nd:YVO4 laser based on a semiconductor saturable absorber mirror (SESAM) for the first time. When the incident pump power was 16 W, 4.76 W average output power of continuous-wave mode-locked laser with an optical-to-optical conversion efficiency of 30% was achieved. The repetition rate of mode-locked pulse was 80 MHz with 25 ps pulse width. The maximum pulse energy and peak power were 60 nJ and 2.4 kW, respectively.

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We report an LD side-pumped continuous-wave passive mode-locked Nd:YAG laser with a Z-type folded cavity based on a semiconductor saturable absorber mirror (SESAM). The average output power 2.95 W of mode-locked laser with electro-optical conversion efficiency of 1.3% and high beam quality (M-x(2) = 1.25 and M-y(2) = 1.22) is achieved. The repetition rate of mode-locked pulse of 88 MHz with pulse energy of 34 nJ is obtained.

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In this paper the finite element method was used to simulate micro-scale indentation process. The several standard indenters were simulated with 3D finite element model. The emphasis of this paper was the differences between 2D axisymmetric cone model and