Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE

A 275 mu m thick GaN layer was directly grown on the SiO2-prepatterned sapphire in a home-built vertical hydride vapour phase epitaxy (HVPE) reactor. The variation of optical and structure characteristics were microscopically identified using spatially resolved cathodeluminescence and micro-Raman spectroscopy in a cross section of the thick film. The D X-0(A) line with the FWHM of 5.1 meV and etch- pit density of 9 x 10(6) cm(-2) illustrated high crystalline quality of the thick GaN epitaxial layer. Optically active regions appeared above the SiO2 masks and disappeared abruptly due to the tapered inversion domains at 210 - 230 mu m thickness. The crystalline quality was improved by increasing the thickness of the GaN/sapphire interface, but the region with a distance of 2 mu m from the top surface revealed relatively low quality due to degenerate surface reconstruction by residual gas reaction. The x-ray rocking curve for the symmetric (0 0 2) and asymmetric (1 0 2) reflections also showed good quality and a small wing tilt of the epitaxial lateral overgrowth (ELO) GaN.

Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth

The crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth (ELO) on sapphire (0001) substrates was investigated by using double crystal X-ray diffraction (DC-XRD). It was found that ELO GaN stripes bent towards the SiNx mask in the direction perpendicular to seeding lines. Each side of GaN (0002) peak in DC-XRD rocking curves was a broad peak related with the crystallographic tilt. This broad peak split into two peaks (denoted as A and B), and peak B disappeared gradually when the mask began to be removed by selective etching. Only narrow peak A remained when the SiNx mask was removed completely. A model based on these results has been developed to show that there are two factors responsible for the crystallographic tilt: One is the non-uniformity elastic deformation caused by the interphase force between the ELO GaN layer and the SiNx mask. The other is the plastic deformation, which is attributed to the change of the threading dislocations (TDs)-from vertical in the window regions to the lateral in the regions over the mask.

Effects of annealing on properties of spin-valve pinned with FeMn alloy

The magnetic properties of spin-valve pinned by FeMn layer were investigated after it was annealed at different temperatures. Its property was dependent on the vacuum annealing temperature. The pinning field could be increased through annealing at a temporature lower than 200degreesC;the pinning field would reduce and other properties be deteriorated as the annealing temperature was higher than 200degreesC; the pinning effect lost and giantmagnetic resistance disappeared at 300degreesC. Based on the results of AES analysis it was concluded that the diffusion in spin-valve multilayer was along grain boundary.

Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence

Positron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314 ps positron lifetime component was attributed to Ga vacancy (V-Ga) related defect. Isochronal annealing studies showed at 300 degreesC annealing, the 314 ps positron lifetime component and the two observed PL signals (777 and 797 meV) disappeared, which gave clear and strong evidence for their correlation. However, the hole concentration (similar to2x10(17) cm(-3)) was observed to be independent of the annealing temperature. Although the residual acceptor is generally related to the V-Ga defect, at least for cases with annealing temperatures above 300 degreesC, V-Ga is not the acceptor responsible for the p-type conduction. (C) 2002 American Institute of Physics.

(Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam depositionw

The (Ga,Mn,As) compounds were obtained by the implantation of Mn ions into semi-insulating GaAs substrate with mass-analyzed low energy dual ion beam deposition technique. Auger electron spectroscopy depth profile of a typical sample grown at the substrate temperature of 250degreesC showed that the Mn ions were successfully implanted into GaAs substrate with the implantation depth of 160 nm. X-ray diffraction was employed for the structural analyses of all samples. The experimental results were greatly affected by the substrate temperature. Ga5.2Mn was obtained in the sample grown at the substrate temperature of 250degreesC. Ga5.2Mn, Ga5Mn8 and Mn3Ga were obtained in the sample grown at the substrate temperature of 400degreesC. However, there is no new phase in the sample grown at the substrate temperature of 200degreesC. The sample grown at 400degreesC was annealed at 840degreesC. In this annealed sample Mn3Ga disappeared, Ga5Mn8 tended to disappear,Ga5.2Mn crystallized better and a new phase of Mn2As was generated. (C) 2002 Elsevier Science B,V. All rights reserved.

Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice

Postgrowth rapid thermal annealing was used to study the relaxation mechanism and optical properties of InGaAs/GaAs self-assembled quantum dots superlattice grown by molecular beam epitaxy. It is found that a significant narrowing of the luminescence linewidth (from 80 to 42 meV) occurs together with about 86 meV blue shift at annealing temperature up to 950 degrees C. Double crystal X-ray diffraction measurements show that the intensity of the satellite diffraction peak, which corresponds to the quantum dots superlattice, decreased with the increasing annealing temperature and disappeared at 750 degrees C, but recovered and increased again at higher annealing temperatures. This behavior can be explained by two competing relaxation mechanisms; interdiffusion and favored migration. The study indicates that a suitable annealing treatment can improve the structural properties of the quantum dots superlattice. (C) 2000 Elsevier Science B.V. All rights reserved.

A transmission electron microscopy study of microstructural defects in proton implanted silicon

The microstructure of silicon on defect layer, a new type of silicon-on-insulator material using proton implantation and two-step annealing to obtain a high resistivity buried layer beneath the silicon surface, has been investigated by transmission electron microscopy. Implantation induced a heavily damaged region containing two types of extended defects involving hydrogen: {001} platelets and {111} platelets. During the first step annealing, gas bubbles and {111} precipitates formed. After the second step annealing, {111} precipitates disappeared, while the bubble microstructure still remained and a buried layer consisting of bubbles and dislocations between the bubbles was left. This study shows that the dislocations pinning the bubbles plays an important role in stabilizing the bubbles and in the formation of the defect insulating layer. (C) 1996 American Institute of Physics.

Structural and Optical Performance of GaN Thick Film Grown by HVPE

Thick GaN films were grown on GaN/sapphire template in a vertical HVPE reactor. Various material characterization techniques,including AFM, SEM, XRD, RBS/Channeling, CL, PL, and XPS, were used to characterize these GaN epitaxial films. It was found that stepped/terraced structures appeared on the film surface,which were indicative of a nearly step-flow mode of growth for the HVPE GaN despite the high growth rate. A few hexagonal pits appeared on the surface, which have strong light emission. After being etched in molten KOH, the wavy steps disappeared and hexagonal pits with {1010} facets appeared on the surface. An EPD of only 8 ×10~6cm~(-2) shows that the GaN film has few dislocations. Both XRD and RBS channeling indicate the high quality of the GaN thick films. Sharp band-edge emission with a full width at half maximum（FWHM）of 67meV was observed, while the yellow and infrared emissions were also found. These emissions are likely caused by native defects and C and O impurities.

旅游相关活动对九寨沟核心景区植物多样性与结构的影响

日益增强的旅游活动干扰正成为九寨沟世界自然遗产的有效保护与持续管理不可回避的挑战，已成为当前区域生态保护与经济发展的焦点问题之一。阐明相关旅游的干扰活动对核心景区植物物种组成、多样性与结构的影响是九寨沟有效保护与持续管理的必要前提和基础，然而至今少有研究。选择九寨沟与旅游活动相关的九个景点、公路建设地段以及退耕地还林地，详细调查了林下植被结构、物种组成与多样性，比较了相关旅游活动干扰与基本未受干扰地段的差异。目的是阐明九寨沟核心景区旅游干扰条件下植物多样性与群落结构及其特点，揭示旅游干扰与植被结构和生物多样的相互关系，评估九寨沟旅游管理的有效性，探索减免旅游干扰影响的对策与措施。初步结论如下。 1.旅游活动引起九寨沟核心景区植物组成和群落结构特征改变显著。栈道及公路附近许多耐荫喜湿的敏感种局部消失，而早熟禾、车前草、委陵菜等耐干旱、耐践踏、繁殖能力强的植物种群扩大；外来物种频繁出现并已少量侵入干扰相对较轻的林分深处；林下群落以草本植物为优势，灌木与苔藓植物的频度、盖度、高度以及灌木密度均有所下降。可见，大量的游人活动和景区公路建设已对九寨沟丰富的乡土植物构成极大威胁，导致其生物多样性降低。而九寨沟农耕地退耕有利于九寨沟生态环境和生物多样性保护，正逐步向稳定群落演替。 2．干扰强度的差异导致九寨沟植物所受影响的程度不同。栈道附近植物受影响的程度与游人活动频率有关，活动频率高的地段干扰强度大，对植物的影响程度重，反之植物所受的影响较轻。强度干扰地段，耐荫喜湿的物种少见，伴生植物优势地位突出，生物多样性明显降低，植物群落结构特征改变也极为显著；干扰较轻的地段，伴生物种少量出现，植物群落结构变化不明显，生物多样性略为降低，部分地区结构参数值和多样性指数有所升高。公路修建是一种强度干扰，它导致附近植物种类极为单一，草本优势种异常突出，多数植物生活力低下、生长更新能力差。 3.不同植物类群受干扰影响的程度不同。草本及苔藓植物的种类组成和多样性指数受干扰影响较大，灌木和苔藓植物的结构受干扰影响较大，苔藓植物对干扰影响最为敏感。 综合分析表明，九寨沟核心景区的管理虽然比较规范，但目前核心区热点景点段的管理仍然不够，旅游活动驱动了林下植被退化明显、物种组成显著变化、生物多样性衰退、非乡土喜光耐旱种群扩大。导致九寨沟核心区旅游活动与生物多样性保护目标尖锐冲突，进一步约束旅游活动带来的干扰，强化管理，开展林下植被恢复与非乡土喜光耐旱种群调控是九寨沟自然遗产地保护一项紧迫任务。 The increasing tourism disturbance is an unavoidable challenge to effective conservation and sustained tourist management of Jiuzhaigou Nature Reserve. It has become one of the focal problems of regional ecological protect and economic development. It is important to clarify effects of tourism disturbance on plant species composition, diversity and community structure in kernel spot for effective conservation and sustained tourist management in Jiuzhaigou, China. However, there were little studies about this yet. The study investigated the vegetation structure, species composition and diversity at nine sight spot, road area and four abandoned farmlands connecting with tourism, and compared the differences between disturbed area and undisturbed area. The purpose of the this study is clarifying the plant diversity and community structure and characteristics of the disturbed area in kernel spot of Jiuzhaigou, discovering the relation between vegetation structure and biodiversity, evaluating the effect of tourist management and exploring the measure decreasing tourist disturbance. Our results are following: 1. Tourism disturbance caused a significant change in species composition and structure of plant communities in kernel Spot of Jiuzhaigou. In the vicinity of plank and road, some native shade-tolerant or hygrophilous plants had disappeared, accompanying with the population expansion of some xerophilous and disturbance-resisting species such as Poa sp. Plantago depressa, Potentiila multicaulis and some exotic and synanthropic species. Herbs were domaint species, while frequency coverage and height of shrubs and bryophytes, and shrub density decreased. In indicated that tourist activities and build of road had adversely affected on native plant species, and led to decline in biodiversity of Jiuzhaigou Nature Reserve. Abandoned farmlands maybe conduced to entironment and biodiversity conservation. 2. Nearby the plank, influency variable of tourism disturbance on plant was alosely and positively correlated with disturbance intensity. There was companion plant species and lacked shape-loving species in heavy disturbed areas, which caused decrease in biodiversity and significant change in community structure in these places. On the contrary, in the slightly disturbed areas, some companion speices displayed and biodiversity decreased slightly, but no significant change in community structure in these areas. The biuld of road is a heavy disturbance form, which led to increase of herb species and to decrease in vitality and regeneration capacity. 3. The intensity of tourism disturbance on plant depended on plant groups. Tourism interference significantly influenced species composition and diversity index of herb and bryophyte; it also significantly influenced community structure; the bryophyte was more sensitive to tourism disturbance. Our result indicated that the management in kernel spot of Jiuzhaigou is relatively reasonable, but not adequate. Tourism speed the degradation of the vegetation under woodland, the change of the species composition, the decreaing of the biodiversity and the expanding of the exotic sunloving plant populations. The contradiction between tourism and conserving biodiversity is increasing, so enforcing management, regenerating the vegetation under woodland and adjusting the exotic sunloving arid-tolerent plant populations is a pressing work to protect the Jiuzhaigou natural legacy.

牦牛粪便对青藏高原东部高寒草甸土壤养分系统的影响

川西北高寒草甸位于青藏高原东部地区，是我国四大牧区之一，也是长江和黄河等江河源区的重要水源涵养功能区。近几十年来，大量牦牛粪便被牧民作为生物能源、肥料或者食用菌产业的原料而利用，为草原生态系统的养分平衡增加了生态风险。鉴于在青藏高原地区针对牦牛粪便的相关研究尚未见报道，本文从粪便和土壤养分相互变化趋势的角度出发，研究了粪便在夏秋两季的分解状况和粪便其下及其周围土壤的养分变化。通过此研究，将有助于了解牦牛粪便在自然状态下的分解速率以及粪便对土壤养分及土壤微生物生物量的影响，为粪便对草地土壤生态系统的贡献提供概念性认识，同时也为高寒草甸草地这种脆弱生态系统的可持续管理提供理论依据。 针对牦牛粪便自身养分释放及其对土壤在时间和空间尺度上的影响，本文通过模拟牛粪堆积，在不同时间和固定区域内对牛粪和土壤进行了夏秋两季的采样测定，分析了牛粪及土壤NO3--N、NH4+-N、速效K、无机P、有机C、全N 和全P 含量随时间的变化趋势。得到如下结果： 1. 在研究区域内，牛粪对草地生态系统具有较强的养分（N、P）贡献能力。据初步统计，其估值大致为氮素699~932 kg ha-1，P 素为110~147 kg ha-1。牛粪（湿重、干重）在夏秋季节的分解速率具有较大差异，夏季显著快于秋季。夏季牛粪湿重、干重在2 个月左右之后分别降为初期的14%和24%，而秋季同期分别降为35%和52%。牛粪养分（NO3--N、NH4+-N、速效K、无机P、有机C、全N 和全P）的分解速率在夏季也要显著快于秋季。秋季经过2 个月左右的分解之后，牛粪以上含量分别降至初始态的32%、60%、36%、64%、58%、63%和43%，远高于夏季的同期水平。 2. 在不同季节，牛粪周围的土壤养分（NO3--N、NH4+-N、速效K 和无机P）含量变化随时间改变呈现相同的趋势。但是，牛粪周围不同远近下土壤养分随时间的动态变化幅度略有不同。粪下土壤养分含量随时间变化波动较大，距粪便越远，随时间变化的变幅越为平缓。总体来说，在夏季由于粪便分解较快，对土壤养分的持续作用时间不及秋季，秋季粪便分解变慢，表现出养分的缓释特征。其次，牛粪对粪下土壤影响的持续时间也长于对周围土壤的作用时间。 3. 粪便对土壤养分（NO3--N、NH4+-N、速效K、无机P）影响的范围在不同季节具有差异。夏季要高于秋季，但对周围土壤养分影响的持续时间低于秋季。在夏季短期内，牛粪对土壤NO3--N 和速效K 含量的影响范围能够超过30cm，而对NH4+-N 和无机P 的影响范围则介于10cm 和30cm 之间。在2 个月左右之后，牛粪对周围土壤养分的影响能力基本消失。在秋季，牛粪对周围土壤养分影响范围难以达到30cm 处。粪便在夏季对其下土壤和周围土壤的有机C、全N 和全P 含量并无显著影响，但在秋季能显著增加其下土壤有机C、全N 和全P 含量。 4. 牛粪在秋季对土壤SMB-C、SMB-N 和SMB-P 含量的影响能够持续2 个月以上，由于秋冬季节牛粪分解缓慢，因此推断这种效应持续时间至少能够1 年左右。另一方面，牛粪在秋季对土壤SMB-C、SMB-N 和SMB-P 含量的影响范围主要集中在其下土壤，而周围的影响效应并不明显。 The grassland on the eastern fringe of Qinghai-Tibetan Plateau was one of the four greatest pasture zones in our country and the main water conservation function zones in the hesastream of Yangtse River and Huanghe river. Rencent years, lots of dung in this area was used as biological energy, fertilizer or material of fungoid growing, leading to high risk of nutrient banlance in grassland ecosystem. In view of the researches on the impact of yak dung in this area are relatively rare, the present study focused on the relationship of dung and soil nutrient transformation in sunmer and autumn, which could profoundly illuminate the mechanism of dung decomposition and the effect of dung on soil chemical properties and soil microbe biomass. The present study also contributed to a basic understand and provided scientific management in the high-frigid ecosystem. Decomposition of yak dung and its effect on soil chemical properties in eastern grassland of Qinghai-Tibetan Plateau were determined. The study simulated the real dung pats, took dung and soil samples at different time and fixed-point in summer and autumn. The samples were analysed for NO3--N, NH4+-N, available K, inorganic P, total organic C (TOC), total N (TN), total P (TP). It was concluded that: 1. In study area, the yak dung supplied to ecosystem substantial nutrient. It is estimated that the N contribution of dung was approximately 699~932 kg ha-1, P contribution was approximately 110~147 kg ha-1. The rate of yak decomposition was more rapid in summer than autumn, the wet and dry weight of yak decreased to 14% and 24% respectively after 2 months when dung excreted in summer, with 35% and 52% in autumn. The content of NO3--N、NH4+-N、available K、inorganic P、TOC、TN and TP in dung decomposed more rapid in summer too. After 2 months when dung excreted in autumn, the content of above nutrient decreased to 32%、60%、36%、64%、58%、63% and 43% respectively，which were significantly higher than summer. 2. The content of NO3--N、NH4+-N、available K and inorganic P in soil around dung had the same transformation trend in each season, whereas it was distinguishing at different gradient of distance from dung, the nutrient in soil below dung had the most significant change while the more far from dung, the less change in soil. It was concluded that the yak dung had prolong impacts on soil in autumn compared with summer, besides, it aslo showed that the yak dung had protract effect on soil below dung compared with soil around dung. 3. The yak dung had expansive impact on soil around dung in summer whereas had relatively short effect compared with autumn. In short-term at summer, there was a significant increase about the content of NO3--N and available K around 30cm radius from dung pat while the content of NH4+-N and inorganic P between 10cm to 30cm. After 2 months, the impact almost disappeared. In autumn, the effect was hard to reach 30cm. The yak dung had no significant effects on the content of TOC、TN and TP in soil below or around dung in summer whereas there was a obvious increase in soil below dung pat in autumn. 4. The duration of effect of yak dung on soil microbial biomass(SMB) C、N and P was at least 2 months, maybe even more than 1 year. On the other hand, the impact of dung on SMB-C、SMB-N and SMB-P mainly acted on soil below dung while no obious effect on soil around dung.

The annealing behavior of Cu nanoparticles in Ar-ion implanted spinel

Magnesium aluminate spinel crystals (MgAl2O4 (1 1 0)) deposited with 30 nm Cu film on surface were implanted with 110 key Ar-ions to a fluence of 1.0 x 10(17) ions/cm(2) at 350 degrees C, and then annealed in vacuum condition at the temperature of 500, 600, 700, 800 and 900 degrees C for 1 h, respectively. Ultraviolet-visible spectrometry (UV-VIS), scanning electron microscopy (SEM), Rutherford backscattering (RBS) and transmission electron microscopy (TEM) were adopted to analyze the specimens. After implantation, the appearance of surface plasmon resonance (SPR) absorbance peak in the UV-VIS spectrum indicated the formation of Cu nanoparticles, and the TEM results for 500 degrees C also confirmed the formation of Cu nanoparticles at near-surface region. In annealing process, The SPR absorbance intensity increased at 500 and 700 degrees C, decreased with a blue shift of the peak position at 600 and 800 degrees C, and the peak disappeared at 900 degrees C. The SPR absorbance intensity evolution with temperature was discussed combined with other measurement results (RBS, SEM and TEM). (C) 2010 Elsevier B.V. All rights reserved.

Control of cocklebur seed germination by nitrogenous compounds : Nitrite, nitrate, hydroxylamine, thiourea, azide and cyanide

Germination of non-dormant upper cocklebur (Xanthium pinsylvanicum Wallr.) seeds was stimulated by not only CS(NH2)2 but also NH2OH, KCN and NaN3. This stimulation was not via the enhancement of aerobic C2H4 production. NH2OH, KCN and NaN3 in certain concentrations promoted the initial growth of axial and/or cotyledonary parts, but the degree of growth promotion by NH2OH, NaN3 and KCN was slight compared with that by CS(NH2)2. As in the case of CS(NH2)2, however, the germinationstimulating effect of NH2OH disappeared rapidly as the preceding imbibition period was prolonged. In contrast, KCN and NaN3 were still effective in stimulating the germination of aged seeds maintained on a water substratum, as previously seen with anaerobiosis. Anaerobic induction was enhanced not only by NaN3 and KCN but also by NH2OH, KNO3, KNO2 CO(NH2)2 and CS(NH2)2 applied during the anaerobic treatment, but without causing an increase in anaerobic production of C2H4. Furthermore, KCN and NaN3, given prior to the anaerobic treatment acted additively with anaerobic induction. The germination-stimulating actions of nitrogenous compounds are discussed in comparison with those of C2H4 and anaerobiosis.

生态恢复后的千烟洲植物群落种类组成及结构特征

Qianyanzhou(QYZ) Ecological Station established in 1983 with an area of 204 hm~2 is affiliated to the Chinese Ecosystem Research Network.Before 1982,herbs had been dominant,sparsely dotted with shrubs.After 20-year restoration of the vegetation,the vegetation showed significant changes in both forest coverage and species diversity.Forest coverage had increased to 93.3% in 1999 from 0.4% in 1982.The vegetation could be broadly classified into two groups: artificial forest,accounting for the most percent,and natural secondary forest.These two groups could be subdivided into 12 types.Based on the 2003 field work,The authors studied plant community composition and vertical structure.The results were as follows: 1) On the study plots were there about 150 species,of which 100,49,and 47 grew in arbor layer and shrub layer and herb layer,respectively.Of 12 community types,the amount of species in shrub layer was larger than that of other two layers.As to the species richness in the different community types,Liquidambar formosana community showed the highest and Imperata cylindrical var.major community the least.The amount of species in arbor layer of artificial forest was smaller than those of natural Pinus massoniana forest,but no difference in understory.2) Loropetalum chinense,Quercus fabric and Vaccinium bracteatum were dominant shrub species with a wide distribution.Three ferns Woodwardia japonica、Dryopteris atrata and Dicrannepteris dichotoma were dominant herb species.Lianas were sparse,but Milletlia reticulata were found in all forest types.3) Up to now some natural regeneration species,such as Eurya muricata、Quercus fabri、Vaccinium bracteatum、Rhus chinensis、Adinandra bockiana,had grown in the arbor layer of artificial forests.Some herb species,such as Arundinella setosa、Miscanthus floridulus、Isachne globosa、Scirpus triqueter,which were dominant ones in the herb layer before the restoration of vegetation,disappeared now.4) The vertical structure of natural Pinus massoniana community and Liquidambar formosana community showed more complex comparing with artificial forests.For the artificial forests,the conifer and broad-leaves mixed forest had a more complex structure.In both natural Pinus(massoniana) community and Liquidambar formosana community,it was dominated by individuals with height of 3～4 m,while 10～12 m in the artificial forests.

Effect of acetylation on the properties of corn starch

Acetylated corn starches with different degrees of substitution (DS 0.85, DS 1.78, DS 2.89) were synthesized by the reaction of corn starch with acetic anhydride in the presence of acetic acid under varying reaction temperatures. The product was characterized by FTIR spectroscopy, H-1 NMR, X-ray diffraction and contact angle measurement. Acid-base titration and H-1 NMR methods were employed to determine the degree of substitution of product. FTIR spectroscopic analysis showed that the characteristic absorption intensities of esterified starch increased with increase in the degree of substitution, and the characterized peak of hydroxyl group almost disappeared in the spectrum of DS 2.89 acetylated starch. The detailed chemical microstructure of native starch and acetylated starch was confirmed by H-1 NMR, C-13 NMR and C-13-(1) H-1 COSY spectra.

Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum

Negative differential resistance (NDR) and memory phenomenon have been realized in current-voltage (I-V) characteristics of indium tin oxide/tris(8-hydroxyquinoline) aluminum/aluminum devices. The I-V curves have been divided into three operational regions that are associated with different working regimes of the devices: (i) bistable region, (ii) NDR region, and (iii) monotonic region. The bistable region disappeared after a couple of voltage sweeps from zero to a positive voltage. The bistable nature can be reinstated by applying a suitable negative voltage.