INFLUENCE OF THE 90-DEGREES PARTIAL DISLOCATION CORE STRUCTURE IN SILICON ON ENERGY-LEVELS

An LCAO-scheme taking into account 10 atomic orbitals (s-, p-, and d-type) is used to calculate the electronic structure of the reconstructed 90-degrees partial dislocation in Si. Two different valence force fields producing deviating results are used for modelling the core structure. Geometrical data published by another group is also used. The aim is to explore the influence of geometry on energy levels. We find that the band structure depends sensitively on bond angles. Using data determined by the Tersoff potential we obtain two bands of which the upper one penetrates deeply into the indirect band gap while the geometry minimizing the simple Keating potential leaves the gap completely clear of dislocation states. Thus, from a theoretical point of view, the chief difficulty in calculating the electronic structure of the reconstructed 90-degrees partial is the lack of accurate structural information.

ENERGY-LEVEL CALCULATIONS OF THE RECONSTRUCTED 90-DEGREES PARTIAL DISLOCATION IN SILICON

An LCAO scheme taking into account 10 atomic orbitals (s-, p-, and d-type) applied to a supercell containing 256 atoms is used to calculate the bound states of the reconstructed 90-degrees partial dislocation in Si. The results differ significantly from our earlier calculations on the unreconstructed 90-degrees partial using the same method. We find two bands separate from each other in the entire Brillouin zone and the upper band penetrates deep into the indirect band gap which is in contradiction with the general opinion that core reconstruction clears the band gap of dislocation states.

ELECTRON-STATES OF A VACANCY IN THE CORE OF THE 90-DEGREES PARTIAL DISLOCATION IN SILICON

An LCAO scheme (linear combination of atomic orbitals) taking into account ten atomic orbitals (s-, p-, and d-type) is used to calculate the electronic structure of a vacancy present in the core of the reconstructed 90 degrees partial dislocation in silicon. The levels in the band gap are extracted using Lanczos' algorithm and a continued fraction representation of the local density of states. The three-fold degenerate stale of the ideal vacancy is split into three levels with energies 0.26, 1.1, and 1.9 eV measured from the valence band edge.

Precipitates formed in a Mg-7Y-4Gd-0.5Zn-0.4Zr alloy during isothermal ageing at 250 degrees C

The ageing behavior of an extruded Mg-7Y-4Gd-0.5Zn-0.4Zr alloy during ageing at 250 degrees C has been investigated. Two types of phases have been observed during the ageing process. One is a lamellar phase with a 14H long periodic stacking structure, the other is the beta' phase with an ellipsoidal morphology. The increased mechanical properties of the peak-aged alloy are mainly ascribed to the presence of both of these phases at peak hardness.

VISCOSITY AND FLOW PROPERTIES OF CONCENTRATED-SOLUTIONS OF CHITOSAN WITH DIFFERENT DEGREES OF DEACETYLATION

The effects of the degree of deacetylation (DD) on the viscosity and flow behaviour of concentrated solutions of chitosan were investigated using 0.2 M CH3COOH and 0.2 M CH3COOH/0.1 M CH3COONa aqueous solutions as solvents. The results indicated that the